CLX32 HiRel X-Band GaAs Power-MESFET * HiRel Discrete and Microwave Semiconductor * For professional power amplifiers * For frequencies from 500 MHz to 12.5 GHz * Hermetically sealed microwave power package * Low thermal resistance for high voltage application * Power added efficiency > 54 % * Component Under Development, Package Modifications Foreseen ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLX32-00 (ql) Marking - Ordering Code see below Pin Configuration 1 2 3 G S D Package MWP-25 tbc. CLX32-05 (ql) CLX32-10 (ql) CLX32-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: on request H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: on request (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLX32 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 11 V Drain-gate voltage VDG 13 V Gate-source voltage VGS -6 V Drain current ID 1400 mA Gate forward current IG 10 mA Compression Level 1) Operation Range 1 PC 1.5 at VDS 8 V dB 2.5 at VDS 7 V 3.5 at VDS 6 V Compression Level 2) Operation Range 2 PC 3.5 at VDS 6 V dB Compression Level 3) Operation Range 3 PC tbd. dB Junction temperature TJ 175 C Storage temperature range Tstg - 65...+ 175 C Total power dissipation 4) Ptot 5.4 W Tsol 230 C Rth JS 25 K/W Soldering temperature 5) Thermal Resistance Junction-soldering point Notes.: 1) Operation Range 1: 270 mA ID 540 mA 2) Operation Range 2: ID > 540 mA 3) Operation Range 3: ID < 270 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September 99 CLX32 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. IDss 600 1000 1400 mA -VGth 1.2 2.2 3.2 V IDp3 - - 200 A -IGp3 - - 80 A IDp9.5 - - 2000 A -IGp9.5 - - 800 A gm 440 520 - mS Rth JS - 20 - K/W DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 40 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 400 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 400 mA, Ts = +25C Semiconductor Group 3 of 10 Draft D, September 99 CLX32 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Linear power gain 1) dB Glp VDS = 8 V, ID = 400 mA, f = 2.3 GHz, Pin = 8 dBm CLX32-00 15.0 16.0 - CLX32-05 15.5 16.5 - CLX32-10 15.5 16.5 - Power output at 1dB gain compr. 1) P1dB dBm VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz CLX32-00 - 31.5 - CLX32-05 - 32.3 - CLX32-10 - 32.8 - Output Power 1) dBm Pout VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz, Pin = 18.0 dBm CLX32-00 31.0 31.5 - CLX32-05 32.0 32.3 - CLX32-10 32.5 32.8 - Power added efficiency 1), 2) PAE % VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz, Pin = 18.0 dBm CLX32-00 43 48 - CLX32-05 46 52 - CLX32-10 48 54 - Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC Semiconductor Group 4 of 10 Draft D, September 99 CLX32 Typical Common Source S-Parameters V DS = 3 V, I D = 400 mA, Z o = 50 f |S11| 32.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.infineon.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: Fax.: ++89 234 24480 ++89 234 28438 e-mail: Address: martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 8 of 10 Draft D, September 99 CLX32 MWP-25 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. 1 2 3 Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 10 Draft D, September 99