BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Small feedback capacitance D Low noise figure D High transition frequency 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFQ67 Marking: V2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 2 BFQ67R Marking: R67 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 2 13 570 3 BFQ67W Marking: WV2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Document Number 85022 Rev. 3, 20-Jan-99 Test Conditions Tamb 60 C Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 200 150 -65 to +150 Unit V V V mA mW C C www.vishay.com 1 (11) BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu m Symbol RthJA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA VCE = 5 V, IC = 15 mA Symbol Min Typ Max Unit ICES 100 A ICBO 100 nA IEBO 1 A V(BR)CEO 10 V VCEsat 0.1 0.4 V hFE 65 100 150 m m Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Linear output voltage - two tone intermodulation test Third order intercept point www.vishay.com 2 (11) Test Conditions VCE = 8 V, IC = 15 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 8 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 8 V, ZS = ZSopt, f = 800 MHz, IC = 5 mA VCE = 8 V, ZS = ZSopt, f = 800 MHz, IC = 15 mA VCE = 8 V, ZS = 50 , f = 2 GHz, IC = 5 mA VCE = 8 V, ZS = 50 , f = 2 GHz, IC = 15 mA VCE = 8 V, ZS = 50 , ZL = ZLopt, IC = 15 mA, f = 800 MHz VCE = 8 V, ZS = 50 , ZL = ZLopt, IC = 15 mA, f = 2 GHz VCE = 8 V, IC = 15 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 VCE = 8 V, IC = 15 mA, f = 800 MHz Symbol fT Ccb Cce Ceb F Min Typ 7.5 0.4 0.2 0.85 0.8 Max Unit GHz pF pF pF dB F 1.5 dB W F 2.5 dB W F 3.0 dB W Gpe 15.5 dB W Gpe 8 dB V1 = V2 160 mV IP3 26 dBm W Document Number 85022 Rev. 3, 20-Jan-99 BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Common Emitter S-Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA 2 5 5 10 Document Number 85022 Rev. 3, 20-Jan-99 f/MHz 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 LIN MAG 0.894 0.749 0.610 0.486 0.445 0.419 0.402 0.403 0.411 0.423 0.445 0.464 0.490 0.760 0.522 0.390 0.311 0.292 0.282 0.287 0.298 0.313 0.328 0.353 0.379 0.400 0.594 0.346 0.264 0.230 0.224 0.225 0.235 0.251 0.270 0.287 0.310 0.342 0.362 S21 ANG deg -20.6 -56.2 -83.8 -116.2 -132.4 -147.3 -166.6 177.0 167.0 158.5 146.1 137.1 130.5 -32.1 -79.0 -108.5 -139.1 -153.5 -166.5 178.0 164.0 157.1 149.6 140.6 133.2 127.4 -46.3 -101.6 -130.9 -158.2 -169.5 179.8 166.8 156.9 150.2 144.1 136.4 131.0 125.6 LIN MAG 6.78 5.61 4.50 3.36 2.87 2.50 2.12 1.83 1.69 1.59 1.45 1.34 1.27 14.10 9.62 6.72 4.56 3.77 3.21 2.67 2.29 2.10 1.96 1.79 1.65 1.55 22.01 12.12 7.86 5.13 4.21 3.56 2.94 2.51 2.30 2.14 1.95 1.79 1.68 S12 ANG deg 163.0 136.2 117.7 98.8 90.2 81.9 71.7 62.8 58.0 53.0 45.8 39.1 34.7 154.1 121.5 104.7 89.9 83.1 76.7 68.3 60.9 56.6 52.5 46.4 39.4 35.4 144.4 110.8 97.1 85.1 79.5 73.9 66.8 59.9 56.0 52.1 46.2 39.9 35.9 LIN MAG 0.027 0.066 0.086 0.102 0.109 0.115 0.126 0.142 0.156 0.173 0.202 0.232 0.255 0.024 0.052 0.067 0.088 0.103 0.119 0.143 0.169 0.189 0.209 0.239 0.267 0.286 0.021 0.043 0.060 0.088 0.107 0.126 0.154 0.184 0.206 0.226 0.256 0.284 0.302 S22 ANG deg 77.1 59.2 50.0 46.3 46.9 48.7 53.1 58.1 60.8 63.2 65.2 65.5 64.7 72.7 58.5 57.0 60.0 62.1 63.6 64.7 65.5 65.2 64.8 63.5 61.5 59.8 69.8 63.5 66.0 69.0 69.7 69.6 68.6 67.6 66.2 65.1 62.6 60.1 57.8 LIN MAG 0.967 0.834 0.716 0.623 0.590 0.568 0.546 0.531 0.524 0.516 0.511 0.490 0.471 0.912 0.663 0.538 0.473 0.459 0.450 0.438 0.428 0.423 0.415 0.406 0.380 0.358 0.829 0.524 0.431 0.399 0.396 0.393 0.387 0.379 0.374 0.366 0.354 0.325 0.301 ANG deg -8.7 -20.8 -25.9 -28.6 -30.1 -31.8 -35.0 -38.8 -41.9 -45.1 -51.7 -59.1 -64.8 -15.2 -27.9 -28.1 -26.3 -26.4 -27.4 -30.4 -34.2 -37.1 -40.2 -46.8 -53.8 -58.9 -21.7 -29.9 -25.7 -21.9 -21.8 -23.3 -26.6 -30.7 -33.7 -36.9 -43.6 -50.5 -55.3 www.vishay.com 3 (11) BFQ67/BFQ67R/BFQ67W Vishay Semiconductors S11 VCE/V IC/mA 15 5 20 30 www.vishay.com 4 (11) f/MHz 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 LIN MAG 0.477 0.276 0.221 0.208 0.206 0.208 0.221 0.237 0.257 0.280 0.303 0.329 0.357 0.397 0.240 0.205 0.199 0.195 0.202 0.219 0.235 0.252 0.274 0.300 0.326 0.357 0.301 0.219 0.201 0.198 0.201 0.204 0.222 0.242 0.263 0.279 0.308 0.336 0.365 S21 ANG deg -56.7 -116.4 -144.4 -169.5 -177.8 172.5 162.5 154.0 147.5 142.4 135.4 130.0 124.8 -66.0 -128.2 -153.8 -175.5 176.6 168.2 159.0 151.5 145.7 140.0 134.2 129.2 124.8 -82.0 -143.6 -165.8 176.3 170.4 163.8 156.2 149.4 144.6 139.7 133.6 128.8 124.1 LIN MAG 26.58 13.06 8.25 5.34 4.35 3.68 3.03 2.58 2.37 2.21 2.01 1.85 1.73 29.45 13.50 8.43 5.43 4.42 3.73 3.08 2.62 2.40 2.24 2.03 1.87 1.76 32.38 13.79 8.52 5.46 4.43 3.75 3.09 2.62 2.40 2.24 2.03 1.86 1.75 S12 ANG deg 138.3 106.1 94.0 83.2 78.0 72.8 65.9 59.3 55.7 52.1 46.1 39.7 36.0 134.1 103.4 92.3 82.0 77.1 72.0 65.5 59.0 55.2 51.6 46.0 39.6 35.8 128.8 100.3 90.3 80.6 75.9 71.1 64.5 58.1 54.4 50.9 45.0 39.2 35.0 LIN MAG 0.019 0.039 0.059 0.088 0.109 0.129 0.159 0.190 0.212 0.232 0.262 0.290 0.308 0.017 0.038 0.058 0.089 0.110 0.131 0.162 0.193 0.215 0.235 0.265 0.293 0.311 0.016 0.036 0.057 0.090 0.111 0.133 0.164 0.195 0.216 0.238 0.267 0.295 0.313 S22 LIN MAG ANG deg 69.7 67.8 70.9 72.5 72.3 71.6 69.9 68.2 66.7 65.2 62.4 59.5 57.1 69.8 71.1 73.5 74.3 73.8 72.5 70.5 68.6 66.8 65.3 62.4 59.4 57.0 71.9 74.7 76.5 76.1 75.2 73.5 71.3 69.2 67.3 65.6 62.4 59.4 56.8 0.7681 0.4623 0.3912 0.3733 0.3734 0.3736 0.3686 0.3619 0.3561 0.3474 0.3343 0.3053 0.2807 0.722 0.427 0.370 0.360 0.362 0.363 0.359 0.352 0.346 0.338 0.325 0.295 0.270 0.662 0.393 0.352 0.350 0.354 0.356 0.353 0.346 0.340 0.332 0.318 0.288 0.264 ANG deg -25.3 -29.2 -23.1 -19.1 -19.4 -21.1 -24.7 -29.0 -32.1 -35.4 -42.2 -49.1 -53.7 -27.5 -28.1 -21.0 -17.3 -17.7 -19.7 -23.6 -28.0 -31.1 -34.5 -41.1 -48.3 -52.9 -29.4 -25.7 -18.3 -15.2 -16.0 -18.2 -22.3 -26.9 -30.2 -33.6 -40.7 -47.6 -52.1 Document Number 85022 Rev. 3, 20-Jan-99 BFQ67/BFQ67R/BFQ67W Vishay Semiconductors S11 VCE/V IC/mA 2 8 5 10 Document Number 85022 Rev. 3, 20-Jan-99 f/MHz 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 LIN MAG 0.900 0.751 0.615 0.480 0.440 0.408 0.391 0.390 0.398 0.407 0.429 0.454 0.474 0.777 0.532 0.391 0.306 0.283 0.268 0.271 0.281 0.298 0.312 0.339 0.369 0.388 0.618 0.356 0.262 0.218 0.211 0.205 0.219 0.235 0.249 0.268 0.294 0.322 0.352 S21 ANG deg -19.9 -54.9 -82.0 -113.9 -130.1 -145.1 -164.8 178.5 168.6 159.6 147.7 138.6 131.5 -30.5 -76.2 -104.5 -135.8 -149.1 -163.0 -180.0 166.6 158.8 151.8 142.4 134.7 128.9 -43.7 -96.4 -125.0 -153.5 -164.9 -175.7 170.4 158.9 152.1 145.5 138.8 132.3 126.8 LIN MAG 6.84 5.70 4.59 3.43 2.94 2.55 2.16 1.87 1.73 1.62 1.48 1.37 1.29 14.06 9.71 6.82 4.64 3.84 3.27 2.72 2.33 2.14 2.00 1.82 1.68 1.57 21.93 12.30 8.01 5.24 4.28 3.63 3.00 2.56 2.34 2.19 1.99 1.83 1.72 S12 ANG deg 163.2 136.6 118.3 99.5 90.8 82.7 72.4 63.5 58.4 54.0 46.7 39.9 35.2 154.7 122.4 105.5 90.5 83.7 77.3 69.1 61.5 57.3 53.2 46.8 40.1 35.8 145.3 111.7 97.8 85.6 80.1 74.6 67.4 60.5 56.8 52.8 46.9 40.4 36.3 LIN MAG 0.026 0.063 0.083 0.098 0.105 0.112 0.123 0.138 0.153 0.169 0.198 0.226 0.249 0.023 0.050 0.065 0.086 0.101 0.116 0.139 0.165 0.184 0.204 0.232 0.260 0.278 0.020 0.042 0.059 0.086 0.104 0.123 0.150 0.180 0.200 0.221 0.250 0.276 0.294 S22 ANG deg 76.9 59.9 50.7 47.1 47.8 49.8 54.2 59.0 61.7 64.2 65.9 66.3 65.3 73.1 58.9 57.3 60.4 62.3 63.8 65.1 65.9 65.6 65.3 64.1 62.2 60.2 70.6 63.6 66.0 68.9 69.7 69.6 68.8 67.8 66.6 65.4 63.1 60.4 58.0 LIN MAG 0.967 0.838 0.724 0.632 0.601 0.579 0.556 0.544 0.536 0.529 0.523 0.502 0.482 0.916 0.675 0.552 0.489 0.473 0.466 0.454 0.445 0.440 0.432 0.424 0.397 0.373 0.837 0.542 0.448 0.417 0.413 0.411 0.404 0.398 0.392 0.384 0.373 0.343 0.316 ANG deg -8.4 -20.1 -25.0 -27.6 -29.0 -30.8 -33.8 -37.6 -40.4 -43.5 -49.7 -56.8 -62.1 -14.5 -26.7 -27.2 -25.3 -25.5 -26.5 -29.4 -33.0 -35.7 -38.8 -45.0 -51.6 -56.0 -20.6 -28.7 -24.9 -21.1 -21.1 -22.5 -25.9 -29.7 -32.5 -35.6 -42.0 -48.4 -52.2 www.vishay.com 5 (11) BFQ67/BFQ67R/BFQ67W Vishay Semiconductors S11 VCE/V IC/mA 15 8 20 www.vishay.com 6 (11) f/MHz 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 100 300 500 800 1000 1200 1500 1800 2000 2200 2500 2800 3000 LIN MAG 0.512 0.279 0.215 0.191 0.186 0.189 0.203 0.219 0.238 0.252 0.282 0.312 0.335 0.436 0.239 0.192 0.178 0.177 0.176 0.195 0.214 0.229 0.251 0.275 0.304 0.333 S21 ANG deg -52.8 -109.2 -137.0 -164.4 -173.2 177.0 164.6 155.3 148.9 143.5 136.5 130.7 126.0 -60.6 -118.9 -147.0 -170.5 -179.4 172.3 161.7 153.4 148.2 142.5 135.6 130.5 125.8 LIN MAG 26.62 13.28 8.43 5.46 4.44 3.76 3.10 2.65 2.42 2.26 2.05 1.88 1.77 29.61 13.78 8.62 5.55 4.51 3.82 3.15 2.69 2.45 2.28 2.08 1.91 1.79 S12 ANG deg 139.4 106.8 94.6 83.6 78.5 73.4 66.6 60.1 56.1 52.6 46.8 40.7 36.7 135.1 104.1 92.8 82.5 77.5 72.6 66.0 59.6 56.1 52.4 46.5 40.7 36.4 LIN MAG 0.019 0.039 0.057 0.086 0.107 0.126 0.155 0.185 0.206 0.226 0.256 0.282 0.300 0.017 0.037 0.057 0.087 0.108 0.128 0.157 0.188 0.209 0.230 0.258 0.286 0.303 S22 LIN MAG ANG deg 70.3 67.4 70.3 72.1 72.1 71.5 69.8 68.4 66.9 65.5 62.9 60.2 57.8 69.8 70.4 72.9 73.8 73.4 72.4 70.6 68.8 67.2 65.6 62.8 59.9 57.6 0.780 0.480 0.408 0.391 0.391 0.392 0.386 0.380 0.374 0.367 0.355 0.325 0.302 0.735 0.444 0.387 0.378 0.380 0.382 0.378 0.371 0.366 0.358 0.345 0.316 0.292 ANG deg -24.0 -28.0 -22.1 -18.5 -18.9 -20.4 -24.0 -28.1 -31.0 -34.1 -40.7 -47.2 -51.4 -26.1 -26.9 -20.3 -16.7 -17.2 -19.2 -22.9 -27.2 -30.1 -33.4 -40.0 -46.5 -50.8 Document Number 85022 Rev. 3, 20-Jan-99 BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb - Collector Base Capacitance ( pF ) P tot - Total Power Dissipation ( mW ) 300 250 200 150 100 50 0 0 20 40 60 80 0.4 0.2 f=1MHz 0 0 4 8 12 16 20 VCB - Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage 10000 5 8000 F - Noise Figure ( dB ) f T - Transition Frequency ( MHz ) 0.6 12884 Figure 1. Total Power Dissipation vs. Ambient Temperature 6000 4000 VCE=8V f=500MHz 2000 0 4 f=2GHz 3 2 f=800MHz 1 VCE=8V ZS=50 W 0 0 12867 0.8 100 120 140 160 Tamb - Ambient Temperature ( C ) 96 12159 1.0 10 20 30 40 50 IC - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Document Number 85022 Rev. 3, 20-Jan-99 0 12869 5 10 15 20 25 IC - Collector Current ( mA ) Figure 4. Noise Figure vs. Collector Current www.vishay.com 7 (11) BFQ67/BFQ67R/BFQ67W Vishay Semiconductors VCE = 8 V, IC = 15 mA , Z0 = 50 W S12 S11 j 90 120 j0.5 60 j2 3.0 GHz 150 j0.2 j5 30 2.0 3.0 GHz AAA AAAAAA AAA AAAAAA 1.0 1 2.0 0 0.2 1.0 1 2 5 0.1 180 0.2 0.4 0 0.3 -j0.2 -j5 0.1 -150 -j0.5 -30 -j2 -120 -j 12 998 -60 -90 12 999 Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient S21 S22 j 90 120 60 j0.5 150 j2 30 j0.2 0.1 0.3 1.0 180 3.0 GHz 20 40 0 0 j5 AA AA AA AA AAAA AA AA 0.2 0.5 1 3.0 GHz 0.8 1.0 -j0.2 -150 1 5 -j5 -30 -j0.5 -120 13 000 -90 Figure 6. Forward transmission coefficient www.vishay.com 8 (11) -j2 -60 13 501 -j Figure 8. Output reflection coefficient Document Number 85022 Rev. 3, 20-Jan-99 BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Dimensions of BFQ67 in mm 15930 Dimensions of BFQ67R in mm 15931 Document Number 85022 Rev. 3, 20-Jan-99 www.vishay.com 9 (11) BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Dimensions of BFQ67W in mm 96 12236 www.vishay.com 10 (11) Document Number 85022 Rev. 3, 20-Jan-99 BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify VishaySemiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85022 Rev. 3, 20-Jan-99 www.vishay.com 11 (11)