BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 1 (11)
Document Number 85022
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated
gain performance at UHF, VHF and microwave fre-
quencies.
Features
D
Small feedback capacitance
D
Low noise figure
D
High transition frequency
13 581
23
1
94 9280
BFQ67 Marking: V2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
23
1
9510527
BFQ67R Marking: R67
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
313 652 13 570
BFQ67W Marking: WV2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 2.5 V
Collector current IC50 mA
Total power dissipation Tamb ≤ 60
°
C Ptot 200 mW
Junction temperature Tj150
°
C
Storage temperature range Tstg –65 to +150
°
C
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
2 (11) Document Number 85022
Maximum Thermal Resistance
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35
m
m Cu RthJA 450 K/W
Electrical DC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 ICES 100
m
A
Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1
m
A
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 10 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA hFE 65 100 150
Electrical AC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 8 V, IC = 15 mA, f = 500 MHz fT7.5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.4 pF
Collector-emitter capacitance VCE = 8 V, f = 1 MHz Cce 0.2 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.85 pF
Noise figure VCE = 8 V, ZS = ZSopt, f = 800 MHz,
IC = 5 mA F 0.8 dB
VCE = 8 V, ZS = ZSopt, f = 800 MHz,
IC = 15 mA F 1.5 dB
VCE = 8 V, ZS = 50
W
, f = 2 GHz,
IC = 5 mA F 2.5 dB
VCE = 8 V, ZS = 50
W
, f = 2 GHz,
IC = 15 mA F 3.0 dB
Power gain VCE = 8 V, ZS = 50
W
, ZL = ZLopt,
IC = 15 mA, f = 800 MHz Gpe 15.5 dB
VCE = 8 V, ZS = 50
W
, ZL = ZLopt,
IC = 15 mA, f = 2 GHz Gpe 8 dB
Linear output voltage – two
tone intermodulation test VCE = 8 V, IC = 15 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
W
V1 = V2160 mV
Third order intercept point VCE = 8 V, IC = 15 mA, f = 800 MHz IP326 dBm
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 3 (11)
Document Number 85022
Common Emitter S–Parameters
Z0 = 50
W,
Tamb = 25
_
C, unless otherwise specified
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.894 –20.6 6.78 163.0 0.027 77.1 0.967 –8.7
300 0.749 –56.2 5.61 136.2 0.066 59.2 0.834 –20.8
500 0.610 –83.8 4.50 117.7 0.086 50.0 0.716 –25.9
800 0.486 –116.2 3.36 98.8 0.102 46.3 0.623 –28.6
1000 0.445 –132.4 2.87 90.2 0.109 46.9 0.590 –30.1
1200 0.419 –147.3 2.50 81.9 0.115 48.7 0.568 –31.8
2 1500 0.402 –166.6 2.12 71.7 0.126 53.1 0.546 –35.0
1800 0.403 177.0 1.83 62.8 0.142 58.1 0.531 –38.8
2000 0.411 167.0 1.69 58.0 0.156 60.8 0.524 –41.9
2200 0.423 158.5 1.59 53.0 0.173 63.2 0.516 –45.1
2500 0.445 146.1 1.45 45.8 0.202 65.2 0.511 –51.7
2800 0.464 137.1 1.34 39.1 0.232 65.5 0.490 –59.1
3000 0.490 130.5 1.27 34.7 0.255 64.7 0.471 –64.8
100 0.760 –32.1 14.10 154.1 0.024 72.7 0.912 –15.2
300 0.522 –79.0 9.62 121.5 0.052 58.5 0.663 –27.9
500 0.390 –108.5 6.72 104.7 0.067 57.0 0.538 –28.1
800 0.311 –139.1 4.56 89.9 0.088 60.0 0.473 –26.3
1000 0.292 –153.5 3.77 83.1 0.103 62.1 0.459 –26.4
1200 0.282 –166.5 3.21 76.7 0.119 63.6 0.450 –27.4
5 5 1500 0.287 178.0 2.67 68.3 0.143 64.7 0.438 –30.4
1800 0.298 164.0 2.29 60.9 0.169 65.5 0.428 –34.2
2000 0.313 157.1 2.10 56.6 0.189 65.2 0.423 –37.1
2200 0.328 149.6 1.96 52.5 0.209 64.8 0.415 –40.2
2500 0.353 140.6 1.79 46.4 0.239 63.5 0.406 –46.8
2800 0.379 133.2 1.65 39.4 0.267 61.5 0.380 –53.8
3000 0.400 127.4 1.55 35.4 0.286 59.8 0.358 –58.9
100 0.594 –46.3 22.01 144.4 0.021 69.8 0.829 –21.7
300 0.346 –101.6 12.12 110.8 0.043 63.5 0.524 –29.9
500 0.264 –130.9 7.86 97.1 0.060 66.0 0.431 –25.7
800 0.230 –158.2 5.13 85.1 0.088 69.0 0.399 –21.9
1000 0.224 –169.5 4.21 79.5 0.107 69.7 0.396 –21.8
1200 0.225 179.8 3.56 73.9 0.126 69.6 0.393 –23.3
10 1500 0.235 166.8 2.94 66.8 0.154 68.6 0.387 –26.6
1800 0.251 156.9 2.51 59.9 0.184 67.6 0.379 –30.7
2000 0.270 150.2 2.30 56.0 0.206 66.2 0.374 –33.7
2200 0.287 144.1 2.14 52.1 0.226 65.1 0.366 –36.9
2500 0.310 136.4 1.95 46.2 0.256 62.6 0.354 –43.6
2800 0.342 131.0 1.79 39.9 0.284 60.1 0.325 –50.5
3000 0.362 125.6 1.68 35.9 0.302 57.8 0.301 –55.3
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
4 (11) Document Number 85022
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.477 –56.7 26.58 138.3 0.019 69.7 0.7681 –25.3
300 0.276 –116.4 13.06 106.1 0.039 67.8 0.4623 –29.2
500 0.221 –144.4 8.25 94.0 0.059 70.9 0.3912 –23.1
800 0.208 –169.5 5.34 83.2 0.088 72.5 0.3733 –19.1
1000 0.206 –177.8 4.35 78.0 0.109 72.3 0.3734 –19.4
1200 0.208 172.5 3.68 72.8 0.129 71.6 0.3736 –21.1
15 1500 0.221 162.5 3.03 65.9 0.159 69.9 0.3686 –24.7
1800 0.237 154.0 2.58 59.3 0.190 68.2 0.3619 –29.0
2000 0.257 147.5 2.37 55.7 0.212 66.7 0.3561 –32.1
2200 0.280 142.4 2.21 52.1 0.232 65.2 0.3474 –35.4
2500 0.303 135.4 2.01 46.1 0.262 62.4 0.3343 –42.2
2800 0.329 130.0 1.85 39.7 0.290 59.5 0.3053 –49.1
3000 0.357 124.8 1.73 36.0 0.308 57.1 0.2807 –53.7
100 0.397 –66.0 29.45 134.1 0.017 69.8 0.722 –27.5
300 0.240 –128.2 13.50 103.4 0.038 71.1 0.427 –28.1
500 0.205 –153.8 8.43 92.3 0.058 73.5 0.370 –21.0
800 0.199 –175.5 5.43 82.0 0.089 74.3 0.360 –17.3
1000 0.195 176.6 4.42 77.1 0.110 73.8 0.362 –17.7
1200 0.202 168.2 3.73 72.0 0.131 72.5 0.363 –19.7
5 20 1500 0.219 159.0 3.08 65.5 0.162 70.5 0.359 –23.6
1800 0.235 151.5 2.62 59.0 0.193 68.6 0.352 –28.0
2000 0.252 145.7 2.40 55.2 0.215 66.8 0.346 –31.1
2200 0.274 140.0 2.24 51.6 0.235 65.3 0.338 –34.5
2500 0.300 134.2 2.03 46.0 0.265 62.4 0.325 –41.1
2800 0.326 129.2 1.87 39.6 0.293 59.4 0.295 –48.3
3000 0.357 124.8 1.76 35.8 0.311 57.0 0.270 –52.9
100 0.301 –82.0 32.38 128.8 0.016 71.9 0.662 –29.4
300 0.219 –143.6 13.79 100.3 0.036 74.7 0.393 –25.7
500 0.201 –165.8 8.52 90.3 0.057 76.5 0.352 –18.3
800 0.198 176.3 5.46 80.6 0.090 76.1 0.350 –15.2
1000 0.201 170.4 4.43 75.9 0.111 75.2 0.354 –16.0
1200 0.204 163.8 3.75 71.1 0.133 73.5 0.356 –18.2
30 1500 0.222 156.2 3.09 64.5 0.164 71.3 0.353 –22.3
1800 0.242 149.4 2.62 58.1 0.195 69.2 0.346 –26.9
2000 0.263 144.6 2.40 54.4 0.216 67.3 0.340 –30.2
2200 0.279 139.7 2.24 50.9 0.238 65.6 0.332 –33.6
2500 0.308 133.6 2.03 45.0 0.267 62.4 0.318 –40.7
2800 0.336 128.8 1.86 39.2 0.295 59.4 0.288 –47.6
3000 0.365 124.1 1.75 35.0 0.313 56.8 0.264 –52.1
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 5 (11)
Document Number 85022
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.900 –19.9 6.84 163.2 0.026 76.9 0.967 –8.4
300 0.751 –54.9 5.70 136.6 0.063 59.9 0.838 –20.1
500 0.615 –82.0 4.59 118.3 0.083 50.7 0.724 –25.0
800 0.480 –113.9 3.43 99.5 0.098 47.1 0.632 –27.6
1000 0.440 –130.1 2.94 90.8 0.105 47.8 0.601 –29.0
1200 0.408 –145.1 2.55 82.7 0.112 49.8 0.579 –30.8
2 1500 0.391 –164.8 2.16 72.4 0.123 54.2 0.556 –33.8
1800 0.390 178.5 1.87 63.5 0.138 59.0 0.544 –37.6
2000 0.398 168.6 1.73 58.4 0.153 61.7 0.536 –40.4
2200 0.407 159.6 1.62 54.0 0.169 64.2 0.529 –43.5
2500 0.429 147.7 1.48 46.7 0.198 65.9 0.523 –49.7
2800 0.454 138.6 1.37 39.9 0.226 66.3 0.502 –56.8
3000 0.474 131.5 1.29 35.2 0.249 65.3 0.482 –62.1
100 0.777 –30.5 14.06 154.7 0.023 73.1 0.916 –14.5
300 0.532 –76.2 9.71 122.4 0.050 58.9 0.675 –26.7
500 0.391 –104.5 6.82 105.5 0.065 57.3 0.552 –27.2
800 0.306 –135.8 4.64 90.5 0.086 60.4 0.489 –25.3
1000 0.283 –149.1 3.84 83.7 0.101 62.3 0.473 –25.5
1200 0.268 –163.0 3.27 77.3 0.116 63.8 0.466 –26.5
8 5 1500 0.271 –180.0 2.72 69.1 0.139 65.1 0.454 –29.4
1800 0.281 166.6 2.33 61.5 0.165 65.9 0.445 –33.0
2000 0.298 158.8 2.14 57.3 0.184 65.6 0.440 –35.7
2200 0.312 151.8 2.00 53.2 0.204 65.3 0.432 –38.8
2500 0.339 142.4 1.82 46.8 0.232 64.1 0.424 –45.0
2800 0.369 134.7 1.68 40.1 0.260 62.2 0.397 –51.6
3000 0.388 128.9 1.57 35.8 0.278 60.2 0.373 –56.0
100 0.618 –43.7 21.93 145.3 0.020 70.6 0.837 –20.6
300 0.356 –96.4 12.30 111.7 0.042 63.6 0.542 –28.7
500 0.262 –125.0 8.01 97.8 0.059 66.0 0.448 –24.9
800 0.218 –153.5 5.24 85.6 0.086 68.9 0.417 –21.1
1000 0.211 –164.9 4.28 80.1 0.104 69.7 0.413 –21.1
1200 0.205 –175.7 3.63 74.6 0.123 69.6 0.411 –22.5
10 1500 0.219 170.4 3.00 67.4 0.150 68.8 0.404 –25.9
1800 0.235 158.9 2.56 60.5 0.180 67.8 0.398 –29.7
2000 0.249 152.1 2.34 56.8 0.200 66.6 0.392 –32.5
2200 0.268 145.5 2.19 52.8 0.221 65.4 0.384 –35.6
2500 0.294 138.8 1.99 46.9 0.250 63.1 0.373 –42.0
2800 0.322 132.3 1.83 40.4 0.276 60.4 0.343 –48.4
3000 0.352 126.8 1.72 36.3 0.294 58.0 0.316 –52.2
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
6 (11) Document Number 85022
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.512 –52.8 26.62 139.4 0.019 70.3 0.780 –24.0
300 0.279 –109.2 13.28 106.8 0.039 67.4 0.480 –28.0
500 0.215 –137.0 8.43 94.6 0.057 70.3 0.408 –22.1
800 0.191 –164.4 5.46 83.6 0.086 72.1 0.391 –18.5
1000 0.186 –173.2 4.44 78.5 0.107 72.1 0.391 –18.9
1200 0.189 177.0 3.76 73.4 0.126 71.5 0.392 –20.4
15 1500 0.203 164.6 3.10 66.6 0.155 69.8 0.386 –24.0
1800 0.219 155.3 2.65 60.1 0.185 68.4 0.380 –28.1
2000 0.238 148.9 2.42 56.1 0.206 66.9 0.374 –31.0
2200 0.252 143.5 2.26 52.6 0.226 65.5 0.367 –34.1
2500 0.282 136.5 2.05 46.8 0.256 62.9 0.355 –40.7
2800 0.312 130.7 1.88 40.7 0.282 60.2 0.325 –47.2
8
3000 0.335 126.0 1.77 36.7 0.300 57.8 0.302 –51.4
8
100 0.436 –60.6 29.61 135.1 0.017 69.8 0.735 –26.1
300 0.239 –118.9 13.78 104.1 0.037 70.4 0.444 –26.9
500 0.192 –147.0 8.62 92.8 0.057 72.9 0.387 –20.3
800 0.178 –170.5 5.55 82.5 0.087 73.8 0.378 –16.7
1000 0.177 –179.4 4.51 77.5 0.108 73.4 0.380 –17.2
1200 0.176 172.3 3.82 72.6 0.128 72.4 0.382 –19.2
20 1500 0.195 161.7 3.15 66.0 0.157 70.6 0.378 –22.9
1800 0.214 153.4 2.69 59.6 0.188 68.8 0.371 –27.2
2000 0.229 148.2 2.45 56.1 0.209 67.2 0.366 –30.1
2200 0.251 142.5 2.28 52.4 0.230 65.6 0.358 –33.4
2500 0.275 135.6 2.08 46.5 0.258 62.8 0.345 –40.0
2800 0.304 130.5 1.91 40.7 0.286 59.9 0.316 –46.5
3000 0.333 125.8 1.79 36.4 0.303 57.6 0.292 –50.8
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 7 (11)
Document Number 85022
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
Tamb – Ambient Temperature ( °C )96 12159
P – Total Power Dissipation ( mW )
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
2000
4000
6000
8000
10000
0 1020304050
IC – Collector Current ( mA )12867
f – Transition Frequency ( MHz )
T
VCE=8V
f=500MHz
Figure 2. Transition Frequency vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )12884
C – Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
0
1
2
3
4
5
0 5 10 15 20 25
IC – Collector Current ( mA )12869
F – Noise Figure ( dB )
f=800MHz
f=2GHz
VCE=8V
ZS=50
W
Figure 4. Noise Figure vs. Collector Current
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
8 (11) Document Number 85022
VCE = 8 V, IC = 15 mA , Z0 = 50
W
S11
12 998
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
3.0 GHz
1.0
0.1
0.3
2.0
Figure 5. Input reflection coefficient
S21
13 000
0°
90°
180°
–90°
20 40
–150°
–120°–60°
–30°
120°
150°
60°
30°
3.0 GHz
1.0
0.1 0.3
Figure 6. Forward transmission coefficient
S12
12 999
0°
90°
180°
–90°
0.2 0.4
–150°
–120°–60°
–30°
120°
150°
60°
30°
3.0 GHz
1.0
0.1
2.0
Figure 7. Reverse transmission coefficient
S22
13 501
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁ
ÁÁ
0.2
ÁÁ
ÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
5
3.0 GHz 1.0
0.8
Figure 8. Output reflection coefficient
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 9 (11)
Document Number 85022
Dimensions of BFQ67 in mm
15930
Dimensions of BFQ67R in mm
15931
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com Rev. 3, 20-Jan-99
10 (11) Document Number 85022
Dimensions of BFQ67W in mm
96 12236
BFQ67/BFQ67R/BFQ67W
Vishay Semiconductors
www.vishay.com
Rev. 3, 20-Jan-99 11 (11)
Document Number 85022
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify VishaySemiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
