e
1
0
5
10
15
20
25
30
35
40
012345
Input Power (Watts)
Output Power (Watts)
VCC = 25 V
ICQ = 100 mA
f = 900 MH z
Typical O utput Power vs. Input Pow er
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 40 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC6.7 Adc
Total Device Dissipation at Tflange = 25°C PD65 Watts
Above 25°C derate by 0.37 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 2.7 °C/W
PTB 20038
25 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
20038
LOT CODE
Description
The 20038 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 25 watts minimum output power, it may be used for
both CW and PEP applications. It is specifically designed for high
efficiency operation at average power levels around 10 watts with
high PEP capacity. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability . 100%
lot traceability is standard.
25 Watts, 860–900 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20200
9/28/98
PTB 20038
2
e
0
10
20
30
40
50
60
70
80
840 855 870 885 900 915
Frequency (MHz)
Efficiency (%)
VCC = 25 V
ICQ = 100m A
Circuit Tuned for
25 W Load Line
Pout = 25 W
Pout = 10 W
Efficiency vs. Frequency
(as m e aseure d i n a broadband ci rcuit)
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts
Breakdown Voltage C to E VBE = 0 V, I C = 100 mA V(BR)CES 55 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts
DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz) Gpe 9.0 10.0 — dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz) ηC50 — — %
Gain
(VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz) Gpe 10 11 — dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz) ηC35 — — %
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, Ψ— — 30:1 —
f = 900 MHz—all phase angles at frequency of test)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
