700 Dim. Inches Millimeter P N Minimum Maximum Minimum Maximum Notes AA = A --- --- --- --- 1 +t B 1.050 1.060 26.67 26.92 B C --- 1.161 --- 29.49 mi D 5.850 6.144 149.10 156.06 E 6.850 7.375 173.99 187.33 F .797 .827 20.24 21.01 G .276 .286 701 7.26 Z| E H --- .948 --- 24.08 Vv J 425 .499 10.80 12.67 2 X 7 K .260 .280 6.60 7.11 Dia. W si U M .900 .600 12.70 15.24 N 140 .150 3.56 3.81 P --- .295 --- 7.49 4 | R --- .900 --- 22.86 Dia. S .225 .275 6.48 6.99 J GF ae T 1.750 --- 44.45 = U .370 .380 9.40 9.65 TO208AD | TO-209AC | V 213 223 5.41 5.66 Dia. (To- 83) (To-94) W .065 .075 1.65 1.91 Dia. X 215 .225 5.46 5.72 Note 1: 1/2-20 UNF-3A Y .290 0315 7.37 8.00 Note 2: Full thread within 2 1/2 threads Z ol4 950 13.06 13.46 Note 3: For insulated cathode lead, AA .089 .099 2.26 2.51 add suffix "IL" to catalog number Microsemi Forward & Reverse Reverse Transient . Catalog Number Repetitive Blocking Blocking e High dv/dt200 V/usec. Standard Lead Flag Lead 1200 Amperes surge current 70C50B 70C50BF 500 600 Low forward on-state voltage 70C60B 70C60BF 600 700 Package conforming to either TO209AC or 7OCi008 = 7OCIOOBF==S#1000 1100 TO-208AD outline 7001208 70C120BF 1200 1300 e cpplications for general purpose phase control To specify dv/dt other than 200V/usec., contact factory. Electrical Characteristics Max. RMS on-state current | T(RMS) 110 Amps Tc = 78C Max. average on-state cur. yay) 70 Amps Tc = 78C Max. peak on-state voltage VIM 1.4 Volts ITM = 220 A(peak) Max. holding current Iq 200 mA Max. peak one cycle surge current ITSM =: 1600 A Tc = 78C, 60Hz Max. I2t capability for fusing 12 6000A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range TJ Storage temperature range TSTG Maximum thermal resistance R@JC Typical thermal resistance (greased) Recs Max mounting torque Weight -65C to 125C 65C to 150C 0.28C/W Junction to case 0.20C/W Case to sink 100-130 inch pounds 70C-B Approx. 3.6 ounces (102.0 grams) typical 70C-BF Approx. 3.24 ounces (91.8 grams) typical LAWRENCE OWVicrosemi 6 Lake Street Lawrence, MA 01841 PH: (978) 620-2600 FAX: (978) 689-0803 042507 Rev. 3 www.microsemi.com /OC Switching Critical rate of rise of onstate current (note 1) di/dt 100A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. 5 Typical circuit commuted turnoff time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turnoff interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VET 3.0V TJ = 25C Max. nontriggering gate voltage VeD 0.25V W = 125C Max. gate current to trigger | GT 100mA TJ = 25C Max. peak gate power PGM 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4.0A Max. peak gate voltage (forward) ey 10V Max. peak gate voltage (reverse) VeM 5.0V Blocking Max. leakage current lDRM, !RRM 10mA Ty =125C &V DRM,VRRM Max. reverse leakage IDRM,!RRM 100uA Ty =25C & VDRMVRRM Critical rate of rise of offstate voltage dv/dt 200V /usec. Ty =125C 04-25-07 Rev. 3 /OC Figure 1 Figure 3 Typical Forward OnState Characteristics Maximum Power Dissipation ' # 140 - 8000 gz /'80 120 ab 105) 6000 | go JV 100 AF 4000 3 30 / /, 3 80 } L * 60 4 J, g SM 2 40 7 J E o- 1000 E 20 800 x 600 = 90 0 10 20 30 40 50 60 70 80 90 100 400 Average On-State Current Amperes o Figure 4 & 200 Transient Thermal Impedance & 0.7 | z 0.6 5 100 = , 3 80 O05 60 | = 0.4 ? 40 5 & & 0.3 co 8 a eee 3 02 5 20 s Ue] 5 SE 0.1 rq n c oO = 10 3 2 6 10 14 18 22 26 30 -001 01 0.1 1.0 10 100 Instantaneous OnState Voltage Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating o Maximum Nonrepetitive Surge Current oO oO g 130 S 1600 E = 120 < 1500 \ 5 NS = 110 XX 4400 G \ NN x N ANS 8 100 INN 1300 & \ SY a NS IN 1200 a xs 90 SN NS 4 9g NY o + = 80 1100 E c 2 70 1000 N 8 N = 60 30}| 607} | 90|}1201| 180 900 0 20 40 60 80 100 1 10 100 Average OnState Current Amperes Number of Cycles 04-25-07 Rev. 3