MITSUBISHI LASER DIODES
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
TYPE
NAME ML9SM41
DESCRIPTION
ML9XX41 series are DFB (Distributed Feedback) laser diodes with a
monolithically integrated EA modulator, suitable light source for 10Gbps
application.
ML9SM41 is supplied with the chip-on-carrier type package.
FEATURES
• Dispersion penalty less than 2dB at 9.95328Gbps, +1600ps/nm
• High extinction ratio (Min. 10dB at 9.95328Gbps)
• High - side mode suppression ratio (Typ. 40dB)
• High speed response (Typ. 30psec)
APPLICATION
10Gbps transmission system
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
IF Forward current (Laser diode) CW 150 mA
VRL Reverse voltage (Laser diode) - 2 V
VEA Reverse voltage (Modulator) - -3 V
Tc Case temperature - +25 to +40 degC
Tstg Storage temperature - -40 to +100 degC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=35degC)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ith Threshold current CW, Vmod=0V --- 15 30 mA
Iop Operation current CW, Po=6.5mW, Vmod=0V --- 85 100 mA
Vop Operating voltage CW, Po=6.5mW, Vmod=0V --- 1.6 1.8 V
λp Peak wavelength CW, If=Iop, Vmod=0V 1530 --- 1565 nm
θ// Beam divergence angle (parallel) CW, Po=6.5mW, Vmod=0V --- 30 --- deg.
θ⊥ Beam divergence angle
(perpendicular) CW, Po=6.5mW, Vmod=0V --- 42 --- deg.
Pm Monitoring output power CW, Po=6.5mW, Vmod=0V --- 2.0 --- mW
fc Cut off frequency CW, If=Iop, Vmod=-1V 10 14 --- GHz
tr,tf Rise and fall time (20%-80%) --- --- 30 psec
SMSR Side mode suppression ratio 35 40 --- dB
Ex Extinction ratio
9.95328Gbps, NRZ, PRBS 223-1
If=Iop, Vpp=2V,
Voffset=0 to -1.0V 10 --- --- dB
Pp Dispersion penalty ditto
+1600ps/nm @BER=10-10 --- --- 2.0 dB
MITSUBISHI
ELECTRIC
Ma
r
. 20
0
6
Notice: Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9XX41 SERIES
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
MITSUBISHI
ELECTRIC
Ma
r
. 200
6
OUTLINE DRAWINGS
0.75
0.1
(0.225)
0.6
0.15
Rear
Front
0.15
1.08
Beam
Point
0.38±0.05
0.1 ~
0.3
(1)
(2)
(3) (3)
0.75
0.1
(0.225)
0.6
0.15
Rear
Front
0.15
1.08
Beam
Point
0.38±0.05
0.1 ~
0.3
(1)
1.08
Beam
Point
0.38±0.05
0.1 ~
0.3
(1)
(2)
(3) (3)
ML9SM41
Notice: Some parametric limits are subject to change.
*) The LD and EAM cathode is contacted
with the back side of the carrier.
ML9SM41
(1) Case
EAM LD
(3) (2)
