DATA SH EET
Product data sheet
Supersedes data of 2002 Jan 23 2004 Aug 10
DISCRETE SEMICONDUCTORS
1N4148; 1N4448
High-speed diodes
M3D17
6
2004 Aug 10 2
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
FEATURES
•Hermetically sealed leaded glass SOD27 (DO-35)
package
•High switching speed: max. 4 ns
•General application
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•High-speed s witching.
DESCRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes
fabricated in planar tec hnology, and encapsulate d in
hermetically sealed leaded glass SOD27 (DO-35)
packages.
MARKING
TYPE NUMBER MARKING CODE
1N4148 1N4148 PH or 4148PH
1N4448 1N4448
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM246
ka
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
1N4148 −hermetically sealed glass package; axial leaded ; 2 leads SOD27
1N4448
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NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4148; 1N4448
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board ; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −100 V
VRcontinuous revers e voltage −100 V
IFcontinuous forward current see Fig.2; note 1 −200 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs−4 A
t = 1 ms −1 A
t = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −500 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
1N4148 IF = 10 mA −1 V
1N4448 IF = 5 mA 0.62 0.72 V
IF = 100 mA −1 V
IRreverse current VR = 20 V; see Fig.5 25 nA
VR = 20 V; Tj = 150 °C; see Fig.5 −50 µA
IRreverse curr ent; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 −3µA
Cddiode capacitan ce f = 1 MHz; VR = 0 V; see Fig.6 −4pF
trr reverse recove ry time when switch ed from IF = 10 mA to
IR = 60 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
−4ns
Vfr forward recove ry voltage when switched from IF = 50 mA;
tr = 20 ns; see Fig.8 −2.5 V
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n a printed-circuit board wi thout metalliza tion pad.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
2004 Aug 10 4
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4148; 1N4448
GRAPHICAL DATA
0 100 200
300
200
0
100
mbg451
Tamb (°C)
IF
(mA)
Fig.2 Maximum permissible continuous forward
current as a func tion of ambient
temperature.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
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NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4148; 1N4448
0 100 Tj (°C) 200
103
102
10−1
10−2
10 (1)
1
IR
(µA)
mgd290
(2)
Fig.5 Reverse current as a fun ction of junction
temperature.
(1) VR = 75 V; typical values.
(2) VR = 20 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
2004 Aug 10 6
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4148; 1N4448
Fig.7 Reverse reco very voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
2004 Aug 10 7
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4148; 1N4448
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
05-12-22
Hermetically sealed glass package; axial leaded; 2 leads SOD2
7
UNIT b
max.
mm 0.56
D
max. G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
2004 Aug 10 8
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4148; 1N4448
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
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not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands R76/05/pp9 Date of release: 2004 Aug 10 Document orde r number: 9397 750 13541
