Copyright 2002 Semicoa Semiconductors, Inc.
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5038
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5038J)
• JANTX level (2N5038JX)
• JANTXV level (2N5038JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• High-speed power-switching
• High power
• NPN silicon transistor
Features
• Hermetically sealed TO-3 metal can
• Also available in chip configuration
• Chip geometry 9351
• Reference document:
MIL-PRF-19500/439
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 90
Volts
Collector-Base Voltage VCBO 150
Volts
Emitter-Base Voltage VEBO 7
Volts
Collector Current, Continuous IC 20
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 140
800
W
mW/°C
Thermal Resistance RθJA 1.25 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5038
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 200 mA 90 Volts
Emitter-Base Breakdown Voltage V(BR)EBO I
E = 25 mA 7 Volts
Collector-Base Cutoff Current ICBO1 V
CB = 150 Volts 1 µA
Collector-Emitter Cutoff Current ICEO V
CE = 70 Volts 1 µA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE =100Volts, VEB =1.5Volts
VCE =100Volts, VEB=1.5Volts,
TA = 150°C
5
100
µA
Emitter-Base Cutoff Current IEBO V
EB = 5 Volts 1 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.5 A, VCE = 5 Volts
IC = 2 A, VCE = 5 Volts
IC = 12 A, VCE = 5 Volts
IC = 12 A, VCE = 5 Volts
TA = -55°C
50
50
15
10
200
Base-Emitter Voltage VBE V
CE = 5 Volts, IC = 12 A 1.8 Volts
Base-Emitter Saturation Voltage VBEsat I
C = 20 A, IB = 5 A 3.3 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 12 A, IB = 1.2 A
IC = 20 A, IB = 5 A
1.0
2.5 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 2 A,
f = 5 MHz 12 48
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 500
pF
Switching Characteristics
Saturated Turn-On Time tON I
C = 12 A, IB1 = 1.2 A 0.5 µs
Saturated Turn-Off Time tOFF I
C = 12 A, IB1 = -IB2 = 1.2 A 2.0 µs