Shenzhen SI Semiconductors Co., LTD. Product Specification
Si semiconductors 2004.10 1
MJE LOW VOLTAGE SERIES TRANSISTORS MJE13009L
FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
APPLICATION: SUITABLE FOR 110V CIRCUIT MODE FLUORESCENT LAMP
ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings Tc=25°C TO-220
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter- Base Voltage VEBO 9 V
Collector Current IC 20 A
Total Power Dissipation PC 80 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65-150 °C
Electronic Characteristics Tc=25°C
CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT
Collector-Base Cutoff Current ICBO V
CB=400V 100
A
Collector-Emitter Cutoff Current ICEO V
CE=200V,IB=0 250
A
Collector-Emitter Voltage VCEO I
C=10mA,IB=0 200 V
Emitter -Base Voltage VEBO I
E=1mA,IC=0 9 V
IC=2.0A,IB=0.4A 0.5
IC=8.0A,IB=1.6A 1.0
Collector-Emitter Saturation Voltage Vces
IC=12.0A,IB=3.0A 2.0
V
Base-Emitter Saturation Voltage Vbes IC=5.0A,IB=1.0A 1.5 V
VCE=5V,IC=10 mA 8
VCE=5V,IC=2.0 A 10 40
DC Current Gain hFE
VCE=5V,IC=15.0 A 5
Shenzhen SI Semiconductors Co., LTD. Product Specification
Si semiconductors 2004.10 2
0.1
1
10
0.01 0.1 1 10 100
Ic(A)
Vbes(v)
0.01
0.1
1
10
100
1 10 100 1000
Vce(V)
Ic(A)
0.01
0.1
1
10
0.01 0.1 1 10 100
Ic(A)
Vces(v)
1
10
100
0.01 0.1 1 10 100
Ic(A)
hFE
1
10
100
0.01 0.1 1 10 100
Ic(A)
hFE
0
20
40
60
80
100
120
0 50 100 150 200
Tj( )
%
MJE LOW VOLTAGE SERIES TRANSISTORS MJE13009L
SOA (DC) Pc Tj
hFE - Ic h
FE - Ic
Vces - Ic Vbes - Ic
Vce=1.5V
T
j
=25
IS/B
Ptot
Vce=5V
hFE=5 hFE=5
T
j
= − 40
Tj
=
125
T
j
=125
Tj=25
Tj= − 40
T
j
=25
T
j
= − 40
Tj
=
125
T
j
=25
T
j
= − 40
Tj=125
Shenzhen SI Semiconductors Co., LTD. Product Specification
Si semiconductors 2004.10 3
TO-220 MECHANICAL DATA
UNIT mm
SYMBOL min nom max SYMBOL min nom max
A 3.5 4.8 e 2.54
B 2.4 F 1.1 1.4
B1 1.8 L 12.5 14.5
b 0.6 L1 3.5
b1 1.2 L2 6.3
c 0.4 P
D 16.5 Q 2.5 3.1
D1 5.9 6.9 Q1 2.0 2.8
E 10.7 Z 3.0
