Single Diode Schottky Barrier Diode D2FS4 40V 1.6A e/\@SMD Pansm Sl RE 0 At VF VIBE DC/DC IMI\-4 oR. FL, OA HEE oH K-39 JLRS Prrs BtKX RATINGS Small SMD mM Rating Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation Communication, Portable set M4 OUTLINE Package : 2F ayFe-7 / Cathode mark Goa \ | \ obit (em) Class Pia Type No. Weight 0.16g(Typ) Date code cD 3 Unit?mm FEI Tite ic Webtt 7 b tit CRUST Favs, lOve RAILS CB F So, For details of the outline dimensions, Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". Wax) OSI refer to our web site or @@xtRAZH Absolute Maximum Ratings (##Oe MS T=25) i 4H aby : th % Hye Item Symboll Conditions Type No. D2FS4 Unit (AF AE a 9 Storage Temperature Ts tg 55~ 150 Cc Tey bike . 9 Operation Junction Temperature Tj 150 Cc +f A SLE 7 Maximum Reverse Voltage Va 40 \ #0 ELtAM+ Ya: s8b AGO.5ms, duty 1/40 r Repetitive Peak Surge Reverse Voltage Vrrsm Pulse width 0.5ms, duty 1/40 45 V aage TLS TMK HJ ithe I 5OHz IESE, BULA A Ta=34 Op alumina substrate 16 4 Average Rectified Forward Current Oo 50Hz sine wave, Resistance load Ta=25 Ti y b MAR a~ <9 On glass-epoxy substrate 13 at A MTT i 50Hz Esk, JRA OR LAAT 2 eat AA, Ti = 125 60 A Peak Surge Forward Current M 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=125C #0 BLAM Py , AROS, T]=25T NT Repetitive Peak Surge Reverse Power | PRRSM | pulse width 10s, Tj 25C 330 W @BRi- MAH Electrical Characteristics (#EDe VHA TI=25C) ECT EE =e 280 ANSE 7 Forward Voltage Vr Ir=1.6A, Pulse measurement MAX 0.55 V eA r= 20 Ae ! Reverse Current Tr Vr=VRM, pulse measurement MAX 2.5 mA fr fit : IMU = 19 Seaie Capacitance Cj f= 1MHz, Va=10V TYP 150 pF . dei: FM djl Junction to lead MAX 24 SL TE THEME fl Thermal Resistance c Se ri REAL On alumina substrate MAX 90 C/W Bia Junction to ambient Ti) y } ARE MAX 120 On glass-epoxy substrate 52 (J532-1) www.shindengen.co.jp/product/semil Small SMD Single SBD D2FS4 Mist CHARACTERISTIC DIAGRAMS NETS Tl ete Forward Voltage * T7~ Th=157C(MAX} Ti=15C(TYP) T= 25C (MAX) t= T= 2c TYP) Forward Current lr (A) [Pulse measurement) Forward Voltage Vr (V) NERS 713A hie Forward Power Dissipation 14 So =-E= lo rp wo D=tp/T Tse Forward Power Dissipation Pr [W) Average Rectified Forward Current lo [A) PARTON iii Peak Surge Forward Current Capability Sime wave SS 'TOms. Wms cycle Non-repetitive T)=15C | 144 Peak Surge Forward Current Irsm (A) Number of Cycles [cycle] AR RHE Reverse Current Reverse Current In (mA) [Pulse measurement) Reverse Voltage Vr (V] MRA Reverse Power Dissipation Len ' 1 - Pl wert | 4 re tp/T Tp=18re! Reverse Power Dissipation Pr (W] Reverse Voltage Vr [V] HeaR Junction Capacitance Junction Capacitance Cj [pF Reverse Voltage Vr (V) F4lF4yvINT Ta-lo Derating Curve Ta-lo On alumina substrate Average Rectified Forward Current Io (A) Ambient Temperature Ta CC) F4lF4vINT Ta-lo Derating Curve Ta-lo 24 o_o < Nin} o ee (eens land Zen Conductor Layer Joye gzese=d==Eeh ce 0- TVp g ad Ve=2V z 22} D=p/T 5 = in 3 5 o m & 4 ao = << Ambient Temperature Ta (C) BORLA TAS Repetitive Surge Reverse Power Derating Curve Ver am 4 Tet ip) Persht=TkeX VRP PresM Derating [%] Operation Junction Temperature Tj (C) MOBLEAMY-VeRARE Repetitive Surge Reverse Power Capability VR 10fts) lip: Presa=IppxVap Ratio of Prrsm(tp)/ Perso (tp Pulse Width tp (ys) * Sine wave (i50Hz THE LT ET. * SOHz sine wave is used for measurements. + ERR OMTEL MAY Feo TB) ET. Typical SHANE SRL ET, * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 53