3-173
File Number 1355.5
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
MUR820, RURP820
8A, 200V Ultrafast Diodes
MUR820 and RURP820 are ultrafast diodes with soft
recovery characteristics (trr < 25ns). They have low forward
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA09223.
Symbol
Features
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . .<25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
MUR820 TO-220AC MUR820
RURP820 TO-220AC RURP820
NOTE: When ordering, use the entire part number.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
MUR820
RURP820 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(TC = 157oC) 8A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Square Wave, 20kHz) 16 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz) 100 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet January 2000
3-174
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 8A - - 0.975 V
IF = 8A, TC = 150oC - - 0.895 V
IRVR = 200V - - 100 µA
VR = 200V, TC = 150oC - - 500 µA
trr IF = 1A, dIF/dt = 200A/µs--25ns
IF = 8A, dIF/dt = 200A/µs--30ns
taIF = 8A, dIF/dt = 200A/µs - 13 - ns
tbIF = 8A, dIF/dt = 200A/µs-5-ns
QRR IF = 8A, dIF/dt = 200A/µs - 25 - nC
CJVR = 10V, IF = 0A - 60 - pF
RθJC --3
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
40
0.5
10
0 0.2 0.4 0.6 0.8 1
175oC25oC
100oC
1.2 1.4
VR, REVERSE VOLTAGE (V)
0 200100 150
100
0.001
0.01
0.1
50
10
175oC
100oC
25oC
IR, REVERSE CURRENT (µA)
MUR820, RURP820
3-175
FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,t
aAND tbCURVES vs FORWARD CURRENT
FIGURE 5. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
trr
IF, FORWARD CURRENT (A)
1
0
20
16
0.5 8
12
4
t, RECOVERY TIMES (ns)
ta
tb
8
4
TC = 25oC, dIF/dt = 200A/µs
5
10
15
tb
0.5
08
14
20 ta
trr
35
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
25
30 TC = 100oC, dIF/dt = 200A/µs
10
20
30
tb
0.5
0814
40
ta
trr
50
IF, FORWARD CURRENT (A)
t, RECOVERY TIMES (ns)
TC = 175oC, dIF/dt = 200A/µs
2
0140 145 155 175165
4
6
8
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
150
DC
SQ. WAVE
160 170
VR, REVERSE VOLTAGE (V)
75
0
125
0 50 100 150 200
100
50
CJ, JUNCTION CAPACITANCE (pF)
150
25
MUR820, RURP820
3-176
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
MUR820, RURP820
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MUR820, RURP820
