DMN2028UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25C 25m @ VGS = 4.5V 7.9A 29m @ VGS = 2.5V 7.2A 39m @ VGS = 1.8V 6.1A 95m @ VGS = 1.5V 4.0A This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications 0.6mm Profile - Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) Battery Management Application Power Management Functions DC-DC Converters D U-DFN2020-6 (Type F) G ESD PROTECTED Gate Protection Diode Pin Out Bottom View Bottom View Top View S Internal Schematic Ordering Information (Note 4) Part Number DMN2028UFDF-7 DMN2028UFDF-13 Notes: Reel Size (inches) 7 13 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2015 C Jan 1 NC 2016 D Feb 2 DMN2028UFDF Datasheet number: DS37937 Rev. 2 - 2 Mar 3 ND or NC = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) YM ND YM NEW PRODUCT 20V Features 2017 E Apr 4 May 5 2018 F Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D December 2015 (c) Diodes Incorporated DMN2028UFDF Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25C TA = +70C TA = +25C TA = +70C Steady State t<5s ID IDM Continuous Source-Drain Diode Current TA = +25C IS IAS EAS Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V A 9.4 7.5 40 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) NEW PRODUCT Value 20 8 7.9 6.3 A A 2 A 12 8 A mJ Thermal Characteristics Characteristic Symbol TA = +25C TA = +70C Steady state t<5s TA = +25C TA = +70C Steady state t<5s Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 0.66 0.42 186 135 2.03 1.31 64 43 18 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Unit W C/W W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1 10 V A A VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) 0.5 RDS(ON) -- |Yfs| VSD -- -- 1.0 25 29 39 95 -- 1.0 V Static Drain-Source On-Resistance -- 15 18 24 35 18 0.7 VDS = VGS, ID = 250A VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 4A VGS = 1.8V, ID = 4A VGS = 1.5V, ID = 4A VDS = 5V, ID = 12A VGS = 0V, IS = 5A Ciss Coss Crss Rg Qg Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- -- -- -- --- 907 98 38 194 9.8 18 1.5 1.8 56 87 632 239 143 136 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR m S V Test Condition pF VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 10V, ID = 6.5A ns VDS = 10V, VGS = 4.5V, RG = 6, RL = 10, ID = 1A ns nC IF = 4A, di/dt = 100A/s IF = 4A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2028UFDF Datasheet number: DS37937 Rev. 2 - 2 2 of 6 www.diodes.com December 2015 (c) Diodes Incorporated DMN2028UFDF 20 20.0 VGS=1.8V 18.0 VGS=2.5V VGS=4.0V 12.0 ID, DRAIN CURRENT (A) 14.0 VGS=1.5V 10.0 VGS=4.5V 8.0 6.0 14 12 10 8 6 4 TA=125 2.0 2 TA=150 0.0 0 VGS=1.2V 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.05 TA=85 TA=25 TA=-55 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3 0.1 VGS=1.5V 0.045 0.04 0.035 VGS=1.8V 0.03 0.025 VGS=2.5V 0.02 0.015 VGS=4.5V 0.01 0.005 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 16 VGS=3.5V 4.0 0 0.09 0.08 0.07 0.06 0.05 0.04 0.03 ID=4A 0.02 0.01 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1 0.03 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.8 VGS= 4.5V TA=125 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT ID, DRAIN CURRENT (A) 16.0 VDS= 5V 18 TA=150 0.025 TA=85 0.02 TA=25 0.015 TA=-55 0.01 0.005 1.6 VGS=2.5V, ID=5.5A 1.4 1.2 VGS=4.5V, ID=6.5A 1 0.8 0.6 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN2028UFDF Datasheet number: DS37937 Rev. 2 - 2 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature December 2015 (c) Diodes Incorporated 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.045 0.04 0.035 VGS=2.5V, ID=5.5A 0.03 0.025 0.02 VGS=4.5V, ID=6.5A 0.015 0.01 0.005 0 1.1 1 0.9 0.8 ID=1mA 0.7 0.6 ID=250A 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Temperature -25 10000 30 CT, JUNCTION CAPACITANCE (pF) f=1MHz 25 IS, SOURCE CURRENT (A) 20 15 VGS=0V, TA=85 VGS=0V, TA=125 10 VGS=0V, TA=150 5 VGS=0V, TA=25 Ciss 1000 Coss 100 Crss VGS=0V, TA=-55 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 100 8 PW =100s RDS(ON) Limited 10 4 ID, DRAIN CURRENT (A) 6 VGS (V) NEW PRODUCT DMN2028UFDF VDS=10V, ID=6.5A 2 PW =1ms 1 PW =10ms PW =100ms 0.1 0.01 0 0 2 4 6 10 12 14 Qg (nC) Figure 11. Gate Charge DMN2028UFDF Datasheet number: DS37937 Rev. 2 - 2 8 16 18 20 4 of 6 www.diodes.com TJ(MAX)=150 TA=25 PW =1s Single Pulse PW =10s DUT on 1*MRP board DC VGS=4.5V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 December 2015 (c) Diodes Incorporated DMN2028UFDF NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA (t)=r(t) * RJA RJA=186/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 z(4x) k e DMN2028UFDF Datasheet number: DS37937 Rev. 2 - 2 e2 L b 5 of 6 www.diodes.com U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm December 2015 (c) Diodes Incorporated DMN2028UFDF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. U-DFN2020-6 (Type F) X3 C Y X NEW PRODUCT Dimensions Y3 Y2 Y1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Y4 X1 Pin1 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com DMN2028UFDF Datasheet number: DS37937 Rev. 2 - 2 6 of 6 www.diodes.com December 2015 (c) Diodes Incorporated