{77 $GS:THOMSON TXN/TYN 058 (G) ---> MICROELECTRONICS TXN/TYN 1008 (G) SCR FEATURES ws HIGH SURGE CAPABILITY s HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500\(ams) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 058 ---> TYN/TXN 1008 Family of Silicon Controlled Rectifiers uses a high performance glass passivated chips technology. This general purpose Family of Silicon Controlled T0220AB Rectifiers is designed for power supplies up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current TXN | Tce=100C 8 A (180 conduction angle) TYN | Te=105C IT(AV) Average on-state current TXN | Tc=100C 5 A (180 conduction angle,single phase circuit) TYN | Tc=105C ITSM Non repetitive surge peak on-state current tp=8.3 ms 84 A (T) initial = 25C ) tp=10 ms 80 et It value tp=10 ms 32 A2s di/dt Critical rate of rise of on-state current 50 A/us Gate supply :Iq@ = 100 mA dic/dt = 1 As Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+125 C Tt Maximum lead temperature for soklering during 10 s at 4.5 mm 260 C from case Symbol Parameter TYN/TXN Unit 058 | 108 | 208 | 408 | 608 | 808 | 1008 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 | 1000 Vv VRRM Tj = 125C April 1995 Vw me 79292357 OO?bSLO 357 TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) THERMAL RESISTANCES Symbol Parameter Value Unit Ath (j-a) [Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC TXN 3.5 C TYN 2.5 GATE CHARACTERISTICS (maximum values) Pg (AV) = 1WPGM = 10W (p= 20 ns) IFGM = 4A (Ip =20 us) VAGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit BLANK G lot Vp=12V (DC) R_=330 Tj=25C | MAX 15 25 mA Vat Vp=12V (DC) R_=332 Tj=25C | MAX 15 v Vep Vp=VpRM RL=3.3kQ Tj= 110C | MIN 0.2 tgt Vp=VpRM_ IG =40mA Tj=25C TYP 2 Hs dig/dt = 0.5A/us i Ig= 1.2 IGT Tj=-25C | TYP 50 mA IH IT=100mMA gate open Tj=25C MAX 30 45 mA VIM ITM= 16A tp= 380us Tj=25C | MAX 1.8 Vv IDRM VpDRM_ Rated Tj=25C MAX 0.01 mA IRRM Varm Rated Te 110C > aVvidt Linear slope up to VD=67%VDRM Tj= 110C | MIN 200 500 Vins gate open tq Vp=67%VpRM irmM=16A VpR= 25V Tj= 110C | TYP 70 Hs ditmwdt=30 A/us dGVp/dt= 50V/us = &57 S68:THOMSON > MMGROBLESTROMES Me 79292397 0076561 22s TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Package V; TXN (Insulated) TYN (Uninsulated) Fig.1 : Maximum average power dissipation versus average on-state current (TXN). P(W) 8 ve 36 7 r ~ 6t i L. Le pe _| 5 LZ, Ka 180_| 4 L Li O = 120 3 v Q-= ao" ZL Ol 60 2 i KF | ee- 20 _ | ay) % 1 2 3 4 5 6 7 Fig.3 : Maximum average power dissipation versus average on-state current (TYN). / Vv 50 BLANK ~< G X X X X X x X X Xx X X X Xx mM | >< | >< [OK PK | OS [OK BK PK | >< >< PDK | OK ~< Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TXN). P (W) Tease (C) Rth = OC/W 5Cw 5CW 10C/W 100 105 110 115 = NY OO PF OA DD N @ 120 Tamb (C) 125 40 140 oc? 20 60 80 100 120 Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (TYN). P (Ww) P (W) Tease (C) 10 T T 10 -100 360 As c/w 5C/W LL ,5CWIL BM Vom be 8 NY \ j0CAW 105 6 Lom) 6 NN LX L110 7 Tt C= 180 N\ Z P Od = 120 NN 4 QL = 20 4 ~ N L415 y 5 Cd = 180 A\ 2 rf Q = 60 2 +120 = 30 om 7m 0 Tenn (9) 125 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 SGS-THOMSON 3 Oy a MSROE. BOT RO UCS mm 7929237 OO?bSbe LET TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.5 Average on-state current temperature (TXN). versuS case Itpavy(A) 0 2 \ Tcase (C) % 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.7 : Relative variation of thermal impedance versus pulse duration. 2th/Rth 1 Zth(j-c) 0.1 tp(s) 0.01 1E3 1E-2 1E-1 1E+0 1E+1 16+2 5E+2 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. lTsM (A) 100 TYTTqTTT T T TT Tj initial = 25C B0 60 H TK 40 MAT 20 Ht Number of cycles | 0 Po petiiii 4 1 10 460 10006 4/5 Ky SGS-THOMSON Fig.6 : Average on-state current versus case temperature (TYN). ITcavy(A) 10 oc , \ \ Tease (C) 5 410 20 30 40 50 60 70 80 90 100 110 120 130 Fig.6 : Relative variation of gate trigger current versus junction temperature. IgtIT) INT). Igttj-25C] = In T}=25C. 2.5 aK Igt 1.5-= Ct 3 poo hy 1 th TSS Lo 0.5 tT Tj (c) 0 -40-30-20-10 G6 10 20 90 40 60 60 7O BO 90 100110 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of !4t. Itsm (A). 't (As) Tj initial = 26C 100 ITsm 10 AMGROBLEGTRORICS we 7929237 0076563 OT TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Fig.11 : On-state characteristics (maximum values). | ty fA) 100 T) Inithal 25C 10 max Tj max Vto = 0.86V Rt 0.0460 Vim(V) 1 6 1 2 3 4 5 PACKAGE MECHANICAL DATA TO220AB Plastic REF. DIMENSIONS Mililimeters Inches A , Min. | Max. | Min. | Max. G i A 10.00 | 10.40 | 0.393 | 0.409 / | 7 - | B 15.20 | 15.90 | 0.598 | 0.625 LaF GA 4 [D + C__| 13.00 | 14.00 | 0.511 | 0.551 B D 6.20 | 6.60 | 0.244 | 0.259 F 3.50 | 4.20 | 0.137 | 0.165 oO a G 2.65 | 2.95 | 0.104 | 0.116 [| [| JF H 4.40 | 460 | 0.173 | 0.181 p c oft | 3.75 | 3.85 | 0.147 | 0.151 " J 1.23 | 1.32 | 0.048 | 0.051 d M L 0.49 ( 0.70 | 0.019 | 0.027 Ne M 2.40 | 2.72 | 0.094 0.107 pea N 480 | 5.40 | 0.188 | 0.212 O 1.14 | 1.70 | 0.044 | 0.066 P 0.61 | 0.88 | 0.024 | 0.034 Cooling method : C Recommended torque value :0.8 m.N. Marking : type number Maximum torque value : 1 m.N. Weight : 2.3 g Information furnished is believed to be accurate and reliable. However, SGS- THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Micro- slectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. MIAROE SCT RO PICS i577 SGS:THOMSON S/S Me 79293? OO?LSb4Y T3e