APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT(R) (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT(R) offers superior ruggedness and ultrafast switching speed. (R) TO -2 D 3 PA K 47 (S) C G E Features G * Low Saturation Voltage * Short Circuit Withstand Rated * Low Tail Current * High Frequency Switching to 50KHz * RoHS Compliant * Ultra Low Leakage Current C E Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 88 I C2 Continuous Collector Current @ TC = 100C 40 I CM Pulsed Collector Current 160 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125C 10 s Total Power Dissipation @ TC = 25C 500 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 4.5 6.0 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) 3.5 Collector-Emitter On Voltage (VGE = 15V, I C = 88A, Tj = 25C) 3.2 (VCE = VGE, I C = 2.0mA, Tj = 25C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 3 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) I GES 10 2 2 Unit Volts 1000 A 250 nA 100 Gate-Emitter Leakage Current (VGE = 20V) Microsemi Website - http://www.microsemi.com 052-6400 Rev A 3-2012 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate- Collector Charge td(on) Turn-On Delay Time tr td(off) tf Test Conditions Min Typ Capacitance 3980 VGE = 0V, VCE = 25V 320 f = 1MHz 80 Max V 210 VGE = 15V 25 VCE= 600V nC 90 IC = 40A Inductive Switching (25C) 22 VCC = 600V 25 Turn-Off Delay Time VGE = 15V 163 ns 40 IC = 40A Turn-On Switching Energy RG = 4.3 1375 3000 Eoff 6 Turn-Off Switching Energy TJ = +25C 906 1650 td(on Turn-On Delay Time 5 tr td(off) tf 4 Inductive Switching (125C) 22 Current Rise Time VCC = 600V 25 Turn-Off Delay Time VGE = 15V 185 Current Fall Time J ns 47 IC = 40A 5 Turn-On Switching Energy RG = 4.3 Eoff 6 Turn-Off Switching Energy TJ = +125C Eon2 Unit pF 7 Gate Charge Current Rise Time Current Fall Time Eon2 APT40GR120B_S 4 1916 3500 1186 2500 Typ Max J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min RJC Junction to Case Thermal Resistance .25 RJA Junction to Ambient Thermal Resistance 40 WT Package Weight Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw Unit C/W .22 oz 6.2 g 10 in-lbf 6.2 Nm 052-6400 Rev A 3-2012 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT40GR120B_S 80 300 V GE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 250 TJ= - 55C 60 TJ= 25C 50 13V 10V 15V = 15V 70 TJ= 125C 40 TJ= 150C 30 20 10 9V 200 150 8V 100 7V 50 6V 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) 4.5 4.0 IC = 40A 3.5 3.0 IC = 20A 2.5 2.0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 1.5 1.0 -50 -25 0 25 50 75 100 IC = 80A IC = 40A 3 IC = 20A 2 1 24 28 32 250s PULSE TEST<0.5 % DUTY CYCLE 150 100 50 0 TJ= 25C 0 TJ= -55C 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 4, Transfer Characteristics 1.10 1.05 1.00 0.95 0.90 0.85 6 0.75 -.50 -.25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 6, Threshold Voltage vs Junction Temperature 18 100 80 60 40 20 0 25 50 75 100 125 150 TC, Case Temperature (C) FIGURE 7, DC Collector Current vs Case Temperature I = 40A C T = 25C 16 J 14 VCE = 240V 12 VCE = 600V 10 8 VCE = 960V 3-2012 VGE, GATE-TO-EMITTER VOLTAGE (V) 120 IC, DC COLLECTOR CURRENT (A) 20 0.80 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 0 16 6 4 Rev A 0 12 200 125 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 4 8 TJ= 125C TJ, Junction Temperature (C) FIGURE 3, On State Voltage vs Junction Temperature 6 5 4 2 0 0 100 200 GATE CHARGE (nC) FIGURE 8, Gate charge 300 052-6400 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 250 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) IC = 80A VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5.0 0 IC, COLLECTOR CURRENT (A) 0 TYPICAL PERFORMANCE CURVES APT40GR120B_S 1.0E-8 C, CAPACITANCE (pF) Cies APT30DQ120 1.0E-9 V CE IC V CC Coes 1.0E-10 A Cres D.U.T. 1.0E-11 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 9, Capacitance vs Collector-To-Emitter Voltage 100 FIGURE 10, Inductive Switching Test Circuit 1000 Td(on) 10 Td(off) SWITCHING TIME (ns) SWITCHING TIME (ns) Tr 100 Tf VCE = 600V, VGE=15V, RG = 4.3 TJ = 25C or 125C 1 10 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Turn-On Time vs Collector Current 1000 Eoff VCE = 600V, VGE=15V, RG = 4.3 TJ = 25C TJ = 125C SWITCHING ENERGY LOSS (J) SWITCHING ENERGY LOSS (J) 50 60 70 80 90 Eoff 1000 700 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Energy Loss vs Collector Current VCE = 600V, VGE=15V, IC = 40A TJ = 125C 0 10 20 30 40 50 RG, GATE RESISTANCE () FIGURE 14, Energy Loss vs Gate Resistance 300 Eon2 1000 Eoff VCE = 600V, VGE=15V, RG = 4.3 IC = 40A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 15, Energy Losses vs Junction Temperature IC, COLLECTOR CURRENT (A) SWITCHING ENERGY LOSSES (J) 3-2012 Rev A 40 Eon2 10000 052-6400 30 5000 Eon2 100 20 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Turn-Off Time vs Collector Current 10000 100 VCE = 600V, VGE=15V, RG = 4.3 TJ = 25C TJ = 125C 100 10 100s 1ms 100ms 10ms 1 0.1 1 10 100 1000 2000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 16, Minimum Switching Safe Operating Area TYPICAL PERFORMANCE CURVES APT40GR120B_S 0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 Note: P DM ZJC, THERMAL IMPEDANCE (C/W) 0.30 0.3 t1 t2 0.05 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 0.1 SINGLE PULSE 0.05 0 10 -4 10 10-2 -3 0.1 1 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 17, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration TO-247 Package Outline D3PAK Package Outline e3 SAC: 100% Sn Plating 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Collector (Heat Sink) e3 SAC: 100% Sn Plating 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 Collector 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 1.01 (.040) 1.40 (.055) Gate Collector Emitter 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches ) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs. } 3.81 (.150) 4.06 (.160) (Base of Lead ) Heat Sink (Collector) and Leads are Plated Emitter Collector Gate Dimensions in Millimeters (Inches) 3-2012 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) Rev A 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 052-6400 2.87 (.113) 3.12 (.123) 4.50 (.177) Max.