052-6400 Rev A 3-2012
APT40GR120B_S
Symbol Parameter Ratings Unit
Vces Collector Emitter Voltage 1200
V
VGE Gate-Emitter Voltage ±30
IC1 Continuous Collector Current @ TC = 25°C 88
AIC2 Continuous Collector Current @ TC = 100°C 40
ICM Pulsed Collector Current 1160
SCWT Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 s
PDTotal Power Dissipation @ TC = 25°C 500 W
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TLMax. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
APT40GR120B
APT40GR120S
1200V, 40A, VCE(on)= 2.5V Typical
.
Microsemi Website - http://www.microsemi.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Symbol Parameter Min Typ Max Unit
V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA) 1200
Volts
VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 2.0mA, Tj = 25°C) 3 4.5 6.0
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) 2.5 3.2
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) 3.5
Collector-Emitter On Voltage (VGE = 15V, IC = 88A, Tj = 25°C) 3.2
ICES
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 210 1000 A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2100
IGES Gate-Emitter Leakage Current (VGE = ±20V) ±250 nA
Ultra Fast NPT - IGBT®
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior
ruggedness and ultrafast switching speed.
Features
• Low Saturation Voltage
• Low Tail Current
• RoHS Compliant
• Short Circuit Withstand Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
TO-247
GCE
D3PA K
G
C
E
(S)
(B)
APT40GR120B_S
052-6400 Rev A 3-2012
THERMAL AND MECHANICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol Characteristic Min Typ Max Unit
RJC Junction to Case Thermal Resistance .25 °C/W
RJA Junction to Ambient Thermal Resistance 40
WTPackage Weight .22 oz
6.2 g
Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 in-lbf
6.2 Nm
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol Parameter Test Conditions Min Typ Max Unit
Cies Input Capacitance Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
3980
pF
Coes Output Capacitance 320
Cres Reverse Transfer Capacitance 80
VGEP Gate to Emitter Plateau Voltage Gate Charge
VGE = 15V
VCE= 600V
IC = 40A
7V
Qg
3Total Gate Charge 210
nC
Qge Gate-Emitter Charge 25
Qgc Gate- Collector Charge 90
td(on) Turn-On Delay Time Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 40A
RG = 4.3 4
TJ = +25°C
22
ns
trCurrent Rise Time 25
td(off) Turn-Off Delay Time 163
tfCurrent Fall Time 40
Eon2
5Turn-On Switching Energy 1375 3000 J
Eoff
6Turn-Off Switching Energy 906 1650
td(on Turn-On Delay Time Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 40A
RG = 4.3 4
TJ = +125°C
22
ns
trCurrent Rise Time 25
td(off) Turn-Off Delay Time 185
tfCurrent Fall Time 47
Eon2
5 Turn-On Switching Energy 1916 3500 J
Eoff
6Turn-Off Switching Energy 1186 2500
052-6400 Rev A 3-2012
APT40GR120B_S
TYPICAL PERFORMANCE CURVES
0
20
40
60
80
100
120
0 25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50 -25 0 25 50 75 100 125
0
2
4
6
8
10
12
14
16
18
0 100 200 300
0
1
2
3
4
5
6
6 8 10 12 14 16
0
50
100
150
200
250
0 2 4 6 8 10 12 14
0
50
100
150
200
250
300
0 4 8 12 16 20 24 28 32
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5 6
250s PULSE
TEST<0.5 % DUTY
CYCLE
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 20A
IC = 40A
IC = 80A
IC = 40A
IC = 80A
10V
15V
IC = 40A
TJ = 25°C
VCE = 960V
VCE = 600V
VCE = 240V
TJ= 25°C
TJ= -55°C
VGE = 15V
TJ= - 55°C
TJ= 150°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
IC, COLLECTOR CURRENT (A)
TJ= 25°C
TJ= 125°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
IC, COLLECTOR CURRENT (A)
TJ= 125°C
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, Transfer Characteristics
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 8, Gate charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 3, On State Voltage vs Junction Temperature
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TC, Case Temperature (°C)
FIGURE 7, DC Collector Current vs Case Temperature
IC, DC COLLECTOR CURRENT (A)
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-.50 -.25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 6, Threshold Voltage vs Junction Temperature
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
6V
7V
IC = 20A
8V
9V
13V
APT40GR120B_S
052-6400 Rev A 3-2012
TYPICAL PERFORMANCE CURVES
1
10
100
20 30 40 50 60 70 80
10
100
1000
10 20 30 40 50 60 70 80 90
100
1000
10000
0 25 50 75 100 125
700
1000
5000
0 10 20 30 40 50
100
1000
10000
10 20 30 40 50 60 70 80
VCE = 600V, VGE=15V, RG = 4.3
TJ = 25°C or 125°C
Td(on)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Turn-On Time vs Collector Current
SWITCHING TIME (ns)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-Off Time vs Collector Current
SWITCHING TIME (ns)
RG, GATE RESISTANCE ()
FIGURE 14, Energy Loss vs Gate Resistance
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Energy Loss vs Collector Current
SWITCHING ENERGY LOSS (J)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
Tr
Td(off)
Tf
VCE = 600V, VGE=15V, RG = 4.3
TJ = 25°C
TJ = 125°C
VCE = 600V, VGE=15V, RG = 4.3
TJ = 25°C
TJ = 125°C
Eon2
Eoff
Eon2
Eoff
VCE = 600V, VGE=15V, IC = 40A
TJ = 125°C
SWITCHING ENERGY LOSS (J)
Eoff
Eon2
VCE = 600V, VGE=15V, RG = 4.3
IC = 40A
1.0E11
1.0E10
1.0E9
1.0E8
0 10 20 30 40 50
Coes
Cres
Cies
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 9, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
0.1
1
10
100
300
1 10 100 1000 2000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 16, Minimum Switching Safe Operating Area
IC, COLLECTOR CURRENT (A)
APT30DQ120
I
C
A
D.U.T.
V
CE
V
CC
FIGURE 10, Inductive Switching Test Circuit
1ms
100ms
100s
10ms
052-6400 Rev A 3-2012
APT40GR120B_S
TYPICAL PERFORMANCE CURVES
0
0.05
0.10
0.15
0.20
0.25
0.30
10-4 10-3 10-2 0.1 1 10
ZJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 17, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC +T
C
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches )
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs. }
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead )
Collector
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
e3 SAC: 100% Sn Plating
TO-247 Package Outline D3PAK Package Outline
e3 SAC: 100% Sn Plating
