IRANSYS 2N7000 FLECTRONICS LIMITED 3 DRAIN a FET Transistor ie 2 t N-Channel Enhancement GATE 1 SOURCE MAXIMUM RATINGS : : 1 Rating Symbol Value Unit 2 3 Drain Source Voltage Voss 60 Vde DrainGate Voltage (Rgg = 1.0 MQ) VDGR 60 Vde TO-92 (TO-226AA) GateSource Voltage Continuous Ves +20 Vde Non-repetitive (tp < 50 us) VGSM +40 Vpk Drain Current mAdc Continuous ID 200 Pulsed IDM 500 Total Power Dissipation @ Tc = 25C Pp 350 mW Derate above 25C 2.8 mw Operating and Storage Temperature Range Ty; Tstg 55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient ReJA 357 CW Maximum Lead Temperature for TL 300 C Soldering Purposes, 1/16 from case for 10 seconds ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 _ Vde (Vq@s = 9, Ip = 10 pAdc) Zero Gate Voltage Drain Current IDSs (Vps = 48 Vdc, Ves = 0) _ 1.0 pAdc (Vps = 48 Vdc, Vas = 0, Ty = 125C) _ 1.0 mAdc GateBody Leakage Current, Forward IGSSF _ 10 nAdc (V@sF = 15 Vdc, Vps = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage VGSith) 0.8 3.0 Vde (Vps = Vas, Ip = 1.0 mAdc) Static Drain-Source On-Resistance DS(on) Ohm (Vqags = 10 Vde, Ip = 0.5 Adc) _ 5.0 (V@qs = 4.5 Vde, Ip = 75 mAdc) 6.0 Drain-Source OnVoltage VDS\(on) Vde (Vqags = 10 Vde, Ip = 0.5 Adc) _ 25 (Vas = 4.5 Vde, Ip = 75 mAdc) _ 0.45 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 2N7000 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) (continued) On-State Drain Current ld(on) 75 _ mAdc (Vqs = 4.5 Vde, Vpg = 10 Vdc) Forward Transconductance Ofs 100 _ tumhos (Vps = 10 Vde, Ip = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Ciss _ 60 pF 7 (Vps = 25 V, Vag = 0, | Output Capacitance f= 1,0 MHz) Coss 25 Reverse Transfer Capacitance Crsg _ 5.0 SWITCHING CHARACTERISTICS(1) TurnOn Delay Time (Vpp = 15 V, Ip = 500 mA, ton 10 ns Turn-Off Delay Time Rg = 25 Q RL = 30 2, Vgen = 10 V) toft 10 1. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 2.0 18 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Ip, DRAIN CURRENT (AMPS) Ip, DRAIN CURRENT (AMPS) 0 0 10 20 30 40 50 60 70 80 90 10 0 10 20 30 40 50 60 70 80 90 10 Vps, DRAIN SOURCE VOLTAGE (VOLTS) Vag, GATE SOURCE VOLTAGE (VOLTS) Figure 1. Ohmic Region Figure 2. Transfer Characteristics Lu 2 G 12 % = 1.05 cr V@s=10V = 14 a Ip = 200 mA 9 S = 1.10 a ze = 1.0 a B= S 0.95 Zo Qa So a oO wt 0.85 E = = F- 08 2 e S = 0.75 Zo. 2 07 = -60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140 T, TEMPERATURE (C) T, TEMPERATURE (C) Figure 3. Temperature versus Static Figure 4. Temperature versus Gate Drain-Source On-Resistance Threshold Voltage PACKAGE DIMENSIONS 2N7000 NOTES: A ~< -B 1. DIMENSIONING AND TOLERANCING PER ANSI >| Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R | IS UNCONTROLLED. P SEATING t 4, LEAD DIMENSION IS UNCONTROLLED IN P AND PLANE oe BEYOND DIMENSION K MINIMUM. ery | i G > Q_. f 1 7 Z INCHES MILLIMETERS H< Vv < -C _) SECTION X-X a| a be s N ~ STYLE 22: CASE 029-11 PIN1. SOURCE (TO-226AA) 3 DRAN ISSUE AJ