AO4630 30V Complementary MOSFET General Description Product Summary AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. N-Channel VDS= 30V P-Channel -30V ID= 7A (VGS=10V) -5A (VGS=-10V) RDS(ON) RDS(ON) < 23m (VGS=10V) < 48m (VGS=-10V) < 28m (VGS=4.5V) < 57m (VGS=-4.5V) < 36m (VGS=2.5V) < 78m (VGS=-2.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S1 G1 S2 G2 1 2 3 4 D1 D1 D2 D2 8 7 6 5 G1 G2 S1 N-channel Pin1 S2 P-channel Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Max N-channel Parameter Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current ID TA=70C C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10s TA=25C Power Dissipation B C Junction and Storage Temperature Range Rev.1.0: Nov 2015 Units V 12 12 V 7 -5 -4 30 -25 IAS 14 18 A EAS 10 16 mJ VSPIKE 36 -36 V 2 Steady-State Steady-State W 1.3 TJ, TSTG Symbol t 10s A 5.6 IDM PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Max P-channel -30 RJA RJL -55 to 150 Typ 48 74 32 www.aosmd.com C Max 62.5 90 40 Units C/W C/W C/W Page 1 of 9 AO4630 N-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=12V Gate Threshold Voltage VDS=VGS, ID=250A V TJ=55C 100 nA 1.05 1.45 V 17.8 23 28 40 VGS=4.5V, ID=6A 19 28 m VGS=2.5V, ID=5A 24 36 m 1 V 2.5 A 0.65 TJ=125C gFS Forward Transconductance VDS=5V, ID=7A 35 Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 VSD Coss Units 1 VGS=10V, ID=7A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz m S 670 pF 75 pF 45 pF 3 4.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 20 nC Qg(4.5V) Total Gate Charge 6 12 Qgs Gate Source Charge Qgd Gate Drain Charge f=1MHz VGS=10V, VDS=15V, ID=7A 1.5 nC 1.8 nC 3 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=7A, di/dt=500A/s Qrr Body Diode Reverse Recovery Charge IF=7A, di/dt=500A/s 7.5 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=2.2, RGEN=3 nC 1.3 2.5 ns 25 ns 4 ns 6.5 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: Nov 2015 www.aosmd.com Page 2 of 9 AO4630 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 15 10V VDS=5V 3V 32 12 4.5V 2.5V 9 ID (A) ID (A) 24 16 6 VGS=2V 8 125C 25C 3 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 30 1.8 26 VGS=2.5V 22 VGS=4.5V Normalized On-Resistance RDS(ON) (m ) 0.5 18 VGS=10V 14 1.6 VGS=4.5V ID=6A 1.4 VGS=10V ID=7A 1.2 VGS=2.5V ID=5A 1 0.8 10 0 4 8 12 16 0 20 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 1.0E+01 ID=7A 1.0E+00 125C 1.0E-01 34 125C IS (A) RDS(ON) (m ) 42 1.0E-02 26 25C 1.0E-03 25C 18 1.0E-04 10 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: Nov 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 9 AO4630 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=15V ID=7A 8 800 Capacitance (pF) VGS (Volts) Ciss 6 4 600 400 2 Crss 200 0 Coss 0 0 3 6 9 12 15 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 1000 TJ(Max)=150C TA=25C 100s 1.0 1ms 10ms Power (W) 10s RDS(ON) limited 10.0 ID (Amps) 10 10 DC 0.1 TJ(Max)=150C TA=25C 0.0 0.01 100 10s 0.1 1 10 VDS (Volts) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=90C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: Nov 2015 www.aosmd.com Page 4 of 9 AO4630 Figure A: Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: Nov 2015 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO4630 P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=12V Gate Threshold Voltage VDS=VGS, ID=-250A TJ=55C 100 nA -0.9 -1.3 V 40 48 48 60 VGS=-4.5V, ID=-3.5A 45 57 m VGS=-2.5V, ID=-2.5A 60 78 m -0.5 TJ=125C gFS Forward Transconductance VDS=-5V, ID=-5A 18 Diode Forward Voltage IS=-1A, VGS=0V -0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A -5 VSD Coss Units -1 VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz m S -1 V -2.5 A 700 pF 80 pF 60 pF 8 12 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 25 nC Qg(4.5V) Total Gate Charge 7 15 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-5A, di/dt=500A/s Qrr Body Diode Reverse Recovery Charge IF=-5A, di/dt=500A/s 40 Body Diode Reverse Recovery Time f=1MHz VGS=-10V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V, RL=3, RGEN=3 4 nC 1.5 nC 2.5 nC 6.5 ns 3.5 ns 41 ns 9 ns 15 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: Nov 2015 www.aosmd.com Page 6 of 9 AO4630 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 -10V VDS=-5V -4.5V -3V 15 15 -ID (A) -ID (A) -2.5V 10 5 10 125C 5 VGS=-2V 25C 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 -VGS (Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance 1.8 70 RDS(ON) (m ) 0.5 VGS=-2.5V 60 VGS=-4.5V 50 40 VGS=-10V ID=-5A 1.6 1.4 VGS=-2.5V ID=-2.5A 1.2 VGS=-4.5V ID=-3.5A 1 VGS=-10V 0.8 30 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 1.0E+02 ID=-5A 1.0E+01 100 80 -IS (A) RDS(ON) (m ) 1.0E+00 125C 125C 1.0E-01 25C 1.0E-02 60 1.0E-03 40 1.0E-04 25C 20 1.0E-05 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: Nov 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 Page 7 of 9 AO4630 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=-15V ID=-5A 800 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 600 400 2 200 0 Coss Crss 0 0 3 6 9 12 15 0 6 Qg (nC) Figure 7: Gate-Charge Characteristics 12 18 1000 TJ(Max)=150C TA=25C 10s RDS(ON) limited 100s 1.0 DC 0.1 10 10s TJ(Max)=150C TA=25C 0.0 0.01 1ms 10ms 100 Power (W) -ID (Amps) 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 24 0.1 1 10 -VDS (Volts) VGS<or equal to -2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=90C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: Nov 2015 www.aosmd.com Page 8 of 9 AO4630 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd + DUT Qgs Vds Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off t on td(on) Vgs - DUT Vgs VDC tf td(off) tr 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: Nov 2015 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9