AO4630
General Description Product Summary
N-Channel
P-Channel
V
DS
= 30V -30V
I
D
= 7A (V
GS
=10V) -5A (V
GS
=-10V)
R
DS(ON)
R
DS(ON)
< 23mΩ (V
GS
=10V) < 48mΩ (V
GS
=-10V)
< 28mΩ (V
GS
=4.5V) < 57mΩ (V
GS
=-4.5V)
< 36mΩ (V
GS
=2.5V) < 78mΩ (V
GS
=-2.5V)
100% UIS Tested 100% UIS Tested
100% R
g
Tested 100% R
g
Tested
30V Complementary MOSFET
AO4630 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. This
complementary N and P channel MOSFET
configuration is ideal for low Input Voltage inverter
applications.
AO4630
SO-8
Tape & Reel
3000
Orderable Part Number Package Type Form Minimum Order Quantity
SOIC-8
Top View Bottom View
Pin1
G2
S2
G1
D2
D2
D1
D1
2
4 5
1
3
8
6
7
Top View
G2
D2
S2
G1
D1
S1
N
-
channel
P
-
channel
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.1mH
C
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State R
θJL
5.6 -4
30 -25
Max N-channel Max P-channel
30 -30
±12
AO4630
SO-8
Tape & Reel
3000
Avalanche Current
C
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
Units
Gate-Source Voltage ±12
Parameter
Drain-Source Voltage
14 18
Pulsed Drain Current
C
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
Power Dissipation
B
1.3
T
A
=70°C
10µs
P
D
2
T
A
=25°C 36 -36
W
I
D
V
A
mJ
7 -5 A
10 16
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
32 90
40
Maximum Junction-to-Ambient
A
°C/W
R
θJA
48
74 62.5
°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
Thermal Characteristics
Parameter Max
Rev.1.0: Nov 2015
www.aosmd.com Page 1 of 9
AO4630
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 0.65 1.05 1.45 V
17.8 23
T
J
=125°C 28 40
19 28 mΩ
24 36 mΩ
g
FS
35 S
V
SD
0.7 1 V
I
S
2.5 A
C
iss
670 pF
C
oss
75 pF
C
rss
45 pF
R
g
1.5 3 4.5 Ω
Q
g
(10V)
13 20 nC
Q
g
(4.5V)
6 12 nC
Q
gs
1.3 nC
Q
gd
1.8 nC
t
D(on)
3 ns
t
r
2.5 ns
t
D(off)
25
ns
mΩ
V
GS
=10V, V
DS
=15V, I
D
=7A
Total Gate Charge
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
V
DS
=0V, V
GS
=±12V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2Ω,
R
GEN
=3
Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=2.5V, I
D
=5A
Turn-On Rise Time
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=7A
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=6A
t
D(off)
25
ns
t
f
4 ns
t
rr
6.5 ns
Q
rr
7.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=7A, di/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
R
GEN
=3
Ω
I
F
=7A, di/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.1.0: Nov 2015 www.aosmd.com Page 2 of 9
AO4630
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 0.5 1 1.5 2 2.5 3
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
10
14
18
22
26
30
0 4 8 12 16 20
RDS(ON) (mΩ
Ω
Ω
Ω)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=10V
ID=7A
VGS=4.5V
ID=6A
VGS=2.5V
ID=5A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
8
16
24
32
40
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=2V
2.5V
4.5V
10V
3V
VGS=2.5V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
10
18
26
34
42
50
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=7A
25°C
125°C
Rev.1.0: Nov 2015 www.aosmd.com Page 3 of 9
AO4630
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
V
> or equal to 2.5V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
10s
1
10
100
1000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
-
0
2
4
6
8
10
0 3 6 9 12 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=7A
TJ(Max)=150°C
TA=25°C
V
GS
> or equal to 2.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction
-
-
Ambient (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
Rev.1.0: Nov 2015 www.aosmd.com Page 4 of 9
AO4630
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
ton
td(off) tf
toff
LBV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds DSS
2
E = 1/2 LIAR
AR
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs -
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
trr
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.1.0: Nov 2015 www.aosmd.com Page 5 of 9
AO4630
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -0.5 -0.9 -1.3 V
40 48
T
J
=125°C 48 60
45 57 mΩ
60 78 mΩ
g
FS
18 S
V
SD
-0.7 -1 V
I
S
-2.5 A
C
iss
700 pF
C
oss
80 pF
C
rss
60 pF
R
g
4 8 12 Ω
Q
g
(10V)
14 25 nC
Q
g
(4.5V)
7 15 nC
Q
gs
1.5 nC
Q
gd
2.5 nC
t
D(on)
6.5 ns
t
r
3.5 ns
t
D(off)
41
ns
I
D
=-250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
V
DS
=0V, V
GS
=±12V
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
V
GS
=0V, V
DS
=-15V, f=1MHz
V
DS
=V
GS,
I
D
=-250µA
Output Capacitance
Forward Transconductance
mΩ
V
GS
=-4.5V, I
D
=-3.5A
Reverse Transfer Capacitance
I
S
=-1A, V
GS
=0V
V
DS
=-5V, I
D
=-5A
V
GS
=-10V, I
D
=-5A
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=-2.5V, I
D
=-2.5A
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-5A
Total Gate Charge
SWITCHING PARAMETERS
Total Gate Charge
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=3Ω,
R
GEN
=3
Ω
Turn-On Rise Time
Turn-On DelayTime
t
D(off)
41
ns
t
f
9 ns
t
rr
15 ns
Q
rr
40 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=-5A, di/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
R
GEN
=3
Ω
I
F
=-5A, di/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev.1.0: Nov 2015 www.aosmd.com Page 6 of 9
AO4630
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID (A)
-VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
30
40
50
60
70
80
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=-4.5V
ID=-3.5A
VGS=-2.5V
ID=-2.5A
25°C
125°C
VDS=-5V
VGS=-2.5V
VGS=-10V
0
5
10
15
20
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=-2V
-
3V
-2.5V
-10V -4.5V
VGS=-4.5V
VGS=-10V
ID=-5A
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
20
40
60
80
100
120
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=-5A
25°C
125°C
Rev.1.0: Nov 2015 www.aosmd.com Page 7 of 9
AO4630
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
V
<or equal to
-
2.5
V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10ms
10s
1
10
100
1000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
0
2
4
6
8
10
0 3 6 9 12 15
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 6 12 18 24 30
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-5A
TJ(Max)=150°C
TA=25°C
V
GS
<or equal to
-
2.5
V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
Rev.1.0: Nov 2015 www.aosmd.com Page 8 of 9
AO4630
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L2
E = 1/2 LIAR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
-
+
BVDSS
IAR
Ig
Vgs -
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F
-I
-I
Rev.1.0: Nov 2015 www.aosmd.com Page 9 of 9