CMPSH-3E ey CMPSH-3AE entrdai CMPSH-3CE CMPSH-3SE Semiconductor Corp. ENHANCED SPECIFICATION : SURFACE MOUNT DESCRIPTION: SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an <E> SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: @ |e from 100mA max to 200mA max. SPECIFICATION > @ BVp from 30V min to 40V min. SOT-23 CASE # Ve from 1.0V max to 0.8V max. CMPSH-3E: SINGLE MARKING CODE: D95E CMPSH-3AE: DUAL, COMMON ANODE MARKING CODE: DB1E CMPSH-3CE: DUAL, COMMON CATHODE MARKING CODE: DB2E CMPSH-3SE: DUAL, IN SERIES MARKING CODE: DASE MAXIMUM RATINGS: (T,=25C) SYMBOL UNITS # Peak Repetitive Reverse Voltage VRRM 40 V Continuous Forward Current Ir 200 mA Peak Repetitive Forward Voltage lERM 350 mA Forward Surge Current, tp=10ms lFSM 750 mA Power Dissipation Pp 350 mW Operating and Storage Junction Temperature Ty: Tstg -65 to +150 2G Thermal Resistance Osa 357 C/W ELECTRICAL CHARACTERISTICS PER DIODE: (T,=25C unless otherwise noted) SYMBOL __ TEST CONDITIONS MIN TYP MAX UNITS @BVea IR=100pA 40 50 Vv Ve Ip=2.0mA 0.29 0.33 Vv VE Ip=15mA 0.37 0.42 Vv VE Ip=100mA 0.61 0.80 v A Ip=200mA 0.65 1.0 v IR VR=25v 90 500 nA IR VR=25V, Ta=100C 25 100 A Cr VR=1.0V, f=1 MHz 7.0 pF ey Ie=IQ=10mA, |,-=1.0mA, Ry =1000 5.0 ns @ Enhanced specification. # Additional Enhanced specification. For Typical Electrical Characteristic Data for this device, R2 (6-August 2003) please see Process CPD48 on page 881. 366 CMPSH-3E Central Sure a CMPSH-3CE Semiconductor Corp. CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE ar -o- 2 c = Lo eo SOT-23 (REV: R3) -) [G27] [EH] [ea Ey | u yy LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE 1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2 2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1 3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2 MARKING MARKING MARKING MARKING CODE: D95E CODE: DB1E CODE: DB2E CODE: DASE R2 (6-August 2003) 367