ISKRA ELECTRONICS INC Silicijeve planarne signalne diode Silicon planar signal diodes 2eSE D me 4883477 OOOO8I) 1 MM 7203-09 Tr 67-19 oo deav Ur pri/at Ir ln Cc oF m 2 pri/at f: . Sl./ amd = pri/at pri/at) 1MHz fF: 7 4S Tip/'type 25C |Dam=25C| 25C Un [Ua=OV| "2", Fi. Psy) =] 4ma) | (VY) (mA) | (9A) (Y) | PF) BA&11 | 1N4148 400 - - 450110 10] 25 20/ 4 BA513 | 1N4448 100 ~ :[ 150710 100] 25 20| 4 BA517 | 1N4150 | 702A] 200/10 200] 100 50] 25 BA518 | 1N4151 F-755yA| 150 ]}10 50] 50 50| 2 BA519 | 1N4152 [405A] 150 ]088 20| 50 30] 2 BA520 | 1N4153 755yA] 180 |088 20/ 50 50] 2 BA521 | 1N4154 -. 255A] 150 }10 30/100 25] 4 BA523 | 1N4444 | 705A} 200 }1.0 100} 50 60] 2 1 BA531 | 1N4727 | 3054A{450 {085 10/100 20] 4 BA533 | 1N4864 [425 7200 ]1.1 100/100 80] 13 BA543 | BAY17 f.18) =} 200710 100/100 12] 145 BA544 |BAVi8 F 60. {200/10 100] 100 50] 15 BA545 | BAV19 [320 24 200 ]10 100/100 100 | 15 BA546 | BAY20 (480. 1 200 ]1.0 100] 100 150] 15 BA647 | BAY80 [450 -~] 200 11.0 100} 100 120/ 6 * pri/at 100C : ' lr=10 mA, UR=6V, ign = 1 mA, R,=1000 2 {p= 10 mA, lp=10 MA, ign=1 mA 3 fe = 30 mA, Ip =80 MA, ign=3 mA, RL =100Q Silicijeve preklopne didode Silicon switching diodes Pod LS pri/at MH Po. - 4 > pri/at , a oe EMH | TOOMHz | Fig, Tip/Type . Unrna Ar Dato Ur pri/at le =3V) lr=10mA PM) | (ma) (co) | W) (mA) FF) (9) BA24GA f-20 | ap | ~S0d0/t0 | <4 00 Fas 05 1 Sg Sane | 40 do/to Eo on BA 182A ERO |: 100 +400 <1,2 100 p25 0,7 2 Dioda s spremenljivo kapacitivnostjo Capacitance diodes Tip/Type | Unrm| G, pri/at Up (4 MHz) C, (Uns) Uni | Uno bts | SI/ | Fig. W) [| @F) V) Cr (Una) wv) | w) Fay | "9 BB105A f- ~ 42,3do/to28| 25 4 do/to 5 3 | 25 Sop BB105B = 30] 2 do/to23] 25 4,5 do/to 6 3 | 25 08 | 2 BB105G f= | 1,8do/to28) 25 4 do/to 6 3 | 26 {4,2 2 4- in 254min___/4,05maks osumit | 1 ks SL./Fig. 1 bO-35 S1./Fig. 2