DATA SH EET
Product specification
Supersedes data of 1999 Nov 02 2000 Mar 09
DISCRETE SEMICONDUCTORS
BFR93AT
NPN 5 GHz wideband transistor
M3D173
2000 Mar 09 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
FEATURES
•High power gain
•Gold metallization ensures
excellent reliability
•SOT416 (SC-75) package.
APPLICATIONS
Designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
inaplasticSOT416(SC-75)package.
The BFR93AT uses the same die as
the SOT23 version: BFR93A.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
f
page
12
3
MBK090
Top view
Marking code: R2.
Fig.1 SOT416.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−15 V
VCEO collector-emitter voltage open base −−12 V
ICcollector current (DC) −−35 mA
Ptot total power dissipation Ts≤75 °C; note 1 −−150 mW
hFE DC current gain IC= 30 mA; VCE =5V 40 90 −
C
re feedback capacitance IC= 0; VCE = 5 V; f = 1 MHz;
Tamb =25°C−0.6 −pF
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4 5 −GHz
GUM maximum unilateral power gain IC= 30 mA; VCE =8V; T
amb =25°C;
f = 1 GHz −13 −dB
f = 2 GHz −8−dB
F noise figure IC= 5 mA; VCE = 8 V; f = 1 GHz;
Γs=Γopt
−1.5 −dB
Tjjunction temperature −−150 °C
2000 Mar 09 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITION MIN. MAX. UNIT
VCBO collector-base voltage open emitter −15 V
VCEO collector-emitter voltage open base −12 V
VEBO emitter-base voltage open collector −2V
I
CDC collector current −35 mA
Ptot total power dissipation Ts≤75 °C; see Fig.2 −150 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 500 K/W
0 50 100 200
100
0
MGU068
150
Ptot
(mW)
Ts (°C)
150
200
50
Fig.2 Power derating curve.
2000 Mar 09 4
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
CHARACTERISTICS
Tj=25°C; unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =5V −−50 nA
hFE DC current gain IC= 30 mA; VCE =5V 40 90 −
C
ccollector capacitance IE=i
e= 0; VCB =5V; f=1MHz −0.7 −pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V; f = 1 MHz −2.3 −pF
Cre feedback capacitance IC= 0; VCE = 5 V; f = 1 MHz −0.6 −pF
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4 5 −GHz
GUM maximum unilateral power
gain IC= 30 mA; VCE =8V; T
amb =25°C;
note 1;
f = 1 GHz −13 −dB
f = 2 GHz −8−dB
F noise figure IC= 5 mA; VCE =8V;Γ
s=Γ
opt;
f = 1 GHz −1.5 −dB
f = 2 GHz −2.1 −dB
GUM 10
S
21 2
1
S
11 2
–()1
S
22 2
–()
----------------------------------------------------------- dBlog=
2000 Mar 09 5
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
handbook, halfpage
0102030
120
0
40
80
MCD087
hFE
I (mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =5V.
0
1
0
MBG203
48
C
re
(pF)
0.8
0.6
0.4
0.2
12 16
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IC= 0; f = 1 MHz.
4
2
0
MBG204
6
102
101
fT
(GHz)
IC (mA)
Fig.5 Transition frequency as a function of
collector current; typical values.
VCE = 5 V; f = 500 MHz; Tamb =25°C.
2000 Mar 09 6
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
0
30
20
10
010 20
MBG202
30
GUM
MSG
IC (mA)
gain
(dB)
Fig.6 Gain as a function of collector current;
typical values.
VCE = 8 V; f = 500 MHz.
0
30
20
10
010 20
MBG201
30
MSG
GUM
gain
(dB)
IC (mA)
Fig.7 Gain as a function of collector current;
typical values.
VCE = 8 V; f = 1 GHz.
handbook, halfpage
50
010
MBG200
102103104
10
20
30
40
f (MHz)
GUM
Gmax
MSG
gain
(dB)
Fig.8 Gain as a function of frequency; typical
values.
VCE = 8 V; IC=10mA.
handbook, halfpage
50
010
MBG207
102103104
10
20
30
40
f (MHz)
GUM
Gmax
MSG
gain
(dB)
Fig.9 Gain as a function of frequency; typical
values.
VCE = 8 V; IC=30mA.
2000 Mar 09 7
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
handbook, halfpage
2
4
2
010
MGC901
101
6
1 GHz
500 MHz
f = 2 GHz
F
(dB)
IC (mA)
Fig.10 Minimum noise figure as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
4
2
0
MGC900
6
f (MHz) 104
103
102
IC = 30 mA
10 mA
5 mA
F
(dB)
Fig.11 Minimum noise figure as a function of
collector current; typical values.
VCE =8V.
handbook, full pagewidth
MGC879
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o0.5
0
0.2
0.5
1
2
5
2
F = 4 dB
F = 3 dB
F = 2 dB
opt
Γ
F = 1.4 dB
min
0.2
2
1 5
5
o
180 0.2 0.5
1
Fig.12 Common emitter noise figure circles; typical values.
f = 500 MHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.
2000 Mar 09 8
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
handbook, full pagewidth
MGC880
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.50.2
0.2
F = 2.5 dB
F = 3 dB
F = 4 dB
0.2
opt
Γ
F = 2 dB
min
0G = 13 dB
ms
Γ
G = 13.8 dB
max
G = 12 dB
G = 11 dB
Fig.13 Common emitter noise figure circles; typical values.
f = 1 GHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.
handbook, full pagewidth
MGC881
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.2
0.2 (4)
(3)
(2)
(5)
(6)
(7) (8)
(1)
0.2
00.5
Fig.14 Common emitter noise figure circles; typical values.
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) Γms;G
max = 8.1 dB.
(6) G = 7 dB.
(7) G = 6 dB.
(8) G = 5 dB.
f = 2 GHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.
2000 Mar 09 9
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
handbook, full pagewidth
MGC878
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180 0.2 1
00.5
40 MHz
3 GHz
Fig.15 Common emitter input reflection coefficient (S11); typical values.
VCE = 8 V; IC= 30 mA; Zo=50Ω.
handbook, full pagewidth
MGC898
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz 3 GHz
VCE = 8 V; IC=30mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
2000 Mar 09 10
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
handbook, full pagewidth
MGC899
0o
90o
135o
180o
90o
0.5 0.4 0.3 0.2 0.1
45o
135o45o
40 MHz
3 GHz
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
VCE = 8 V; IC=30mA.
handbook, full pagewidth
MGC877
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
Fig.18 Common emitter output reflection coefficient (S22); typical values.
VCE = 8 V; IC= 30 mA; Zo=50Ω.
2000 Mar 09 11
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
PACKAGE OUTLINE
UNIT A1
max bpcDEe
1H
EL
pQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT416
97-02-28
2000 Mar 09 12
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2000 Mar 09 13
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
NOTES
2000 Mar 09 14
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
NOTES
2000 Mar 09 15
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AT
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 69
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Printed in The Netherlands 603508/02/pp16 Date of release: 2000 Mar 09 Document order number: 9397 750 06718
