VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES * NPT warp 2 speed IGBT technology with positive temperature coefficient * Square RBSOA * Low VCE(on) * FRED Pt(R) hyperfast rectifier * Fully isolated package SOT-227 * Very low internal inductance ( 5 nH typical) * Industry standard outline * UL approved file E78996 * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS PRODUCT SUMMARY * Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating VCES 600 V IC DC 70 A at 88 C VCE(on) typical at 70 A, 25 C 2.23 V IF DC 70 A at 86 C Package SOT-227 Circuit Chopper high side switch * Easy to assemble and parallel * Direct mounting to heatsink * Plug-in compatible with other SOT-227 packages * Higher switching frequency up to 150 kHz * Lower conduction losses and switching losses * Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 C 111 TC = 80 C 76 Pulsed collector current ICM 120 Clamped inductive load current ILM 120 Diode continuous forward current IF TC = 25 C TC = 80 C 113 75 Peak diode forward current IFM 200 Gate to emitter voltage VGE 20 Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage Revision: 02-Aug-13 PD VISOL A TC = 25 C 447 TC = 80 C 250 TC = 25 C 236 TC = 80 C 132 Any terminal to case, t = 1 min 2500 V W V Document Number: 93103 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70NA60UF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 600 - - VGE = 15 V, IC = 35 A - 1.69 1.88 VGE = 15 V, IC = 70 A - 2.23 2.44 VGE = 15 V, IC = 35 A, TJ = 125 C - 2.07 2.31 VGE = 15 V, IC = 70 A, TJ = 125 C - 2.89 3.21 VCE = VGE, IC = 500 A 3 3.9 5 VCE = VGE, IC = 1 mA (25 C to 125 C) - -9 - VGE = 0 V, VCE = 600 V - 1 100 A VGE = 0 V, VCE = 600 V, TJ = 125 C - 0.07 2.0 mA V IR = 1 mA 600 - - IC = 35 A, VGE = 0 V - 1.80 2.33 IC = 70 A, VGE = 0 V - 2.13 2.71 IC = 35 A, VGE = 0 V, TJ = 125 C - 1.35 1.81 IC = 70 A, VGE = 0 V, TJ = 125 C - 1.70 2.32 UNITS V mV/C V VR = VR rated - 0.1 50 A TJ = 125 C, VR = VR rated - 0.02 3 mA VGE = 20 V - - 200 nA UNITS SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon MAX. 320 - - 42 - Qgc - 110 - Eon IC = 70 A, VCC = 360 V, VGE = 15 V, Rg = 5 L = 500 H, TJ = 25 C - 1.15 - - 1.16 - - 2.31 - - 1.27 - - 1.28 - - 2.55 - - 208 - Eoff Etot Turn-on delay time td(on) Fall time TYP. - Turn-off switching loss Turn-off delay time MIN. IC = 50 A, VCC = 400 V, VGE = 15 V Total switching loss Rise time TEST CONDITIONS tr IC = 70 A, VCC = 360 V, VGE = 15 V, Rg = 5 L = 500 H, TJ = 125 C Energy losses include tail and diode recovery (see fig. 18) td(off) tf - 69 - - 208 - - 100 - nC mJ ns TJ = 150 C, IC = 120 A, Rg = 22 Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Diode reverse recovery time - 59 93 ns - 4 6 A Qrr - 118 279 nC trr - 130 159 ns Diode peak reverse current Irr Diode recovery charge Qrr Revision: 02-Aug-13 IF = 50 A, dIF/dt = 200 A/s, VR = 200 V IF = 50 A, dIF/dt = 200 A/s, VR = 200 V, TJ = 125 C - 11 13 A - 715 995 nC Document Number: 93103 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70NA60UF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range IGBT Junction to case TEST CONDITIONS MIN. TYP. MAX. UNITS - 40 - 150 C TJ, TStg RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque - 0.28 - 0.53 - 0.05 - - 30 - g - - 1.3 Nm C/W SOT-227 160 200 140 175 120 150 100 125 IC (A) Allowable Case Temperature (C) Case style - 80 100 60 75 40 50 20 25 0 TJ = 25 C TJ = 125 C 0 0 20 40 60 80 100 120 0 1 2 3 4 5 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Collector Current Characteristics 1 1000 100 0.1 ICES (mA) TJ = 125 C IC (A) 10 1 0.01 0.001 0.1 TJ = 25 C 0.01 1 10 100 1000 0.0001 100 200 300 400 500 600 VCE (V) VCES (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 C, VGE = 15 V Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Revision: 02-Aug-13 Document Number: 93103 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70NA60UF www.vishay.com Vishay Semiconductors 4.5 200 175 TJ = 25 C 4.0 125 3.5 IF (A) Vgeth (V) 150 3.0 100 TJ = 125 C 75 TJ = 125 C 50 TJ = 25 C 2.5 25 0 2.0 0.0002 0.0004 0.0006 0.0008 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IC (mA) VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 1.50 4 1.25 100 A Energy (mJ) VCE (V) 3 70 A 2 1.00 0.75 0.50 Eoff 35 A 0.25 0.00 1 10 30 50 70 90 110 130 0 150 20 40 60 80 TJ (C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 C, L = 500 H, VCC = 360 V, Rg = 5 , VGE = 15 V 1000 160 140 Switching Time (ns) Allowable Case Temperature (C) Eon 120 100 80 60 40 td(off) td(on) tf 100 tr 20 0 10 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 C, L = 500 H, VCC = 360 V, Rg = 5 , VGE = 15 V Revision: 02-Aug-13 Document Number: 93103 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70NA60UF www.vishay.com Vishay Semiconductors 170 30 25 145 TJ = 125 C 20 Irr (A) trr (ns) 120 95 70 TJ = 125 C 15 10 TJ = 25 C 45 5 20 100 TJ = 25 C 0 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 11 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 12 - Typical Irr Diode vs. dIF/dt VRR = 200 V, IF = 50 A 1250 1050 TJ = 125 C Qrr (nC) 850 650 450 TJ = 25 C 250 50 100 1000 dIF/dt (A/s) Fig. 13 - Typical Qrr Diode vs. dIF/dt VR = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 0.01 0.001 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Revision: 02-Aug-13 Document Number: 93103 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70NA60UF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (DIODE) R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 16 - Clamped Inductive Load Test Circuit Fig. 17 - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V D.U.T./ driver + VCC Rg Fig. 18 - Switching Loss Test Circuit Revision: 02-Aug-13 Document Number: 93103 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70NA60UF www.vishay.com Vishay Semiconductors 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 s Eoff Eon Ets = (Eon + Eoff) Fig. 19 - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code VS- G B 70 N A 60 U F 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (70 = 70 A) 5 - Circuit configuration (N = High Side Chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - F = F/W FRED Pt(R) diode CIRCUIT CONFIGURATION 3 2 1 4 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95036 Packaging information http://www.vishay.com/doc?95037 Revision: 02-Aug-13 Document Number: 93103 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45 4 x M4 nuts O 4.40 (0.173) O 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes * Dimensioning and tolerancing per ANSI Y14.5M-1982 * Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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