VS-GB70NA60UF
www.vishay.com Vishay Semiconductors
Revision: 02-Aug-13 1Document Number: 93103
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"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
•Low V
CE(on)
•FRED Pt
® hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
PRODUCT SUMMARY
VCES 600 V
IC DC 70 A at 88 °C
VCE(on) typical at 70 A, 25 °C 2.23 V
IF DC 70 A at 86 °C
Package SOT-227
Circuit Chopper high side switch
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 111
A
TC = 80 °C 76
Pulsed collector current ICM 120
Clamped inductive load current ILM 120
Diode continuous forward current IF
TC = 25 °C 113
TC = 80 °C 75
Peak diode forward current IFM 200
Gate to emitter voltage VGE ± 20 V
Power dissipation, IGBT PD
TC = 25 °C 447
W
TC = 80 °C 250
Power dissipation, diode PD
TC = 25 °C 236
TC = 80 °C 132
RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
VS-GB70NA60UF
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Revision: 02-Aug-13 2Document Number: 93103
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage VBR(CES) VGE = 0 V, IC = 1 mA 600 - -
V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 35 A - 1.69 1.88
VGE = 15 V, IC = 70 A - 2.23 2.44
VGE = 15 V, IC = 35 A, TJ = 125 °C - 2.07 2.31
VGE = 15 V, IC = 70 A, TJ = 125 °C - 2.89 3.21
Gate threshold voltage VGE(th) VCE = VGE, IC = 500 μA 3 3.9 5
Temperature coefficient of
threshold voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 9 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 1 100 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.07 2.0 mA
Diode reverse breakdown voltage VBR IR = 1 mA 600 - - V
Diode forward voltage drop VFM
IC = 35 A, VGE = 0 V - 1.80 2.33
V
IC = 70 A, VGE = 0 V - 2.13 2.71
IC = 35 A, VGE = 0 V, TJ = 125 °C - 1.35 1.81
IC = 70 A, VGE = 0 V, TJ = 125 °C - 1.70 2.32
Diode reverse leakage current IRM
VR = VR rated - 0.1 50 μA
TJ = 125 °C, VR = VR rated - 0.02 3 mA
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Qg
IC = 50 A, VCC = 400 V, VGE = 15 V
- 320 -
nCGate to emitter charge (turn-on) Qge -42-
Gate to collector charge (turn-on) Qgc - 110 -
Turn-on switching loss Eon IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
-1.15-
mJ
Turn-off switching loss Eoff -1.16-
Total switching loss Etot -2.31-
Turn-on switching loss Eon
IC = 70 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
-1.27-
Turn-off switching loss Eoff -1.28-
Total switching loss Etot -2.55-
Turn-on delay time td(on) - 208 -
ns
Rise time tr-69-
Turn-off delay time td(off) - 208 -
Fall time tf- 100 -
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 120 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V
Fullsquare
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
-5993ns
Diode peak reverse current Irr -46A
Diode recovery charge Qrr - 118 279 nC
Diode reverse recovery time trr IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
- 130 159 ns
Diode peak reverse current Irr -1113A
Diode recovery charge Qrr - 715 995 nC
VS-GB70NA60UF
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Revision: 02-Aug-13 3Document Number: 93103
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg - 40 - 150 °C
Junction to case IGBT RthJC
- - 0.28
°C/WDiode - - 0.53
Case to heatsink RthCS Flat, greased surface - 0.05 -
Weight -30-g
Mounting torque --1.3Nm
Case style SOT-227
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0 20406080 120100
0
160
100
120
140
20
40
60
80
I
C
(A)
V
CE
(V)
1 10 100 1000
0.01
0.1
1
1000
10
100
I
C
(A)
V
CE
(V)
024135
0
200
25
50
100
75
150
125
175
TJ = 125 °C
TJ = 25 °C
ICES (mA)
VCES (V)
100 200 300 400 500 600
0.0001
1
0.01
0.1
0.001
TJ = 125 °C
TJ = 25 °C
VS-GB70NA60UF
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Revision: 02-Aug-13 4Document Number: 93103
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Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, VGE = 15 V
Fig. 7 - Maximum DC Forward Current vs. Case Temperature
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V
Vgeth (V)
IC (mA)
0.0002 0.0004 0.0006 0.0008 0.001
2.0
4.5
3.0
3.5
4.0
2.5
TJ = 25 °C
TJ = 125 °C
VCE (V)
TJ (°C)
10 50 9030 70 130110 150
1
4
3
2
100 A
70 A
35 A
Allowable Case Temperature (°C)
IF - Continuous Forward Current (A)
020 60 10040 80 120
0
160
100
120
140
20
40
60
80
I
F
(A)
V
FM
(V)
0 0.5 1.51.0 2.0 2.5 3.0 3.5
0
200
25
75
100
150
125
175
50
TJ = 125 °C
TJ = 25 °C
Energy (mJ)
IC (A)
0 20406080
0.00
1.50
0.50
1.00
0.75
1.25
0.25
Eoff
Eon
Switching Time (ns)
IC (A)
010 7030 50 604020 80
10
1000
100
td(off)
td(on)
tf
tr
VS-GB70NA60UF
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Revision: 02-Aug-13 5Document Number: 93103
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Fig. 11 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
Fig. 12 - Typical Irr Diode vs. dIF/dt
VRR = 200 V, IF = 50 A
Fig. 13 - Typical Qrr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
20
170
45
95
120
145
70
TJ = 125 °C
TJ = 25 °C
I
rr
(A)
dI
F
/dt (A/µs)
100 1000
0
30
10
20
5
15
25
TJ = 125 °C
TJ = 25 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
50
1250
450
850
250
650
1050
TJ = 125 °C
TJ = 25 °C
0.001
0.1
0.01
1
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
100101
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
VS-GB70NA60UF
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Revision: 02-Aug-13 6Document Number: 93103
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Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (DIODE)
Fig. 16 - Clamped Inductive Load Test Circuit Fig. 17 - Pulsed Collector Current Test Circuit
Fig. 18 - Switching Loss Test Circuit
0.001
0.1
0.01
1
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
100101
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T.
L
VC *
2
1
Rg
VCC
D.U.T.
R = VCC
ICM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
R
g
V
CC
+
-
VS-GB70NA60UF
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Revision: 02-Aug-13 7Document Number: 93103
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Fig. 19 - Switching Loss Waveforms Test Circuit
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95036
Packaging information http://www.vishay.com/doc?95037
t = 5 µs
t
d(on)
t
f
t
r
90 %
t
d(off)
10 %
90 %
10 %
5 %
V
C
I
C
E
on
E
off
E
ts
= (E
on
+ E
off
)
1
2
3
2- Insulated Gate Bipolar Transistor (IGBT)
3- B = IGBT Generation 5
4- Current rating (70 = 70 A)
5- Circuit configuration (N = High Side Chopper)
6- Package indicator (A = SOT-227)
7- Voltage rating (60 = 600 V)
9- F = F/W FRED Pt® diode
8- Speed/type (U = Ultrafast IGBT)
Device code
5
132 4 6 7 8 9
GVS- B 70 N A 60 U F
1- Vishay Semiconductors product
2
1
3
4
Document Number: 95036 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 28-Aug-07 1
SOT-227
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
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Revision: 02-Oct-12 1Document Number: 91000
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