AT84AD004B Dual 8-bit 500 Msps ADC Datasheet 1. Features * * * * * * * * * Dual ADC with 8-bit Resolution 500 Msps Sampling Rate per Channel, 1 Gsps in interleaved Mode Single or 1:2 Demultiplexed Output LVDS Output Format (100) 500 mVpp Analog Input (Differential Only) Differential or Single-ended 50 PECL/LVDS Compatible Clock Inputs Power Supply: 3.3V (Analog), 3.3V (Digital), 2.25V (Output) LQFP144 or LQFP-ep 144L Green packages Temperature Range: - 0C < Tamb < 70 C (Commercial Grade) - -40C < Tamb < 85 C (Industrial Grade) * 3-wire Serial Interface - 16-bit Data, 3-bit Address - 1:2 or 1:1 Output Demultiplexer Ratio Selection - Full or Partial Standby Mode - Analog Gain (1.5 dB) Digital Control - Input Clock Selection - Analog Input Switch Selection - Binary or Gray Logical Outputs - Synchronous Data Ready Reset - Data Ready Delay Adjustable on Both Channels - interleaving Functions: * Offset and Gain (Channel to Channel) Calibration * Digital Fine SDA (Fine Sampling Delay Adjust) on One Channel - Internal Static or Dynamic Built-In Test (BIT) 2. Performance * * * * Low Power Consumption: 0.7W per Channel Power Consumption in Standby Mode: 120 mW 1 GHz Full Power Input Bandwidth (-3 dB) SNR = 45 dB Typ (7.2 ENOB), THD = -53 dBc, SFDR = -56 dBc at Fs = 500 Msps Fin = 250 MHz * 2-tone IMD3: -54 dBc (249 MHz, 251 MHz) at 500 Msps * DNL = 0.25 LSB, INL = 0.5 LSB * Low Bit Error Rate (10-18) at 500 Msps Visit our website: www.e2v.com for the latest version of the datasheet e2v semiconductors SAS 2009 0818F-BDC-09/09 AT84AD004B 3. Application * Digital Oscilloscopes * Communication Receivers (I/Q) * Direct RF Down Conversion * High Speed Data Acquisition * Radar/ECM 4. Description The AT84AD004B is a monolithic dual 8-bit analog-to-digital converter, offering low 1.4W power consumption and excellent digitizing accuracy. It integrates dual on-chip track/holds that provide an enhanced dynamic performance with a sampling rate of up to 500 Msps and an input frequency bandwidth of 1 GHz. The dual concept, the integrated demultiplexer and the easy interleaving mode make this device user-friendly for all dual channel applications, such as direct RF conversion or data acquisition. The smart function of the 3-wire serial interface eliminates the need for external components, which are usually necessary for gain and offset tuning and setting of other parameters, leading to space and power reduction as well as system flexibility. 5. Functional Description The AT84AD004B is a dual 8-bit 500 Msps ADC based on advanced high-speed BiCMOS technology. Each ADC includes a front-end analog multiplexer followed by a Sample and Hold (S/H), and an 8-bit flash-like architecture core analog-to-digital converter. The output data is followed by a switchable 1:1 or 1:2 demultiplexer and LVDS output buffers (100). Two over-range bits are provided for adjustment of the external gain control on each channel. A 3-wire serial interface (3-bit address and 16-bit data) is included to provide several adjustments: * Analog input range adjustment (1.5 dB) with 8-bit data control using a 3-wire bus interface (steps of 0.011 dB) * Analog input switch: both ADCs can convert the same analog input signal I or Q * Gray or binary encoder output. Output format: DMUX 1:1 or 1:2 with control of the output frequency on the data ready output signal * Partial or full standby on channel I or channel Q * Clock selection: - Two independent clocks: CLKI and CLKQ - One master clock (CLKI) with the same phase for channel I and channel Q - One master clock but with two phases (CLKI for channel I and CLKIB for channel Q) * ISA: Internal Settling Adjustment on channel I and channel Q * FiSDA: Fine Sampling Delay Adjustment on channel Q * Adjustable Data Ready Output Delay on both channels * Test mode: decimation mode (by 16), Built-in Test 2 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B A calibration phase is provided to set the two DC offsets of channel I and channel Q close to code 127.5 and calibrate the two gains. The offset and gain error can also be set externally via the 3-wire serial interface. The AT84AD004B operates in fully differential mode from the analog inputs up to the digital outputs. The AT84AD004B features a full-power input bandwidth of 1 GHz. Figure 5-1. Simplified Block Diagram CLKI Divider 2 to16 Clock Buffer DDRB DoirI + VINI S/H VINIB - 8bit ADC I DRDA I DMUX 1:2 or 1:1 I 8 Gain control I Calibration Gain/offset ISA I LVDS Clock Buffer LVDS Buffer I 2 16 DOAI DOAIN 16 DOBI DOBIN 2 Data BIT 3-wire Serial Interface 3WSI Gain control Q Calibration Gain/offset ISA Q & FiSDA + S/H VINQB - Clock Ldn DMUX control Mode 2 DoirQ VINQ DOIRI DOIRIN DMUX control Input switch INPUT MUX CLKIO 8bit ADC Q 8 DMUX 1: 2 or 1: 1 Q LVDS buffe r Q DOIRQ DOIRQN 16 DOAQ DOAQN 16 DOBQ DOBQN CLKQ Clock Buffer DDRB Divider 2 to 16 DRDA Q LVDS Clock Buffer 2 CLKQO 3 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 6. Typical Applications Figure 6-1. Satellite Receiver Application Satellite Low Noise Converter (Connected to the Dish) Bandpass Amplifier Dish Satellite Tuner Low Pass Filter Bandpass Amplifier 11..12 GHz Tunable Band Filter IF Band Filter AGC 1..2 GHz Synthesizer 1.5 ... 2.5 GHz Local Oscillator I I I Local Oscillator Control Functions: AT84AD004 Clock and Carrier 90 Q Recovery... Q 0 Q Clock Q Quadrature Demodulation 4 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 6-2. Dual Channel Digital Oscilloscope Application DAC Gain A Channel A A Analog Switch Channel B ADC B DAC Offset Display FISO RAM DAC Offset P ADC A DAC Gain Channel Mode Selection Clock Selection Timing Circuit DACs Smart Dual ADC DACs 6.1 Absolute Maximum Ratings Table 6-1. Absolute Maximum Ratings Parameter Symbol Value Unit Analog positive supply voltage VCCA 3.6 V Digital positive supply voltage VCCD 3.6 V Output supply voltage VCCO 3.6 V VCCA to VCCD 0.8 V VCCO 1.6 V Analog input voltage VINI or VINIB VINQ or VINQB 1/-1 V Digital input voltage VD -0.3 to VCCD + 0.3 V Clock input voltage VCLK or VCLKB -0.3 to VCCD + 0.3 V Maximum difference between VCLK and VCLKB VCLK - VCLKB -2 to 2 V Maximum junction temperature TJ 125 C Storage temperature Tstg -65 to 150 C Tleads 300 C Maximum difference between VCCA and VCCD Minimum VCCO Lead temperature (soldering 10s) Note: Absolute maximum ratings are limiting values (referenced to GND = 0V), to be applied individually, while other parameters are within specified operating conditions. Long exposure to maximum ratings may affect device reliability. 5 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 6.2 Recommended Conditions of Use Table 6-2. Recommended Conditions of Use Parameter Symbol Comments Recommended Value Unit Analog supply voltage VCCA 3.3 V Digital supply voltage VCCD 3.3 V Output supply voltage VCCO 2.25 V VINi - VIniB or VINQ - VINQB 500 mVpp Vinclk 600 mVpp ISA 0 ps 0 < Tamb < 70 -40 < Tamb < 85 C Differential analog input voltage (full-scale) Differential clock input level Internal Settling Adjustment (ISA) with a 3-wire serial interface for channel I and channel Q Operating temperature range TAmbient Commercial grade Industrial grade 7. Electrical Operating Characteristics Unless otherwise specified: * VCCA = 3.3V; VCCD = 3.3V; VCCO = 2.25V * VINI - VINB or VINQ - VINQB = 500 mVpp full-scale differential input * LVDS digital outputs (100) * Tamb (typical) = 25 C * Full temperature range: 0 C < Tamb < 70 C (commercial grade) Table 7-1. Electrical Operating Characteristics in Nominal Conditions Parameter Symbol Min Resolution Typ Max 8 Unit Bits Power Requirements Positive supply voltage - Analog - Digital Output digital (LVDS) and serial interface VCCA VCCD VCCO Supply current (typical conditions) - Analog - Digital - Output Supply current (1:2 DMUX mode) - Analog - Digital - Output Supply current (2 input clocks, 1:2 DMUX mode) - Analog - Digital - Output 3.15 3.15 2.0 3.3 3.3 2.25 3.45 3.45 2.5 V V V ICCA ICCD ICCO 150 230 100 180 275 120 mA mA mA ICCA ICCD ICCO 150 260 175 180 310 210 mA mA ICCA ICCD ICCO 150 290 180 180 350 215 mA 6 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 7-1. Electrical Operating Characteristics in Nominal Conditions (Continued) Parameter Typ Max Unit ICCA ICCD ICCO 80 160 55 95 190 65 mA mA mA Supply current (1 channel only, 1:2 DMUX mode) - Analog - Digital - Output ICCA ICCD ICCO 80 170 90 95 205 110 mA mA mA Supply current (full standby mode) - Analog - Digital - Output ICCA ICCD ICCO 12 24 3 20 39 7 mA mA mA Nominal dissipation (1 clock, 1:1 DMUX mode, 2 channels) PD 1.4 1.7 W Nominal dissipation (full standby mode) stbpd 120 Supply current (1 channel only, 1:1 DMUX mode) - Analog - Digital - Output Symbol Min mW Analog Inputs Full-scale differential analog input voltage to obtain full-scale with no gain adjust (mode 0) VINi - VIniB or - VINQ VINQB mV 450 500 mV Analog input common mode Analog input capacitance I and Q Full power input bandwidth (-3 dB) 550 0 CIN V 2 FPBW Gain flatness (-0.5 dB) pF 1.0 GHz 400 MHz Clock Input Logic compatibility for clock inputs and DDRB Reset (pins 124,125,126,127,128,129) PECL/LVDS clock inputs and DDRB input voltages (VCLKI/IN or VCLKQ/QN) Differential logical level PECL/ECL/LVDS VIL - VIH Clock input and DDRB input power level 600 -9 0 Clock input capacitance mV 6 dBm 2 pF Digital Outputs (including DOIRI, DOIRIN, DOIRQ and DOIRQN signals) Logic compatibility for digital outputs (depending on the value of VCCO) Differential output voltage swings (assuming VCCO = 2.25V) Output levels (assuming VCCO = 2.25V) 100 differentially terminated Logic 0 voltage Logic 1 voltage LVDS VOD 220 270 350 mV VOL VOH 1.0 1.25 1.1 1.35 1.2 1.48 V V 7 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 7-1. Electrical Operating Characteristics in Nominal Conditions (Continued) Parameter Symbol Min Typ Max Unit Output offset voltage (assuming VCCO = 2.25V) 100 differentially terminated VOS 1125 1250 1340 mV Output impedance RO 50 Output current (shorted output) 12 mA Output current (grounded output) 30 mA Output level drift with temperature 1.3 mV/C Digital Input (Serial Interface) Maximum clock frequency (input clk) Fclk 50 MHz Input logical level 0 (clk, mode, data, ldn) -0.4 0 0.4 V Input logical level 1 (clk, mode, data, ldn) VCCO - 0.4 VCCO - 0.4 VCCO + 0.4 V Output logical level 0 (cal) -0.4 0 0.4 V Output logical level 1 (cal) VCCO - 0.4 VCCO VCCO + 0.4 V 15 pF Maximum output load (cal) Note: The gain setting is 0 dB, one clock input, no standby mode [full power mode], 1:1 DMUX, calibration off. Table 7-2. Electrical Operating Characteristics Parameter Symbol Min Typ Max Unit DC Accuracy No missing code Guaranteed over specified temperature range Differential non-linearity DNL 0.25 0.6 LSB Integral non-linearity INL 0.5 1 LSB Gain error (single channel I or Q) with calibration -2 0 2 % Input offset matching (single channel I or Q) with calibration -2 0 2 LSB 0.062 0.064 Gain error drift against temperature Gain error drift against VCCA Mean output offset code with calibration 126 LSB/C LSB/mV 127.5 129 LSB Transient Performance Bit Error Rate Fs = 500 Msps Fin = 250 MHz ADC settling time channel I or Q (between 10% - 90% of output response) VIni - ViniB = 500 mVpp Note: BER 10-18 Error/ sample TS 170 ps The gain setting is 0 dB, two clock inputs, no standby mode [full power mode], 1:2 DMUX, calibration on. 8 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 7-3. AC Performance Parameter Symbol Min Typ Max Unit 44 46 dBc 43 45 dBc 42 44 dBc 7 7.4 Bits 6.9 7.2 Bits 6.7 7.0 Bits 48 55 dBc 47 53 dBc 47 53 dBc 50 57 dBc 49 56 dBc 49 56 dBc -54 dBc AC Performance Signal-to-noise Ratio Fs = 500 Msps Fin = 20 MHz Fs = 500 Msps Fin = 250 MHz SNR Fs = 500 Msps Fin = 500 MHz Effective Number of Bits Fs = 500 Msps Fin = 20 MHz Fs = 500 Msps Fin = 250 MHz ENOB Fs = 500 Msps Fin = 500 MHz Total Harmonic Distortion (First 9 Harmonics) Fs = 500 Msps Fin = 20 MHz Fs = 500 Msps Fin = 250 MHz |THD| Fs = 500 Msps Fin = 500 MHz Spurious Free Dynamic Range Fs = 500 Msps Fin = 20 MHz Fs = 500 Msps Fin = 250 MHz |SFDR| Fs = 500 Msps Fin = 500 MHz Two-tone Inter-modulation Distortion (Single Channel) FIN1 = 249 MHz , FIN2 = 251 MHz at Fs = 500 Msps IMD Phase matching using auto-calibration and FiSDA in interleaved mode (channel I and Q) Fin = 250 MHz Fs = 500 Msps d Crosstalk channel I versus channel Q Fin = 250 MHz, Fs = 500 Msps(2) Cr Notes: -0.7 0 0.7 -55 dB 1. Differential input [-1 dBFS analog input level], gain setting is 0 dB, two input clock signals, no standby mode, 1:1 DMUX, ISA = 0 ps. 2. Measured on the AT84AD004BTD-EB Evaluation Board. 9 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 7-4. AC Performances Over Full Industrial Temperature Range (-40 C < Tamb < 85 C) Parameter Symbol Min Typ Max Unit 41 44 dBc 6.5 7.0 Bits 43 53 dBc 45 56 dBc Symbol Min Typ Maximum equivalent clock frequency Fint = 2 x Fs Where Fs = external clock frequency Fint 1 Minimum clock frequency Fint 20 Msps Differential non-linearity in interleaved mode intDNL 0.25 LSB Integral non-linearity in interleaved mode intINL 0.5 LSB 45 dBc 44 dBc 7.3 Bits 7.1 Bits 54 dBc 53 dBc 56 dBc 55 dBc -54 dBc AC Performance Signal-to-noise Ratio Fs = 500 Msps Fin = 500 MHz Effective Number of Bits Fs = 500 Msps Fin = 500 MHz Total Harmonic Distortion (First 9 Harmonics) Fs = 500 Msps Fin = 500 MHz Spurious Free Dynamic Range Fs = 500 Msps Fin = 500 MHz Table 7-5. AC Performances in Interleaved Mode Parameter Max Unit Interleaved Mode Gsps Signal-to-noise Ratio in interleaved Mode Fint = 1 Gsps Fin = 20 MHz iSNR Fint = 1 Gsps Fin = 250 MHz Effective Number of Bits in interleaved Mode Fint = 1 Gsps Fin = 20 MHz iENOB Fint = 1 Gsps Fin = 250 MHz Total Harmonic Distortion in interleaved Mode Fint = 1 Gsps Fin = 20 MHz |iTHD| Fint = 1 Gsps Fin = 250 MHz Spurious Free Dynamic Range in interleaved Mode Fint = 1 Gsps Fin = 20 MHz |iSFDR| Fint = 1 Gsps Fin = 250 MHz Two-tone Inter-modulation Distortion (Single Channel) in interleaved Mode FIN1 = 249 MHz , FIN2 = 251 MHz at Fint = 1 Gsps Note: iIMD One analog input on both cores, clock I samples the analog input on the rising and falling edges. The calibration phase is necessary. The gain setting is 0 dB, one input clock I, no standby mode, 1:1 DMUX, FiSDA adjustment. 10 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 7-6. Switching Performances Parameter Symbol Min Typ Max Unit Switching Performance and Characteristics - See "Timing Diagrams" on page 12. Maximum operating clock frequency FS 500 Minimum clock frequency (no transparent mode) Minimum clock frequency (with transparent mode) FS Msps 10 Msps 1 Ksps Minimum clock pulse width [high] (No transparent mode) TC1 0.4 1 50 ns Minimum clock pulse width [low] (No transparent mode) TC2 0.4 1 50 ns Aperture delay: nominal mode with ISA & FiSDA TA 1 ns Aperture uncertainty Jitter 0.4 ps (rms) Data output delay between input clock and data TDO 3.8 ns Data Ready Output Delay TDR 3 ns TRDR 2 ns TD2 1/Fs + Tdrda ps Tdrda range -560 to 420 ps Data Ready Reset to Data Ready Data Output Delay with Data Ready Data Ready (CLKO) Delay Adjust (140 ps steps) Output skew 50 100 ps Output rise/fall time for DATA (20% - 80%) TR/TF 300 350 500 ps Output rise/fall time for DATA READY (20% - 80%) TR/TF 300 350 500 ps 3 (port B) 3.5 (port A, 1:1 DMUX mode) 4 (port A, 1:2 DMUX mode) Data pipeline delay (nominal mode) TPD 2.5 (port B) 3 (port A, 1:1 DMUX mode) 3.5 (port A, 1:2 DMUX mode) Data pipeline delay (nominal mode) in S/H transparent mode DDRB recommended pulse width Clock cycles 1 ns 11 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-1. Differential Inputs Voltage Span (Full-scale) VIN mV VINB 500 mV Full-scale Analog Input -250 mV +250 mV +125 0V -125 t The analog input full-scale range is 0.5V peak-to-peak (Vpp), or -2 dBm into the 50 (100 differential) termination resistor. In differential mode input configuration, which means 0.25V on each input, or 125 mV around common mode voltage. 7.1 Timing Diagrams Figure 7-2. Timing Diagram, ADC I or ADC Q, 1:2 DMUX Mode, Clock I for ADC I, Clock Q for ADC Q Address: D7 D6 D5 D4 D3 D2 D1 D0 1 1 X X 1 X 0 0 TA N+3 N+1 VIN N+2 N CLKI or CLKQ Pipeline delay = 4 clock cycles DOIA[0:7] or DOQA[0:7] N-4 TDO Pipeline delay = 3 clock cycles DOIB[0:7] or DOQB[0:7] N N - 2 N-3 TDO N-1 TD2 N +1 Programmable delay CLKOI or CLKOQ (= CLKI/2) CLKOI or CLKOQ (= CLKI/4) 12 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-3. 1:1 DMUX Mode, Clock I = ADC I, Clock Q = ADC Q Address: D7 D6 D5 D4 D3 D2 D1 D0 1 1 X X 0 X 0 0 TA N+3 N+2 N+1 VIN N CLKI or CLKQ TDO Pipeline delay = 3.5 clock cycles DOIA[0:7] or DOQA[0:7] N -3 N -2 N - 1 N N+1 CLKOI or CLKOQ DOIB[0:7] and DOQB[0:7] are high impedance Figure 7-4. 1:2 DMUX Mode, Clock I = ADC I, Clock I = ADC Q Address: D7 D6 D5 D4 D3 D2 D1 D0 1 0 X X 1 X 0 0 TA N+3 N+2 N+1 VIN N CLKI TDO Pipeline delay = 4 clock cycles DOIA[0:7] NI - 4 NI NI - 2 Pipeline delay = 3 clock cycles TDO DOIB[0:7] NI - 3 NI - 1 NI +1 DOQA[0:7] NQ - 4 NQ - 2 NQ DOQB[0:7] NQ - 3 NQ - 1 NQ +1 TD2 CLKOI (= CLKI/2) CLKOI (= CLKI/4) CLKOQ is high impedance 13 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-5. 1:1 DMUX Mode, Clock I = ADC I, Clock I = ADC Q Address: D7 D6 D5 D4 D3 D2 D1 D0 1 0 X X 0 X 0 0 TA N+3 N+1 VIN N+2 N CLKI TDO Pipeline delay = 3.5 clock cycles DOIA[0:7] N -3 N -2 N - 1 N N+1 DOQA[0:7] N -3 N -2 N - 1 N N+1 CLKOI DOIB[0:7] and DOQB[0:7] are high impedance CLKOQ is high impedance 14 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-6. 1:2 DMUX Mode, Clock I = ADC I, Clock IN = ADC Q Address: D7 D6 D5 D4 D3 D2 D1 D0 0 X X X 1 X 0 0 N+6 N+4 N+2 TA N+5 VIN N N+1 N+3 CLKI CLKIN TDO Pipeline delay = 4 clock cycles DOQA[0:7] N -8 Pipeline delay = 3 clock cycles DOQB[0:7] N N- 4 N -6 TDO N -2 Pipeline delay = 3.5 clock cycles N+2 TDO DOIA[0:7] N -7 N -3 N+1 DOIB[0:7] N -5 N -1 N+3 TD2 CLKOI (= CLKI/2) CLKOI (= CLKI/4) CLKOQ is high impedance 15 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-7. 1:1 DMUX Mode, Clock I = ADC I, Clock IN = ADC Q Address: D7 D6 D5 D4 D3 D2 D1 D0 0 X X X 0 X 0 0 N+6 N+4 N+2 TA N+5 VIN N N+3 N+1 CLKI CLKIN TDO Pipeline delay = 3.5 clock cycles DOQA[0:7] N -6 N -4 N -5 N -3 N+2 N +1 N+3 TDO Pipeline delay = 3 clock cycles DOIA[0:7] N N - 2 N - 1 CLKOI (= CLKI/2) DOIB[0:7] and DOQB[0:7] are high impedance CLKOQ is high impedance Figure 7-8. 1:1 DMUX Mode, Decimation Mode Test (1:16 Factor) Address: D7 D6 D5 D4 D3 D2 D1 D0 1 0 X X 0 X 0 0 N - 16 VIN N N + 16 N + 32 16 clock cycles CLKI DOIA[0:7] N - 16 N N + 16 N + 32 N + 48 DOQA[0:7] N - 16 N N + 16 N + 32 N + 48 CLKOI DOIB[0:7] and DOQB[0:7] are high impedance CLKOQ is high impedance Note: Frequency(CLKOI) = Frequency(Data) = Frequency(CLKI)/16. 16 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-9. Data Ready Reset 500 ps CLKI or CLKQ 500 ps 1 ns min DDRB FORBIDDEN FORBIDDEN ALLOWED ALLOWED Figure 7-10. Data Ready Reset 1:1 DMUX Mode TA N VIN N+1 Clock in Reset CLKI or CLKQ Pipeline Delay + TDO DOIA[0:7] or DOQA[0:7] N TDR CLKOI or CLKOQ TDR 2 ns DDRB 1 ns min Note: The Data Ready Reset is taken into account only 2 ns after it is asserted. The output clock first completes its cycle (if the reset occurs when it is high, it goes low only when its half cycle is complete; if the reset occurs when it is low, it remains low) and then only, remains in reset state (frozen to a low level in 1:1 DMUX mode). The next falling edge of the input clock after reset makes the output clock return to normal mode (after TDR). 17 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 7-11. Data Ready Reset 1:2 DMUX Mode TA N VIN N+1 Clock in Reset CLKI or CLKQ Pipeline Delay + TDO DOIA[0:7] or DOQA[0:7] N DOIB[0:7] or DOQB[0:7] N+1 TDR TDR CLKOI or CLKOQ (= CLKI/2) TDR + 2 cycles CLKOI or CLKOQ (= CLKI/4) TDR + 2 cycles 2 ns DDRB 1 ns min Notes: 1. In 1:2 DMUX, Fs/2 mode: The Data Ready Reset is taken into account only 2 ns after it is asserted. The output clock first completes its cycle (if the reset occurs when it is low, it goes high only when its half cycle is complete; if the reset occurs when it is high, it remains high) and then only, remains in reset state (frozen to a high level in 1:2 DMUX Fs/2 mode). The next rising edge of the input clock after reset makes the output clock return to normal mode (after TDR). 2. In 1:2 DMUX, Fs/4 mode: The Data Ready Reset is taken into account only 2 ns after it is asserted. The output clock first completes its cycle (if the reset occurs when it is high, it goes low only when its half cycle is complete; if the reset occurs when it is low, it remains low) and then only, remains in reset state (frozen to a low level in 1:2 DMUX Fs/4 mode). The next rising edge of the input clock after reset makes the output clock return to normal mode (after TDR). 18 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 7.2 Functions Description Table 7-7. Description of Functions Name Function VCCA Positive analog power supply VCCD Positive digital power supply VCCO Positive output power supply GNDA Analog ground VCCA = 3.3V VCCD = 3.3V VCCO = 2.25V VINI GNDD Digital ground GNDO Output ground VINI, VINIB Differential analog inputs I VINQ, VINQB Differential analog inputs Q CLKOI, CLKOIN, CLKOQ, CLKOQN Differential output data ready I and Q CLKI, CLKIN, CLKQ, CLKQN Differential clock inputs I and Q DDRB, DDRBN Synchronous data ready reset I and Q Mode Bit selection for 3-wire bus or nominal setting Clk Input clock for 3-wire bus interface Data Input data for 3-wire bus Ldn Beginning and end of register line for 3-wire bus interface <D0AI0:DOAI7> <D0AI0N:DOAI7N> <D0BI0:DOBI7> <D0BI0N:DOBI7N> Differential output data port channel I <D0AQ0:DOAQ7> <D0AQ0N:DOAQ7N> <D0BQ0:DOBQ7> <D0BQ0N:DOBQ7N> Differential output data port channel Q DOIRI, DOIRIN DOIRQ, DOIRQN Differential output IN range data I and Q VtestQ Test voltage output for ADC Q (to be left open) VtestI Test voltage output for ADC I (to be left open) Cal Output bit status internal calibration Vdiode Test diode voltage for Tj measurement 32 D0AI0 D0AI0N D0BI0 D0BI0N DOAI7 DOAI7N DOBI7 DOBI7N 32 D0AQ0 D0AQ0 DOAQ7 DOAQ7 VINIB VINQ DOBQ0 DOQBQ7 DOBQ0N DOQBQ7N VINQB CLKI AT84AD004 4 DOIRI, DOIRIN DOIRQ, DOIRQN CLKQ 4 CLOCKOI, CLOCKOIB CLOCKOQ, CLOCKOQB CLKQB 2 VtestI VtestQ CLKIB Vdiode GNDA GNDD GNDO mode clk data ldn 19 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 7.3 Digital Output Coding (Nominal Settings) Table 7-8. Digital Output Coding (Nominal Setting) Digital Output I or Q (Binary Coding) Out-of-range Bit > Positive full-scale + 1/2 LSB 11111111 1 250 mV 248 mV Positive full-scale + 1/2 LSB Positive full-scale - 1/2 LSB 11111111 11111110 0 0 1 mV -1 mV Bipolar zero + 1/2 LSB Bipolar zero - 1/2 LSB 10000000 01111111 0 0 -248 mV -250 mV Negative full-scale + 1/2 LSB Negative full-scale - 1/2 LSB 00000001 00000000 0 0 < -250 mV < Negative full-scale - 1/2 LSB 00000000 1 Differential Analog Input Voltage Level > 250 mV 8. Pin Description Table 8-1. AT84AD004B Pin Description Symbol Pin number Function GNDA, GNDD, GNDO 10, 12, 22, 24, 36, 38, 40, 42, 44, 46, 51, 54, 59, 61, 63, 65, 67, 69, 85, 87, 97, 99, 109, 111, 130, 142, 144 Ground pins. To be connected to external ground plane VCCA 41, 43, 45, 60, 62, 64 Analog positive supply: 3.3V typical VCCD 9, 21, 37, 39, 66, 68, 88, 100, 112, 123, 141 3.3V digital supply VCCO 11, 23, 86, 98, 110, 143 2.25V output and 3-wire serial interface supply VINI 57, 58 In-phase (+) analog input signal of the sample & hold differential preamplifier channel I VINIB 55, 56 Inverted phase (-) of analog input signal (VINI) VINQ 47, 48 In-phase (+) analog input signal of the sample & hold differential preamplifier channel Q VINQB 49, 50 Inverted phase (-) of analog input signal (VINQ) CLKI 124 In-phase (+) clock input signal CLKIN 125 Inverted phase (-) clock input signal (CLKI) CLKQ 129 In-phase (+) clock input signal CLKQN 128 Inverted phase (-) clock input signal (CLKQ) DDRB 126 Synchronous data ready reset I and Q DDRBN 127 Inverted phase (-) of input signal (DDRB) DOAI0, DOAI1, DOAI2, DOAI3, DOAI4, DOAI5, DOAI6, DOAI7 117, 113, 105, 101, 93, 89, 81, 77 In-phase (+) digital outputs first phase demultiplexer (channel I) DOAI0 is the LSB. D0AI7 is the MSB DOAI0N, DOAI1N, DOAI2N, DOAI3N, DOAI4N, DOAI5N, DOAI6N, DOAI7N, 118, 114, 106, 102, 94, 90, 82, 78 Inverted phase (-) digital outputs first phase demultiplexer (channel I) DOAI0N is the LSB. D0AI7N is the MSB DOBI0, DOBI1, DOBI2, DOBI3, DOBI4, DOBI5, DOBI6, DOBI7 119, 115, 107, 103, 95, 91, 83, 79 In-phase (+) digital outputs second phase demultiplexer (channel I) DOBI0 is the LSB. D0BI7 is the MSB 20 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 8-1. AT84AD004B Pin Description (Continued) Symbol Pin number Function DOBI0N, DOBI1N, DOBI2N, DOBI3N, DOBI4N, DOBI5N, DOBI6N, DOBI7N 120, 116, 108, 104, 96, 92, 84, 80 Inverted phase (-) digital outputs second phase demultiplexer (channel I) DOBI0N is the LSB. D0BI7N is the MSB DOAQ0, DOAQ1, DOAQ2, DOAQ3, DOAQ4, DOAQ5, DOAQ6, DOAQ7 136, 140, 4, 8, 16, 20, 28, 32 In-phase (+) digital outputs first phase demultiplexer (channel Q) DOAI0 is the LSB. D0AQ7 is the MSB DOAQ0N, DOAQ1N, DOAQ2N, DOAQ3N, DOAQ4N, DOAQ5N, DOAQ6N, DOAQ7N 135, 139, 3, 7, 15, 19, 27, 31 Inverted phase (-) digital outputs first phase demultiplexer (channel Q) DOAI0N is the LSB. D0AQ7N is the MSB DOBQ0, DOBQ1, DOBQ2, DOBQ3, DOBQ4, DOBQ5, DOBQ6, DOBQ7 134, 138, 2, 6, 14, 18, 26, 30 In-phase (+) digital outputs second phase demultiplexer (channel Q) DOBQ0 is the LSB. D0BQ7 is the MSB DOBQ0N, DOBQ1N, DOBQ2N, DOBQ3N, DOBQ4N, DOBQ5N, DOBQ6N, DOBQ7N 133, 137, 1 ,5, 13, 17, 25, 29 Inverted phase (-) digital outputs second phase demultiplexer (channel Q) DOBQ0N is the LSB. D0BQ7N is the MSB DOIRI 75 In-phase (+) out-of-range bit input (I phase) combined demultiplexer out-of-range is high on the leading edge of code 0 and code 256 DOIRIN 76 Inverted phase of output signal DOIRI DOIRQ 34 In-phase (+) out-of-range bit input (Q phase) combined demultiplexer out-of-range is high on the leading edge of code 0 and code 256 DOIRQN 33 Inverted phase of output signal DOIRQ MODE 74 Bit selection for 3-wire bus interface or nominal setting CLK 73 Input clock for 3-wire bus interface DATA 72 Input data for 3-wire bus LND 71 Beginning and end of register line for 3- wire bus interface CLKOI 121 Output clock in-phase (+) channel I CLKOIN 122 Inverted phase (-) output clock channel I CLKOQ 132 Output clock in-phase (+) channel Q, 1/2 input clock frequency CLKOQN 131 Inverted phase (-) output clock channel Q VtestQ, VtestI 53, 52 Pins for internal test (to be left open) Cal 70 Calibration output bit status Vdiode 35 Positive node of diode used for die junction temperature measurements 21 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 8-1. AT84AD004B Pinout (Top View) LQFP 144 20 by 20 by 1.4 mm Q I Dual 8-bit 9. Typical Characterization Results Nominal conditions (unless otherwise specified): * VCCA = 3.3V; VCCD = 3.3V; VCCO = 2.25V * VINI - VINB or VINQ to VINQB = 500 mVpp full-scale differential input * LVDS digital outputs (100) * Tamb (typical) = 25 C * Full temperature range: 0 C < Tamb < 70C (commercial grade) or -40 C < Tamb < 85 C (industrial grade) 22 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 9.1 Typical Full Power Input Bandwidth * Fs = 500 Msps * Pclock = 0 dBm * Pin = -1 dBFS * Gain flatness (0.5 dB) from DC to > 350 MHz * Full power input bandwidth at -3 dB > 1 GHz Figure 9-1. Full Power Input Bandwidth 0 -1 -2 dBFS Gain Flatness -3 dB Bandwidth -3 -4 -5 -6 -7 250 500 750 1000 1250 1500 Fin (MHz) 9.2 Typical Crosstalk Figure 9-2. Crosstalk (Fs = 500 Msps) 80.00 70.00 60.00 dBc 50.00 40.00 30.00 20.00 10.00 0.00 0 100 200 300 400 500 600 700 800 900 1000 Fin(MHz) Note: Measured on the AT84AD004BTD-EB Evaluation Board. 23 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 9.3 Typical DC, INL and DNL Patterns 1:2 DMUX mode, Fs/4 DR type Figure 9-3. Typical INL (Fs = 50 Msps, Fin = 1 MHz, Saturated Input) 0,6 0,4 INL (Lsb) 0,2 0 -0,2 -0,4 -0,6 1 16 31 46 61 76 91 106 121 136 151 166 181 196 211 226 241 256 Codes Figure 9-4. Typical DNL (Fs = 50 Msps, Fin = 1 MHz, Saturated Input) 0.3 0.2 DNL (Lsb) 0.1 0 -0.1 -0.2 -0.3 1 16 31 46 61 76 91 106 121 136 151 166 181 196 211 226 241 256 Codes 24 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 9.4 Typical Dynamic Performances Versus Sampling Frequency Figure 9-5. ENOB Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2) 7.6 7.5 ENOB (Bit) 7.4 7.3 7.2 7.1 7.0 50 100 150 200 250 300 350 400 450 500 550 Fs (Msps) Figure 9-6. SFDR Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2) -56 SFDR (dBc) -59 -62 -65 -68 50 100 150 200 250 300 350 400 450 500 550 Fs (Msps) Figure 9-7. THD Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2) -50 THD (dBc) -52 -54 -56 -58 -60 50 100 150 200 250 300 350 400 450 500 550 Fs (Msps) 25 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 9-8. SNR Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2) 47 SNR (dBc) 46 45 44 50 100 150 200 250 300 350 400 450 500 550 Fs (Msps) 9.5 Typical Dynamic Performances Versus Input Frequency Figure 9-9. ENOB Versus Input Frequency (Fs = 500 Msps) 7.6 7.5 ENOB (Bit) 7.4 7.3 7.2 7.1 7.0 6.9 6.8 0 100 200 300 400 500 Fin (MHz) Channel I Channel Q Figure 9-10. SFDR Versus Input Frequency (Fs = 500 Msps) -54 -55 SFDR (dBc) -56 -57 -58 -59 -60 0 100 200 300 400 500 Fin (MHz) Channel I Channel Q 26 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 9-11. THD Versus Input Frequency (Fs = 500 Msps) -50 -51 THD (dBc) -52 -53 -54 -55 -56 -57 -58 0 100 200 300 400 500 Fin (MHz) Channel I Channel Q Figure 9-12. SNR Versus Input Frequency (Fs = 500 Msps) 47 SNR (dBc) 46 45 44 43 42 0 100 200 300 400 500 Fin (MHz) Channel I Channel Q 27 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 9.6 Typical Signal Spectrum Figure 9-13. Fs = 500 Msps and Fin = 20 MHz (1:2 DMUX, Fs/4 DR Type FiSDA = -35 ps, ISA = 0 ps) 20 Fundamental: H1 0 -20 SFDR = -60 dBc dBc -40 H2 H3 -60 H4 -80 -100 -120 0 16 31 47 63 78 94 109 125 141 156 172 188 203 219 234 Fs (Msps) Figure 9-14. Fs = 500 Msps and Fin = 250 MHz (1:2 DMUX, Fs/4 DR Type FiSDA = -35 ps, ISA = 0 ps) 20 Fundamental : H1 0 -20 SFDR = -58 dBc -40 H2 dBc H3 -60 -80 -100 -120 0 16 31 47 63 78 94 109 125 141 156 172 188 203 219 234 Fs (Msps) 28 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 9-15. Fs = 500 Msps and Fin = 500 MHz (1:2 DMUX, Fs/4 DR Type FiSDA = -35 ps, ISA = 0 ps) 20 Fundamental: H1 0 -20 SFDR = -57 dBc H2 -40 dBc H3 -60 -80 -100 -120 0 Note: 16 31 47 63 78 94 109 125 141 156 172 188 203 219 234 Fs (Msps) The spectra are given with respect to the output clock frequency observed by the acquisition system (Figure 9-13 on page 28 to Figure 9-15). Figure 9-16. Fs = 500 Msps and Fin = 250 MHz (Interleaving Mode Fint = 1 Gsps 1:1 DMUX, FiSDA = -35 ps, ISA = 0 ps) 20 Fundamental H1 0 -20 SFDR = -55 dBc dBc -40 -60 -80 -100 -120 0 62 125 187 249 311 374 436 498 Fs (Msps) Fs 29 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 9.7 Typical Performance Sensitivity Versus Power Supplies and Temperature Figure 9-17. ENOB Versus VCCA (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type, ISA = 0 ps) 7.6 ENOB (Bit) 7.4 7.2 7.0 6.8 6.6 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 VCCA (V) Channel I Channel Q Figure 9-18. SFDR Versus VCCA (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type, ISA = 0 ps) -48 -50 SFDR (dBc) -52 -54 -56 -58 -60 -62 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 VCCA (V) Channel I Channel Q 30 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 9-19. THD Versus VCCA (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type, ISA = 0 ps) -48 -49 -50 THD (dBc) -51 -52 -53 -54 -55 -56 -57 -58 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 VCCA (V) Channel I Channel Q Figure 9-20. SNR Versus VCCA (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type, ISA = 0 ps) 46.0 SNR (dBc) 45.0 44.0 43.0 42.0 41.0 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 VCCA (V) Channel I Channel Q 31 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 9-21. ENOB Versus Ambient Temperature (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type) 7.4 500 Msps 20 MHz 500 Msps 250 MHz 7.2 ENOB (Bit) 500 Msps 500 MHz 7.0 6.8 6.6 6.4 -40 -15 10 35 60 85 Tamb (C) Figure 9-22. SFDR Versus Ambient Temperature (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type) -46 -48 -50 SFDR (dBc) -52 -54 -56 500 Msps 500 MHz -58 500 Msps 250 MHz -60 500 Msps 20 MHz -62 -40 -15 10 35 60 85 Tamb (C) 32 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 9-23. THD Versus Ambient Temperature (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type) -48 -50 THD (dBc) -52 -54 500 Msps 500 MHz -56 500 Msps 250 MHz -58 500 Msps 20 MHz -60 -40 -15 10 35 60 85 Tamb (C) Figure 9-24. SNR Versus Ambient Temperature (Fs = 500 Msps, Fin = 250 MHz, 1:2 DMUX, Fs/4 DR Type) 48 47 500 Msps 20 MHz 46 500 Msps 250 MHz SNR (dBc) 45 500 Msps 500 MHz 44 43 42 41 40 -40 -15 10 35 60 85 Tamb (C) 33 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 10. Test and Control Features 10.1 3-wire Serial Interface Control Setting Table 10-1. 3-wire Serial Interface Control Settings Mode Characteristics Mode = 1 (2.25V) 3-wire serial bus interface activated Mode = 0 (0V) 3-wire serial bus interface deactivated Nominal setting: Dual channel I and Q activated One clock I 0 dB gain DMUX mode 1:1 DRDA I & Q = 0 ps ISA I & Q = 0 ps FiSDA Q = 0 ps Binary output Decimation test mode OFF Calibration setting OFF Data Ready = Fs /2 34 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 10.1.1 3-wire Serial Interface and Data Description The 3-wire bus is activated with the control bit mode set to 1. The length of the word is 19 bits: 16 for the data and 3 for the address. The maximum clock frequency is 50 MHz. Table 10-2. 3-wire Serial Interface Address Setting Description Address Setting 000 Standby Gray/binary mode 1:1 or 1:2 DMUX mode Analog input MUX Clock selection Auto-calibration Decimation test mode Data Ready Delay Adjust 001 Analog gain adjustment Data7 to Data0: gain channel I Data15 to Data8: gain channel Q Code 00000000: -1.5 dB Code 10000000: 0 dB Code 11111111: 1.5 dB Steps: 0.011 dB 010 Offset compensation Data7 to Data0: offset channel I Data15 to Data8: offset channel Q Data7 and Data15: sign bits Code 11111111b: 31.75 LSB Code 10000000b: 0 LSB Code 00000000b: 0 LSB Code 01111111b: -31.75 LSB Steps: 0.25 LSB Maximum correction: 31.75 LSB 011 Gain compensation Data6 to Data0: channel I/Q (Q is matched to I) Code 11111111b: -0.315 dB Code 10000000b: 0 dB Code 0000000b: 0 dB Code 0111111b: 0.315 dB Steps: 0.005 dB Data6: sign bit 100 Internal Settling Adjustment (ISA) Data2 to Data0: channel I Data5 to Data3: channel Q Data15 to Data6: 1000010000 35 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 10-2. 3-wire Serial Interface Address Setting Description (Continued) Address Setting 101 Testability Data3 to Data0 = 0000 Mode S/H transparent ....... ......OFF: Data4 = 0 Data7 = 0 Data8 = 0 110 Built-In Test (BIT) Data0 = 0 ...... BIT Inactive... Data0 = 1 BIT Active Data1 = 0 ...... Static BIT...... Data1 = 1 Dynamic BIT If Data1 = 1, then Ports BI & BQ = Rising Ramp ...... Ports AI & AQ = Decreasing Ramp If Data1 = 0, then Data2 to Data9 = Static Data for BIT ...... Ports BI & BQ = Data2 to Data9 ...... Ports AI & AQ = NOT (Data2 to Data9) ON: Data4 = 1 Data Ready Delay Adjust (DRDA) Data2 to Data0: clock I Data5 to Data3: clock Q Steps: 140 ps 000: -560 ps 100: 0 ps 111: 420 ps 111 Notes: Fine Sampling Delay Adjustment (FiSDA) on channel Q Data10 to Data6: channel Q Steps: 8 ps Data4: sign bit Code 11000 : -64 ps Code 10000: 0 ps Code 00000: 0 ps Code 01111: 120 ps 1. The Internal Settling Adjustment could change independently of the two analog sampling times (TA channels I and Q) of the sample/hold (with a fixed digital sampling time) with steps of 50 ps: Nominal mode will be given by Data2...Data0 = 100 or Data5...Data3 = 100. Data5...Data3 = 000 or Data2...Data0 = 000: sampling time is -200 ps compared to nominal. Data2...Data0 = 111 or Data5...Data3 = 111: sampling time is 150 ps compared to nominal. We recommend setting the ISA to 0 ps to optimize the ADC's dynamic performances. 2. The Fine Sampling Delay Adjustment enables you to change the sampling time (steps of 5 ps) on channel Q more precisely, particularly in the interleaved mode. 3. The "S/H transparent" mode (address 101, Data4) enables bypassing of the ADC's track/hold. This function optimizes the ADC's performances at very low input frequencies (Fin < 50 MHz). 4. In the Gray mode, when the input signal is overflow (that is, the differential analog input is greater than 250 mV), the output data must be corrected using the output DOIR: If DOIR = 1: Data7 unchanged Data6 = 0, Data5 = 0, Data4 = 0, Data3 = 0, Data2 = 0, Data1 = 0, Data0 = 0. In 1:2 DMUX mode, only one out-of-range bit is provided for both A and B ports. 5. With DRDA adjustment, you can shift the Output clock signal (shift the falling and rising edges) from -560 to +420 ps around its default value. 36 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 10-3. 3-wire Serial Interface Data Setting Description D15 D14 D13 D12 D11 D10 D9(1) D8 D7 D6 D5 D4 D3 D2 D1 D0 X X X X X X 0 X X X X X X X 1 1 X X X X X X 0 X X X X X X X 0 1 X X X X X X 0 X X X X X X X 1 0 No standby mode X X X X X X 0 X X X X X X X 0 0 Binary output mode X X X X X X 0 X X X X X X 1 X X Gray output mode X X X X X X 0 X X X X X X 0 X X DMUX 1:2 mode X X X X X X 0 X X X X X 1 X X X DMUX 1:1 mode X X X X X X 0 X X X X X 0 X X X Analog selection mode Input I ADC I Input Q ADC Q X X X X X X 0 X X X 1 1 X X X X Analog selection mode Input I ADC I Input I ADC Q X X X X X X 0 X X X 1 0 X X X X Analog selection mode Input Q ADC I Input Q ADC Q X X X X X X 0 X X X 0 X X X X X Clock Selection mode CLKI ADC I CLKQ ADC Q X X X X X X 0 X 1 1 X X X X X X Clock selection mode CLKI ADC I CLKI ADC Q X X X X X X 0 X 1 0 X X X X X X Clock selection mode CLKI ADC I CLKIN ADC Q X X X X X X 0 X 0 X X X X X X X Decimation OFF mode X X X X X X 0 0 X X X X X X X X Decimation ON mode X X X X X X 0 1 X X X X X X X X Keep last calibration calculated value(4) No calibration phase X X X X 0 1 0 X X X X X X X X X No calibration phase(5) No calibration value X X X X 0 0 0 X X X X X X X X X X X X X 1 1 0 X X X X X X X X X X X a b X X 0 X X X X X X X X X In 1:2 DMUX FDataReady I & Q = Fs/2 X 0 X X X X 0 X X X X X X X X X In 1:2 DMUX FDataReady I & Q = Fs/4 X 1 X X X X 0 X X X X X X X X X Setting for Address: 000 Full standby mode Standby channel I (2) Standby channel Q (3) Start a new calibration phase Control wait bit calibration Notes: (6) 1. D9 must be set to "0" 2. Mode standby channel I: use analog input I Vini, Vinib and Clocki. 37 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 3. Mode standby channel Q: use analog input Q Vinq, Vinqb and Clockq. 4. Keep last calibration calculated value - no calibration phase: D11 = 0 and D10 = 1. No new calibration is required. The values taken into account for the gain and offset are either from the last calibration phase or are default values (reset values). 5. No calibration phase - no calibration value: D11 = 0 and D10 = 0. No new calibration phase is required. The gain and offset compensation functions can be accessed externally by writing in the registers at address 010 for the offset compensation and at address 011 for the gain compensation. 6. The control wait bit gives the possibility to change the internal setting for the auto-calibration phase: For high clock rates (= 500 Msps) use a = b = 1. For clock rates > 250 Msps and < 500 Msps use a = 1 and b = 0. For clock rates > 125 Msps and < 250 Msps use a = 0 and b = 1. For low clock rates < 125 Msps use a = 0 and b = 0. 7. When Channel I is in standby (D1 = 0, D0 = 1), the following modes are forbidden: -Clock I: I & Q (D7 = 1, D6 = 0) -Clock I: I & Clock IN: Q (D7 = 0, D6 = X) 8. If the partial standby mode is necessary in an application, we highly recommend to use the "Standby Q" function and apply the clock signal on channel I instead of using the "Standby I" function and using the clock Q signal; 10.1.2 3-wire Serial Interface Timing Description The 3-wire serial interface is a synchronous write-only serial interface made of three wires: * sclk: serial clock input * sldn: serial load enable input * sdata: serial data input The 3-wire serial interface gives write-only access to as many as 8 different internal registers of up to 16 bits each. The input format is always fixed with 3 bits of register address followed by 16 bits of data. The data and address are entered with the Most Significant Bit (MSB) first. The write procedure is fully synchronous with the rising clock edge of "sclk" and described in the write chronogram (Figure 10-1 on page 39). * "sldn" and "sdata" are sampled on each rising clock edge of "sclk" (clock cycle). * "sldn" must be set to 1 when no write procedure is performed. * A minimum of one rising clock edge (clock cycle) with "sldn" at 1 is required for a correct start of the write procedure. * A write starts on the first clock cycle with "sldn" at 0. "sldn" must stay at 0 during the complete write procedure. * During the first 3 clock cycles with "sldn" at 0, 3 bits of the register address from MSB (a[2]) to LSB (a[0]) are entered. * During the next 16 clock cycles with "sldn" at 0, 16 bits of data from MSB (d[15]) to LSB (d[0]) are entered. * An additional clock cycle with "sldn" at 0 is required for parallel transfer of the serial data d[15:0] into the addressed register with address a[2:0]. This yields 20 clock cycles with "sldn" at 0 for a normal write procedure. * A minimum of one clock cycle with "sldn" returned at 1 is requested to close the write procedure and make the interface ready for a new write procedure. Any clock cycle where "sldn" is at 1 before the write procedure is completed interrupts this procedure and no further data transfer to the internal registers is performed. * Additional clock cycles with "sldn" at 0 after the parallel data transfer to the register (done at the 20th consecutive clock cycle with "sldn" at 0) do not affect the write procedure and are ignored. 38 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B It is possible to have only one clock cycle with "sldn" at 1 between two following write procedures. * 16 bits of data must always be entered even if the internal addressed register has less than 16 bits. Unused bits (usually MSBs) are ignored. Bit signification and bit positions for the internal registers are detailed in Table 10-2 on page 35. To reset the registers, the Pin mode can be used as a reset pin for chip initialization, even when the 3wire serial interface is used. Figure 10-1. Write Chronogram Mode 1 2 3 4 a[1] a[0] d[15] 5 13 14 15 16 17 18 19 d[1] d[0] 20 sclk sldn sdata Internal register value a[2] d[8] d[7] d[6] d[5] d[4] d[3] d[2] New d Reset setting Reset Write procedure Figure 10-2. Timing Definition Twlmode Mode Tsclk Twsclk Tdmode Tdmode sclk Tssldn Thsldn Tssdata Thsdata sldn sdata Table 10-4. Timing Description Value Name Parameter Min Typ Max Unit Tsclk Sclk period 20 ns Twsclk High or low time of sclk 5 ns Tssldn Setup time of sldn before rising edge of sclk 4 ns Thsldn Hold time of sldn after rising edge of sclk 2 ns Tssdata Setup time of sdata before rising edge of sclk 4 ns Thsdata Hold time of sdata after rising edge of sclk 2 ns Twlmode Minimum low pulse width of mode 5 ns Tdmode Minimum delay between an edge of mode and the rising edge of sclk 10 ns 39 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 10.1.3 Calibration Description The AT84AD004B offers the possibility of reducing offset and gain matching between the two ADC cores. An internal digital calibration may start right after the 3-wire serial interface has been loaded (using data D12 of the 3-wire serial interface with address 000). The beginning of calibration disables the two ADCs and a standard data acquisition is performed. The output bit CAL goes to a high level during the entire calibration phase. When this bit returns to a low level, the two ADCs are calibrated with offset and gain and can be used again for a standard data acquisition. If only one channel is selected (I or Q) the offset calibration duration is divided by two and no gain calibration between the two channels is necessary. Figure 10-3. Internal Timing Calibration 3-wire Serial Interface LDN CAL Tcal The Tcal duration is a multiple of the clock frequency ClockI (master clock). Even if a dual clock scheme is used during calibration, ClockQ will not be used. The control wait bits (D13 and D14) give the possibility of changing the calibration's setting depending on the clock's frequency: * For high clock rates (= 500 Msps) use a = b = 1, Tcal = 10112 clock I periods. * For clock rates > 250 Msps and < 500 Msps use a = 1, b = 0, Tcal = 6016 clock I periods. * For clock rates > 125 Msps and < 250 Msps use a = 0, b = 1 ,Tcal = 3968 clock I periods. * For low clock rates (< 125 Msps) use a = 0, b = 0 , Tcal = 2944 clock I periods. The calibration phase is necessary when using the AT84AD004B in interleaved mode, where one analog input is sampled at both ADC cores on the common input clock's rising and falling edges. This operation is equivalent to converting the analog signal at twice the clock frequency Table 10-5. Matching Between Channels Value Parameter Min Gain error (single channel I or Q) without calibration Gain error (single channel I or Q) with calibration -2 0 -2 0 Unit % 2 0 Mean offset code without calibration (single channel I or Q) Mean offset code with calibration (single channel I or Q) Max 0 Offset error (single channel I or Q) without calibration Offset error (single channel I or Q) with calibration Typ % LSB 2 LSB 127.5 126 127.5 129 40 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B During the ADC's auto-calibration phase, the dual ADC is set with the following: * Decimation mode ON * 1:1 DMUX mode * Binary mode Any external action applied to any signal of the ADC's registers is inhibited during the calibration phase. 10.1.4 Gain and Offset Compensation Functions It is also possible for the user to have external access to the ADC's gain and offset compensation functions: * Offset compensation between I and Q channels (at address 010) * Gain compensation between I and Q channels (at address 011) To obtain manual access to these two functions, which are used to set the offset to middle code 127.5 and to match the gain of channel Q with that of channel I (if only one channel is used, the gain compensation does not apply), it is necessary to set the ADC to "manual" mode by writing 0 at bits D11 and D10 of address 000. 10.1.5 Built-in Test (BIT) A Built-in Test (BIT) function is available to allow rapid testing of the device's I/O by either applying a defined static pattern to the ADC or by generating a dynamic ramp at the ADC's output. This function is controlled via the 3-wire bus interface at address 101. * The BIT is active when Data0 = 1 at address 110. * The BIT is inactive when Data0 = 0 at address 110. * The Data1 bit allows choosing between static mode (Data1 = 0) and dynamic mode (Data1 = 1). When the static BIT is selected (Data1 = 0), it is possible to write any 8-bit pattern by defining the Data9 to Data2 bits. Port B then outputs an 8-bit pattern equal to Data9 ... Data2, and Port A outputs an 8-bit pattern equal to NOT (Data9 ... Data2). Example: Address = 110 Data = D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 X X X X X X 0 1 0 1 0 1 0 1 0 1 One should then obtain 01010101 on Port B and 10101010 on Port A. When the dynamic mode is chosen (Data1 = 1) port B outputs a rising ramp while Port A outputs a decreasing one. Note: 10.1.6 In dynamic mode, use the DRDA function to align the edges of CLKO with the middle of the data. Decimation Mode The decimation mode is provided to enable rapid testing of the ADC. In decimation mode, one data out of 16 is output, thus leading to a maximum output rate of 31.25 Msps. Note: Frequency (CLKO) = frequency (Data) = Frequency (CLKI)/16. 41 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 10.2 Die Junction Temperature Monitoring Function A die junction temperature measurement setting is included on the board for junction temperature monitoring. The measurement method forces a 1 mA current into a diode-mounted transistor. Caution should be given to respecting the polarity of the current. In any case, one should make sure the maximum voltage compliance of the current source is limited to a maximum of 1V or use a resistor serial-mounted with the current source to avoid damaging the transistor device (this may occur if the current source is reverse-connected). The measurement setup is illustrated in Figure 10-4. Figure 10-4. Die Junction Temperature Monitoring Setup VDiode (Pin 35) 1 mA GNDD (Pin 36) Protection Diodes The VBE diode's forward voltage in relation to the junction temperature (in steady-state conditions) is shown in Figure 10-5. Figure 10-5. Diode Characteristics Versus TJ 860 840 820 Diode Voltage (mV) 800 780 760 740 720 700 680 660 640 620 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 Junction Temperature (C) 10.3 VtestI, VtestQ VtestI and VtestQ pins are for internal test use only. These two signals must be left open. 42 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 11. Equivalent Input/Output Schematics Figure 11-1. Simplified Input Clock Model VCCD CLKI or CLKQ 100 50 VCCD/2 50 100 CLKIN or CLKQN GNDD Figure 11-2. Simplified Data Ready Reset Buffer Model VCCD DDRB 100 50 VCCD/2 50 100 DDRBN GNDD 43 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 11-3. Analog Input Model Vcca Vcca DC Coupling (Common Mode = Ground = 0V) Vinl Reverse Termination 50 Sel Input I ESD GND VinI VinI Double Pad GND - 0.4V MAX ESD GND 50 VinQ Reverse Termination GND GND VinQ VinQ Double Pad Sel Input Q Figure 11-4. Data Output Buffer Model VCCO DOAIO, DOAI7 DOBIO, DOBI7 DOAION, DOAI7N DOBION, DOBI7N GNDO 44 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 12. Definitions of Terms Table 12-1. Definitions of Terms Abbreviation Definition Description BER Bit Error Rate The probability of an error occurring on the output at a maximum sampling rate. DNL Differential Non-Linearity The differential non-linearity for an output code i is the difference between the measured step size of code i and the ideal LSB step size. DNL (i) is expressed in LSBs. DNL is the maximum value of all DNL (i). A DNL error specification of less than 1 LSB guarantees that there are no missing output codes and that the transfer function is monotonic ENOB Effective Number of Bits A SINAD - 1.76 + 20 log ----------- Where A is the actual input amplitude and Fs is the full Fs/2 ENOB = ----------------------------------------------------------------------------- scale range of the ADC under test 6.02 FPBW Full Power Input Bandwidth The analog input frequency at which the fundamental component in the digitally reconstructed output waveform has fallen by 3 dB with respect to its low frequency value (determined by FFT analysis) for input at full-scale -1 dB (-1 dBFS) IMD Inter-Modulation Distortion The two tones intermodulation distortion (IMD) rejection is the ratio of either of the two input tones to the worst third order intermodulation products INL Integral Non-Linearity The integral non-linearity for an output code i is the difference between the measured input voltage at which the transition occurs and the ideal value of this transition. INL (i) is expressed in LSBs and is the maximum value of all |INL (i)| JITTER Aperture uncertainty The sample-to-sample variation in aperture delay. The voltage error due to jitters depends on the slew rate of the signal at the sampling point NPR Noise Power Ratio The NPR is measured to characterize the ADC's performance in response to broad bandwidth signals. When applying a notch-filtered broadband white noise signal as the input to the ADC under test, the Noise Power Ratio is defined as the ratio of the average out-of-notch to the average in-notch power spectral density magnitudes for the FFT spectrum of the ADC output sample test ORT Overvoltage Recovery Time The time to recover a 0.2% accuracy at the output, after a 150% full-scale step applied on the input is reduced to midscale PSRR Power Supply Rejection Ratio The ratio of input offset variation to a change in power supply voltage SFDR Spurious Free Dynamic Range The ratio expressed in dB of the RMS signal amplitude, set at 1 dB below full-scale, to the RMS value of the highest spectral component (peak spurious spectral component). The peak spurious component may or may not be a harmonic. It may be reported in dB (related to the converter -1 dB full-scale) or in dBc (related to the input signal level) SINAD Signal to Noise and Distortion Ratio The ratio expressed in dB of the RMS signal amplitude, set to 1 dB below full-scale (-1 dBFS) to the RMS sum of all other spectral components including the harmonics, except DC SNR Signal to Noise Ratio The ratio expressed in dB of the RMS signal amplitude, set to 1 dB below full-scale, to the RMS sum of all other spectral components excluding the first 9 harmonics SSBW Small Signal Input Bandwidth The analog input frequency at which the fundamental component in the digitally reconstructed output waveform has fallen by 3 dB with respect to its low frequency value (determined by FFT analysis) for input at full-scale -10 dB (-10 dBFS) TA Aperture delay The delay between the rising edge of the differential clock inputs (CLKI, CLKIN) [zero crossing point] and the time at which VIN and VINB are sampled TC Encoding Clock period TC1 = minimum clock pulse width (high) TC = TC1 + TC2 TC2 = minimum clock pulse width (low) TD1 Time delay data to clock Time delay between Data transition (Port A or B) channel I or Q to Output Clock CLKXO (channel I or Q) TD2 Time delay clock to data Time delay between Output Clock CLKXO (channel I or Q) to Data transition (Port A or B) channel I or Q If Output Clock CLKXO is in the middle to data TD1 = Tdata/2 If Output Clock CLKXO is in the middle to data TD2 = Tdata/2 45 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table 12-1. Abbreviation Definitions of Terms (Continued) Definition Description This difference TD1-TD2 gives an information if Output Clock CLKXO (channel I or Q) is centered on the output data If Output Clock CLKXO is in the middle to data TD2=TD1=Tdata/2 TD1-TD2 TDO Digital Data Output Delay The delay from the rising edge of the differential clock inputs (CLKI, CLKIN) [zero crossing point] to the next point of change in the differential output data (zero crossing) with a specified load TDR Data Ready Output Delay The delay from the falling edge of the differential clock inputs (CLKI, CLKIN) [zero crossing point] to the next point of change in the differential output data (zero crossing) with a specified load TF Fall Time The time delay for the output data signals to fall from 20% to 80% of delta between the low and high levels THD Total Harmonic Distortion The ratio expressed in dB of the RMS sum of the first 9 harmonic components to the RMS input signal amplitude, set at 1 dB below full-scale. It may be reported in dB (related to the converter -1 dB full-scale) or in dBc (related to the input signal level ) TPD Pipeline Delay The number of clock cycles between the sampling edge of an input data and the associated output data made available (not taking into account the TDO) TR Rise Time The time delay for the output data signals to rise from 20% to 80% of delta between the low and high levels TRDR Data Ready Reset Delay The delay between the falling edge of the Data Ready output asynchronous reset signal (DDRB) and the reset to digital zero transition of the Data Ready output signal (DR) TS Settling Time The time delay to rise from 10% to 90% of the converter output when a full-scale step function is applied to the differential analog input VSWR Voltage Standing Wave Ratio The VSWR corresponds to the ADC input insertion loss due to input power reflection. For example, a VSWR of 1.2 corresponds to a 20 dB return loss (99% power transmitted and 1% reflected) 46 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 13. Using the AT84AD004B Dual 8-bit 500 Msps ADC 13.1 Decoupling, Bypassing and Grounding of Power Supplies The following figures show the recommended bypassing, decoupling and grounding schemes for the dual 8-bit 500 Msps ADC power supplies. Figure 13-1. VCCD and VCCA Bypassing and Grounding Scheme L PC Board 3.3V VCCD L 1F VCCA 100 pF PC Board GND C C Figure 13-2. VCCO Bypassing and Grounding Scheme L VCCO PC Board 2.25V 1F 100 pF PC Board GND C Note: L and C values must be chosen in accordance with the operating frequency of the application. Figure 13-3. Power Supplies Decoupling Scheme VCCA VCCA 100 pF 10 nF GNDA GNDA GNDO VCCD VCCO VCCO 100 pF 10 nF GNDO 100 pF 10 nF GNDD Note: The bypassing capacitors (1 F and 100 pF) should be placed as close as possible to the board connectors, whereas the decoupling capacitors (100 pF and 10 nF) should be placed as close as possible to the device. 47 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 13.2 Analog Input Implementation The analog inputs of the dual ADC have been designed with a double pad implementation as illustrated in Figure 13-4. The reverse pad for each input should be tied to ground via a 50 resistor. The analog inputs must be used in differential mode only. Figure 13-4. Termination Method for the ADC Analog Inputs in DC Coupling Mode 50 VinI VinI 50 Source Channel I VinIB GND 50 VinIB Dual ADC 50 VinQ VinQ 50 Source Channel Q VinQB GND 50 VinQB 48 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 13-5. Termination Method for the ADC Analog Inputs in AC Coupling Mode 50 VinI 50 Source VinI Channel I GND VinIB GND 50 VinIB Dual ADC 50 VinQ 50 Source VinQ Channel Q GND VinQB GND 50 VinQB 13.3 Clock Implementation The ADC features two different clocks (I or Q) that must be implemented as shown in Figure 13-6. Each path must be AC coupled with a 100 nF capacitor. Figure 13-6. Differential Termination Method for Clock I or Clock Q ADC Package CLKI or CLKQ 50 VCCD/2 100 nF CLKIN or CLKQN Note: 50 Differential Buffer 100 nF When only clock I is used, it is not necessary to add the capacitors on the CLKQ and CLKQN signal paths; they may be left floating. DDRB may be implemented as described in the following figure. A pull-up resistor is implemented to maintain the DDRB signal inactive in normal mode. The Data Ready Reset command (it may be a pulse) is active on the high level. 49 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 13-7. Single-ended Termination Method for Clock I or Clock Q VCC AC coupling Capacitor CLKI or CLKQ 50 Source 4.2 K 50 50 AC coupling Capacitor 4.2 K CLKIN or CLKQN 50 VCCD/2 13.4 Reset Implementation DDRB may be implemented as described in the following figure. A pull-up resistor is implemented to maintain the DDRB signal inactive in normal mode. The Data Ready Reset command (it might be a pulse) is active on the high level. Figure 13-8. Reset Implementation DDRB inactive R = 1.4 K DDRB DDRB C = 100 nF DDRBN DDRBN R = 1.5 K VCCD Note: The external pull up and pull down resistors are needed to bias the differential pair in AC coupling. They are of no use in DC coupling (when used with an LVDS driver). 50 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 13.5 Output Termination in 1:1 Ratio When using the integrated DMUX in 1:1 ratio, the valid port is port A. Port B remains unused. Port A functions in LVDS mode and the corresponding outputs (DOAI or DOAQ) have to be 100 differentially terminated as shown in Figure 13-9 on page 51. The pins corresponding to Port B (DOBI or DOBQ pins) must be left floating (in high impedance state). Figure 13-9 is an example of a 1:1 ratio of the integrated DMUX for channel I (the same applies to channel Q). Figure 13-9. Example of Termination for Channel I Used in DMUX 1:1 Ratio (Port B Unused) DOBI0 / DOBI0N DOBI1 / DOBI1N DOBI2 / DOBI2N Port B DOBI3 / DOBI3N Floating (High Z) DOBI4 / DOBI4N DOBI5 / DOBI5N DOBI6 / DOBI6N DOBI7 / DOBI7N Dual ADC Package DOAI0 / DOAI0N DOAI1 / DOAI1N VCCO DOAI2 / DOAI2N DOAI3 / DOAI3N Port A DOAI4 / DOAI4N DOAI5 / DOAI5N DOAI0 Z0 = 50 DOAI0N Z0 = 50 LVDS In DOAI6 / DOAI6N DOAI7 / DOAI7N 100 LVDS In Note: If the outputs are to be used in single-ended mode, it is recommended that the true and false signals be terminated with a 50 resistor. 51 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 13.6 Using the Dual ADC With and ASIC/FPGA Load Figure 13-10 on page 52 illustrates the configuration of the dual ADC (1:2 DMUX mode, independent I and Q clocks) driving an LVDS system (ASIC/FPGA) with potential additional DMUXes used to halve the speed of the dual ADC outputs. Figure 13-10. Dual ADC and ASIC/FPGA Load Block Diagram Data rate = FsI/2 Port A Channel I DEMUX 8 :16 Data rate = FsQ/2 Data rate = FsQ/4 CLKI/CLKIN @ FsI Dual 8-bit 1 Gsps ADC Port A Channel Q DMUX 8 :16 ASIC / FPGA Port B Channel I DMUX 8 :16 CLKQ/CLKQN @ FsQ Port B DMUX 8 :16 Channel Q Note: The demultiplexers may be internal to the ASIC/FPGA system. 52 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 14. Thermal Characteristics 14.1 Simplified Thermal Model for LQFP 144 (20 x 20 x 1.4 mm) The following model has been extracted from the ANSYS FEM simulations. Assumptions: no air, no convection and no board. Figure 14-1. Simplified Thermal Model for LQFP Package Silicon Junction 355 m silicon die 25 mm 2 = 0.95W/cm/C 0.6C/watt 40 m Epoxy/Ag glue = 0.02 W/cm/C 1.4C/watt Copper paddle = 2.5W/cm/C Package top Resin = 0.007W/cm/C 0.1C/watt 6.1C/watt 1.5C/watt 5.5C/watt Leads tip Aluminium paddle Resin Copper alloy leadframe = 0.007W/cm/C = 25W/cm/C Aluminium paddle = 0.75W/cm/C 0.1C/watt Resin bottom = 0.007W/cm/C 4.3C/watt Package bottom Assumptions: Die 5.0 x 5.0 = 25 mm 2 40 m thick Epoxy/Ag glue 8.3C/watt 100 m air gap = 0.00027W/cm/C 11.4C/watt Package bottom connected to: 100 m thermal grease gap diamater 12 mm = 0.01W/cm/C (user dependent) Top of user board 1.5C/watt Note: The above are typical values with an assumption of uniform power dissipation over 2.5 x 2.5 mm2 of the top surface of the die. 14.1.0.1 Thermal Resistance from Junction to Bottom of Leads Assumptions: no air, no convection and no board. The thermal resistance from the junction to the bottom of the leads is 15.2 C/W typical. 14.1.0.2 Thermal Resistance from Junction to Top of Case Assumptions: no air, no convection and no board. The thermal resistance from the junction to the top of the case is 8.3 C/W typical. 14.1.0.3 Thermal Resistance from Junction to Bottom of Case Assumptions: no air, no convection and no board. The thermal resistance from the junction to the bottom of the case is 6.4 C/W typical. 53 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 14.1.0.4 Thermal Resistance from Junction to Bottom of Air Gap The thermal resistance from the junction to the bottom of the air gap (bottom of package) is 17.9 C/W typical. 14.1.0.5 Thermal Resistance from Junction to Ambient The thermal resistance from the junction to ambient is 25.2 C/W typical. Note: In order to keep the ambient temperature of the die within the specified limits of the device grade (that is Tamb max = 70C in commercial grade and 85C in industrial grade) and the die junction temperature below the maximum allowed junction temperature of 105C, it is necessary to operate the dual ADC in air flow conditions (1m/s recommended). In still air conditions, the junction temperature is indeed greater than the maximum allowed TJ. - TJ = 25.2C/W x 1.4W + Tamb = 35.28 + 70 = 105.28C for commercial grade devices - TJ = 25.2C/W x 1.4W + Tamb = 35.28 + 85 = 125.28C for industrial grade devices 14.1.0.6 14.2 14.2.1 Thermal Resistance from Junction to Board The thermal resistance from the junction to the board is 13 C/W typical. LQFP-ep 144L Green Package Thermal Characteristics Thermal Resistance from Junction to Ambient Simulations (JEDEC JESD51 standard) were held with the following assumptions: * Board with 76.2 mm x 114.3 mm dimensions * Still air * Exposed pad (5.8 x 5.8 mm) soldered to the board The thermal resistance from the junction to ambient is 25.0 C/W. Note: 14.2.2 When the exposed pad is not soldered to the board, the Rthj-a becomes 58.8C/W. Exposed Pad Board layout Recommendation This recommendation is done for the AT84AD004BXEPW (LQFP-ep 144L green package). Electrical contact of the part to the Printed Circuit Board (PCB) is made by soldering the leads on the bottom surface of the package to the PCB. Hence; special attention is require to the heat transfer below the package to provide a good thermal bond to the PCB. A Copper (Cu) fill is to be designed into PCB as a thermal pad under the package. Heat from devices, is conducted to the PCB at the thermal pad. It is then conducted from the thermal pad to the PCB inner ground plane by a 6.5 array of via. The LQFP metal died paddle must be soldered to the PCB's thermal pad. Solder mask is placed on the board top side over each via to resist solder flow into the via. The diameter of solder Mask needs to be higher than diameter of via (diameter of via+ 0.2 mm) The diameter of solder Mask is 0.3 mm + 0.1 mm + 0.1 mm = 0.5 mm) The Solder Paste template needs to de designed to allow at least 50% solder coverage. The Solder Paste is place between the balls (diamond area) and not covers all the copper. 54 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 6.5 mm Via. 6.5 mm 6.5 mm 0.3 mm, typ. 6.5 mm To GND 0.5 mm, typ. 6.5 mm 6.5 mm 1.25 mm, typ. Solder Mask Copper + Via (White area) Solder Paste Mask (Grey Area) The thermal via is connect to inner layer (GND layer) with complete connection. 55 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 15. Ordering Information Table 15-1. Ordering Information Part Number Package Temperature Range Screening Comments AT84AD004BCTD LQFP 144 C grade 0 C < Tamb < 70 C Standard Please contact your local sales office AT84AD004BVTD LQFP 144 V grade -40 C < Tamb < 85 C Standard Please contact your local sales office AT84XAD004BEPW LQFP-ep 144L green (RoHS compliant) Ambient Prototype AT84AD004BCEPW LQFP-ep 144L green (RoHS compliant) C grade 0 C < Tamb < 70 C Standard AT84AD004BVEPW LQFP-ep 144L green (RoHS compliant) V grade -40 C < Tamb < 8 5 C Standard AT84AD004TD-EB LQFP 144 Ambient Prototype Evaluation kit 56 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 16. Packaging Information Figure 16-1. LQFP 144 Package N Dims. A A1 A2 D D1 E E1 L e b ddd ccc o 1 B E1 A E Notes: D D1 Body +2.00 mm footprint Tols. Leads 144L max. 1.60 0.05 min./0.15 max. +/- 0.05 1.40 +/-0.20 22.00 +/-0.10 20.00 +/-0.20 22.00 +/-0.10 20.00 +0.15/-0.10 0.60 basic 0.50 +/-0.05 0.22 0.08 max. 0.08 o 0 o- 5 1. All dimensions are in millimeters 2. Dimensions shown are nominal with tolerances as indicated 3. L/F: eftec 64T copper or equivalent 4. Foot length: "L" is measured at gauge plane at 0.25 mm above the seating plane D 12 o TYP. A2 e A1 A 12 o TYP. 0.20 RAD max. 0.20 RAD nom. 6o A C Stand off A1 0.25 Seating plane C Lead coplanarity 0 0.17 max b L Note: + 4o - ddd e c A-B e De ccc c Thermally enhanced package: LQFP 144, 20 x 20 x 1.4 mm. 57 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Figure 16-2. LQFP-ep 144L Green Package PIN 1 1 144 D 7.000 REF. D D1 H REF. (4X) 14.000 REF. D 19.9000.100 20.0000.100 (D1) 5.800 REF. 14.000 REF. B X (4X) 19.9000.100 Y bbb H A-B E EXPOSED PAD AREA D SEATING PLANE b b1 SECTION N-N C T1 b e ddd C A-B D DETAIL Y DETAIL X C0.800X45 (4X) L 0.20 00~ H 0 N N R0.100~0.200 R0.1 0.200 Min. L1 0 Min. R0.300 TYP ALL AROUND a A C A-B 12 ALL AROUND 12 ALL AROUND 1 144 C ccc . (4X) aaa BACK PIN 1 A2 A1 E1 5.800 REF. 14.000 REF. 14.000 REF. 20.0000.100 (E1) A T 0.250 BASE GAGE PLANE 58 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B DIMENSION LIST ( FOOTPRINT: 2.00) S/N SYM DIMENSIONS 1 A MAX. 1.600 OVERALL HEIGHT 2 A1 0.1000.050 STANDOFF 3 A2 1.4000.050 PKG THICKNESS 4 D 22.0000.200 LEAD TIP TO TIP 5 D1 20.0000.100 PKG LENGTH 6 E 22.0000.200 LEAD TIP TO TIP 7 E1 20.0000.100 PKG WIDTH 8 L 0.6000.150 FOOT LENGTH 9 L1 1.000 REF. LEAD LENGTH 10 T 0.150-0.060 LEAD THICKNESS 11 T1 LEAD BASE METAL THICKNESS 12 a 0.1270.030 0~7 13 b LEAD WIDTH 14 b1 0.2200.050 0.2000.030 15 16 e H (REF.) 0.500 BASE (17.500) LEAD PITCH CUM. LEAD PITCH 17 aaa bbb 0.200 0.200 PROFILE OF LEAD TIPS 18 19 ccc 0.080 FOOT COPLANARITY 20 ddd 0.080 FOOT POSITION REMARKS +0.050 FOOT ANGLE LEAD BASE METAL WIDTH PROFILE OF MOLD SURFACE NOTES : S/N DESCRIPTION SPECIFICATION 1 GENERAL TOLERANCE. 2 MATTE FINISH ON PACKAGE BODY SURFACE EXCEPT EJECTION AND PIN 1 MARKING. Ra0.8~2.0um 3 ALL MOLDED BODY SHARP CORNER RADII UNLESS OTHERWISE SPECIFIED. MAX. R0.200 4 PACKAGE/LEADFRAME MISALIGNMENT ( X, Y ): MAX. 0.127 5 TOP/BTM PACKAGE MISALIGNMENT ( X, Y ): MAX. 0.127 6 DRAWING DOES NOT INCLUDE PLASTIC OR METAL PROTRUSION OR CUTTING BURR. 7 COMPLIANT TO JEDEC STANDARD: DISTANCE 0.100 ANGLE 2.5 FOR HIGH DENSITY STRIP LAYOUT MS-026 59 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 60 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B Table of Contents 1 Features .................................................................................................... 1 2 Performance ............................................................................................. 1 3 Application ............................................................................................... 2 4 Description ............................................................................................... 2 5 Functional Description ............................................................................ 2 6 Typical Applications ................................................................................ 4 6.1 Absolute Maximum Ratings ..................................................................................... 5 6.2 Recommended Conditions of Use ...........................................................................6 7 Electrical Operating Characteristics ...................................................... 6 7.1 Timing Diagrams ................................................................................................... 12 7.2 Functions Description ............................................................................................ 19 7.3 Digital Output Coding (Nominal Settings) .............................................................. 20 8 Pin Description ...................................................................................... 20 9 Typical Characterization Results ......................................................... 22 9.1 Typical Full Power Input Bandwidth ...................................................................... 23 9.2 Typical Crosstalk ................................................................................................... 23 9.3 Typical DC, INL and DNL Patterns ........................................................................ 24 9.4 Typical Dynamic Performances Versus Sampling Frequency .............................. 25 9.5 Typical Dynamic Performances Versus Input Frequency ..................................... 26 9.6 Typical Signal Spectrum ........................................................................................ 28 9.7 Typical Performance Sensitivity Versus Power Supplies and Temperature ......... 30 10 Test and Control Features .................................................................... 34 10.1 3-wire Serial Interface Control Setting ................................................................. 34 10.2 Die Junction Temperature Monitoring Function .................................................. 42 10.3 VtestI, VtestQ ...................................................................................................... 42 11 Equivalent Input/Output Schematics ................................................... 43 12 Definitions of Terms .............................................................................. 45 13 Using the AT84AD004B Dual 8-bit 500 Msps ADC ............................. 47 13.1 Decoupling, Bypassing and Grounding of Power Supplies ................................. 47 13.2 Analog Input Implementation ............................................................................... 48 i 0818F-BDC-09/09 e2v semiconductors SAS 2009 AT84AD004B 13.3 Clock Implementation .......................................................................................... 49 13.4 Reset Implementation ......................................................................................... 50 13.5 Output Termination in 1:1 Ratio .......................................................................... 51 13.6 Using the Dual ADC With and ASIC/FPGA Load ................................................ 52 14 Thermal Characteristics ........................................................................ 53 14.1 Simplified Thermal Model for LQFP 144 (20 x 20 x 1.4 mm) .............................. 53 14.2 LQFP-ep 144L Green Package Thermal Characteristics .................................... 54 15 Ordering Information ............................................................................. 56 16 Packaging Information .......................................................................... 57 Table of Contents ..................................................................................... 1 ii 0818F-BDC-09/09 e2v semiconductors SAS 2009 How to reach us Home page: www.e2v.com Sales offices: Europe Regional sales office Americas e2v ltd e2v inc 106 Waterhouse Lane 520 White Plains Road Chelmsford Essex CM1 2QU Suite 450 Tarrytown, NY 10591 England USA Tel: +44 (0)1245 493493 Tel: +1 (914) 592 6050 or 1-800-342-5338, Fax: +44 (0)1245 492492 Fax: +1 (914) 592-5148 mailto: enquiries@e2v.com mailto: enquiries-na@e2v.com e2v sas Asia Pacific 16 Burospace e2v ltd F-91572 Bievres Cedex 11/F., France Onfem Tower, Tel: +33 (0) 16019 5500 29 Wyndham Street, Fax: +33 (0) 16019 5529 Central, Hong Kong mailto: enquiries-fr@e2v.com Tel: +852 3679 364 8/9 Fax: +852 3583 1084 e2v gmbh mailto: enquiries-ap@e2v.com Industriestrae 29 82194 Grobenzell Germany Tel: +49 (0) 8142 41057-0 Fax: +49 (0) 8142 284547 mailto: enquiries-de@e2v.com Product Contact: e2v Avenue de Rochepleine BP 123 - 38521 Saint-Egreve Cedex France Tel: +33 (0)4 76 58 30 00 Hotline: mailto: hotline-bdc@e2v.com Whilst e2v has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice. e2v accepts no liability beyond that set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein. e2v semiconductors SAS 2009 0818F-BDC-09/09 AT84AD004B iv 0818F-BDC-09/09 e2v semiconductors SAS 2009