HAL815UT-K - Micronas - Datasheet.Live

Hardware

Documentation

Programmable Linear

Hall-Effect Sensor

HAL® 815

Edition Nov. 25, 2008

DSH000035_002EN

Data Sheet

HAL815 DATA SHEET

2Nov. 25, 2008; DSH000035_002EN Micronas

The information and data contained in this document

are beli eved to be acc urate and rel iable. The soft ware

and proprietary information contained therein may be

protec ted by copyrig ht, patent, trad emark and/or other

intellectual property rights of Micronas. All rights not

expressly granted remain reserved by Micronas.

Micronas assumes no liability for errors and gives no

warranty representation or guarantee regarding the

suitability of its products for any particular purpose due

to these specifications.

By this publication, Micronas does not assume respon-

sibility for patent infringements or other rights of third

parties which may result from its use. Commercial con-

ditions, product availability and delivery are exclusively

subject to the respective order confirmation.

Any information and data which may be provided in the

document can and do vary in different applications,

and actual performance may vary over time.

All operating parameters must be validated for each

customer application by customers’ technical experts.

Any new issue of this document invalidates previous

issues. Mi cronas reserv es the right to review thi s doc-

ument and to make changes to the document’s content

at any time without obligation to notify any person or

entity of such revision or changes. For further advice

please contact us directly.

Do not use our products in life-supporting systems,

aviation and aerospace applications! Unless explicitly

agreed to otherwise in writing between the parties,

Micronas’ products are not designed, intended or

authorized for use as components in systems intended

for surgical implants into the body, or other applica-

tions intended to support or sustain life, or for any

other application in which the failure of the product

could cr eate a s i tuation where persona l i nj ury o r dea th

could occur.

No part of this publication may be reproduced, photo-

copied, stored on a retrieval system or transmitted

without the express written consent of Micronas.

Micronas Trademarks

–HAL

Micronas Patents

Choppered Offset Compensation protected by

Micronas patents no. US5260614A, US5406202A,

EP0525235B1 and EP0548391B1 Third-Party Trade-

marks

All other brand and product names or company names

may be trademarks of their respective companies.

Contents

Page Section Title

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 3

4 1. Introduction

4 1.1. Maj or Applications

4 1.2. Features

5 1.3. Marking Code

5 1.4. Operating Junction Temperature Range (TJ)

5 1.5. Hall Sensor Package Codes

5 1.6. Soliderability and Welding

5 1.7. Pin Connec tio ns and Shor t Descripti ons

6 2. Functional Description

6 2.1. General Function

8 2.2. Digital Signal Processing and EEPROM

10 2.3. Calibration Procedure

10 2.3.1. General Procedure

11 2.3.2. Calibration of the Angle Sensor

13 3. Specifications

13 3.1. Outline Dimensions

17 3.2. Dimensions of Sensitive Area

17 3.3. Position of Sensitive Areas

17 3.4. Absolute Maximum Ratings

18 3.4.1. Storage and Shelf Life

18 3.5. Recommended Operating Conditions

19 3.6. Characteristics

20 3.7. Magnetic Characteristics

20 3.8. O pen -C ir cu it Dete cti on

20 3.9. Overvoltage and Undervoltage Detection

21 3.10. Typical Characteristics

23 4. Application Notes

23 4.1. A ppl ic ation Cir c uit

23 4.2. Us e of two HAL815 in Parallel

23 4.3. Temperature Compensation

24 4.4. Ambient Temperature

24 4.5. EMC and ESD

25 5. Programming of the Sensor

25 5.1. Definition of Programming Pulses

25 5.2. Definition of the Telegram

27 5.3. Telegram Codes

28 5.4. Number Formats

29 5.5. Register Information

29 5.6. Programming Information

30 6. Data Sheet History

HAL815 DATA SHEET

4Nov. 25, 2008; DSH000035_002EN Micronas

Programmable Linear Hall-Effect Sensor

Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL815 is a member of the Micronas family of

programm able linear Hall sensors. As an extension to

the H AL 8 05, it offers open -circuit, as well as ov ervolt-

age and undervoltage detection. It is possible to pro-

gram different sensors which are in parallel to the

same supply voltage individually.

The HAL815 is an universal magnetic field sensor with

a linear output based on the Hall effect. The IC is

designe d and produce d in sub-micr on CMOS technol-

ogy and can be used for angle or distance measure-

ments if combined with a rotating or moving magnet.

The major characteristics like magnetic field range,

sensitivity, output quiescent voltage (output voltage at

B = 0 mT), and output voltage range are programma-

ble in a non-volatile memory. The sensor has a ratio-

metric output cha racte ristic, whi ch me ans tha t the out-

put volt age i s proportional t o the magnetic flu x a nd th e

supply voltage.

The HAL815 features a temperature-compensated

Hall plat e wit h ch opp er ed offset com pen sation, an A/D

converter, digital signal processing, a D/A converter

with output driver, an EEPROM memory with redun-

dancy and lock function for the calibration data, a

serial interface for programming the EEPROM, and

protection devices at all pins. The internal digital signal

processing is of great benefit because analog offsets,

temperature shifts, and mechanical stress do not

degrade the sensor accuracy.

The HAL815 is pr ogrammable by mod ulating the sup-

ply vo ltage. No additiona l programm ing p in is neede d.

The easy programmability allows a 2-point calibration

by adjusting the output voltage directly to the input sig-

nal (like mechanical angle, distance, or current). Indi-

vidual adjustment of each sensor during the cus-

tomer’s manufacturing process is possible. With this

calibration procedure, the tolerances of the sensor, the

magnet, and the mechanical positioning can be com-

pensated in the final assembly. This offers a low-cost

alternative for all applications that presently need

mechanical adjustment or laser trimming for calibrating

the system.

In addition, the temperature compensation of the Hall

IC can be fi t to all com mon mag netic m aterial s by pro-

gramming first and second order temperature coeffi-

cients of the Ha ll sen so r sen si tiv it y. This en abl es ope r-

ation over the full temperature range with high

accuracy.

The ca lculati on of the ind ividual se nsor ch aracteris tics

and the programming of the EEPROM memory can

easily be done with a PC and the application kit from

Micronas.

The se nsor is desi gned for hos tile industri al and auto-

motive applications and operates with typically 5 V

supply voltage in the ambient temperature range from

−40 °C up to 150 °C. The HAL 815 is available in the

very small leaded packages TO92UT-1 and TO92UT-2.

1.1. Major Applications

Due to the sensor’s versatile programming character-

istics, the HAL815 is the optimal system solution for

applications such as:

– contactl es s pote ntiometers,

– angle sensors,

– distance measurements,

– magnetic field and current measurement.

1.2. Features

– high-precision linear Hall effect sensor with

ratiometric output and digital signal processing

– multiple programmable magnetic characteristics in a

non-volatile memory (EEPROM) with redundancy

and lock function

– open-circuit (ground and supply line break detec-

tion), overvoltage and undervoltage detection

– for programming an individual sensor within several

sensors in parallel to the same supply voltage, a

selection can be done via the output pin

– temperature characteristics are programmable for

matching all common magnetic materials

– programmable clamping function

– programming through a modulation of the supply

voltage

– operates from −40 °C up to 150 °C

ambient temperature

– operates from 4.5 V up to 5.5 V supply voltage in

specification and functions up to 8.5 V

– operates with static magnetic fields and dynamic

magnetic fields up to 2 kHz

– overvolta ge and re ve rse- volt age pr otec ti on at all

pins

– magnetic characteristics extremely robust against

mech anical stress

– short-circuit protected push-pull output

– EMC and ESD optimized design

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 5

1.3. Marking Code

The HAL815 has a marking on the package surface

(brand ed si de). This m arking in clude s the name o f the

sensor and the temperature range.

1.4. Operating Junction Temperature Range (TJ)

The Hall sensors from Micronas are specified to the

chip temperature (junction temperature TJ).

A: TJ = −40 °C to +170 °C

K: TJ = −40 °C to +140 °C

The relationship between ambient temperature (TA)

and junction temperature is explained in Section 4.4.

on page 24.

1.5. Hall Sensor Package Codes

Example: HAL815UT-K

→Type: 815

→Package: TO92UT

→Temperature Range: TJ = −40°C to +140°C

Hall sensor s are availabl e in a wide variety of packag-

ing versions and quantities. For more detailed informa-

tion, please refer to the brochure: “Hall Sensors:

Ordering Codes, Packaging, Handling”.

1.6. Soliderability and Welding

Soldering

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Welding

Device terminals should be compatible with laser and

resistance welding. Please note that the success of

the welding process is subject to different welding

parameters which will vary according to the welding

technique used. A very close control of the welding

parameters is absolutely necessary in order to reach

satisfying results. Micronas, therefore, does not give

any implied or express warranty as to the ability to

weld the component.

1.7. Pin Connections and Short Descriptions

Fig. 1–1: Pin configuration

Type Temperature Range

A K

HAL 815 815A 815K

HALXXXPA-T Temperature Range: A and K

Package: UT for TO92UT-1/-2

Type: 815

No. Pin Name Type Short Description

DD IN Supply Voltage and

Program ming Pi n

2 GND Ground

3 OUT OUT Push Pull Output

and Selecti on Pin

VDD

OUT

GND

HAL815 DATA SHEET

6Nov. 25, 2008; DSH000035_002EN Micronas

2. Functional Description

2.1. General Function

The HAL815 is a monolithic integrated circuit which

provides an output voltage proportional to the mag-

netic fl ux throug h th e Hal l p la te an d prop or tio nal to th e

supply voltage (ratiometric behavior).

The external magnetic field component perpendicular

to the branded side of the package generates a Hall

voltage . The H all IC i s sensi tive to magn etic n orth an d

south polarity. This voltage is converted to a digital

value, processed in the Digital Signal Processing Unit

(DSP) ac c or din g to the se tti ngs of the EE PRO M r egis-

ters, converted to an analog voltage with ratiometric

behavior, and stabilized by a push-pull output transis-

tor stage. The function and the parameters for the DSP

are explained in Section 2.2. on page 8.

The setting of the LOCK register disables the program-

ming of the EEPROM memory for all time. This regis-

ter cannot be reset.

As long as the LOCK register is not set, the output

characteristic can be adjusted by programming the

EEPROM registers. The IC is addressed by modulat-

ing the supply voltage (see Fig. 2–1). In the supply

voltage range from 4.5 V up to 5.5 V, the sensor gener-

ates an analog output voltage. After detecting a com-

mand, the sensor reads or writes the memory and

answers with a digital signal on the output pin. The

analog output is switched off during the communica-

tion.

Several sensors in parallel to the same supply and

ground line can be programmed individually. The

selection of each sensor is done via its output pin.

The open-circuit detection provides a defined output

voltag e if the VDD or GN D line is bro ken. Internal tem-

perature compensation circuitry and the choppered of f-

set com pensation ena bles operat ion over the full tem-

perature range with minimal changes in accuracy and

high offset stability. The circuitry also rejects offset

shifts due to m echan ic al s tres s from t he packag e. T he

non-volatile memory consists of redundant EEPROM

cells. In addition, the sensor IC is equipped with

devic es for ove r vol tag e an d re ve rse- vol tage protecti on

at al l pins.

Fig. 2–1: Programming with VDD modulation

Fig. 2–2: HAL815 block diagram

OUT

(V)

HAL

815

VDD GND OUT analog

VDD

digital

Internally Temperature Oscillator

Switched 100 Ω

Digital D/A Analog OUT

VDD

GND

Supply EEPROM Memory

Lock Control

Digital

stabilized

Supply and

Protection

Devices

Dependent

Bias

Protection

Devices

Hall Plate Signal

Processing Converter Output

Level

Detection Output

A/D

Converter

10 kΩ

Open-circuit,

Overvoltage,

Undervoltage

Detection

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 7

Fig. 2–3: Details of EEPROM and Digital Signal Processing

MODE Register

FILTER

6 bit

TCSQ

5 bit

SENSI-

14 bit

VOQ

11 bit

CLAMP-

10 bit 11 bit

LOCKR

1 bit

3 bit

RANGE

3 bit

EEPROM Memory

A/D

Converter Digital

Filter Multiplier Adder Limiter D/A

Converter

Digital Signal Processing

ADC-READOUT Register

14 bit Digital

Lock

Control

TIVITY LOW CLAMP-

HIGH

Output

Micronas

Registers

−40 −20 0 20 40

VOUT

Range = 30 mT

Filter = 500 Hz

Clamp-high = 4 V

VOQ = 2.5 V

Sensitivity = 0.116

Clamp-low = 1 V

Fig. 2–4: Example for output characteristics

−150 −100 −50 0 50 100 150

VOUT

Range = 100 mT

Filter = 2 kHz

Clamp-high = 4.5 V

VOQ = −0.5 V

Sensitivity = −1.36

Clamp-low = 0.5 V

Fig. 2–5: Example for output characteristics

HAL815 DATA SHEET

8Nov. 25, 2008; DSH000035_002EN Micronas

2.2. Digital Signal Processing and EEPROM

The DSP is the main part of this sensor and performs

the signal conditioning. The parameters for the DSP

are stored in the EEPROM registers. The details are

shown in Fig. 2–3.

Terminology:

SENSITIVITY: name of the register or register value

Sensitivity: name of the parameter

The EEPROM registers consist of three groups:

Group 1 contains the registers for the adaption of the

sensor to the magnetic system: MODE for selecting

the magnetic field range and filter frequency, TC and

TCSQ for the temperature characteristics of the mag-

netic sensitivity.

Group 2 contains the registers for defining the output

characteristics: SENSITIVITY, VOQ, CLAMP-LOW,

and CLAMP-HIGH. The output characteristic of the

sensor i s def ined b y these 4 par ameters (see F ig. 2–4

and Fig. 2–5 for examples).

– The paramete r VOQ (Output Quiescent Voltage)

corresponds to the output voltage at B = 0 mT.

– The parameter Sensitivity defines the magnetic sen-

sitivity:

– The output voltage can be calculated as:

The output voltage range can be clamped by setting

the reg ister s CL AM P-LO W a nd CLA MP -HI GH i n or der

to enable failure detection (such as short-circuits to

VDD or GND and open connections).

Group 3 contains the Micronas registers and LOCK for

the lo cking of all r egisters. T he Micronas r egisters ar e

programmed and locked during production and are

read-only for the customer. These registers are used

for oscillator frequency trimming, A/D converter offset

compensation, and several other special settings.

An external magneti c field gen erates a Hal l voltage on

the Hall plate. The ADC converts the amplified positive

or neg ative Ha ll v oltage ( operate s wi th mag netic n orth

and south poles at the branded side of the package) to

a digital value. Positive values correspond to a mag-

netic north pole on the branded side of the package.

The digital signal is filtered in the internal low-pass fil-

ter and is readable in the ADC-READOUT register.

Depending on the programmable magnetic range of

the Hall IC, the operating range of the A/D converter is

from −30 mT...+30 mT up to −150 mT...+150 mT.

During further processing, the digital signal is multi-

plied wi th the sensiti vity factor, added to th e quiescent

output voltage and limited according to the clamping

voltage. The result is converted to an analog signal

and stabilized by a push-pull output transistor stage.

The ADC-READOUT at any given magnetic field

depends on the programme d magnetic fi eld range but

also o n the filter fr equency. Fig. 2–6 shows th e typical

ADC-READO UT value s for the different magnetic field

ranges with the filter frequenc y set to 2 kHz. The rela-

tionship between the minimum and maximum ADC-

READOUT values and the filter frequency setting is

listed in the following table.

ΔVOUT

ΔB

Sensitivity =

VOUT ∼ Sensitivity × B + VOQ

Filter Frequency ADC-READOUT range

80 Hz −3968...3967

160 Hz −1985...1985

500 Hz −5292...5290

1 kHz −2646...2645

2 kHz −1512...1511

−200 −100 0 100 200

−2000

−1500

−1000

−500

500

1000

1500

2000

ADC-

READOUT

Range 150 mT

Range 90 mT

Range 60 mT

Range 30 mT

Filter = 2 kHz

Fig. 2–6: Typical ADC-READOUT

versus magnetic field for filter = 2 kHz

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 9

Note: During application design, it should be taken

into consideration that the maximum and mini-

mum ADC-READOUT is not exceeded during

calibration and oper ation of the Hall IC. Conse-

quently, the maximum and minimum magnetic

fields that may occur in the operational range

of a specific appli cati on sho uld not satur ate the

A/D converter. Please note that the A/D con-

verter saturates at magnetic fields well above,

respectively below, the magnetic range limits.

This large safety band between specifi ed mag-

netic range and true operational r ange helps to

avoid any s aturation.

Range

The RANGE bits are the three lowest bits of the MODE

D converter.

Filter

The FILTER bits are the three highest bits of the

MODE regis te r; the y defin e t he −3 dB frequency of the

digital low pass filter.

TC and TCSQ

The temperature dependence of the magnetic sensitiv-

ity can be adapted to different magnetic materials in

order to compensate for the change of the magnetic

strength with temperature. The adaption is done by

programming the TC (Temperature Coefficient) and

the TCSQ registers (Quadratic Temperature Coeffi-

cient). Thereby, the slope and the curvature of the

temperature dependence of the magnetic sensitivity

can be m atc hed to th e mag net an d the se nsor a ssem-

bly. As a result, the output voltage characteristic can

be fixed over the full temperature range. The sensor

can compensate for linear temperature coefficients

ranging from about −3100 ppm/K up to 400 ppm/K and

quadratic coefficients from about −5 ppm /K² to 5 ppm/

K². Pleas e r efe r to Section 4.3 . on p age 2 3 for th e rec-

ommended settings for different linear temperature

coefficients.

Sensitivity

The SENSITIVITY register contains the parameter for

the multiplier in the DSP. The Sensitivity is program-

mable between −4 and 4. For VDD = 5 V, the register

can be changed in steps of 0.00049. Sensitivity = 1

corresponds to an increase of the output voltage by

VDD if the ADC-READOUT increases by 2048.

For all ca lc ul ati ons, the di gi tal value fr om the magn eti c

field of the A/D conv erter is used. This digital informa-

tion is readable from the ADC-READOUT register.

VOQ

The VOQ register contains the parameter for the adder

in the DSP. VOQ is the output voltag e without ex ternal

magnetic field (B = 0 mT, respectively ADC-READ-

OUT = 0) and programmable from −VDD up to VDD. For

VDD = 5 V, the register can be changed in steps of

4.9 mV.

Note: If VOQ i s progr ammed to a neg ative vo ltage, t he

maximum output voltage is limited to:

For calibration in the system environment, a 2-point

adjustment procedure (see Section 2.3.) is recom-

mended. The suitable Sensitivity and VOQ values for

each s ensor c an be calcul ated i ndiv idually by th is pro-

cedure.

Magnetic Field Range RANGE

−30 mT...30 mT 0

−40 mT...40 mT 4

−60 mT...60 mT 5

−75 mT...75 mT 1

−80 mT...80 mT 6

−90 mT...90 mT 2

−100 mT...100 mT 7

−150 mT...150 mT 3

−3 dB Frequency FILTER

80 Hz 0

160 Hz 1

500 Hz 2

1 kHz 3

2 kHz 4

ΔVOUT * 2048

ΔADC-READOUT * VDD

Sensitivity =

VOUTmax = VOQ + VDD

HAL815 DATA SHEET

10 Nov. 25, 2008; DSH000035_002EN Micronas

Clamping Voltage

The output voltage range can be clamped in order to

detect failures like shorts to VDD or GND or an open

circuit.

The CLAMP-LOW register contains the parameter for

the lower limit. The lower clamping voltage is program-

mable between 0 V and VDD/2. For VDD = 5 V, the reg-

ister can be changed in steps of 2.44 mV.

The CLAM P-HIGH regis ter contains the parame ter for

the upper limit. The upper clamping voltage is pro-

grammable between 0 V and VDD. For VDD = 5 V, in

steps of 2.44 mV.

LOCKR

By setting this 1-bit register, all registers will be locked,

and the sensor will no longer respond to any supply

voltage modulation. This bit is active after the first

power-off and power-on sequence after setting the

LOCK bit.

Warning: This register cannot be reset!

ADC-READOUT

This 14-bit register delivers the actual digital value of

the applied magnetic field before the signal process-

ing. This register can be read out and is the basis for

the calibration procedure of the sensor in the system

environment.

2.3. Calibration Procedure

2.3.1. General Procedure

For ca libratio n in the sys tem envi ronme nt, the appli ca-

tion k it f rom Micron as is r ecom men ded . It con tai ns the

hardware for the generation of the serial telegram for

programming and the corresponding software for the

input of the registe r values .

In this section, programming of the sensor using this

programming tool is explained. Please refer to

Section 5. on page 25 for information about program-

ming without this tool.

For the individual calibration of each sensor in the cus-

tomer application, a two point adjustment is recom-

mended (see Fig. 2–7 for an example). When using

the ap plicati on kit, the ca librati on can be done in thr ee

steps:

Step 1: Input of the registers which need not be

adjusted individually

The magnetic circuit, the magnetic material with its

temperature characteristics, the filter frequency, and

low and h igh clampi ng voltage are given for this app li-

cation.

Therefore, the values of the following registers should

be identical for all sensors of the customer application.

–FILTER

(according to the maximum signal frequency)

–RANGE

(according to the maximum magnetic field at the

sensor position)

– TC and TCSQ

(depends on the material of the magnet and the

other temperature dependencies of the application)

– CLAMP-LOW and CLAMP-HIGH

(according to the application requirements)

Write the appropriate settings into the HAL 815 regis-

ters.

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 11

Step 2: Calculation of VOQ and Sensitivity

The calibration points 1 and 2 can be set inside the

specified range. The corresponding values for VOUT1

and VOUT2 result from the application requirements.

For highest accuracy of the sensor, calibration points

near the minimum an d maximum input signal are rec-

ommended. The difference of the output voltage

between calibration point 1 and calibration point 2

should be more than 3.5 V.

Set the syst em to calibra tion point 1 an d read the reg-

ister ADC-READOUT. The result is the value ADC-

READOUT1.

Now, set the system to calibration point 2, read the

ADC-READOUT2.

With these values and the target values VOUT1 and

VOUT2, for the calibration points 1 and 2, respectively,

the values for Sensitivity and VOQ are calculated as:

This calculation has to be done individually for each

sensor.

Next, write the calculated values for Sensitivity and

VOQ into the IC for adjusting the sensor.

The se ns or is now calibr at ed f or the cu stomer appl ic a-

tion. However, the programming can be changed

again and again if necessary.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

“LOCK” command. Please note that the LOCK function

becomes effective after power-down and power-up of

the Hall IC. The sensor is now locked and does not

respond to any programming or reading commands.

Warning: This register cannot be reset!

2.3.2. Calibration of the Angle Sensor

The following description explains the calibration pro-

cedure using an angle sensor as an example. The

required output characteristic is shown in Fig. 2–7.

– the angle range is from −25° to 25°

– temperature coefficient of the magnet: −500 ppm/K

Low clamping voltage ≤ VOUT1,2 ≤ High clamping voltage

VOUT1 − VOUT2

ADC-READOUT1 − ADC-READOUT2

Sensitivity = VDD

2048

ADC-READOUT1 * Sensitivity * VDD

2048

VOQ = VOUT1 −

−30 −20 −100 102030

VOUT

Angle

Clamp-high = 4.5 V

Calibration point 2

Calibration point 1

Clamp-low = 0.5 V

Fig. 2–7: Example for output characteristics

HAL815 DATA SHEET

12 Nov. 25, 2008; DSH000035_002EN Micronas

Step 1: Input of the registers which need not be

adjusted individually

The register values for the following registers are given

for all applications:

–FILTER

Select the filter frequency: 500 Hz

–RANGE

Select the magnetic field range: 30 mT

–TC

For this magnetic material: 6

–TCSQ

For this magnetic material: 14

–CLAMP-LOW

For our example: 0.5 V

–CLAMP-HIGH

For our example: 4.5 V

Enter these values in the software, and use the “write

and store” command for permanently writing the val-

ues in the registers.

Step 2: Calculation of VOQ and Sensitivity

There are two ways to calculate the values for VOQ

and Sensitivity.

Manual Calculation:

Set the system to calibration point 1 (angle 1 = −25°)

and read the register ADC-READOUT. For our exam-

ple, the result is ADC-READOUT1 = −2500.

Next, set the system to calibration point 2 (angle 2 =

25°), an d read the regi ster A DC-READO UT again . For

our example, the result is ADC-READOUT2 = +2350.

With these measurements and the targets VOUT1 =

4.5 V an d VOUT2 = 0.5 V, the val ues f or Se ns iti v ity an d

VOQ are calculated as

Software Calibration:

Use the menu CALIBRATE from the PC software and

enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2.

Set the system to ca libration point 1 (angle 1 = −25°),

hit the button “Read ADC-Readout1”, set the system to

calib ratio n poi nt 2 (a ngle 2 = 25° ) , hit the butto n “Re ad

ADC-Readout2”, and hit the button “Calculate”. The

software will then calculate the appropriate VOQ and

Sensitivity.

This calculation has to be done individually for each

sens or. Now, wri te t he ca lc ul at e d v al ues with th e “wr it e

and store” command into the HAL815 for program-

ming the sensor.

Step 3: Locking the Sensor

The last step is activating the LOCK function with the

“LOCK” command. Please note that the LOCK function

becomes effective after power-down and power-up of

the Hall IC. The sensor is now locked and does not

respond to any programming or reading commands.

Warning: This register cannot be reset!

4.5 V − 0.5 V

−2500 − 2350

Sensitivity = 5V

2048

*=−0.3378

VOQ = 4.5 V −2048

−2500 * (−0. 3378) * 5 V= 2.438 V

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 13

3. Specifications

3.1. Out line Dimensi ons

Fig. 3–1:

TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread

Weight approximately 0.12 g

HAL815 DATA SHEET

14 Nov. 25, 2008; DSH000035_002EN Micronas

Fig. 3–2:

TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread

Weight approximately 0.12 g

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 15

Fig. 3–3:

TO92UT-2: Dimensions ammopack inline, not spread

HAL815 DATA SHEET

16 Nov. 25, 2008; DSH000035_002EN Micronas

Fig. 3–4:

TO92UT-1: Dimensions ammopack inline, spread

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 17

3.2. Dimensions of Sensitive Area

0.25 mm x 0.25 mm

3.3. Position of Sensitive Areas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute

maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; howeve r, i t is ad vise d that no rmal pr ecaut ions b e taken to avo id appl ication of a ny vo ltage h igher tha n ab so-

lute maximum-rated voltages to this circuit.

All voltages listed are referenced to ground (GND).

TO92UT-1/-2

x center of the package

y 1.5 mm nominal

Bd 0.3 mm

Symbol Parameter Pin No . Min. Max. Unit

VDD Supply Voltage 1 −8.5 8.5 V

VDD Supply Voltage 1 −14.41) 2) 14.41) 2) V

−IDD Reverse Supply Current 1 −501) mA

VOUT Output Voltage 3 −55)

−55) 8.53)

14.43) 2) V

VOUT − VDD Excess of Output Voltage

over Supply Voltage 3,1 2 V

IOUT Continuous Output Current 3 −10 10 mA

tSh Output Short Circuit Duration 3 −10 min

TJJunction Temperature Range −40

−40 1704)

150 °C

°C

NPROG Number of Programming Cycles −100

1) as long as TJmax is not exceeded

2) t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min)

3) as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)

4) t < 1000h

5) internal protection resistor = 100 Ω

HAL815 DATA SHEET

18 Nov. 25, 2008; DSH000035_002EN Micronas

3.4.1. Storag e and Shelf Life

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of

30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package.

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-

tics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

Symbol Parameter Pin No . Min. Typ. Max. Unit

VDD Supply Voltage 1 4.5 5 5.5 V

IOUT Continuous Output Current 3 −1−1mA

RLLoad Resistor 3 4.5 −−kΩ

CLLoad Capacitance 3 0.33 10 1000 nF

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 19

3.6. Characteristics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

IDD Supply Current

over Temperature Range 1−710mA

VDDZ Overvoltage Protection

at Supply 1−17.5 20 V IDD = 25 mA, TJ = 25 °C, t = 20 ms

VOZ Overvoltage Protection

at Output 3−17 19.5 V IO = 10 mA, TJ = 25 °C, t = 20 ms

Resolution 3 −12 −bit ratiometric to VDD 1)

INL Non-Linearity of Output Voltage

over Temperature 3−0.5 0 0.5 % % of supply voltage2)

ERRatiometric Error of Output

over Temperature

(Error in VOUT / VDD)

3−0.5 0 0.5 % ⎥ VOUT1 - VOUT2⎥ > 2V

during calibration procedure

Ratiometricy of Output

over Temperature 3 99.5 100 100.5 % ⎥ VOUT1 - VOUT2⎥ > 2V

during calibration procedure

ΔTKVariation of Linear Temperature

Coefficient 3−400 0 400 ppm/k if TC and TCSQ suitable for the

application

ΔVOUTCL Accuracy of Output V olt age at

Clamping Low Voltage over

Temperature Range

3−45 0 45 mV RL = 4.7 kΩ, VDD = 5 V

ΔVOUTCH Accuracy of Output V olt age at

Clamping High V oltage over

Temperature Range

3−45 0 45 mV RL = 4.7 kΩ, VDD = 5 V

VOUTH Output High Voltage 3 4.65 4.8 V VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA

VOUTL Output Low Voltage 3 0.2 0.35 V VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA

fADC Internal ADC Frequency over

Temperature Range −110 128 150 kHz VDD = 4.5 V to 8.5 V

tr(O) Response Time of Output 3 −5

3 dB Filter frequency = 80 Hz

3 dB Filter frequency = 160 Hz

3 dB Filter frequency = 500 Hz

3 dB Filter frequency = 2 kHz

CL = 10 nF, time from 10% to 90% of

final output voltage for a steplike

signal Bstep from 0 mT to Bmax

td(O) Delay Time of Output 3 −0.1 0.5 ms CL = 10 nF

tPOD Power-Up Time (Time to reach

stabilized Output Voltage) −−6

3 dB Filter frequency = 80 Hz

3 dB Filter frequency = 160 Hz

3 dB Filter frequency = 500 Hz

3 dB Filter frequency = 2 kHz

CL = 10 nF, 90% of VOUT

BW Small Signal Bandwidth (−3dB) 3 −2−kHz BAC < 10 mT;

3 dB Filter frequency = 2 kHz

VOUTn Noise Output Voltagepp 3−3 6 mV magnetic range = 90 mT3)

3 dB Filter frequency = 80 Hz

Sensitivity ≤ 0.26

1) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096

2) if more than 50% of the selected magnetic field range are used and the temperature compensation is suitable

3) peak-to-peak value exceeded: 5%

VOUT VDD

()

VDD

----------------------------- VOUT VDD 5 V=()

5 V

---------------------------------------------

⁄=

HAL815 DATA SHEET

20 Nov. 25, 2008; DSH000035_002EN Micronas

3.7. M agn etic Ch ara cteri st ics

at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

3.8. Open-Circuit Detection

at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor

3.9. Overvoltage and Undervoltage Detection

at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C

Please note: The over- and undervoltage detection is activated only after locking the sensor!

ROUT Output Resistance over

Recommended Operating Range 3−110ΩVOUTLmax ≤ VOUT ≤ VOUTHmin

RthJA

TO92UT-1,

TO92UT-2

Thermal Resistance Junction to

Soldering Point −−150 200 K/W

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

BOffset Magnetic Of fset 3 −0.5 0 0.5 mT B = 0 mT, IOUT = 0 mA, TJ = 25 °C,

unadjusted sensor

ΔBOffset/ΔT Magnetic Of fset Change

due to TJ

−10 0 10 μT/K B = 0 mT, I OUT = 0 mA

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

VOUT Output voltage

at open VDD line 3 000.2V V

DD = 5 V

RL = 10 kΩ to GND

VOUT Output voltage at

open GND line 34.74.85VV

DD = 5 V

RL = 10 kΩ to GND

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

VDD,UV Undervoltage detection level 1 3.2 3.7 4.1 V 1)

VDD,OV Overvoltage detection level 1 8.5 8.9 10.0 V 1)

1) If the supply voltage drops below VDD,UV or rises above VDD,OV, the output voltage is switched to VDD (≥94% of VDD at RL = 10 kΩ to GND).

The CLAMP-LOW register has to be set to a voltage ≥ 200 mV

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 21

3.10. Typical Characteristics

−15 −10 −5 0 5 101520

−20

−15

−10

-5

IDD

VDD

TA = −40 °C

TA = 25 °C

TA = 150 °C

Fig. 3–5: Typical current consumption

versus supply volt age

−50 0 50 100 150 200

°C

VDD = 5 V

IDD

Fig. 3–6: Typical current consumption

versus ambient temperature

−1.5 −1.0 −0.5 0.0 0.5 1.0 1.5

TA = 25 °C

VDD = 5 V

IDD

IOUT

Fig. 3–7: Typical current consumption

versus output current

–40

–35

−30

–25

–20

–15

–10

–5

10 100 1000 10000Hz

fsignal

VOUT –3

Filter: 80 Hz

Filter: 160 Hz

Filter: 500 Hz

Filter: 2 kHz

Fig. 3–8: Typical output voltage

versus signal frequency

HAL815 DATA SHEET

22 Nov. 25, 2008; DSH000035_002EN Micronas

45678

−1.0

−0.8

−0.6

−0.4

−0.2

0.0

0.2

0.4

0.6

0.8

1.0

VOUT/VDD = 0.82

VOUT/VDD = 0.66

VOUT/VDD = 0.5

VOUT/VDD = 0.34

VOUT/VDD = 0.18

VDD

Fig. 3–9: Typical ratiometric error

versus supply volt age

−50 0 50 100 150 200

100

120

TC = 16, TCSQ = 8

TC = 0, TCSQ = 12

TC = −20, TCSQ = 12

TC = −31, TCSQ = 0

°C

1/sensitivity

Fig. 3–10: Typical 1/sensitivity

versus ambient temperature

−50 0 50 100 150 200

−1.0

−0.8

−0.6

−0.4

−0.2

0.0

0.2

0.4

0.6

0.8

°C

1.0

TC = −20, TCSQ = 12

TC = 0, TCSQ = 12

TC = 16, TCSQ = 18

BOffset

Fig. 3–11: Typical magnetic offset

versus ambient temperature

−40 −20 0 20 40

−1.0

−0.8

−0.6

−0.4

−0.2

0.0

0.2

0.4

0.6

0.8

1.0

Range = 30 mT

INL

Fig. 3–12: Typical nonlinearity

versus magnetic field

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 23

4. Application Notes

4.1. Application Circuit

For EMC protection, it is recommended to connect one

ceramic 4.7 nF capacitor each between ground and

the supp ly v ol tage , res pec ti ve ly th e ou tpu t v olt age pi n.

In addition, the input of the controller unit should be

pulled-down with a 4.7 kOhm resistor and a ceramic

4.7 nF capacitor.

Please note that during programming, the sensor will

be supplied repeatedly with the programming voltage

of 12.5 V for 100 ms. All components connected to the

VDD line at this time must be able to resist this voltage.

Fig. 4–1: Recommended application circuit

4.2. Use of two HAL815 in Parallel

Two different HAL815 sensors which are operated in

parallel to the same supply and ground line can be

programmed individually. In order to select the IC

which sh oul d be pr ogrammed, both Hall ICs ar e in acti-

vated by the “Deactivate” command on the common

supply line. Then, the appropriate IC is activated by an

“Activate” pulse on its output. Only the activated sen-

sor will react to all following read, write, and program

commands. If the second IC has to be programmed,

the “De activate” command is sent agai n, and the sec-

ond IC can be selected.

Fig. 4–2: Parallel operation of two HAL815

4.3. Temperature Compensation

The relationship between the temperature coefficient

of the magnet and the corresponding TC and TCSQ

codes for l inear c ompen satio n is given in th e foll owing

table. In addition to the linear change of the magnetic

field with temperature, the curvature can be adjusted

as well. For this purpose, other TC and TCSQ combi-

nations are requi red which are not show n in the table.

Pleas e contact Mic ronas for more detail ed informati on

on this higher order temperature compensation.

The HAL805, HAL810 , and HAL815 con t ain the sa me

temperature compensation circuits. If an optimal set-

ting for the HAL 805/HAL 810 is already available, the

same settings may be used for the HAL815.

OUT

VDD

GND

4.7 nF HAL815

4.7 kΩ

μC

4.7 nF 4.7 nF

HAL 815

GND

10 nF HAL 815

4.7 nF 4.7 nF

Sensor A Sensor B

VDD

OUT B & Select B

OUT A & Select A

Temperature

Coeffici ent of

Magnet (ppm/K)

TC TCSQ

400 31 6

300 28 7

200 24 8

100 21 9

01810

−50 17 10

−90 16 11

−130 15 11

−170 14 11

−200 13 12

−240 12 12

−280 11 12

−320 10 13

−360 9 13

−410 8 13

−450 7 13

−500 6 14

−550 5 14

−600 4 14

−650 3 14

−700 2 15

−750 1 15

HAL815 DATA SHEET

24 Nov. 25, 2008; DSH000035_002EN Micronas

4.4. Ambient Temperature

Due to the i nternal power di ssipation, the te mperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

TJ = TA + ΔT

At static conditions and continuous operation, the fol-

lowing equation applies:

ΔT = IDD * VDD * RthJA

For typical values, use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the appli-

cation.

For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the

temperature difference ΔT = 11 K.

For all sensors, the junction temperature TJ is speci-

fied. The maximum ambient temperature TAmax can be

calculated as:

TAmax = TJmax −ΔT

4.5. EMC and ESD

The HAL815 is designed for a stabilized 5 V supply.

Interferences and disturbances conducted along the

12 V onbo ar d sys tem ( prod uct standard IS O 763 7 par t

1) are not relevant for these applications.

For applications with disturbances by capacitive or

inductive coupling on the supply line or radiated distur-

bances, the application circuit shown in Fig. 4–1 is rec-

ommended. Applications with this arrangement

passed the EMC tests according to the product stan-

dards ISO 7637 part 3 (Electrical transient transmis-

sion by capacitive or inductive coupling).

Please contact Micronas for the detailed investigation

reports with the EMC and ESD results.

−810 0 15

−860 −116

−910 −216

−960 −316

−1020 −417

−1070 −517

−1120 −617

−1180 −718

−1250 −818

−1320 −919

−1380 −10 19

−1430 −11 20

−1500 −12 20

−1570 −13 20

−1640 −14 21

−1710 −15 21

−1780 −16 22

−1870 −17 22

−1950 −18 23

−2030 −19 23

−2100 −20 24

−2180 −21 24

−2270 −22 25

−2420−24 26

−2500 −25 27

−2600 −26 27

−2700 −27 28

−2800 −28 28

−2900 −29 29

−3000 −30 30

−3100 −31 31

Temperature

Coefficient of

Magnet (ppm/K)

TC TCSQ

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 25

5. Programming of the Se nsor

5.1. Definition of Programming Pulses

The sensor is addressed by modulating a serial tele-

gram on the supply voltage. The sensor answers with

a serial telegr am on the output pin.

The bit s in the seri al telegram have a different bi t time

for the VDD-line and the output. The bit time for the

VDD-line is defined through the length of the Sync Bit

at the beg innin g of each telegram. The bit time for the

output is defined through the Acknowledge Bit.

A logical “0” is coded as no voltage change within the

bit time. A logical “1” is coded as a voltage change

between 50% and 80% of the bit time. After each bit, a

voltage change occurs.

5.2. Definition of the Telegram

Each telegram starts with the Sync Bit (logical 0), 3

bits for the Com mand ( COM), the Co mmand P arity Bi t

(CP), 4 bits for the Address (ADR), and the Address

Parity Bit (AP).

There are 4 kinds of telegrams:

– Write a register (see Fig. 5–2)

After the AP Bit, follow 14 Data Bits (DAT) and the

Data Pari ty Bit (DP). If the telegr am is vali d and the

comma nd h as bee n p ro cess ed , the sensor an swe rs

with an Acknowledge Bit (logical 0) on the output.

– Read a register (see Fig. 5–3)

After ev aluating this command, the sensor answ ers

with the Acknowledge Bit, 14 Data Bits, and the

Data Parity Bit on the output.

– Programming the EEPROM cells (see Fig. 5–4)

After ev aluating this command, the sensor answ ers

with the Acknowledge Bit. After the delay time tw,

the supply voltage rises up to the programming volt-

age.

– Activate a sensor (see Fig. 5–5)

If more than one sensor is connected to the supply

line, selection can be done by first deactivating all

sensors. The output of all sensors will be pulled to

ground by the int ernal 10 k Ω r esi s tor s. Wi th an Acti-

vate puls e on the appropri ate output pin, an individ-

ual sensor c an b e s ele cte d. A ll fol lo wing command s

will only be accepted from the activated sensor.

Fig. 5–1: Definition of logical 0 and 1 bit

trtf

tp0 tp0

logical 0

VDDH

VDDL

tp0

logical 1

VDDH

VDDL

or tp0

tp1

Table 5–1: Telegram param eter s

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

VDDL Supply Voltage for Low Level

during Programming 155.66V

VDDH Supply Voltage for High Level

during Programming 1 6.8 8.0 8.5 V

trRise ti me 1 0.05 ms

tfFall ti me 1 0.05 ms

tp0 Bit time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit

tpOUT Bit time on output pin 3 2 3 4 ms tpOUT is defined through the

Acknowledge Bit

tp1 Voltage Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT

VDDPROG Supply Voltage for

Programming the EEPROM 1 12.4 12.5 12.6 V

tPROG Programming Time for EEPROM 1 95 100 105 ms

trp Rise time of programming voltage 1 0.2 0.5 1 ms

HAL815 DATA SHEET

26 Nov. 25, 2008; DSH000035_002EN Micronas

Fig. 5–2: Telegram for coding a Write command

Fig. 5–3: Telegram for coding a Read command

Fig. 5–4: Telegram for coding the EEPROM programming

Fig. 5–5: Activate pulse

tfp Fall time of programming voltage 1 0 1 ms

twDelay time of programming voltage

after Acknowledge 10.50.71ms

Vact Voltage for an Activate pulse 3 3 4 5 V

tact Duration of an Activate pulse 3 0.05 0.1 0.2 ms

Table 5–1: Telegram param eters , conti nu ed

Symbol Parameter Pin Min. Typ. Max. Unit Remarks

Sync COM CP ADR AP DAT DP

Acknowledge

VDD

VOUT

WRITE

Sync COM CP ADR AP

DAT DPAcknowledge

VDD

VOUT

READ

Sync COM CP ADR AP

tPROG

Acknowledge

VDD

VOUT

ERASE, PROM, and LOCK

trp tfp

VDDPROG

tACT

VOUT

trtf

VACT

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 27

5.3. Telegram Codes

Sync Bit

Each teleg ram s tarts wi th the S ync Bit. This logica l “0”

pulse defines the exact timing for tp0.

Command Bits (COM)

The Command code contains 3 bits and is a binary

number. Table 5–2 shows the available commands

and the corresponding codes for the HAL815.

Command Parity Bit (CP)

This par ity bit is “1” if th e number of zeros within the 3

Command Bits is uneven. The parity bit is “0”, if the

number of zeros is even.

Address Bits (ADR)

The Address code contains 4 bits and is a binary num-

ber. Table 5–3 shows the available addresses for the

HAL815 registers.

Address Parity Bit (AP)

This par ity bit is “1” if th e number of zeros within the 4

Address bits is une ven. T he parity bit is “0” if the num-

ber of zeros is even.

Data Bits (DAT)

The 14 Data Bits contain the register information.

The registers use different number formats for the

Data Bits. These formats are explained in Section 5.4.

In the Write command, the last bits are valid. If, for

example, the TC register (6 bits) is written, only the

last 6 bits are valid.

In the Read command, the first bits are valid. If, for

example, the TC register (6 bits) is read, only the first 6

bits are valid.

Data Parity Bit (DP)

This parity bit is “1” if the number of zeros within the

binary number is even. The parity bi t is “0” i f the num-

ber of zeros is uneven.

Acknowledge

After each telegram, the output answers with the

Ackno wledge sig nal. This logical “ 0” pulse d efines the

exact timing for tpOUT.

Table 5–2: Available commands

Command Code Explanation

READ 2 read a register

WRITE 3 write a register

PROM 4 program all nonvolatile registers (except the lock bits)

ERASE 5 erase all nonvolatile registers (except the lock bits)

LOCK 7 lock the whole device and switch permanently to the analog-mode

HAL815 DATA SHEET

28 Nov. 25, 2008; DSH000035_002EN Micronas

5.4. Number Formats

Binary number:

The most significant bit is given as first, the least sig-

nificant bit as last digit.

Example: 101001 represents 41 decimal.

Signed binary number:

The first digit represents the sign of the following

binary number (1 for negative, 0 for positive sign).

Example: 0101001 represents +41 decimal

1101001 represents −41 decim al

Two-complementa ry number:

The fi rst digi t of pos itive n umber s is “0”, the rest of t he

number is a binary number. Negative numbers start

with “1”. In or der to calc ulate the abs olute value o f the

number, calculate the complement of the remaining

digits and add “1”.

Example: 0101001 represents +41 decimal

1010111 represents −41 decimal

Micronas registers (read only for customers)

Table 5–3: Available register addresses

Bits Format Customer Remark

CLAMP-LOW 1 10 binary read/write/program Low clamping voltage

CLAMP-HIGH 2 11 binary read/write/program High clamping voltage

VOQ 3 11 two compl.

binary read/write/program

SENSITIVITY 4 14 signed binary read/write/program

MODE 5 6 binary read/write/program Range and filter settings

LOCKR 6 1 binary lock Loc k Bit

ADC-READOUT 7 14 two compl.

binary read

TC 11 6 signed binary read/write/program

TCSQ 12 5 binary read/write/program

DEACTIVATE 15 12 b ina ry write Deact ivate the sensor

Bits Format Remark

OFFSET 8 5 two compl. binary ADC offset adjustment

FOSCAD 9 5 binary Oscillator frequency adjustment

SPECIAL 13 8 special settings

DATA SHEET HAL815

Micronas Nov. 25, 2008; DSH000035_002EN 29

5.5. Register Information

CLAMP-LOW

– The register range is from 0 up to 1023.

– The register value is calculated by:

CLAMP-HIGH

– The register range is from 0 up to 2047.

– The register value is calculated by:

VOQ

– The register range is from −1024 up to 1023.

– The register value is calculated by:

SENSITIVITY

– The register range is from −8192 up to 8191.

– The register value is calculated by:

TC and TCSQ

– The TC register range is from −31 up to 31.

– The TCSQ register range is from 0 up to 31.

Please refer Section 4.2. on page 23 for the recom-

mended values.

MODE

– The register range is from 0 up to 63 and contains

the settings for FILTER and RANGE:

Please refer Section 2.2. on page 8 for the available

FILTER and RANGE values.

ADC-READOUT

– Th is register is read only.

– The register range is from −8192 up to 8191.

DEACTIVATE

– This register can only be written.

– The register has to be written with 2063 decimal

(80F hexadecimal) for the deactivation.

– The sensor can be reset with an Activate pulse on

the output pin or by switching off and on the supply

voltage.

5.6. Programmi ng Infor mation

If the content of any register (except the lock registers)

is to be changed, the desired value must first be writ-

ten into the corresponding RAM register. Before read-

ing out the RAM register again, the register value must

be permanently stored in the EEPROM.

Permanently storing a value in the EEPROM is done

by first sending an ERASE command followed by

sending a PROM command. The address within the

ERASE and PROM commands is not important.

ERASE and PROM act on all registers in parallel.

If all HAL815 registers are to be changed, all writing

commands can be sent one after the other , followed by

sending one ERASE and PROM command at the end.

During all communication sequences, the customer

has to check if the communication with the sensor was

successful. This means that the acknow ledge and the

parity bits sent by the sensor have to be checked by

the customer. If the Micronas programmer board is

used, the customer has to check the error flags sent

from the programmer board.

Note: For producti on and qualifi cation tests, it i s man-

datory to set the LOCK bit afte r fin al adjus tment

and programming of HAL 815. The LOCK func-

tion is ac tive after t he next power-u p of the s en-

sor. Micronas also recommends sending an

additional ERASE command after sending the

LOCK command.

The success of the Lock Process should be

checked by rea ding at le ast one s ensor register

after locking and/or by an analog check of the

se nsors output signal.

Electrostatic Discharges (ESD) may disturb the

programming pulses. Please take precautions

against ESD.

Low Clampi ng Voltage

VDD * 2048CLAMP-LOW =

High Clamping Voltage

VDD * 2048CLAMP-HIGH =

VOQ

VDD * 1024VOQ =

Sensitivity * 2048SENSITIVITY =

MODE = FILTER * 8 + RANGE

HAL815 DATA SHEET

30 Nov. 25, 2008; DSH000035_002EN Micronas

Micronas GmbH

Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany

Tel. +49-761 -517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com

6. Data Sheet History

1. Data Sheet: “HAL815 Programmable Linear Hall-

Effect Sensor”, Aug. 16, 2002, 6251-537- 1DS. Firs t

release of the data sheet.

2. Data Sheet: “HAL815 Programmable Linear

Hall-Effect Sensor”, June 24, 2004, 6251-537-2DS.

Second release of the data sheet. Major changes:

– new package diagram for TO92UT-1

– package diagr am for TO92UT- 2 adde d

– ammopack diagrams for TO92UT-1/-2 added

3. Data Sheet: “HAL815 Programmable Linear Hall-

Effect Sensor”, Feb. 7, 2006, 6251-537-3DS.

Third release of the data sheet. Major changes:

– characteristics updated

4. Data Sheet: “HAL815 Programmable Linear

Hall-Effect Sensor”, Nov. 25, 2008,

DSH000035_002EN. Fourth release of the data

sheet. Maj or chan ges:

– Section 1.6. “Solderability and Welding” updated

– package diagr ams updat ed