PMEG6010ETR,115 - NXP Semiconductors

PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

10 October 2012 Product data sheet

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1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD123W small and flat

lead Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

•Average forward current: IF(AV) ≤ 1 A

•Reverse voltage: VR ≤ 60 V

•Low forward voltage

•High power capability due to clip-bonding technology

•Small and flat lead SMD plastic package

•AEC-Q101 qualified

•High temperature Tj ≤ 175 °C

1.3 Applications

•Low voltage rectification

•High efficiency DC-to-DC conversion

•Switch mode power supply

•Reverse polarity protection

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IFforward current Tsp = 165 °C - - 1.4 A

δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C;

square wave

[1] - - 1 AIF(AV) average forward

current

δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;

square wave

- - 1 A

VRreverse voltage Tj = 25 °C - - 60 V

VFforward voltage IF = 1 A; Tj = 25 °C - 460 530 mV

IRreverse current Tj = 25 °C; VR = 60 V; tp ≤ 300 µs;

δ ≤ 0.02 ; pulsed

- 30 60 µA

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

trr reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;

Tj = 25 °C

- 4.4 - ns

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode[1]

2 A anode

SOD123W

sym001

1 2

[1] The marking bar indicates the cathode.

3. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMEG6010ETR SOD123W plastic surface mounted package; 2 leads SOD123W

4. Marking

Table 4. Marking codes

Type number Marking code

PMEG6010ETR EK

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage Tj = 25 °C - 60 V

IFforward current Tsp = 165 °C - 1.4 A

δ = 0.5 ; f = 20 kHz; Tamb ≤ 140 °C;

square wave

[1] - 1 AIF(AV) average forward current

δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;

square wave

- 1 A

IFSM non-repetitive peak forward

current

tp = 8 ms; Tj(init) = 25 °C; square wave - 50 A

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 3 / 13

Symbol Parameter Conditions Min Max Unit

[2] - 680 mW

[3] - 1150 mW

Ptot total power dissipation Tamb ≤ 25 °C

[1] - 2140 mW

Tjjunction temperature - 175 °C

Tamb ambient temperature -55 175 °C

Tstg storage temperature -65 175 °C

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1][2] - - 220 K/W

[1][3] - - 130 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air

[1][4] - - 70 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

[5] - - 18 K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Soldering point of cathode tab.

006aab362

102

103

Zth(j-a)

(K/W)

10- 1

tp(s)

10- 3 102103

10110- 2 10- 1

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02 0.01

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 4 / 13

006aab363

102

103

Zth(j-a)

(K/W)

10- 1

tp(s)

10- 3 102103

10110- 2 10- 1

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1

0.05

0.02 0.01

FR4 PCB, mounting pad for cathode 1 cm2

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab364

102

103

Zth(j-a)

(K/W)

10- 1

tp(s)

10- 3 102103

10110- 2 10- 1

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02 0.01

Ceramic PCB, Al2O3, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

IF = 0.1 A; Tj = 25 °C - 320 370 mV

IF = 0.7 A; Tj = 25 °C - 430 490 mV

IF = 1 A; Tj = 25 °C - 460 530 mV

IF = 1 A; Tj = -40 °C - 510 590 mV

IF = 1 A; Tj = 125 °C - 400 480 mV

VFforward voltage

IF = 1 A; Tj = 150 °C - 380 460 mV

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 5 / 13

Symbol Parameter Conditions Min Typ Max Unit

IF = 1 A; Tj = 175 °C - 365 450 mV

VR = 5 V; Tj = 25 °C; tp ≤ 300 µs;

δ ≤ 0.02 ; pulsed

- 1.2 - µA

VR = 10 V; Tj = 25 °C; tp ≤ 300 µs;

δ ≤ 0.02 ; pulsed

- 1.7 - µA

VR = 60 V; Tj = 25 °C; tp ≤ 300 µs;

δ ≤ 0.02 ; pulsed

- 30 60 µA

VR = 60 V; Tj = -40 °C; tp ≤ 300 µs;

δ ≤ 0.02 ; pulsed

- 0.6 10 µA

IRreverse current

VR = 60 V; Tj = 125 °C; tp ≤ 300 µs;

δ ≤ 0.02 ; pulsed

- 14 50 mA

VR = 1 V; f = 1 MHz; Tj = 25 °C - 120 - pFCddiode capacitance

VR = 10 V; f = 1 MHz; Tj = 25 °C - 40 - pF

trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;

Tj = 25 °C

- 4.4 - ns

VFRM peak forward recovery

voltage

IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C - 500 - mV

006aad117

10-2

10-3

10-1

(A)

10-4

VF (V)

0 0.70.5 0.60.40.30.1 0.2

(1)

(2)

(3)

(4) (5) (6)

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 85 °C

(5) Tj = 25 °C

(6) Tj = −40 °C

Fig. 4. Forward current as a function of forward

voltage; typical values

006aad118

10-1

10-2

10-3

10-4

10-5

10-6

10-7

10-8

10-9

(A)

10-10

VR (V)

0 604020

(1)

(2)

(3)

(4)

(5)

(6)

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 85 °C

(5) Tj = 25 °C

(6) Tj = −40 °C

Fig. 5. Reverse current as a function of reverse

voltage; typical values

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 6 / 13

006aab892

VR(V)

0 604020

100

150

200

250

(pF)

f = 1 MHz; Tamb = 25 °C

Fig. 6. Diode capacitance as a function of reverse

voltage; typical values

IF(AV) (A)

0 1.51.00.5

006aad119

0.7

PF(AV)

(W)

0.1

0.2

0.3

0.4

0.5

0.6

(1)

(2)

(3)

(4)

Tj = 175 °C

(1) δ = 0.1

(2) δ = 0.2

(3) δ = 0.5

(4) δ = 1

Fig. 7. Average forward power dissipation as a

function of average forward current; typical

values

006aad120

VR (V)

0 604020

1.0

1.5

0.5

2.0

2.5

PR(AV)

(W)

(1)

(2)

(3)

(4)

Tj = 150 °C

(1) δ = 1

(2) δ = 0.5

(3) δ = 0.2

(4) δ = 0.1

Fig. 8. Average reverse power dissipation as a

function of reverse voltage; typical values

006aad151

VR (V)

0 604020

0.50

0.25

0.75

1.00

PR(AV)

(W)

(1)

(2)

(3)

(4)

Tj = 125 °C

(1) δ = 1

(2) δ = 0.5

(3) δ = 0.2

(4) δ = 0.1

Fig. 9. Average reverse power dissipation as a

function of reverse voltage; typical values

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 7 / 13

006aad152

VR (V)

0 604020

100

PR(AV)

(mW)

(1)

(2)

(3)

(4)

Tj = 85 °C

(1) δ = 1

(2) δ = 0.5

(3) δ = 0.2

(4) δ = 0.1

Fig. 10. Average reverse power dissipation as a

function of reverse voltage; typical values

Tamb (°C)

0 20015050 100

006aad121

0.5

1.0

1.5

IF(AV)

(A)

(1)

(2)

(3)

(4)

FR4 PCB, standard footprint

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 11. Average forward current as a function of

ambient temperature; typical values

Tamb (°C)

0 20015050 100

006aad122

0.5

1.0

1.5

IF(AV)

(A)

(1)

(2)

(3)

(4)

FR4 PCB, mounting pad for cathode 1 cm2

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 12. Average forward current as a function of

ambient temperature; typical values

Tamb (°C)

0 20015050 100

006aad123

0.5

1.0

1.5

IF(AV)

(A)

(1)

(2)

(3)

(4)

Ceramic PCB, Al2O3, standard footprint

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 13. Average forward current as a function of

ambient temperature; typical values

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 8 / 13

Tsp (°C)

0 20015050 100

006aad124

0.5

1.0

1.5

IF(AV)

(A)

(1)

(2)

(3)

(4)

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 14. Average forward current as a function of solder point temperature; typical values

8. Test information

time

trr

IR(meas)

006aad022

Fig. 15. Reverse recovery definition

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 9 / 13

001aab912

time

VFRM

Fig. 16. Forward recovery definition

tcy

006aac658

duty cycle δ =

tcy

Fig. 17. Duty cycle definition

The current ratings for the typical waveforms are calculated according to the equations:

IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with

IRMS defined as RMS current.

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 10 / 13

9. Package outline

08-11-06Dimensions in mm

2.8

2.4

3.7

3.3

1.05

0.75

1.9

1.5

0.6

0.3

0.22

0.10

1.1

0.9

Fig. 18. Package outline SOD123W

10. Soldering

2.9

2.8

4.4

1.62.1 1.2

(2×)

1.1

(2×)

solder lands

solder resist

occupied area

solder paste

1.1

(2×)

1.2

(2×) sod123w_fr

Dimensions in mm

Fig. 19. Reflow soldering footprint for SOD123W

11. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMEG6010ETR v.1 20121010 Product data sheet - -

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 11 / 13

12. Legal information

12.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

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punitive, special or consequential damages (including - without limitation -

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

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with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 12 / 13

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

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Export control — This document as well as the item(s) described herein

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Translations — A non-English (translated) version of a document is for

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between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PMEG6010ETR

High-temperature 60 V, 1 A Schottky barrier rectifier

Product data sheet 10 October 2012 13 / 13

13. Contents

1 Product profile ....................................................... 1

1.1 General description .............................................. 1

1.2 Features and benefits ...........................................1

1.3 Applications .......................................................... 1

1.4 Quick reference data ............................................ 1

2 Pinning information ............................................... 2

3 Ordering information ............................................. 2

4 Marking ................................................................... 2

5 Limiting values .......................................................2

6 Thermal characteristics .........................................3

7 Characteristics .......................................................4

8 Test information ..................................................... 8

8.1 Quality information .........................................

9 Package outline ................................................... 10

10 Soldering .............................................................. 10

11 Revision history ...................................................10

12 Legal information .................................................11

12.1 Data sheet status ............................................... 11

12.2 Definitions ...........................................................11

12.3 Disclaimers .........................................................11

12.4 Trademarks ........................................................ 12

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 October 2012

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PMEG6010ETR,115