Connection Diagram 3 1201 1 1203 3 3 2 1 3 1202 2NC 2 1205 3 1NC 2 3 1204 1 2 1 SOT-23 1 2 Ordering Information Part Number Top Mark Package Packing Method MMBD1201 24 SOT-23 3L Tape and Reel MMBD1202 25 SOT-23 3L Tape and Reel MMBD1203 26 SOT-23 3L Tape and Reel MMBD1204 27 SOT-23 3L Tape and Reel MMBD1205 28 SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 C 150 C Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. (c) 2001Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: MMBD1202/D MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 -- Small Signal Diodes MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 350 mW Derate Above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol VR VF Parameter Breakdown Voltage Forward Voltage Conditions Min. IR = 100 A 100 IF = 1.0 mA 550 Max. Unit V 600 mV IF = 10 mA 660 740 mV IF = 100 mA 820 920 mV IF = 200 mA 0.87 1.0 V IF = 300 mA 1.1 V VR = 20 V 25 nA IR Reverse Current VR = 50 V 50 nA VR = 50 V, TA = 150C 100 A CT Total Capacitance VR = 0, f = 1.0 MHz 2.0 pF trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 4.0 nS www.onsemi.com 2 MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 -- Small Signal Diodes Thermal Characteristics 150 140 130 120 110 1 2 Ta= 25 C 300 Reverse Current, IR [nA] Reverse Voltage, V R [V] Ta= 25 C 3 5 10 20 30 50 250 200 150 100 50 0 100 10 20 Reverse Current, IR [uA] Figure 1. Reverse Voltage vs. Reverse Current BV @ IR = 1.0 to 100 A 50 70 100 Figure 2. Reverse Current vs. Reverse Voltage IR @ VR = 10 to 100 V Ta= 25 C Ta= 25 C 700 Forward Voltage, VF [mV] 450 Forward Voltage, VF [mV] 30 Reverse Voltage, V R [V] 400 350 300 650 600 550 500 250 1 2 3 5 10 20 30 50 450 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Forward Current, IF [uA] Figure 3. Forward Voltage vs. Forward Current VF @ IF = 1.0 to 100 A Figure 4. Forward Voltage vs. Forward Current VF @ IF = 0.1 to 10 mA 1.3 Ta= 25 C Ta= 25 C Total Capacitance [pF] Forward Voltage, VF [V] 1.4 1.2 1.0 0.8 0.6 10 20 30 50 100 200 300 500 1.2 1.1 1.0 0 Forw ard C urrent, I F [m A ] Figure 5. Forward Voltage vs. Forward Current VF @ IF = 10 to 800 mA 2 4 6 8 10 12 14 R everse V oltage [V ] Figure 6. Total Capacitance vs. Reverse Voltage www.onsemi.com 3 MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 -- Small Signal Diodes Typical Performance Characteristics 400 Ta= 25 C 3.5 300 3.0 Current [mA] Reverse Recovery Time [nS] 4.0 2.5 2.0 IF 200 (AV -A V 100 ER AG ER E CT IF IE 1.5 DC U RR EN TmA 0 1.0 10 20 30 40 50 0 60 Figure 7. Reverse Recovery Time vs. Reverse Current 400 300 SOT-23 Pkg 200 100 0 50 100 100 150 Figure 8. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA) 500 0 50 Ambient Temperature, T A [ C] Reverse Current [mA] Power Dissipation, PD [mW ] ) 150 200 Average T em perature, I O [ C ] Figure 9. Power Derating Curve www.onsemi.com 4 MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 -- Small Signal Diodes Typical Performance Characteristics (Continued) 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 5 MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 -- Small Signal Diodes Physical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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