MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes
Publication Order Number:
MMBD1202/D
© 2001Semiconductor Components Industries, LLC.
October-2017, Rev. 2
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 /
MMBD1205
Small Signal Diodes
Ordering Information
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Part Number Top Mark Package Packing Method
MMBD1201 24 SOT-23 3L Tape and Reel
MMBD1202 25 SOT-23 3L Tape and Reel
MMBD1203 26 SOT-23 3L Tape and Reel
MMBD1204 27 SOT-23 3L Tape and Reel
MMBD1205 28 SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 100 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1.0 second 1.0 A
Pulse Width = 1.0 microsecond 2.0
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
SOT-23
1
2
3
1201 1202
1203 1204
1
3
21
2
2
3
3
3
1
2NC
1205
2
3
1
1NC
Connection Diagram
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes
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2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PD
Power Dissipation 350 mW
Derate Above 25°C2.8mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
VRBreakdown Voltage IR = 100 μA100V
VFForward Voltage
IF = 1.0 mA 550 600 mV
IF = 10 mA 660 740 mV
IF = 100 mA 820 920 mV
IF = 200 mA 0.87 1.0 V
IF = 300 mA 1.1 V
IRReverse Current
VR = 20 V 25 nA
VR = 50 V 50 nA
VR = 50 V, TA = 150°C 100 μA
CTTotal Capac i t a n c e VR = 0, f = 1.0 MHz 2.0 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω4.0 nS
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes
Typical Performance Characteristics
Figure 1. Reverse Voltage vs. Reverse Current
BV @ IR = 1.0 to 100 μAFigure 2. Reverse Current vs. Reverse Voltage
IR @ VR = 10 to 100 V
Figure 3. Forward Voltage vs. Forward Current
VF @ IF = 1.0 to 100 μAFigure 4. Forward Voltage vs. Forward Current
VF @ IF = 0.1 to 10 mA
Figure 5. Forward Voltage vs. Forward Current
VF @ IF = 10 to 800 mA Figure 6. Total Capacitance vs. Reverse Voltage
110
120
130
140
150
1 2 3 5 10 20 30 50 100
Ta= 25 C
Reverse Voltage, V
R [V]
Reverse Current, IR [uA]
°
0
50
100
150
200
250
300
10 20 30 50 70 100
Ta= 25 C
Reverse Current, I
R
[nA]
Reverse Volta
g
e, V
R
[
V
]
°
250
300
350
400
450
1 2 3 5 10 20 30 50 100
Ta= 25 C
Forward Voltage, V
F
[mV]
Forward Current, IF [uA]
°
450
500
550
600
650
700
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
Forward Voltage, V
F
[mV]
Forward Current, IF [mA]
°
0.6
0.8
1.0
1.2
1.4
10 20 30 50 100 200 300 500
Ta= 25 C
Forward Voltage, V
F
[V]
Forward Current, I
F
[mA]
°
0 2 4 6 8 10 12 14
1.0
1.1
1.2
1.3
Ta= 25 C
Total Capacitance [pF]
Reverse Voltage [V]
°
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MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes
Typical Performance Characteristics (Continued)
Figure 7. Reverse Re covery Time vs. Reverse Current Figure 8. Average Rectified Current (IF(AV)) vs.
Ambient Temperature (TA)
Figure 9. Power Derating Curve
10 20 30 40 50 60
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ta= 25 C
Reverse Recovery Time [nS]
Reverse Current [mA]
°
0 50 100 150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, TA [ C]
°
0 50 100 150 200
0
100
200
300
400
500
SOT-23 Pkg
Power Dissipation, P
D
[mW]
Average Temperature, IO [ C]
°
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4
MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 — Small Signal Diodes
Physical Dimensions
Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
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5
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