TOSHIBA 015Z2.0~015Z12 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 01522.0~015212 CONSTANT VOLTAGE REGULATION APPLICATIONS Unit in mm e Small Package Nominal voltage tolerance about +2.5% (2.0V~12V) CATHODE MARK MAXIMUM RATINGS (Ta = 25C) 0+0.05 CHARACTERISTIC SYMBOL | RATING UNIT Power Dissipation P* 150 mW 0.34005 0.13005 Junction Temperature Tj 125 C | Storage Temperature Range Tstg 5~125 C t 3 Sc ~~ * Mounted on a glass epoxy circuit board of 20x 20mm, Pad dimension of 44mm. SSC JEDEC _ ELECTRICAL CHARACTERISTICS KIAJ _ TOSHIBA 1-1F1A Weight : 1.9mg (See Page 2~3) Marking Example 1 : 015Z2.4-x Example 2 : 015Z12-x q 2x4 OO 12x PIN ASSIGNMENT (TOP VIEW) O}+O 1 2001-10-04TOSHIBA 015Z2.0~015Z12 ELECTRICAL CHARACTERISTICS (Ta = 25C) ZENER DYNAMIC [KNEE DYNAMIC] REVERSE VOLTAGE IMPEDANCE | IMPEDANCE CURRENT TYPE No. x Wz (V) Iz | 2z(.)| I |ZzK(Q) | Iz |IR(wA)] VR MIN. | MAX. | (mA) | MAX. | (mA) | Max. | (A) | max. | o1sza.o%* [LX | 185 | 205 | 5 | 100 | 5 | 1000 05 | 120 | 05 z | 195 | 2.15 oiszao%* LX | 205 | 226 | 100 | 5 | 1000 05 | 120 | 10 Zz | 216 | 2.38 015Z2.4 X | 2.28 | 2.50 | 5 100 5 | 1000 0.5 120 | 1.0 Zz | 240 | 2.60 0152Z2.7 X | 2.50 | 275 | 5 110 5 | 1000 0.5 120 | 1.0 z | 2.65 | 2.90 015Z3.0 X | 2.80 | 3.05 | 5 120 5 | 1000 0.5 50 | 1.0 z | 2.95 | 3.20 015Z3.3 X | 3.10 | 3.35 | 5 130 5 | 1000 0.5 20 | 1.0 z | 3.25 | 3.50 01523.6 X | 340 | 3.65 | 5 130 5 1000 0.5 10 | 1.0 z | 3.55 | 3.80 015Z3.9 X | 3.70 | 3.97 | 5 130 5 1000 0.5 10 | 1.0 z | 3.87 | 4.10 x | 400 | 4.23 01574.3 y | 413 | 435 | 5 130 5 | 1000 0.5 5 | 10 z | 425 | 4.50 x | 440 | 463 01524.7 y | 453 | 4761 5 120 5 | 1000 0.5 5 | 10 z | 466 | 4.90 x | 480 | 5.07 01525.1 y | 497 | 524 | 5 70 5 | 1000 0.5 1 | 15 Zz | 514 | 5.40 x | 530 | 5.63 0152Z5.6 y | 543 | 581 | 5 40 5 900 0.5 1 | 25 z | 5.61 | 6.00 x | 5.80 | 6.20 01526.2 y | 600 | 639| 5 30 5 500 0.5 1 | 30 z | 619 | 6.60 x | 640 | 6.80 0156.8 y | 660 | 7.02 | 5 25 5 150 0.5 05 | 5.0 Zz | 682 | 7.20 * : Test time : t=30ms *X + Product by order. 2 2001-10-04TOSHIBA 015Z2.0~015Z12 ELECTRICAL CHARACTERISTICS (Ta = 25C) ZENER DYNAMIC |KNEE DYNAMIC| REVERSE VOLTAGE IMPEDANCE | IMPEDANCE CURRENT TYPE No. * Vz(V) uy Z7,(Q) 7 27K (Q) 1 RUA vp MIN. | MAX. | (MA) | max. | (mA) | max. | (mA) | max. | x 7.00 | 7.43 015Z7.5 Y 7.23 | 7.66 | 5 23 5 120 0.5 0.5 6.0 Zz 7.46 | 7.90 x 7.70 | 8.16 0152Z8.2 Y 7.96 | 8.43 5 20 5 120 0.5 0.5 6.5 Z 8.23 | 8.70 x 8.50 | 9.00 0152Z9.1 Y 8.80 | 9.30 | 5 18 5 120 0.5 0.5 7.0 Z 9.10 | 9.60 x 9.40 | 9.93 015Z10 Y 9.73 | 10.26 | 5 15 5 120 0.5 0.5 8.0 Z | 10.06 | 10.60 x | 10.40 | 10.98 015Z11 y | 10.73 | 11.26 | 5 15 5 120 0.5 0.5 8.5 z | 11.06 | 11.60 x | 11.40 | 11.93 015212 y | 11.73 | 12.26 | 5 15 5 110 0.5 0.5 9.0 z | 12.06 | 12.60 * : Test time : t=30ms 3 2001-10-04TOSHIBA Iz (A) ZENER CURRENT DYNAMIC IMPEDANCE Zz (Q) CAPACITANCE (Cj (pF) 17 - Vz (Vz: 2.0~6.2) LL SL iD) Sf oe PALL AZZ ZA AF a a a oo Cf ff 1k 300 100 30 10 280 240 200 160 120 80 40 ZENER VOLTAGE Vz (V) ZZ VZ Ta=25C f=1kHz 3 5 10 30 ZENER VOLTAGE Vz (W) Cj Vz Ta=25C f=1MHz VR=0V 3 5 10 30 ZENER VOLTAGE Vz (V) < A im a) a eal = 5 1004 2 me 2 10 BS ee N ly m oe wo 2 oo e 2 Qo DYNAMIC IMPEDANCE Z7 (Q) = wo oo oO 1 0.1 2 2 SQ _ oo bo VOLTAGE yz, (%/C)} 0.04 0.08 TEMPERATURE COEFFICIENT OF ZENER 01522.0~015212 Iz Vz (Vz, : 6.8~12) Ta=25C t=30ms 10 15 20 25 ZENER VOLTAGE Vz (V) Zz Iz 0305 1 3 5 10 30 50 100 ZENER CERRENT Iz (mA) YZ VZ 30 20 10 OQ 3 5 10 30 ZENER VOLTAGE Vz (V) I 2 TEMPERATURE COEFFICIENT OF ZENER VOLTAGE yz (mV /C) | N o 2001-10-04TOSHIBA FORWARD CURRENT Ip (mA) If VF 100 01522.0 50 30 10 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE VF (V) POWER DISSIPATION P (mW) 01522.0~015212 P Ta Mounted on a glass epoxy circuit board of 20X20mm pad dimension of 4xX4mm. 25 50 5 100 125 150 AMBIENT TEMPERATURE Ta (C) 2001-10-04TOSHIBA 015Z2.0~015Z12 RESTRICTIONS ON PRODUCT USE 000707EAA @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 6 2001-10-04