MICFOSEMA Fersererie Po ontgameryville, mermpemmrecmrcemm Tel: (215) 631-9840 2N4429 4431 RFE & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR GLASS GC APPLICATIONS FEATURES HIGH POWER GAIN PACKAGE 2N4431 BW @ GHz MES6 EN4430 SEW 1GH2 MTSS 24420 WG TG TO-TT TA DESCRIPTION TO-117 A (M148) MTG (M127) This family af eingla chip cilican. transistors: was desiqned tor rellable-aperation inthe 1 GHz region, BRANDING ORDER CODES Precise aptaxial growth, diffusion, photoengraving and injection molding techniques sre employed 16 BNGdBy SOT tabrinata each device. The family is intended for andarg spri7o Clase.A, B..or C amplifier, osellator, and multiplier enAaang SOAS operations In the UHE region. PIN CONNECTION i A PIN 1 2 & @ bone : 5 eN649, -B 8&8 : = BNA: CB FE 8B 7 eNSa29 8 & 8&8 3 SUARNNSSS-be SABENA ABSOLUTE MAXIMUM BATINGS (7, = 26C) Symbol Parameter 2Nd43i andqyG 2haa2g ant Vere. p Collector to: Bran Voltages Bo. 86.0 85.5 ee Veeco. 2 Ogllscter te Eminer Vattage 40,0 AOD SoU 3 Emitter io Base Voltage 35 a5 aes Gonlinucus Collector Gurren 20 wa aes mA Total Dissipation at SSC. Stud 18) 13.0 8.0 WwW There: Resistance ay {78 38.0 oA (lURCTOR te std) Ty Junction Temperatura 200 2og SOG 8G Esty Storage. Tariperature oS lo- Phd = BS Ao SO =thio 80 2 6 May 1989 eS2N4429 -+ 4491 ELECTRICAL CHARACTERISTICS STATIC - eN443i |) 2N4430 | 2N4429 - Symbol Parameter Test Conditions Min, Max. Min. [Mox. Minv Max, Unit leex | Collector CutofiGurrent Vie S8V 40 20 1.08] amd . Veg et S Bcee | Collector to Eminer lee BOMAS ts = 6 400 40.0 Be Breakdown Voltage fe = BOmA, bye Q 350 Vv Veen | Collector to Emitter He TDL lg SOMA BO 86.6 Breakdown Voltage : - Ros Ok deo 2UMA 58.0 Ye Bsac [| Emitter to Base: Breakdown) leo Ih8DmA 38 M Voltage le-= DOA a v loo DADA a8 We Hee | PO Current Gain Vor <SVitg = 100MA 20 [200 | 20. | 200 Vor = OV, lo @ SOMA 20 |. 200 DYNAMIC . eN4431 | 2N4430 | 2N4d29 Bymbaoi Parameter Test Conditions Min. (Max. Min. Max. Min. Max, Unit ty Gain Bandwidth @ ShGmHzi Vee = POV, Loe TODA SOC Go9 Mite Vex @ BDV, le = S0miA 700 MHz Gey | Butpur Capacitance Vee = 20M) fo = LOMMZ 40 5.0 35-1 pF fee DC Cured Gain Vor = BV tos 2A & Voge s S.0V, dove 1.0A 4 Vou =S.0, do = 400mA 5 Paue Rowse Chaboul ly 2 TROOMBZ, Pin = 87 [50 We Vor = 28V fy = TOOOMZ, Pia @ PSOMW 28 W ms Gollector . Eiciency > 35 face TOQOMBZ, Pig. = SOOMW 1a We . ty SOOME ESF ine FEY mv2N4429 = 4401 TEST CIRCUIT TA GHe Vest Cire {2NA4 31/2 Nas SO PNAS 29} OUTEUT | nl XE__O OO CL sap t BA O0F 2STUB a INPUT j TUNES y 500 { 2S THe : FUNER { 1 DOREY + | i 100 jad = I ' = ooh we ee ann eee a oe = 1 TORN NOL 2 WERE = oN, Og COC ZOHAN SON IMG Fina2N4429 ~ 4491 POWER OUT vs. FREQUENCY (AN4441) POWER OUT vs, PREQUENCY (ENS4 an} Ba a Vie 28y iiingy 6) x Vege SOV ne Ch an 8.5 * Sy Pa & hte E : Diy Z 45 & i aa oy Y & 2 hao e 3 Ha te Hd SURE Pei 9 1190 ERKE g ay S00 ety SOO TH aD: FREQUEMS MHz FARMED > MMe SOUZA! OS SSHENS ae 2 Vee SAB Chas OY % a : pa { fois 3 = _ a aA & aac 280 FG A090 100 PIA PREQUENC Mie SASS AAR cee 38PACKAGE MECHANICAL DATA 2N4420 - Ada TORTTEA ese "7 A. B Mineo, Be & { j tod a nl bo cyt . Pepe VERT Fak & SOBA Minimum Maxim neh nim inehdmin A S1Q25.04 B 840.61 0540.86 C BIO BS BOOT A? G 2003/0 .08 DONS Ee AOE 7 SSOISO FE segs 445/368 a 0557.40 0651.65 H ASST O8 ABRIL | ATS4.28 2108.92 i2N4429 5 4431 PACKAGE MECHANICAL DATA iri KATEE | " i ee vl 4 MTL . e a y a B : \ QA it (| , wae a 7 re sce aes F B. afte 4 a 4. Pe BA UME 28 - & ~ e SRA OR Minima Max iimnaun Minimum Maximunt inches Inches inches inches & BGS HO & wiry 2o0 B BS 20S H Bag ABO Go eo ASS } 485 465 D ABO a8 J Bos 268 & AID ARS K Ais 35 F AE Oe Le 350 $5