Ordering number: EN1425C No.1425C 2SA1380/2SC3502 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications Features - High breakdown voltage : Vogo 2 200V. - Small reverse transfer capacitance and excellent high-frequency characteristics : Cre=1.2pF(NPN),1.7pF(PNP) Vop =30V. - Adoption of FBET process. ( ):25A1380 Absolute Maximum Ratings at Ta= 25C unit Collector-to-Base Voltage Vcso ()200 Vv Collector-to-Emitter Voltage Vcro ()200 Vv ' Emitter-to-Base Voltage VEBO . ()5 Vv Collector Current Ic ()100 mA Collector Current (Pulse) Icp ()200 mA Collector Dissipation Po , 1.2 Ww Tc=25C 5 Ww Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta =25C min typ max unit Collector Cutoff Current Icpo Vep=()150V, In=0 ()0.1 pA Emitter Cutoff Current Izzo Vep=()4V,I=0 ()0.1 uA DC Current Gain _ bre Veg=()10V, Ic =()10mA 40% 320% Gain-Bandwidth Product fp Vor=()80V, Ic =()10mA 150 MHz Output Capacitance "Cob Von =()30V, f= 1MHz 1.7 pF ; (2.6) pF Reverse Transfer Capacitance Cre Vop=()30V, f= 1MHz 1.2 pF (1.7) pF C-E Saturation Voltage Vexsat) Ic=()20mA,Ip=()2mA (-)0.6 V B-E Saturation Voltage Varsat) Ic=(~)20mA,Ip=()2mA (-)1.0 V C-B Breakdown Voltage Veprycpo Ic=()10pA, Ip =0 ()200 V C-E Breakdown Voltage Vigryceo Ic=()1lmA, Rgp= ()200 Vv E-B Breakdown Voltage Vipryeso Ip=()10pA, I=0 - ()5 Vv x : The 2541380/25C3502 are classified by 10mA hpp as follows: | 40 c so | 60 D 120 | 100 200 | 160 F 320 | Package Dimensions 2009B (unit : mm) 3 4 3.0% 1: Emitter JEDEC: TO-126 2: Collector 3: Base SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/4 . 235 me 7997076 OOcoees 634 ny 44 25A1380/25C3502 _Vce 28C3502 < : : z | | 2 2 = = 5 B 3 3 5 oO oO Ss Pa =0 Ip=0 o -- 2? 3 -4 - -6 -7 - -9 -10 n Collector-to-Emitter Voltage, Von V Collector-to-Emitter Voltage,Vcz V Ic_ Vee _Vce 2841380 2803502 Collector Current,Ig mA Collector Current,Ip mA Collector-to-Emitter Voltage,Voz V Collector-to-Emitter Voltage, Vog V w lc VBE Ic. Vee 2SA1380 (2803502 Vce=10V . Ver=1l0V 1) r f sq <q 0 g E | | 2 2 [ s $ o s . a tof of $ s o E 6 Wrerpe E. 60 lo ORD R af Nf} 5. BP et se oO & oO Ub apa & 3 a f Bs 40 sg 4 } 2& x fl | 5 oO 2 J : 0 0 O22. 04 6 08 10 0 0.2 0.4 06 0.8 1.0 Base-to-Emitter Voltage,Vpz V Base-to-Emitter Voltage, Vpy ~ V hre Ic . hee Ic . 28A1 . cE=10V a . a 4 a 4 & 3 ~~ _ 2 a E i 5 2 R a 10 10 | Collector Current,Ic mA . Collector Current,Ig mA 236 ME 7997076 0020230 356 28A1380/2SC3502 25A1380 Vop=30V Gain-Bandwidth Product,fp MHz -10 -0 -10 Collector Current,I, mA Cob Vcp 25A1380 f=1MHz 3 Output Capacitance,Cob pF 6 1.0 -I0 Collector-to-Base Voltage, Voz V Cre Vcp ~10 28A1380 f=1MHz 3 Reverse Transfer Capacitance,Cre pF 6 =1.0 ~10 Collector-to-Base Voltage, Vog V VcE Ic 10 t Saturation Voltage, Vorsat V I 2 Collector-to-Emitter -10 ? *-10 Collector Current,I> mA _ MM 7997076 0020231 292 oe g Gain-Bandwidth Product,fp MHz Collector Current,Ip mA Cob Vv 28C3502 f=1MHz Output Capacitance,Cob pF Collector-to-Base Voltage, Von V Cre Vee Reverse Transfer Capacitance,Cre pF Collector-to-Base Voltage, Voy V Vv ~ Ie Ioflg=1 -Vv Saturation Voltage, Vonjeat) 2 Collector-to-Emitter Collector Current,Ip mA 237 _ 28A1380/2SC3502 VeE(sat) ~ Ic or 2803502 IoIp=10 I/Ig = 10 Saturation Voltage, Vpreat) V Saturation Voltage, Vpmeay V . Ea Eg fi a 3 3 : : a a -10 =10 -100 10 : 10 106 Collector Current,Jg mA ~ Collector Current,I;. mA ASO . ASO 2SA1380 lop < I E < S | | 2 a s : | Oo oO 8 8 3 2 8 8 -0 -10 10 10 Collector-to-Emitter Voltage, Vong V Collector-to-Emitter Voltage, Vop V 14 : Pe - Ta Pc Te , 28A1380/28C3502 8 28A1380/28C3502 = 1.2 " z 5 : \ NX N\ o 1.0 . N\ A N\ . Ay 4 a d NX 5 Ny 2 : B 0.8F 4; 8 N a NS A gh a Ns, : 3g 2 0.6 > at a Ne A he i 9 8 NN g 2 g o4 N 8 3 . & N 2 0.2 NS o 1 NY N 6 MN 0 20 40 60 80) = 100 1720 6140160 oO 20 40 60 80 10 20. 1440 160 Ambient Temperature, Ta C Case Temperature,Te C \ 238 WM 7997076 0020232 129 a