OPTEK TECHNOLOGY INC 46E D MB 6798580 000141? TS. my OTK roduc etin DETER Merch i990 T-H-0S CLVA Zener Diode Die g .036 + .003 p Top Metal: Aluminum (Anode) Back Metal: Gold (Cathode) 036 + .003 011 + .003 | + Dimensians in 010 + .002 _, Inches Features The CLVA Die is available in types and tolerances of the general purpose series with 100% testing of Zener Volt- age, and reverse leakage as standard. The die is fully passiviated using silicon dioxide and silicon nitride over coat for surface protection over the active junction. The back contact is gold and is compatible with eutectic or epoxy mounting. The top contact is an aluminum - silicon alloy suitable for a variety of wire bonding techniques. The CLVA Die exhibits considerably sharper breakdown characteristics than conventional Zeners in the 4-10 volt range. Above 10 volts the break down mechanism of Zener regulators is avalanche, which produces a very sharp knee and provides good voltage regulation. Below 10 volts the field emission phenomenon starts, and as the operating voltage decreases, field emission accounts for an increasingly higher percentage of the die breakdown mechanism. Electrical Characteristics General Purpose CLVA Zeners Nominal Zener Maximum Dynamic? Maximum Noise** = Maximum Reverse Voltage @ Iz Impedance Zz @lIz Density @ 250A Leakage In @ Vr Type Vde Ohms mA pV/ VHz pA Vde CLVA43A 4.3 18 20 4 4.0 1.5 CLVA4TA 4.7 15 10 4 4.0 1.5 CLVASIA 5.1 15 5 4 0.1 2.0 CLVAS5S6A 5.6 40 1 4 0.05 3.0 CLVA62A 6.2 50 1 4 0.05 4.0 ICLVAG8A 6.8 50 1 4 0.05 5.0 CLVA75A 7.5 100 1 4 0.01 6.0 CLVA82A 8.2 100 1 4 0.01 6.5 CLVASIA 9.1 100 1 4 0.01 8.0 CLVA100A 10.0 100 1 4 0.01 9.0 Ve @ 200mA = 1.5V Max. ' A suffix denotes + 5% Vz tolerance, B suffix denotes + 2% Vz tolerance. 2 3 Measured @ DC test current with 10% AC superimposed (60 Hz rms). 1000 Hz to 3000 Hz, see Noise Measurement Circuit. These parameters are verified by wafer lot acceptance testing. Optek Technology, Inc. 1215 W. Crosby Road, Carrollton, Texas 75006 (214) 923-2200 TLX 423-2200 Fax (214) 423-250 36 OPTEK TECHNOLOGY INC H8E D MM 6798580 0001413 999 MM OTK CLVA Zener Diode Die TOs High Performance CLVA Zeners (all electrical characteristics shown are JEDEC registered values for IN6082 through IN6091) Normal Maximum? 4 Maximum Maximum 4 Maximum Regulation Zener Impedance Reverse Leakage Noise Density Iz-!zi Voltage @ Iz Zz Iz In @ Vr @ 250 mA "Vz lz Type Vde Ohms mA wA = Vde mv/ V Hz Vde pA OAC6082 4.3 18 20 20 1.5 1 0.75 2.0 OAC6083 4.7 10 10 2.0 2.0 1 0.50 1.0 OAC6084 5.1 10 5 2.0 3.0 1 0.30 0.25 OAC6085 5.6 40 1 2.0 45 1 0.10 0.05 OAC6086 6.2 45 1 0.5 5.6 1 0.10 0.01 OAC6087 6.8 50 1 0.05 6.2 1 0.10 0.01 OAC6088 7.5 50 1 0.01 68 1 0.10 0.01 OAC6089 8.2 60 1 0.01 7.5 1 0.10 0.01 OAC6090 9.1 60 1 0.01 8.2 2 0.10 0.01 OAC6091 10.0 60 1 0.01 9.1 2 0.10 0.01 Ve @ 200mA = 1.2V Max. ' Suffix denotes Vz tolerance: None = + 20%, A suffix is + 10%, B: + 5%, C:+ 2%. 2 Measured at DC test current with 10% AC RMS superimposed (60 Hz). 3 Measured from 1000 Hz to 3000 Hz, see Noise Measurement Circuit. These parameters are verified by wafer lot acceptance testing. High Performance Zener Diodes (Ap electrical characteristics shown are JEDEC registered values for IN5521 through IN5530) Reverse Leakage Nominal Maximum * > Current Maximum Maximum Maximum Regulation Zener Test Dynamic Vr Zener Noise* ,y.25.6 Low Vz Voltage Current Impedance None,A B,C Current iz = 250 Current @lz Iz Zz@\lz Irn suffix suffix Izu pA Volts Izu Type * Vde mA Ohms pA Volts Volts mAdc mV/VHz mAdc OAC5521 43 20 18 3 1.0 15 88 0.5 0.75 2.0 OAC5522 4.7 10 22 2 1.5 2.0 81 0.5 0.60 1.0 OAC5523 5.1 5 26 2 2.0 2.5 75 0.5 0.65 0.25 1OAC5524 5.6 3 30 2 3.0 3.5 68 1 0.30 0.25 OAC5525 6.2 1 30 1 4.5 5.0 61 1 0.30 0.25 OAC5526 6.8 1 30 1 5.5 6.2 56 1 0.10 0.01 OAC5527 7.5 1 35 0.5 6.0 6.8 51 2 0.05 0.04 OAC5528 8.2 1 40 0.5 6.5 7.5 46 4 0.05 0.01 OAC5529 9.1 1 45 0.1 7.0 8.2 42 4 0.05 0.01 1OAC5530 10.0 1 60 0.05 8.0 9.1 38 4 0.10 0.01 Ve @ 200mA = 1.1V Max. ' Numbers shown are + 20%, A suffix is + 10%, B: + 5%, C:+ 2%. 2 Guaranteed for B and C, suffix only. 3 Measured at DC test current with 10% AC RMS superimposed (60 Hz). * 1000 Hz to 3000 Hz, see Noise Measurement Circuit. 5 AVz is maximum difference between Vz at lz and Vz. at Iz. These parameters are verified by wafer lot acceptance testing. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road, Carrollton, Texas 75006 (214) 323-2200 TLX 323-2200 Fax (214) 323-2396 37 OFTEK TECHNOLOGY INC 4OE D MM 6794580 0001419 825 M OTK 7-tl-OS~ CLVA Zener Diodes Typical Performance Curves in Do-7 Axial Package Temperature Coefficient vs. Power Derating with Dynamic Impedance vs. Breakdown Voltage Zener Voltage (25C to 100C) Temperature e8 2 te s 2 & 2s OVMAMIC IMPEDANCE @ TEST CURRENT {Ones} s TEMPERATURE COEFFICIENT @ TEST CURRENT (%/C) MAXIMUM ALLOWABLE POWER DISSIPATION imi ~ s 80 120 140 160 180 Zener Voltage vs. Zener Current 107 1 10-# Zener Current (Amperes) Nolse Measurement Circuit AMMETER 51K AMPLIFIER FILTER | : fo = 2 kHz Resistor f = 1kHz Vout Supply io = 8 kHz | _ BW = 2kHz o Noise is specified in microvolts per square root hertz. The maximum noise in a particular application may be calculated from the following equation: Noise = (Np YBandpass of circuit (In pVrms) where No is the noise density stated in the specification. The circuit used to measure Np is shown below. Vout Noise Density (volts per square root hertz) = a in where: BW = Filter Bandwidth (hertz) Vout = Output Noise (Vrms) Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road, Carrollton, Texas 75006 (214) 323-2200 TLX 323-2200 Fax (214) 323-2306 38