TN2404K/TN2404KL/BS107KL
Vishay Siliconix
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
1
N-Channel 240 -V (D-S) MOSFET
PRODUCT SUMMARY
Part Number VDS Min (V) rDS(on) (W)VGS(th) (V) ID (A) Qg (Typ)
TN2404K
240
4 @ VGS = 10 V 0.8 to 2.0 0.2
487
TN2404KL/BS107KL
240
4 @ VGS = 10 V 0.8 to 2.0 0.3
4
.
87
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 4 W
DSecondary Breakdown Free: 260 V
DLow Power/Voltage Driven
DLow Input and Output Leakage
DExcellent Thermal Stability
DLow Offset Voltage
DFull-Voltage Operation
DEasily Driven Without Buffer
DLow Error Voltage
DNo High-Temperature
“Run-Away”
DHigh-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
DTelephone Mute Switches, Ringer Circuits
DPower Supply, Converters
DMotor Control
TN2404KL
Device Marking
Front View
“S” TN
2404KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
Marking Code: K1ywl
K1 = Part Number Code for TN2404K
y = Year Code
w = Week Code
l = Lot Traceability
TN2404K
BS107KL
Device Marking
Front View
“S” BS
107KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
ORDERING INFORMATION
Standard
Part Number Lead (Pb)-Free
Part Number Option
TN2404K-T1 TN2404K-T1—E3 With Tape and Reel Folding Option
TN2404KL-TR1 TN2404KL-TR1—E3
Spool Option
BS107KL-TR1 BS107KL-TR1—E3 Spool Option
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TN2404K TN2404KL/BS107KL Unit
Drain-Source Voltage VDS 240
V
Gate-Source Voltage VGS "20
V
Continuous Drain Current (TJ = 150
_
C)
TA= 25_C
ID
0.2 0.3
Continuous Drain Current (TJ = 150_C) TA= 70_CID0.16 0.25 A
Pulsed Drain CurrentaIDM 0.8 1.4
Power Dissipation
TA= 25_C
PD
0.36 0.8
W
Power Dissipation TA= 70_CPD0.23 0.51 W
Thermal Resistance, Junction-to-Ambient RthJA 350b156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
www.vishay.com
2Document Number: 72225
S-41761—Rev. B , 04-Oct-04
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA240 257
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA0.8 1.65 2.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
VDS = 192 V, VGS = 0 V 1
mA
Zero Gate Voltage Drain Current IDSS TJ = 55_C10 mA
On State Drain Currentb
VDS = 10 V, VGS =10 V 0.8
A
On-State Drain Current
b
ID(on) VDS = 10 V, VGS = 4.5 V 0.5 A
VGS = 10 V, ID = 0.3 A 2.2 4
Drain-Source On-ResistancebrDS(on) VGS = 4.5 V, ID = 0.2 A 2.3 4 W
VGS = 2.5 V, ID = 0.1 A 2.4 6
Forward Transconductancebgfs VDS = 10 V, ID = 0.3 A 1.6 S
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 V
Dynamica
Total Gate Charge Qg4.87 8
Gate-Source Charge Qgs VDS = 192 V, VGS = 10 V, ID = 0.5 A 0.56 nC
Gate-Drain Charge Qgd 1.53
Turn On Time
td(on) 5 10
Turn-On Time trVDD = 60 V, RL = 200 W12 20
nS
turn
-
Off Time
td(off)
VDD = 60 V
,
RL = 200 W
ID ] 0.3 A, VGEN = 10 V, RG = 25 W35 60
n
S
t
urn-
Off Ti
me
tr16 25
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
50
100
150
200
250
300
0 1020304050
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0123456
0.0
0.3
0.6
0.9
1.2
1.5
1.8
012345
VGS = 10 thru 3 V TC = −55_C
125_C
25_C
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
− Drain Current (A)ID
VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
2 V
2.5 V
− On-Resistance (rDS(on) W)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
−50 −25 0 25 50 75 100 125 150
0
2
4
6
8
10
012345
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VDS − Drain-to-Source Voltage (V)
Crss Coss
Ciss
VDS = 192 V
ID = 0.5 A
ID − Drain Current (A)
VGS = 4.5 V
ID = 0.2 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
C − Capacitance (pF)
VGS
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
VGS = 10 V
ID = 0.3 A
VGS = 4.5 V
rDS(on) − On-Resiistance
(Normalized)
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
www.vishay.com
4Document Number: 72225
S-41761—Rev. B , 04-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
1
2
3
4
5
6
7
8
0246810
TJ = 150_C
10
0.001
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
− On-Resistance (rDS(on) W)
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
− Source Current (A)IS
TJ = 25_C
−0.5
−0.4
−0.3
−0.2
−0.1
−0.0
0.1
0.2
0.3
−50 −25 0 25 50 75 100 125 150
ID = 250 mA
Threshold Voltage
Variance (V)VGS(th)
TJ − Temperature (_C)
1
0.1
0.01
TJ = −55_C
ID = 50 mA
ID = 100 mA
10−310−21 10 60010−1
10−4100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA =350_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
ID = 10 mA
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 K
1
0.01
0.1
0.1 1 10010 1 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
(TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only)
Normalized Effective Transient
Thermal Impedance
t1 − Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2
Vishay Siliconix maintains worldw ide manufacturing capability. Products may be manufactured at one of several qualified locati ons. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72225.