TQM7M5005H
Data Sheet
GSM/EDGE Multi-mode Power Amplifier Module
Functional Block Diagram
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Revision D, December 07, 2009 1
Features
• Very compact size – 5×5×1.0 mm3.
• High GSM efficiency – GSM 850 55%,
GSM900 55%, DCS 49%, PCS 49%.
• High EDGE efficiency – GSM 850 22%, GSM
900 22%, DCS 25%, PCS 24%
• Positive supply voltage – 3.0 to 4.5 V
• 50 Ω input and output impedances
• GPRS class 12.
• CMOS band select and internal closed-loop
power control for GSM Operation.
• High-reliability InGaP technology.
• Ruggedness 10:1
• No external Vref Required
Applications
• GSM/EDGE handsets
• GSM/EDGE wireless cards & data links
Package Style
Package Size: LGA 5 x 5 x 1.0 mm
RFIN_DCS
RFIN_GSM
VBATT
VRAMP
MODE
BS
TX_EN
RFOUT_DCS
RFOUT_GSM
Ground
Top View
Logic
Power Control
VRAMP
VBATT
TX_EN
Band Select
GSM 850 / 900 In GSM 850 / 900 Out
Mode Select
DCS / PCS In DCS / PCS Out
Product Description
The TQM7M5005H is an extremely small (5x5x1.0mm3) multi-mode power
amplifier module for GSM/EDGE applications. This module has been optimized
for high EDGE efficiency and EDGE power class E2 operation while maintaining
high GSM/GPRS efficiency.
The module incorporates two highly integrated InGaP power amplifier die with a
CMOS controller. The CMOS controller implements a fully integrated closed-loop
power control within the module for GSM Operation. This eliminates the need for
any external couplers, power detectors, current sensing etc., to assure the output
power level. The latter is set directly from the Vramp input from the DAC. The
module has Tx enable, band select, mode (EDGE or GSM) inputs. Module
construction is a low-profile over-molded land-grid array on a halogen-free
laminate.
Electrical Specifications
850 Band 900 Band DCS Band PCS Band Units
Typ Typ Typ Typ
GSM Pout 35 35 33 33 dBm
Efficiency 55 55 49 49 %
Pin3333
dBm
EDGE Pout 28.5 28.5 28 28 dBm
Efficiency 22 22 25 24 %
Gain 32 32 35 35 dB
A
CPR
(400KHz) 62 62 62 62 dBc
Parameter
