IntelliMAXTM Dual-Input Single-Output Advanced Power Switch with True Reverse-Current Blocking Features Description DISO Load Sw itches Input Supply Operating Range: 1.5 V ~ 5.5 V RON 50 m at V IN=3.3 V Per Channel (Typical) True Reverse-Current Blocking (TRCB) Fixed Slew Rate Controlled 130 s for < 1 F COUT ISW: 1.5 A Per Channel (Maximum) Quick Discharge Feature on FPF1321 Logic CMOS IO Meets JESD76 Standard for GPIO Interface and Related Pow er Supply Requirements ESD Protected: - Human Body Model: >6 kV - Charged Device Model: >1.5 kV - IEC 61000-4-2 Air Discharge: >15 kV - IEC 61000-4-2 Contact Discharge: >8 kV Applications The FPF1320/21 is a Dual- Input Single-Output ( DISO) load sw itch consisting of tw o sets of slew -rate controlled, low on-resistance, P-channel MOSFET sw itches and integrated analog features. The slew -ratecontrolled turn-on character istic prevents inrush current and the resulting excessive voltage droop on the pow er rails. The input voltage range operates from 1.5 V to 5.5 V to align w ith the requirements of low -voltage portable device pow er rails. FPF1320/21 perfor ms seamless pow er-source transitions betw een tw o input pow er rails using the SEL pin w ith advanced breakbefore-make operation. FPF1320/21 has a TRCB function to bloc k unw anted reverse current from output to input during ON/OFF states. The sw itch is controlled by logic inputs of the SEL and EN pins, w hich are capable of interfacing directly w ith low -voltage control signals (GPIO). FPF1321 has 65 on-chip load resistor for output quick discharge w hen EN is LOW. FPF1320/21 is available in 1.0 mm x 1.5 mm WLCSP, 6-bump, w ith 0.5 mm pitch. FPF1321B is available in 1.0 mm x 1.5 mm WLCSP, 6-bump, 0.5 mm pitch w ith backside laminate. Smart phones / Tablet PCs Portable Devices Near Field Communication (NFC) Capable SIM Card Pow er Supply Ordering Information Switch Per Reverse Output Rise Part Number Top Channel Channel (Typ.) Current Mark Discharge Time (tR) at 3.3 VIN Blocking FPF1320UCX QS DISO 50 m Yes NA 130 s FPF1321UCX QT DISO 50 m Yes 65 130 s FPF1321BUCX QT DISO (c) 2011 Semiconductor Components Industries,LLC. October-2017,Rev 2 50 m Yes 65 130 s Package 1.0 mm X 1.5 mm Wafer-Level ChipScale Package (WLCSP) 6-Bumps, 0.5 mm Pitch 1.0 mm X 1.5 mm Wafer-Level ChipScale Package (WLCSP) 6-Bumps, 0.5 mm Pitch w ith Backside Laminate Publication Order Number: FPF1321/D FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch FPF1320 / FPF1321 VINA VIN_A VOUT CIN1 COUT FPF1320/21 VIN_B VINB CIN2 GND SEL Figure 1. EN Typical Application Block Diagram TRCB VOUT VINA Output Discharge (Optinal) FPF1320/21 Turn-On Slew Rate Controlled Driver TRCB VINB Turn-On Slew Rate Controlled Driver SEL CONTROL LOGIC GND EN Figure 2. Functional Block Diagram (Output Discharge Path for FPF1321 Only) www.onsemi.com 2 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Application Diagram Figure 3. Pin Configuration in Package View w ith Pin 1 Indicator EN VIN A VIN A EN A1 A2 A2 A1 SEL VOUT VOUT SEL B1 B2 B2 B1 GND VIN B C1 C2 VIN B C2 Top View GND C1 Bottom View Figure 4. Pin Assignm ents Pin Description Pin # Name A1 EN Enable input. Active HIGH. There is an internal pull-dow n resistor at the EN pin. B1 SEL Input pow er selection inputs. See Table 1. There are internal pull-dow n resistors at the SEL pins. A2 V INA Supply Input. Input to the pow er sw itch A. B2 V OUT Sw itch output C1 GND Ground C2 V INB Supply Input. Input to pow er sw itch B. Table 1. Description Truth Table SEL EN Switch A Switch B VOUT Status LOW HIGH ON OFF V INA V INA Selected HIGH HIGH OFF ON V INB V INB Selected X LOW OFF OFF Floating for FPF1320 GND for FPF1321 Both Sw itches are OFF www.onsemi.com 3 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Pin Configuration Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Min. Max. Unit -0.3 6 V V IN V INA, V INB, V SEL, V EN, V OUT to GND ISW Maximum Continuous Sw itch Current per Channel 1.5 A PD Total Pow er Dissipation at TA=25C 1.2 W 150 C TSTG Operating and Storage Junction Temperature -65 (1) JA ESD 85 Thermal Resistance, Junction-to-Ambient 2 (1 in. Pad of 2-oz. Copper) Electrostatic Discharge Capability (2) C/W 110 Human Body Model, JESD22-A114 6.0 Charged Device Model, JESD22-C101 1.5 Air Discharge (V INA , V INB to GND), IEC61000-4-2 System Level 15.0 Contact Discharge (V INA , V INB to GND), IEC61000-4-2 System Level 8.0 kV Notes: 1. Measured using 2S2P JEDEC std. PCB. 2. Measured using 2S2P JEDEC PCB cold-plate method. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet spec ifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Min. Max. Unit V IN Input Voltage on V INA, V INB Parameters 1.5 5.5 V TA Ambient Operating Temperature -40 85 C www.onsemi.com 4 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Absolute Maximum Ratings V INA=V INB=1.5 to 5.5 V, TA=-40 to 85C unless otherw ise noted. Typical values are at V INA=V INB=3.3 V and TA=25C. Symbol Parameters Condition Min. Typ. Max. Unit 1.5 5.5 V 5 A A Basic Operation V INA, V INB Input Voltage ISD Shutdow n Current SEL=HIGH or LOW, EN=GND, V OUT=GND, V INA=V INB=5.5 V IQ Quiescent Current IOUT=0mA, SEL=HIGH or LOW, EN=HIGH, V INA=V INB=5.5 V 12 22 V INA=V INB=5.5 V, IOUT=200 mA, TA=25C 42 60 V INA=V INB=3.3 V, IOUT=200 mA, TA=25C 50 V INA=V INB=1.8 V, IOUT=200 mA, TA=25C to 85C 80 RON On-Resistance m V INA=V INB=1.5 V, IOUT=200 mA, TA=25C V IH V IL V DROOP_OUT ISEL/IEN 170 SEL, EN Input Logic High Voltage V INA, V INB=1.5 V - 5.5 V SEL, EN Input Logic Low Voltage V INA , V INB=1.8 V - 5.5 V 0.65 SEL, EN Input Logic Low Voltage V INA , V INB=1.5 V - 1.8 V 0.60 1.15 V Output Voltage Droop w hile Channel Sw itching from V INA=3.3 V, V INB=5 V, Sw itching from Higher Input Voltage Low er V INA V INB, RL=150 , COUT=1 F (3) Input Voltage 100 mV Input Leakage at SEL and EN Pin 1.2 A RSEL_PD/REN_PD Pull-Dow n Resistance at SEL or EN Pin RPD V Output Pull-Dow n Resistance 7 M SEL=HIGH or LOW, EN=GND, IFORCE=20 mA, TA=25C, FPF1321 65 True Reverse Current Blocking V T_RCB RCB Protection Trip Point V OUT - V INA or V INB 45 mV V R_RCB RCB Protection Release Trip Point V INA or V INB -V OUT 25 mV IRCB V INA or V INB Current During RCB V OUT=5.5 V, V INA or V INB=Short to GND 9 tRCB_ON RCB Response Time w hen (3) Device is ON V INA or V INB=5 V, V OUTV INA,B=100 mV 5 15 A s Continued on the following page... www.onsemi.com 5 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Electrical Characteristics V INA=V INB=1.5 to 5.5 V, TA=-40 to 85C unless otherw ise noted. Typical values are at V INA=V INB=3.3 V and TA=25C. Symbol Parameters Condition Min. Typ. Max. Unit Dynam ic Characteristics (4) tDON Turn-On Delay tR V OUT Rise Time tON tDOFF (4) (6) Turn-On Time Turn-Off Delay tF V OUT Fall Time Turn-Off Time tDOFF tF tOFF tTRANR tSLH tTRANF tSHL (7) Turn-Off Delay 120 s 130 s 250 s V INA or V INB=3.3 V, RL=150 , CL=1 F, TA=25C, SEL: HIGH, EN: HIGH LOW 15 s 320 s 335 s 6 s 110 s 116 s 3 s 1 s 45 s 5 s (4) (4) tOFF V INA or V INB=3.3 V, RL=150 , CL=1 F, TA=25C, SEL: HIGH, EN: LOW HIGH (4,5) V INA or V INB =3.3 V, RL=150 , CL=1 F, TA=25C, SEL: HIGH, EN: HIGH LOW, Output Discharge Mode, FPF1321 (4,5) V OUT Fall Time (5,7) Turn-Off Time Transition Time (4) LOW HIGH Sw itch-Over Rising Delay (4) Transition Time (4) HIGH LOW Sw itch-Over Falling Delay (4) V INA=3.3 V, V INB=5 V, Sw itching from V INA V INB, SEL: LOW HIGH, EN: HIGH, RL=150 , CL=1 F, TA=25C V INA=3.3 V, V INB=5 V, Sw itching from VINB V INA, SEL: HIGH LOW, EN: HIGH, RL=150 , C=1 F, TA=25C Notes: 3. This parameter is guaranteed by design and characterization; not production tested. 4. tDON/tDOFF/tR/tF/tTRANR/tTRANF/tSLH/tSHL are defined in Figure 5. 5. FPF1321 output discharge is enabled during off. 6. tON=tR + tDON. 7. tOFF=tF + tDOFF. www.onsemi.com 6 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Electrical Characteristics (Continued) 5V VINA 3.3V VINB HI 50% 50% SEL LO LO HI 50% EN 50% LO tR tDON 90% tSHL tTRANF 5V 5V VOUT 90% 3.3V tDOFF 90% tF 90% 10% 10% GND Shutdown LO tSLH tTRANR 10% VDROOP Turn-on and VINA Figure 5. Switching from VINA to VINB Output discharge of FPF1321 Switching from VINB to VINA Dynam ic Behavior Tim ing Diagram www.onsemi.com 7 Shutdown GND FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Timing Diagram Figure 6. Figure 8. Supply Current vs. Tem perature Shutdow n Current vs. Tem perature Figure 7. Figure 9. Figure 10. RON vs. Tem perature Supply Current vs. Supply Voltage Shutdow n Current vs. Supply Voltage Figure 11. RON vs. Supply Voltage Continued on the following page... www.onsemi.com 8 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Typical Characteristics Figure 12. V IL vs. Tem perature Figure 13. V IL vs. Supply Voltage Figure 14. V IH vs. Tem perature Figure 15. V IH vs. Supply Voltage Figure 16. V IH / V IL vs. Supply Voltage Figure 17. RSEL_PD and REN_PD vs. Tem perature Continued on the following page... www.onsemi.com 9 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Typical Characteristics Figure 18. RSEL_PD and REN_PD vs. Supply Voltage Figure 19. t DON and t DOFF vs. Tem perature Figure 20. t R and t F w ith FPF1320 vs. Tem perature Figure 21. t R and t F w ith FPF1321 vs. Tem perature Figure 22. Transition Tim e vs. Tem perature Figure 23. Sw itch Over Tim e vs. Tem perature Continued on the following page... www.onsemi.com 10 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Typical Characteristics Figure 24. TRCB Trip and Release vs. Tem perature Figure 25. IRCB vs. Tem perature Figure 26. RPD w ith FPF1321 vs. Tem perature Figure 28. Turn-Off Response w ith FPF1320 (V INA=3.3 V, CIN=1 F, COUT=1 F, RL=150 , SEL=LOW) Figure 27. Turn-On Response (V INA=3.3 V, CIN=1 F, COUT=1 F, RL=150 , SEL=LOW) Figure 29. Turn-Off Response w ith FPF1321 (V INA=3.3 V, CIN=1 F, COUT=1 F, RL=150 , SEL=LOW) Continued on the following page... www.onsemi.com 11 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Typical Characteristics Figure 30. Pow er Source Transition from 3.3 V to 5 V Figure 31. Pow er Source Transition from 5 V to 3.3 V (V INA=3.3 V, V INB=5 V, CIN=1 F, COUT=1 F, (V INA=3.3 V, V INB=5 V, CIN=1 F, COUT=1 F, RL=150 ) RL=150 ) Figure 32. TRCB During Off (V INA=V INB=Floating, V OUT=5V, CIN=1 F, COUT=1 F, EN=LOW, No RL) Figure 33. TRCB During On (V INA=5 V, V OUT=6 V, CIN=1 F, COUT=1 F, EN=HIGH, No RL) www.onsemi.com 12 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Typical Characteristics The FPF1320 and FPF1321 are dual- input single-output pow er multiplexer sw itches w ith controlled turn-on and seamless pow er source transition. The core is a 50 m P-channel MOSFET and contr oller capable of functioning over a w ide input operating range of 1.5 V to 5.5 V per channel. The EN and SEL pins are activeHIGH, GPIO/CMOS-compatible input. They control the state of the sw itch and input pow er source selection, respectively. TRCB functionality blocks unw anted reverse current during both ON and OFF states w hen higher V OUT than V INA or V INB is applied. FPF1321 has a 65 output discharge path during off. Input Capacitor To limit the voltage drop on the input supply caused by transient inrush current w hen the sw itch turns on into a discharged load capac itor; a capacitor must be placed betw een the V INA or V INB pins to the GND pin. At least 1 F ceramic capacitor, CIN, placed c lose to the pins, is usually sufficient. Higher-value CIN can be used to reduce more the voltage drop. Power Source Selection Input pow er source selection can be controlled by the SEL pin. When SEL is LOW, output is pow ered from V INA w hile SEL is HIGH, V INB is pow ering output. The SEL signal is ignored during device OFF. Output Voltage Drop during Transition Output voltage drop usually occurs during input pow er source transition per iod from low voltage to high voltage. The drop is highly dependent on output capacitance and load current. FPF1320/1 adopts an advanced break-before-make control, w hich can result in minimized output voltage drop during the transition time. Output Capacitor Capacitor COUT of at least 1 F is highly recommended betw een the V OUT and GND pins to achieve minimized output voltage drop during input pow er source transition. This capacitor also prevents parasitic board inductance. Inrush Current True Reverse-Current Blocking Inrush current occurs w hen the dev ice is turned on. Inrush current is dependent on output capac itance and slew rate control capability, as expressed by: The true reverse-current blocking feature protects the input source against current flow from output to input regardless of w hether the load sw itch is on or off. I INRUSH = COUT x VIN - VINITIAL + I LOAD tR Board Layout (1) w here: COUT: Output capacitance; tR: Slew rate or rise time at V OUT; V IN: Input voltage, V INA or V INB; For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effect that parasitic trace inductance on nor mal and short-circuit operation. Wide traces or large copper planes for pow er pins (V INA, V INB, V OUT and GND) minimize the parasitic electrical effects and the thermal impedance. V INITIAL: Initial voltage at COUT, usually GND; and ILOAD: Load current. Higher inrush current causes higher input voltage drop, depending on the distributed input resistance and input capacitance. High inrush current can cause problems. FPF1320/1 has a 130 s of slew rate capability under 3.3 V IN at 1 F of COUT and 150 of RL so inrush current and input voltage drop can be minimized. www.onsemi.com 13 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Operation and Application Description 0.03 C E 2X F A (O0.250) Cu Pad (O0.350) SOLDER MASK OPENING B A1 (1.00) BALL A1 INDEX AREA D (0.50) 0.03 C 2X TOP VIEW RECOMMENDED LAND PATTERN (NSMD PAD TYPE) 0.06 C 0.625 0.539 0.05 C C 0.3320.018 0.2500.025 E SEATING PLANE D SIDE VIEWS NOTES: A. NO JEDEC REGISTRATION APPLIES. 0.005 O0.315 +/- .025 6X 0.50 C 1.00 B A 0.50 (Y) 0.018 1 2 F (X) 0.018 BOTTOM VIEW C A B B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCE PER ASMEY14.5M, 1994. D. DATUM C IS DEFINED BY THE SPHERICAL CROWNS OF THE BALLS. E. PACKAGE NOMINAL HEIGHT IS 582 MICRONS 43 MICRONS (539-625 MICRONS). F. FOR DIMENSIONS D, E, X, AND Y SEE PRODUCT DATASHEET. G. DRAWING FILNAME: MKT-UC006AFrev2. Figure 34. 6-Ball, 1.0 x 1.5 m m , Wafer-Level Chip-Scale Package (WLCSP) Product-Specific Dimensions Product D E X Y FPF1320UCX 1460 m 30 m 960 m 30 m 230 m 230 m FPF1321UCX 1460 m 30 m 960 m 30 m 230 m 230 m FPF1321BUCX 1460 m 30 m 960 m 30 m 230 m 230 m Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 14 FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch Physical Dimensions PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax : 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. Amer ican Technical Support: 800-282-9855 Toll Free USA/Canada. Eur ope, Middle East and Afr ica Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 15 ON Semiconductor Website: www.onsemi.com Or der Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative FPF1320 / FPF1321 -- IntelliMAXTM Dual-Input Single-Output Advanced Power Switch ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.