\ SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS T0-98 PACKAGE Device 2N4256 2N4424 2N4425 2N5172 2N5174 2N5232 2N5232A 2N5249 2N5249A 2N5305 2N5306 2N5307 2N5308 2N5309 2N5310 2N5311 2N5354 2N5355 2N5356 2N5365 2N5366 2N5418 2N5419 2N5420 2N6076 Di6G6 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 D33D21 D33D22 033024 033025 D33D 26 D33D29 D33D30 bmn ; : BVcEO @10mA (Vv) 40 40 40 25 75 50 50 50 50 25 40 50 50 50 Nee Vce(sat) Min.-Max. @ Ic, Voge (V) |(V) Max. @ lo, Ip Toe ee 7 : 0.125 | 10mA, 1.0mA aa | 0.3 5OmA, 3mA as 0.3 50mA, 3mA | 0.25 | 10mA, 1mA : 0.95 10mA, 1.0mMA a 0.125 | 10mA, 1mA a 0.125 | 10mA, 1mA ; : 0.125 | 10mA, 1mA : : 0.125 | 10mA, 1mA . a i 1.4 }200mA, 0.2mA | 1.4 200mA, 0.2mA | 1.4 200mA, 0.2mA 1.4 200mA, 0.2mA : 0.125 | 10mA, 1mA i 0.125 10mA, 1mA IC 0.125 | 10mA, 1mA : 20 0.25 5OmA, 2.5mA : : 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA ] 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA | 0.25 50mA, 2.5mA : 0 0.25 10mA, 1.0mA : a 0.6 10mA, 1.0mA 0.75 |500mA, 50mA 0.75 |500mA, 50mA | 0.75 |500mA, 50mA C 0.75 |S00mA, 50mA | Bi : ' 0.75 |500mA, 50mA ' . 500mA, 50mA 0.75 |500mA, 50mA : ; 0.75 |500mA, 50mA i ) 0.75 |500mA, 50mA : 0.75 500mA, 50mA |] 0.75 |500mA, 50mA : 21 0.75 500mA, 50mA | : 0.75 |500mA, 50mA : - 0.75 |500mA, 50mA . 102 fr Cp @10V Typical (MHz) Py @ 25C (mW) 1 MHz Typical (Pf) gqaagqd NNN BeaBAEB NNNNN VN aad Oprah\y DEVICE NPN 2N5418 2N5419 D33D21 D33D22 D33D24 D33D25 D33D26 D33D29 D33D30 PNP 2N5354 2N5355 2N6076 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-98 PACKAGE Min.-Max. 40-120 100-300 40-120 100-300 100-500 60-200 150-500 60-120 100-200 150-300 60-120 100-200 60-200 150-500 60-120 100-200 150-300 60-120 100-200 ENCAPSULATED TO-98 hee VcE(SAT) @ lo, Vee (v) (Vv) Max. @ le, Ig 50mA, 1 50mA, 1 50mA, 1 50mA, 1 10mA, 10 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 2mA, 2 ENCAPSULATED TO-92 106 COMPLEMENT 2N5418 2N5419 2N5354 2N5355 2N5172 D33D21 D33D22 033D24 D33D 25 033026 D33D29 D33030 D291 D29E2 D29E4 D29E5 D29E6 D29E9 D29E 10Silicon Transistors =) 2N9394,5,6 This series of economy transistors are PNP, silicon, planar, epitaxial, passivated devices. These units feature low collector saturation voltage, good current gain linearity over a wide collector current range, high gain-bandwidth product, and low noise. These characteristics make these units excellent for use in general purpose consumer and industrial amplifier and switching applications. absolute maximum rati ngs: (25C) (unless otherwise specified) Zz Voltages Collector to Emitter Veceo -25 Volts Emitter to Base Vego - 4 Volts Collector to Base Vcso -25 Volts Cureent Supwmsmeeet IT ey Collector (Continuous) Ic 350 mA mt hse ss Collector (Pulsed, 10 usec pulse width, ALL DIMEN. IW INCHES AND ARE $00, SEATING = 2% Duty Cycle) le 700 mA MEFERENCE UNLESS TOLERANCED /) TI!) sive Dissipation scen0s oe Total Power (Free Air at 25C)* Py 360 mW wore, (wee) ae Total Power (Free Air at 55C)* Py 260 mW at Temperature Storage Tstg -65to +150 C Operating T; +125 C Lead temperature, 1/16 + 1/32 from case for ten seconds maximum TL +260 C * Derate 3.6 mW/C increase in ambient temperature above 25C. electrical characte ristics: (25C) (unless otherwise specified) Static Characteristics Min. Typ. Max. Collector Cutoff Current (Veg =-25V) IcBo -100 nA (Veg= -25V, Ta =100C) lego - 10 BA (Vcop=25V) Ices -100 nA Emitter Cutoff Current (Veg =-4V) leBo - 10 LA Forward Current Transfer Ratio (Vc_e=-10V, I=-2 mA) 2N5354 hee 32 (Vee =1V, 1=-50 mA} 2N5354 hee 40 120 (Vee = -5V, [-= -300 mA) 2N5354 hre 20 (Voce =10V, I-=-2 mA) 2N5355 hee 80 (Vee=-1V, I-=-50 mA) 2N5355 hee 100 300 (Veg =-5V, Ic=-300 mA) 2N5355 hee 40 (Vce=10V, Ie=-2 mA) 2N5356 hee 200 (Vce=1V, 1-=-50 mA) 2N5356 hee 250 500 (Vee =-5V, I= -300 mA) 2N5356 hee 75 Collector Emitter Breakdown Voltage (I=-10 mA) Vaaz) cEO - 25 Volts Collector Saturation Voltage (Ic=-50 mA, [g+2.5 mA) VeE(sat) -.250 Volts (i=-300 mA, Ig=-30 mA) Vee (sat) -1.0 Volts 490Base Saturation Voltage (I=-50 mA, Ig=2.5 mA) VBElsat) (Ic=-300 mA, Ig=-30 mA) Vpe(sat) Base Emitter Voltage (V ce =-10V, Ip=-2 mA) Vee Dynamic Characteristics Forward Current Transfer Ratio (Vce=10V, Ip=-2 mA, f=1 kHz) 2N5354 hte (Vcg=10V, I-=2 mA, f=1 kHz) 2N5355 hye (Vce=-10V, I-=-2 mA, f=1 kHz) 2N5356 he Output Capacitance, Common Base (Veg =10V, [-=0, f=1 MHz) Cop Input Capacitance, Common Base (Veg=-0.5V, I,=0, f= 1 MHz) Cep Gain Bandwidth Product (Vce=-10V, I1-=-2 mA) fr Min. Typ. 32 80 200 250 Max. -1.1 -2.0 180 450 750 35 TYPICAL CONTOURS OF GAIN BANDWIDTH PRODUCT, (f;) VS. COLLECTOR CURRENT 2N5354 y o a - 4 Vog COLLECTOR EMITTER VOLTAGE - VOLTS o 3 Ve_e-COLLECTOR EMITTER VOLTAGE - VOLTS ix) 2 A Lo to (00 Ie COLLECTOR CURRENT - mA 2N5356 * Vee-COLLECTOR EMITTER VOLTAGE - VOLTS > Lo Ie COLLECTOR CURRENTmA 491 2N5355 Nog" 5 VOLTS heg NORMALIZED TO SOmA, 25C VALUE 4.0 lo ',- COLLECTOR CURRENT-mA TYPICAL NORMALIZED Hre VS. TEMPERATURE 2N5354, 5355, 5356 Volts Volts Volts pF pF MHz2N5354, 5, 6 TYPICAL SMALL SIGNAL CHARACTERISTICS vs. EMITTER CURRENT 2N5354, 5355, 5356 Veg #10 Tae 25C fa tkHe 1 kHz HYBRID PARAMETERS NORMALIZED TO 2mA VALUE T_e-EMITTER CURRENT ~ mA TYPICAL TYPICAL SMALL SIGNAL CHARACTERISTICS COLLECTOR CUTOFF CURRENT Vs. (lebo) VS. TEMPERATURE 1kHz HYBRID PARAMETERS NORMALIZED TO IOV VALUE = o es o a 2 x oo eva COLLECTOR VOLTAGE 2N5354, 5355, 5356 2N5354, 5355, 5356 Tego - COLLECTOR BASE REVERSE CURRENT - NANOAMPERS OL 192253 4 8 8 20 30 40 80 +3 2 Es 75 00 "8 0 Vog COLLECTOR- EMITTER VOLTAGE - VOLTS Ta ~ AMBIENT TEMPERATURE ~ C TYPICAL SMALL SIGNAL CHARACTERISTICS f = 1 kHz, Voz = 10V, Iz = 2 mA Symbol Characteristic 2N5354 | 2N5355 | 2N5356 Units hie Input Resistance 1300 2000 8700 ohms hoe Output Conductance 24 37 100 umhos hee Forward current transfer ratio 100 150 450 h.. Reverse voltage feedback ratio 1.5 2.0 4.0 | x 10-4 492TYPICAL BASE SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N5354, 5355, 5356 \ \ N \ \- \ \ A Hy \ \ \ \ \ NX NX {\ 18 o 1} O00 Ig -COLLECTOR CURRENT- ma TYPICAL OUTPUT CAPACITANCE AND INPUT CAPACITANCE VS. REVERSE BIAS VOLTAGE 2N5354, 5355, 5356 24 Ceb AND Ceh- OUTPUT AND INPUT CAPACITANCE - pF 10 10 Veg OR Vpg- REVERSE BIAS VOLTAGE -VOLTS 493TYPICAL TRANSFER CHARACTERISTICS 2N5354 2 o Vpe - BASE EMITTER VOLTAGE - VOLTS s s O4 Ig -COLLECTOR CURRENT- ma 2N5355 or Voge - GASE EMITTER VOLTAGE - VOLTS Tg - COLLECTOR CURRENT- mA 2N5356 oO wt os Li v2 Mog 8 LT a 08 Lt | / ree | e PN \ \ et 8 \ \ \ \ \LA\ \ \ AN N WO ELL an) Lo 0 wo foco Te COLLECTOR CURRENT-mA 494 TYPICAL FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 2N5354 HFE VS Iq Yoe 8 VOLTS pg - FORWARD CURRENT TRANSFER RATIO Ig -COLLECTOR CURRENT- ma. 2N5355 VS le Vog* SCATS Tae FORWARD CURRENT TRANSFER RATIO bre - oO on 0 10 tooo Tg - COLLECTOR CURRENT - mA 2N5356 hee FORWAP CURRENT TRANSFER RATIO Tg - COLLECTOR CURRENT-maTYPICAL COLLECTOR SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N5354 Veg (SAT) - COLLECTOR EMITTER SATURATION VOLTAGE ~VOLTS Tg-COLLECTOR CURRENT -mA 2N5355 4 u gg (SAT)-COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS z Bs 3 8 2 2 ig - COLLECTOR CURRENT - ma 2N5356 Nog (SAT! COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS be COLLECTOR CURRENT - mA 495 2N5354, 5, 6f COLLECTOR CURRENT -ma Ig COLLECTOR CURRENT - mA, tg COLLECTOR CURRENT-ma Neg COLLECTOR VOLTAGE - mitivoite Veg + COLLECTOR VOLTAGE - miltivotts TYPICAL COLLECTOR CHARACTERISTICS 2N5354 i 2N5355 Vee -COLLECTOR. VOLTAGE - VOLTS 2N5356 4962N5354 SOURCE RESISTANCE IN k OHMS S Or O0l Ol ( 1.0 10 100 I, COLLECTOR CURRENT mA 2N5355 SOURCE RESISTANCE IN k OHMS .00t al 0.1 1.0 10 100 I, COLLECTOR CURRENT mA 2N5356 SOURCE RESISTANCE IN k OHMS 00! Ot oO. 10 10 (00 Ig COLLECTOR CURRENT mA 497