
2017/11/15
Micro Commercial Components
M C C
R
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
www.mccsemi.com
2 of 5
1. The value of RθJA is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
2. The power dissipation PD is based on TJ(MAX)=175°C, using junction‐to‐
case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
3. Single pulse width limited by junction temperature TJ(MAX)=175°C.
4. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
6. These curves are based on the junction‐to‐case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
7. The maximum current rating is package limited.
Note:
Revision: A
Symbol Min Typ Max Units
BVDSS 60 V
1
TJ=55°C 5
IGSS ±100 nA
VGS(th) 1.1 1.7 2.5 V
6.8 8.2
9.5 12.0
gFS 300S
VSD 0.85 0.99 V
IS53 A
Ciss 1988 pF
Coss 470 pF
Crss 14 pF
Rg1.6
Qg(10V) 31 nC
Qg(4.5V) 16 nC
Qgs 6 nC
Qgd 5nC
tD(on) 10.5 ns
tr4.5 ns
tD(off) 29.5 ns
tf8ns
trr 17 ns
Qrr 58 nC
Body Diode Reverse Recovery Time IF=20A,di/dt=500A/µs
Body Diode Reverse Recovery charge
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-on Delay Time
VGS=10V, VDS=15V, RL=2.5Ω,
RGEN=3Ω
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge VGS=10V, VDS=30V, ID=20A
VGS=10V, ID=20A
IS=20A,V
GS=0V
Gate resistance VGS=0V, VDS=0V, f=1MHz
VDS=5V, ID=20A
Static Drain-Source On-Resistance
Diode Forward Voltage
Diode Forward Voltage
STATIC PARAMETERS
Parameter Conditions
IDSS A
Drain-Source Breakdown Voltage ID=250A, VGS=0V
VDS=VGS, ID=250A
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
Reverse Transfer Capacitance
VGS=0V, VDS=30V, f=1MHz
Zero Gate Voltage Drain Current
Gate-Body leakage current
Maximum Body-Diode Continuous Current G
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON)
Gate Threshold Voltage
m
VGS=4.5V, ID=20A
65
m
IF=20A,di/dt=500A/µs