10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
Excellent Transmit LO/Output Buffer Stage
Compact Size
18.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
5.5 dB Noise Figure
Variable Gain with Adjustable Bias
100% On-Wafer RF, DC and Output Power Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
Features Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+4.3 VDC
180 mA
0V
+20.0 dBm
-65 to +165 ºC
-55 to +85 ºC
175 ºC
Page 1 of 5
Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
10.0
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
15.0
17.0
18.0
+/-2.0
35.0
5.5
+20.0
+22.0
+4.0
-0.23
100
Max.
21.0
-
-
-
-
-
-
-
-
+4.0
-0.1
130
(2) Measured using constant current.
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
B1008-BD
Mimix Broadband’s two stage 10.0-21.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +20.0 dBm P1dB output compression point.
The device also provides variable gain regulation with
adjustable bias. This MMIC uses Mimix Broadband’s
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
General Description
November 2010 - Rev 11-Nov-10
Buffer Amplifier Measurements
Page 2 of 5
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
B1008-BD
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
Gain (dB)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
Reverse Isolation (dB)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
-25
-20
-15
-10
-5
0
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
Input Return Loss (dB)
+95 Dec C -30 Deg C +25 Deg C
*Includes fixture losses
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
-30
-25
-20
-15
-10
-5
0
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
Output Return Loss (dB)
+95 Deg C -30 Deg C +25 Deg C
*Includes fixture losses
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
Pin=+10 dBm
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0
Frequency (GHz)
Saturated Output Power (dBm)
+95 deg C -30 deg C +25 deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
November 2010 - Rev 11-Nov-10
XB1008-BD Vd=4V, Id=130mA, Vg1=Open
5
6
7
8
e
0
1
2
3
4
Noise Figure (dB)
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
RF In RF Out
1
2 3
4
5
Vg1 Vd
Vg2
1.100
(0.043)
1
23
4
0.355
(0.014)
0.955
(0.038)
1.100
(0.043)
0.0
0.0
0.310
(0.012)
0.310
(0.012)
0.560
(0.022)
5
Page 3 of 5
Mechanical Drawing
Bias Arrangement
Bypass Capacitors - See App Note [2]
(Note: Engineering designator is 15MPA0857)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.75 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vd)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg2)
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
B1008-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
November 2010 - Rev 11-Nov-10
Page 4 of 5
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended
to bias this device at Vd=4V with Id=90 mA (Vg2 at approximately -0.5V and Vg1 left open). It is also recommended to use active biasing to control
the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also,
make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd and Vg1,2) needs to
have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
B1008-BD
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
XB1008-BD: MTTF hours vs. Backside Temperature
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
1.0E+14
1.0E+15
1.0E+16
20 30 40 50 60 70 80 90 100 110 120
Backside Temp (ºC)
MTTF (hours)
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
XB1008-BD: Tch (max) vs. Backside Temperature
60
80
100
120
140
160
180
200
220
20 30 40 50 60 70 80 90 100 110 120
Backside Temp (ºC)
Tch_max (ºC)
Vdd = 4 V, Idd = 100 mA
Vdd = 4 V, Idd = 130 mA
November 2010 - Rev 11-Nov-10
Page 5 of 5
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any
on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless
gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC
(Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Part Number for Ordering Description
XB1008-BD-000V Where “V” is RoHS compliant die packed in vacuum release gel paks
XB1008-BD-EV1 XB1008 die evaluation module
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
B1008-BD
Ordering Information
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
November 2010 - Rev 11-Nov-10
