MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N-Channel www.onsemi.com Features 2 SOURCE * Drain and Source are Interchangeable * S Prefix for Automotive and Other Applications Requiring Unique * 3 GATE Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit 225 1.8 mW mW/C RqJA 556 C/W TJ, Tstg -55 to +150 C Gate Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature SOT-23 (TO-236) CASE 318 STYLE 10 MARKING DIAGRAM PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6x M G G 1 6x M G = Device Code x = U for MMBFJ309L, SMMBFJ309L x = T for MMBFJ310L, SMMBFJ310L = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBFJ309LT1G, SMMBFJ309LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBFJ310LT1G, SMMBFJ310LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBFJ310LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 October, 2016 - Rev. 8 1 Publication Order Number: MMBFJ309LT1/D MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS -25 - - Vdc IGSS - - - - -1.0 -1.0 nAdc mAdc MMBFJ309 MMBFJ310, SMMBFJ310 VGS(off) -1.0 -2.0 - - -4.0 -6.5 Vdc MMBFJ309 MMBFJ310, SMMBFJ310 IDSS 12 24 - - 30 60 mAdc VGS(f) - - 1.0 Vdc Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 8.0 - 18 mmhos Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| - - 250 mmhos Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss - - 5.0 pF Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss - - 2.5 pF Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) en - 10 - nV Hz OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc) Gate Reverse Current (VGS = -15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL-SIGNAL CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = -55C 50 50 +25C IDSS +25C 40 40 30 30 +150C 20 20 +25C -55C 10 10 +150C -5.0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 10 1.0 k Yfs Yfs 10 k 100 1.0 k Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 120 RDS 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 100 0.01 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 9.0 ID, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate-Source Voltage www.onsemi.com 3 0 0 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE ( mhos) CAPACITANCE (pF) Yfs , FORWARD TRANSCONDUCTANCE (mhos) Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 24 |S12|, |S22| 3.0 0.060 1.00 2.4 0.79 0.39 S22 VDS = 10 V ID = 10 mA TA = 25C 0.048 0.98 S21 Y11 18 1.8 Y21 12 1.2 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 0.55 0.15 100 1000 Figure 4. Common-Gate Y Parameter Magnitude versus Frequency q21, q11 180 50 40 160 30 150 20 140 10 200 300 500 f, FREQUENCY (MHz) q11, q12 -20 120 q21, q22 -40 86 -40 100 85 -60 80 -120 84 -80 60 -100 40 -120 20 100 0 q11 -20 q21 700 1000 Figure 5. Common-Gate S Parameter Magnitude versus Frequency q12, q22 -20 87 q22 170 0.036 0.96 S11 Y22 6.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) 30 |S21|, |S11| 0.85 0.45 q21 q22 -20 -60 -80 -40 -100 q12 q11 130 0 100 -140 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) -60 q12 -160 83 -180 700 q21 -200 82 1000 Figure 6. Common-Gate Y Parameter Phase-Angle versus Frequency VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) q11 700 -80 -100 1000 Figure 7. S Parameter Phase-Angle versus Frequency www.onsemi.com 4 0.90 MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBFJ309LT1/D