PNP small signal transistor BC857B Dimensions (Unit : mm) Features 1) Ideal for switching and AF amplifier applications. 2) High current gain. 2.9 0.4 Packaging specifications (3) 1.3 2.4 Package Type 0.95 0.45 0.2Min. BC857B Taping Code T116 Basic ordering unit (pieces) 3000 (2) (1) 0.95 0.95 0.15 1.9 BC857B (1)Emitter (2)Base (3)Collector Each lead has same dimensions Abbreviated symbol : G3F Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current IC -0.1 A Collector power dissipation PC 0.20 W Junction temperature Storage temperature 0.35 W Tj 150 C Tstg -65 to 150 C Mounted on a 7x5x0.6 mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO -45 - - V IC= -1mA Collector-base breakdown voltage BVCBO -50 - - V IC= -50A Emitter-base breakdown voltage BVEBO -5 - - V IE= -50A Parameter Collector-base cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current transfer ratio Conditions ICBO - - -0.015 A VCB= -30V VCE(sat1) - - -0.3 V IC/IB= -10mA/ -0.5mA VCE(sat2) - - -0.65 V IC/IB= -100mA/ -5mA VBE(on) -0.6 - -0.75 V VCE= -5V, IC= -10mA hFE 210 - 480 - VCE= 5V, IC= -2mA VCE= -5V, IE= 20mA, f=100MHz fT - 250 - MHz Collector outpu capacitance Cob - - 4.5 pF VCB= -10V, f=1MHz Collector-base cutoff current ICBO - - -4 A VCB= -30V Transition frequency www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.11 - Rev.B BC857B Data Sheet Electrical characteristics curves -120 Ta=125C 75C 25C -55C -1 -100 -80 IB=-250uA -60 -0.2 -0.4 -0.6 -0.8 -1 IB=-200uA IB=-150uA -40 IB=-100uA IB=-50uA -20 -0.1 0 IB=0A 0 -1.2 0 BASE TO EMITTER VOLTAGE : VBE (V) -2 -8 -1 -10 100 10 -0.1 -100 -1 -10 -100 COLLECTOR CURRENT : IC (mA) IB=-5uA IB=0A 0 -0.4 1000 TRANSITION FREQUENCY : fT (MHz) IC/IB=20/1 Ta=125C 75C 25C -55C www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. -1.6 -2 Ta=25C IC/IB=50/1 20/1 10/1 -0.1 -0.01 -0.1 Ta=25C VCE= -12V 200 100 50 1 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 2/2 -1 -10 -100 Fig 6. Collector Saturation Voltage vs. Collector Current (I) COLLECTOR CURRENT : IC (mA) Fig 7. Collector Saturation Voltage vs. Collector Current (II) -1.2 COLLECTOR CURRENT : IC (mA) 500 0.5 -100 -0.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig 5. DC Current Gain vs. Collector Current (II) -1 -10 IB=-10uA Fig 3. Grounded Emitter Output Characteristics (II) Ta=125C 75C 25C -55C Fig 4. DC Current Gain vs. Collector Current (I) -1 IB=-15uA -1 COLLECTOR CURRENT : IC (mA) -0.01 -0.1 IB=-20uA -5 0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=-5V -3V -1V 10 -0.1 IB=-25uA -10 VCE=-5V DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE -6 IB=-35uA IB=-30uA Ta=25C 1000 Ta=25C 100 IB=-40uA -10 Fig 2. Grounded Emitter Output Characteristics (I) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -4 IB=-50uA IB=-45uA COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig 1. Grounded Emitter Propagation Characteristics -0.1 Ta=25C 100 20 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -10 -15 IB=-500uA -450uA -400uA -350uA -300uA COLLECTOR CURRENT : IC (mA) VCE=-5V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -100 Ta=25C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 2011.11 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A