1/2
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○
c 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.B
Each lead has same dimensions
(1)Emitter
(2)Base
(3)Collector
BC857B
0.45
0.95
0.15
0.2Min.
2.4
1.3
2.9
0.95
(1)
(3)
0.95
(2)
1.9
0.4
Abbreviated symbol : G3F
PNP small signal transistor
BC857B
Features Dimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications.
2) High current gain.
Packaging specifications
Package
Code Taping
Basic ordering unit (pieces)
BC857B
T116
3000
Type
Absolute maximum ratings (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
−50 V
V
V
A
°C
°C
−45
−5
−0.1
I
C
∗
0.20
0.35 W
W
150
−65 to 150
Symbol Limits Unit
Electrical characteristics (Ta=25C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector-base cutoff current
Collector outpu capacitance
Parameter Symbol
BVCEO
BVCBO
BVEBO
ICBO
VCE(sat1)
VCE(sat2)
hFE
fT
I
CBO
Min.
−45
−50
−5
−
−
−0.6
−
−
−
−
−
−
−
250
−
−
−
−
−
−0.015
−0.3
−0.75
210 −480
−
−4
VI
C= −1mA
IC= −50μA
IE= −50μA
VCB= −30V
IC/IB= −10mA/ −0.5mA
VCE= −5V, IC= −10mA
VCE= 5V, IC= −2mA
VCE= −5V, IE= 20mA, f=100MHz
VCB= −30V
V
V
μA
V
−
MHz
μA
Cob −−4.5 VCB= −10V, f=1MHzpF
Typ. Max. Unit Conditions
VBE(on)
−−−0.65 IC/IB= −100mA/ −5mAV
V
Transition frequency
2/2
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○
c 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.B
Data Sheet BC857B
Electrical characteristics curves
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
−0.5 −20
2
5
10
−1−2−5−10
20
Cib
Cob
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
Fig.8 Gain bandwidth product vs.
emitter current
50 1000.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
V
CE
= −12V
-0.1
-1
-10
-100
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
I : TNERRUC ROTCELLOC
C
)Am(
BASE TO EMITTER VOLTAGE : V
BE
(V)
V
CE
=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
0
-20
-40
-60
-80
-100
-120
0-2-4-6-8-10
I : TNERRUC ROTCELLOC
C
)
Am(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
I
B
=-50uA
I
B
=0A
I
B
=-100uA
I
B
=-150uA
I
B
=-200uA
I
B
=-250uA
I
B
=-500uA
-
450uA
-
400uA
-
350uA
-300uA
Ta=25ºC
Fig 1. Grounded Emitter Propagation
Characteristics
Fig 2. Grounded Emitter Output
Characteristics (I)
-0.01
-0.1
-1
-0.1 -1 -10 -100
: EGATLOV NOITAR
UTA
S
ROTCELLOC
V
)tas(EC
)V(
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=20/1
Ta=125ºC
75ºC
25ºC
-55ºC
Fig 7. Collector Saturation Voltage
vs. Collector Current (II)
10
100
1000
-0.1 -1 -10 -100
h : NIAG TNERRUC CD
EF
COLLECTOR CURRENT : I
C
(mA)
V
CE
=-5V
Ta=125ºC
75ºC
25ºC
-55ºC
-0.01
-0.1
-1
-0.1 -1 -10 -100
: EGATLOV NOITARUTAS ROTCELLOC
V
)tas(EC
)V(
COLLECTOR CURRENT : I
C
(mA)
Ta=25ºC
I
C
/I
B
=50/1
20/1
10/1
Fig 5. DC Current Gain vs.
Collector Current (II)
Fig 6. Collector Saturation Voltage
vs. Collector Current (I)
10
100
1000
-0.1 -1 -10 -100
h : NIAG TNERRUC CD
EF
COLLECTOR CURRENT : I
C
(mA)
Ta=25ºC
V
CE
=-5V
-
3V
-1V
Fig 4. DC Current Gain vs.
Collector Current (I)
0
-5
-10
-15
0 -0.4 -0.8 -1.2 -1.6 -2
I : TNERRUC ROTCELLOC
C
)Am(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
I
B
=-20uA
I
B
=0A
I
B
=-25uA
I
B
=-30uA
I
B
=-35uA
I
B
=-50uA
Ta=25ºC
I
B
=-45uA
I
B
=-40uA
I
B
=-15uA
I
B
=-10uA
I
B
=-5uA
Fig 3. Grounded Emitter Output
Characteristics (II)
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes
