MIL-PRF-19500/391P
26 June 2015
SUPERSEDING
MIL-PRF-19500/391N
20 May 2014
PERFORMANCE SPECIFICATION SHEET
* TRANSISTOR, NPN, SILICON, LOW-POWER, ENCAPSULATED
(THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED,
RADIATION HARDNESS ASSURANCE, DEVICE TYPES 2N3019, 2N3057A, AND 2N3700,
QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for the unencapsulated device types 2N3019 and 2N3700. Radiation hardne ss as suran ce
(RHA) level designators “M”, “D”, “P“, “L”, “R”, “F”, “G” and “H” are appended to the device prefix to identify devices,
which have passed RHA requirements.
* 1.2 Package outlines and die topography. The device packages for the encapsulated device types are as follows:
TO-5 in accordance with figure 1, TO-39 in accordance with figure 2, TO-18 in accordance with figure 3, and surface
mount versions UB in accordance with figure 4. The dim ens i ons and topography for JANHC and JANKC
unencapsulated die are as follows: A version die in ac cordance with figure 5, B version die in accordance with figure
6, and C version die in accordance with figure 7.
1.3 Maximum ratings. Unless otherwise spe cif ied, TA = +25°C.
IC
VCBO VEBO VCEO TJ and TSTG
A dc
1
V dc
140
V dc
7
V dc
80
°C
-65 to +200
AMSC N/A FSC 5961
INCH-POUND
Comments, suggestions, or questions on this do cu ment sh ou ld be addres sed to D LA Land and M ar itime , ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.dla.mil.
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 26 September 2015.
MIL-PRF-19500/391P
2
1.3 Maximum ratings. Unless otherwise spe cif ied, TA = +25°C. - Continued.
Types
PT
TA = +25°C
(1) (2)
PT
TC = +25°C
(1) (2)
PT
TSP(IS) = +25°C
(1) (2)
RθJA
(2) (3) (4) RθJC
(2) (3) RθJSP(IS)
(2) (3)
W
W
W
°C/W
°C/W
°C/W
2N3019
0.800
5
N/A
195
30
N/A
2N3019S
0.800
5
N/A
195
30
N/A
2N3057A
0.500
1.8
N/A
325
80
N/A
2N3700
0.500
1
N/A
325
150
N/A
2N3700UB
0.500
N/A
1.5
325
N/A
90
(1) For derating, see figures 8, 9, 10, 11, 12, and 13.
(2) See 3.3.
(3) For thermal curves, see figures 14, 15, 16, 17, 18, 19, and 20.
(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8 and
12 for the UB package and use RθJA.
1.4 Primary electrical chara ct erist ic s.
Limits
hFE1 hFE2 hFE3 (1) hFE4 (1)
CE
V
CE
= 10 V dc
IC = 0.1 mA dc
V
CE
= 10 V dc
IC = 10 mA dc
V
CE
= 10 V dc
IC = 500 mA dc
Min
50
90
50
Max
300
300
Types
Limit
hFE5 (1)
VCE = 10 V dc
IC = 1 A dc
|hfe|
f = 20 MHz
VCE = 10 V dc
IC = 50 mA dc
C
obo
100 kHz ≤ f ≤ 1 MHz
VCB = 10 V dc
IE = 0
2N3019, 2N3019S
2N3057A, 2N3700
2N3700UB
pF
Min
15
5
Max
20
12
Types
Limits
V
CE(sat)1
(1)
IC = 150 mA dc
IB = 15 mA dc
V
CE(sat)2
(1)
IC = 500 mA dc
IB = 50 mA dc
V
BE(sat)
(1)
IC = 150 mA dc
IB = 15 mA dc
2N3019, 2N3019S
2N3057A, 2N3700
2N3700UB
V dc
V dc
V dc
Min
Max
0.2
0.5
1.1
(1) Pulsed, see 4.5.1.
MIL-PRF-19500/391P
3
* 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.
See 6.5 for PIN construction example and 6.6 for a list of available PINs.
* 1.5.1 JAN brand and quality level designators.
1.5.1.1 Encapsulated devices. The quality level designators for encapsulated devices that are applicable for this
specification sheet from the lowest to the highest level are as follows: JANTX", “JANTXV” and "JANS".
* 1.5.1.2 Unencapsulated devices (die). See 6.7 for unencapsula ted dev ice s. "JANHC" and "JANKC".
* 1.5.2 Radiation hardness assurance (RHA) designator. The RHA levels app lic abl e for thi s specifi cat ion she et from
lowest to highest for JANS quality levels are as follows: "M", "D", "P", "L", "R", “F”, “G”, and “H”. The RHA levels
applicable for th is speci fic at io n sheet from lowest to highest for JANTXV quality levels are as follows: "R", “F”.
* 1.5.3 Dev ice ty pe. The designation system for the device types of transistors covered by this specification sheet
are as follows.
* 1.5.3.1 First number and first letter symbols. The transistors of this specification sheet use the first number and
letter symbols "2N".
* 1.5.3.2 Second number symbols. The second number symbols for the transistors covered by this specification
sheet are as follow s: 3019, 3019S, 3057A, 3700, AND 3700UB.
* 1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN in the order listed in the table as
applicable:
Blank suffix indicates dimension LL is 1.50 min, 1.75 max (2N3019 only)
S Indicates d ime nsi on LL is 0.50 0 (12.7 0 mm) min imu m, 0.75 0 (19.05 m m) maximum. (2N3019 only)
UB Indicates a surface mount (2N3700UB)
* 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500.
* 1.5.6 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The
manufact urer die ide ntifiers th at are app licable for this spec if icat ion she et ar e "A", "B", and “C”.
MIL-PRF-19500/391P
4
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is
uncontrol led in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. For "S" suffix devices, dimension LL is 0.500 (12.70 mm) minimum, 0.750 (19.05 mm) maximum.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions for device types 2N3019 (TO-5) and 2N3019S (TO-39).
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.70
19.05
7, 8, 12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
Q
.050
1.27
5
TL
.029
.045
0.74
1.14
4
TW
.028
.034
0.71
0.86
3
r
.010
0.25
10
α
45° TP
45° TP
6
P
.100
2.54
TO-39
TO-5
*
MIL-PRF-19500/391P
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Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.065
.085
1.65
2.16
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7
LL
.500
1.750
12.70
44.45
7
LU
.016
.019
0.41
0.48
7
L1
.050
1.27
7
L2
.250
6.35
7
TL
.028
.048
0.71
1.22
3
TW
.036
.046
0.91
1.17
2
r
.007
0.18
10, 11
α
45° TP
45° TP
6
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
6. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter
is uncontrolled in L1 and beyond LL minim um.
7. All three leads.
8. The collector shall be internally connected to the case.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 2. Physical dimensions for 2N3057A (TO-46).
MIL-PRF-19500/391P
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Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7,8
LL
.500
.750
12.70
19.05
7,8
LU
.016
.019
0.41
0.48
7,8
L1
.050
1.27
7,8
L2
.250
6.35
7,8
P
.100
2.54
Q
.030
0.76
5
TL
.028
.048
0.71
1.22
3,4
TW
.036
.046
0.91
1.17
3
r
.010
0.25
10
α
45° TP
45° TP
6
1, 2, 9, 11, 12
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a
minimum length of .011 inch (0. 28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD,
CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.3 7
+0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at
maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods
or by the gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 3. Physical dimensions for type 2N3700 (TO-18).
TO-18
MIL-PRF-19500/391P
7
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
BL
.115
.128
2.92
3.25
BW
.085
.108
2.16
2.74
CL
.128
3.25
CW
.108
2.74
LL1
.022
.038
0.56
0.96
LL2
.017
.035
0.43
0.89
LS1
.035
.040
0.89
1.02
LS2
.071
.079
1.81
2.01
LW
.016
.024
0.41
0.61
r
.008
.203
r1
.012
.305
r2
.022
.559
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical dimensio ns, surf a ce mount (2N3 700UB).
UB
MIL-PRF-19500/391P
8
Die size: .030 x .030 inch (0.762 x 0.762 mm).
Die thickness: .008 ±.0016 inch (0.2032 mm ±0.04064 mm).
Base pad: .004 x .010 inch (0.1016 mm x 0.254 mm).
Emitter pad: .0023 x .007 inch (0.05842 mm x 0.1778 mm).
Back metal: Gold, 6,500 ±1,950 Å.
Top metal: Aluminum, 12,000 Å minimum; 14,500 Å nominal.
Back side: Collector.
Glassivation: SiO2, 7,500 ±1,500 Å.
FIGURE 5. JANHCA and JANKCA die (2N3700 and 2N3019) dimensions.
MIL-PRF-19500/391P
9
1. Chip size.........................….024 x .026 inch ±.002 inch (0.610 X 0.660 ±0.051 millimeter).
2. Chip thickness................….010 inch ±.0015 inch (0.254 ±0.0381 millimeter).
3. Top metal........................…Aluminum 15,000Å minimum, 18,00 0Å nominal.
4. Back metal.........................Gold:3,500Å minimum, 5,000Å nominal.
5. Backside.........................…Collector.
6. Bonding pad...................….B = .004 inch x .006 inch (0.102 X 0.152 millimeter).
E = .004 inch x .0055 inch (0.102 X 0.140 millimeter).
FIGURE 6. JANHCB and JANKCB die (2N3700) dimensions.
MIL-PRF-19500/391P
10
1. Chip size .023 x .023 inch ±.002 inch (0.584 X 0.584 ±0.051 millimeter).
2. Chip thickness . 010 inc h ±.002 inch (0.254 ±0.508 milli meter).
3. Top metal Aluminum 16,000Å minimum, 20,000Å nominal.
4. Back metal Gold: 5,000Å ±500Å.
5. Backside Collector.
6. Bonding pad B = .004 inch x .010 inch (0.102 X 0.254 millimeter).
E = .0039 inch x .0039 inch (0. 992 X 0.099 millimeter).
FIGURE 7. JANHCC and JANKCC die (2N3700) dimen sion s .
MIL-PRF-19500/391P
11
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are spec ified in sect ions 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautio ned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Govern ment document s.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Copies of these documents are available online at http://quicksearch.dla.mil.)
2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIRE MENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbrevia tio ns, sy mbols, and definition s used herein shall be as
specified in MIL-PRF-19500 and as follows.
PCB ....................... Printed circuit board.
RθJA ........................ Thermal resi stan ce jun cti on to ambi ent.
RθJC ........................ Thermal resi stan ce jun cti on to cas e.
RθJSP(IS) ................... Thermal resistance junction to solder pads (infinite sink mount to PCB).
TSP(IS) ...................... Temperatur e of solder pad s (infini te sin k mount to PCB) .
UB .......................... Surface mount case outlines (see figure 4).
* 3.4 Interfa ce and phy si cal dim ensi ons . Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (2N3019, TO-5, 2N30 19S, TO-39), figure 2 (2N3057A, TO-46), figure 3 (2N3700,
TO-18), figure 4 (2N3700U B, s ur fac e mount) figure 5 (JANHCA, JANKCA), figure 6 (JANHCB, JANKCB), and
figure 7 (JANHCB, JANKCB) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
MIL-PRF-19500/391P
12
3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test
levels shall be as defined in MIL-PRF-19500.
3.6 Electr ica l perf or man ce ch aracteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on
the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.
The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix
can also be omitted. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or
replace) the device “2N” identifier (depending upon degree of abbreviation required).
* 3.9 Workmanship. Transistors shall be processed in such a manner as to be uniform in quality and shall be free
from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Clas sifi cat ion of insp ect io ns. The inspec tion requireme nts spe cif ied her ein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and table I, table II, and ta b le III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Gro up E qualifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the perf or man ce of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.2 JANHC and JANKC qualific ation. JANHC and JANKC qual ifi cati on insp ect ion sh all b e in accorda nce w ith
MIL-PRF-19500.
MIL-PRF-19500/391P
13
4.3 Screening (JANTX, JANTXV, and JANS only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein sha ll not be accep tab le.
Screen (see
table E-IV of
Measurement
MIL-PRF-19500)
JANS
JANTX and JANTXV levels
(1) 3c
Thermal impedan ce met hod 3131 of
MIL-STD-750. See 4.3.2.
Thermal impedan ce met hod 3131 of
MIL-STD-750. See 4.3.2.
9
ICES1 and hFE1.
Not applicable.
10
48 hours minimum.
48 hours minimum.
11
ICES1; hFE1; ∆ICES1 = 100 percent of
initial value or 5 nA dc, whichever is
greater; ∆hFE1 = ±15 percent.
ICES1 and hFE1.
12
See 4.3.1.
See 4.3.1.
13
Subgroups 2 and 3 of table I herein;
∆ICES1 = 100 percent of initi al v alue or
5 nA dc, whichever is greater;
∆hFE1 = ±15 percent.
Subgroup 2 of table I herein;
∆ICES1 = 100 percent of initi al v alue or
5 nA dc, whichever is greater;
∆hFE1 = ±15 percent.
(1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANT XV levels do not need to be
repeated in screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as
defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias
conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification
demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data and performance history will
be essential criteria for burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ.
4.3.2 Thermal impedance measurements. The thermal impedance measureme nts shall be p erformed in
accordance w ith meth od 3131 of MIL-STD-750 using the guidelines in that meth od for determining IM, IH, tH, tMD (and
VC where appropriate). Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Gro up A inspe ctio n. Group A inspection shall be con d ucted in accordance w ith MIL-PRF-19500, and
table I herein.
MIL-PRF-19500/391P
14
* 4.4.2 Gro up B inspe ctio n. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-195000 and 4.4.2.1 herein. See 4.4.2.2 herein for
JAN, JANTX, and JANTXV group B testing.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
B4 1037 VCB = 10 V dc, 2,000 cycles, adjust device current, or power, to achieve a minimum
∆TJ of +100°C.
B5 1027 NOTE: If a failure occurs, resubmission shall be at the test conditions of the original
sample. VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum, sample size in accordance with MIL-PRF-19500,
table E-VIa, adjust T A or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achiev e
TJ = +225°C minimum.
B5 2037 Test condition D.
B6 Not applicable.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all cat astrophic
failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a
failure is identified as wafer lot and /or wafer processing related, the entire wafer lot and related devices assembled
from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode
has been implemented and the devices from the wafer lot are screened to eliminate the failure mode.
Step Method Condition
1 1026 Steady-state l ife: 1,000 hours minimum, VCB = 10 V dc, power shal l be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated
PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and
the test time decreased so long as the devices are stressed for a total of 45,000 device
hours minimum, and the actual time of test is at least 340 hours.
2 1048 Blocking life: TA = +150°C, VCB = 80 percent rated voltage, without exceeding max
rated VCEO. 48 hours minimum. n = 45 devices, c = 0.
3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
MIL-PRF-19500/391P
15
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Shall be chosen fr om an inspe ctio n lot that has been sub mitt ed to and passed table I, group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (table E-VIa, subgroups B4 and B5 for JANS, and table E-VIc, group B
for JAN, JANTX and JANTXV) may be pulled prior to the application of final lead finish.
* 4.4.3 Gro up C inspec tion . Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 herein (JANS). See 4.4.3.2 herein for
JAN, JANTX, and JANTXV group C testing.
4.4.3.1 Group C inspection, table E-VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; not applicable for UB devices.
C5 3131 See 1.3. RθJC is applicable for all devices except UB. RθJA is applicable for UB dev ice s.
C6 1026 1,000 hours, VCB = 10 V dc, power and ambient temperature shall be applie d to the dev ice
to achieve TJ = +150°C mini m um, and minimu m power dissipation of 75 percent of max
rated PT (see 1.3 herein); n = 45, c = 0. The sample size may be increased and the test
time decreased as long as the devices are stressed for a total of 45,000 device hours
mi nimum, and th e actual tim e of test is at lea st 340 hour s.
4.4.3.2 Group C inspection, (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; not applicable for UB devices.
C5 3131 See 1.3, RθJC is applicable for all devices except UB. RθJA is applicable f or UB dev ice s.
C6 Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes table I, group A tests herein for conformance inspection. When the final lead finish is solder
or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the
application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package
type shall be considered as complying with the requirements for that subgroup.
4.4.4 Gro up D inspec tion . Conformance inspection for hardness assured JANS and JANTXV types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose, or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
MIL-PRF-19500/391P
16
* 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-IX of MIL-PRF-19500 as specified in table III herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pul se mea sure ments. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Collector-base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt
(rms) acr o ss t he collect or -base terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf
voltmeter across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation
applies:
r'b , Cc(ps) = 2 X Veb (millivolts)
MIL-PRF-19500/391P
17
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
examination
2071
Solderability 3/ 4/
Resistanc e to solvents
3/ 4/ 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles
n = 22 devices, c = 0
Hermetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gr oss leak
Electrical measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hrs or TA =
+300°C at t = 2 hrs, n = 11 wires, c = 0
Decap internal visual
(design verification) 4/
2075
n = 4 devices, c = 0
Subgroup 2
Thermal impedance
3131
See 4.3.2
ZθJX
°C/W
Collector to base cutoff
current
3036
Bias condition D; VCB = 140 V dc
ICBO1
10
µA dc
Emitter to base cutoff
current
3061
Bias condition D; VEB = 7 V dc
IEBO1
10
µA dc
Collector to emitter
breakdown voltage
3011
Bias condition D; IC = 30 mA dc pulsed
(see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C; VCE = 90 V dc
ICES1
10
nA dc
Emitter to base cutoff
current
3061
Bias condition D; VEB = 5 V dc
IEBO2
10
nA dc
Forward current t ransfer
ratio
3076
VCE = 10 V dc; IC = 150 mA dc; pulsed
(see 4.5.1)
hFE1
100
300
Forward current t ransfer
ratio
3076
VCE = 10 V dc; IC = 0.1 mA dc; pulsed
(see 4.5.1)
hFE2
50
300
See footnotes at end of table.
MIL-PRF-19500/391P
18
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward current t ransfer
ratio
3076
VCE = 10 V dc; IC = 10 mA dc; pulsed
(see 4.5.1)
hFE3
90
Forward current t ransfer
ratio
3076
VCE = 10 V dc; IC = 500 mA dc; pulsed
(see 4.5.1)
hFE4
50
300
Forward current t ransfer
ratio
3076
VCE = 10 V dc; IC = 1 A dc; pulsed
(see 4.5.1)
hFE5
15
Collect or to emitter volt age
(saturated)
3071
IC = 1 50 mA dc; IB = 15 mA dc; pulsed
(see 4.5.1)
VCE(sat)1
0.2
V dc
Collect or to emitter volt age
(saturated)
3071
IC = 5 00 mA dc; IB = 50 mA dc; pulsed
(see 4.5.1)
VCE(sat)2
0.5
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 150 mA dc;
IB = 15 mA dc; pulsed (see 4.5.1)
VBE(sat)
1.1
V dc
Subgroup 3
High-temperat ure operat i on
TA = +150°C
Collector to emitter cutoff
current
3041
Bias condition C; VCE = 90 V dc
ICES2
5
µA dc
Low-temperature operation
TA = -55°C
Forward current t ransfer
ratio
3076
VCE = 10 V dc; IC = 150 mA dc;
pulsed (see 4.5.1)
hFE6
40
Subgroup 4
Small-signal short- circuit
forward-current transfer ratio
3206
VCE = 5 V dc; I C = 1 mA dc ,
f = 1 kHz
hfe
80
400
Magnitude of small- signal
short-ci rcuit f orward-current
transf e r ratio
3306
VCE = 10 V dc; IC = 50 mA dc;
f = 20 MHz
|hfe |
5
20
Input capacitance (output
open circuited)
3240
VEB = 0.5 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz
Cibo
60
pF
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0;
100 kHz ≤ f ≤ 1 MHz
Cobo
12
pF
Noise figure
3246
VCE = 10 V dc; IC = 100 µA dc;
Rg = 1 kΩ; power bandwidth = 200 Hz
f = 1 kHz
NF
4
dB
See footnotes at end of table.
MIL-PRF-19500/391P
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TABLE I. Group A inspection - Continued.
Inspecti on 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 4 - Continued
Collector to base time
constant
VCB = 10 V dc; IC = 10 mA dc;
f = 79.8 MHz (see 4.5.2)
r'b,Cc
400
ps
Pulse response
See figure 21
ton + toff
30
ns
Subgroup 5
Safe operati ng area
(continuous dc )
3051
TC = +25°C; t = 10 ms, 1 cycle
(See figure 22)
Tes t 1
VCE = 10 V dc;
2N3019, 2N3019S
IC = 5 00 mA dc
2N3057A, 2N3700,
2N3700UB
IC = 1 80 mA dc
Tes t 2
VCE = 40 V dc;
2N3019, 2N3019S
IC = 130 mA dc
2N3057A, 2N3700,
2N3700UB
IC = 50 mA dc
Tes t 3
VCE = 80 V dc;
2N3019, 2N3019S
IC = 6 0 m A dc
2N3057A, 2N3700,
2N3700UB
IC = 30 mA dc
Electrical measurements
See table I, subgroup 2 herein
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed tes t in subgroup A1, double the sample size of the failed test or sequence of tests. A
failure in table I, group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be
rerun upon submi ssion.
3/ Separate samples may be used.
4/ Not required for JAN S devic es .
5/ Not required for laser marked devices.
MIL-PRF-19500/391P
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TABLE II. Group D inspection.
Inspecti on 1/ 2/ 3/
MIL–STD–750
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 1 4/
Neutron irradiati on
1017
Neutron exposure VCES = 0 V
Collector to base cutoff current
3036
Bias condition D; VCB = 140 V dc
ICBO1
20
µA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 7 V dc
IEBO1
20
µA dc
Collect or to emitter breakdown
voltage
3011
Bias condition D; IC = 30 mA dc
pulsed (see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C; VCE = 90 V dc
ICES1
20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 5 V dc
IEBO2
20
nA dc
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 150 mA dc
[hFE1] 5/
[50]
300
Forward-current transf er rat i o
3076
VCE = 10 V dc; IC = 0.1 mA dc
[hFE2] 5/
[25]
300
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 10 mA dc
[hFE3] 5/
[45]
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 500 mA dc
[hFE4] 5/
[25]
300
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 1 A dc
[hFE5] 5/
[7.5]
Collector-emitter saturation
voltage
3071
IC = 150 mA dc; I B = 15 mA dc
(see 4.5.1)
VCE(sat)1
.23
V dc
Collector-e mitter saturation
voltage
3071
IC = 500 mA dc; I B = 50 mA dc
(see 4.5.1)
VCE(sat)2
.58
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 150 mA dc;
IB = 15 mA dc; pulsed (see 4.5.1)
VBE(sat)
1.27
V dc
See footnotes at end of table.
MIL-PRF-19500/391P
21
TABLE II. Group D inspection - Continued.
Inspecti on 1/ 2/ 3/
MIL-STD-750
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 2
Total dose irradiation
1019
Gamma exposure VCES = 64 V
Collector to base cutoff current
3036
Bias condition D; VCB = 140 V dc
ICBO1
20
µA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 7 V dc
IEBO1
20
µA dc
Collect or to emitter breakdown
voltage
3011
Bias condition D; IC = 30 mA dc
pulsed (see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C; VCE = 90 V dc
ICES1
20
nA dc
Emitter to base cutoff current
3061
Bias condition D; VEB = 5 V dc
IEBO2
20
nA dc
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 150 mA dc
[hFE1] 5/
[50]
300
Forward-current transf er rat i o
3076
VCE = 10 V dc; IC = 0.1 mA dc
[hFE2] 5/
[25]
300
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 10 mA dc
[hFE3] 5/
[45]
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 500 mA dc
[hFE4] 5/
[25]
300
Forward-current transf er ratio
3076
VCE = 10 V dc; IC = 1 A dc
[hFE5] 5/
[7.5]
Collector-e mitter saturation
voltage
3071
I
C
= 1 50 mA dc; I
B
= 15 mA dc;
(see 4.5.1)
V
CE(sat)1
.23
V dc
Collector-e mitter saturation
voltage
3071
I
C
= 5 00 mA dc; I
B
= 50 mA dc;
(see 4.5.1)
V
CE(sat)2
.58
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 150 mA dc;
IB = 15 mA dc; pulsed (see 4.5.1)
VBE(sat)
1.27
V dc
1/ Tests to be performed on all devices receiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
3/ Electrical characteristics apply to the corresponding UB, suffix versions unless otherwise noted.
4/ See 6.2.e herein.
5/ See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre-
and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE]
value can never exceed the pre-radiation minimum hFE that it is based upon.
MIL-PRF-19500/391P
22
TABLE III. Group E inspection (all quality levels) - for qualification and re-qualification only.
Inspection
MIL-STD-750
Qualification
Method
Conditions
Subgroup 1
Temperature c ycling
(air to air)
1051
Test condition C, 500 cycles.
45 devices
c = 0
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 2
Intermittent life
1037
VCB = 10 V dc, 6,000 cycles.
45 devices
c = 0
Electrical measurements
See table I, subgroup 2 herein.
Subgroups 4
15 devices,
c = 0
Thermal resistanc e
3131
RθJSP(IS) can be calculated but shall be measured once
in the same package with a similar die size to confirm
calculati ons (m ay apply to multiple specification sheets).
RθJSP(AM) need be calculated only.
Thermal impedance curves
See table E-IX of MIL-PRF-19500, subgroup 4.
Sample size
N/A
Subgroups 5
Not applicable
* Subgroup 6
ESD
1020
11 devices
c = 0
Subgroup 8
Reverse stability
1033
Condition B.
45 devices
c = 0
MIL-PRF-19500/391P
23
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 8. Derating for 2N3019 (RθJA) PCB (TO-5 and TO-39).
Thermal Resistance Juncti on to Ambient = 195°C/W
MIL-PRF-19500/391P
24
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 9. Derating for 2N3019 (RθJC), base case mount ed (TO-5 and TO-39).
MIL-PRF-19500/391P
25
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 10. Derating for 2N3057A, 2N3700, and 2N3700UB (RθJA) leads .125 inch (3.175 mm).
MIL-PRF-19500/391P
26
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 11. Derating for 2N3057A (RθJc) (TO-46), base case mounted.
MIL-PRF-19500/391P
27
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 12. Derating for 2N3700 (RθJC) (TO-18), base case mounted.
MIL-PRF-19500/391P
28
NOTES:
1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at
≤ TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired
maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3
herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curve chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 13. Derating for 2N3700UB (RθJSP(IS)), infinite sink 3-points.
MIL-PRF-19500/391P
29
RθJA = 195°C/W
FIGURE 14. Thermal impedance graph (RθJA) for 2N3019 (TO-5 and TO-39).
Maximum Thermal Impedance
MIL-PRF-19500/391P
30
RθJC = 30°C/W
FIGURE 15. Thermal impedance graph (RθJC) for 2N3019 (TO-5 and TO-39).
Maximum Thermal Impedance
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Theta (C/W)
MIL-PRF-19500/391P
31
RθJA = 325°C/W
FIGURE 16. Thermal impedance graph (RθJA) 2N3057A (TO-46).
Maximum Thermal Impedance
MIL-PRF-19500/391P
32
RθJC = 80°C/W
FIGURE 17. Thermal impedance graph (RθJc) for 2N3057A (TO-46).
Maximum Thermal Impedance
MIL-PRF-19500/391P
33
RθJA = 325°C/W
FIGURE 18. Thermal impedance graph (RθJA) for 2N3700 (TO-18).
Maximum Thermal Impedance
MIL-PRF-19500/391P
34
RθJC = 150°C/W
FIGURE 19. Thermal impe da nce graph (RθJC) for 2N3700 (TO-18).
Maximum Thermal Impedance
MIL-PRF-19500/391P
35
RθJSP(IS) = 90°C/W
FIGURE 20. Thermal impedance graph (RθJSP(IS)) for 2N3700 (UB).
Maximum Thermal Impedance
MIL-PRF-19500/391P
36
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the
generator sour ce imp edan ce s hall be 50 ohms .
2. Sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 12 pF, rise time ≤ 2.0 ns.
FIGURE 21. Non-saturated switching-time test circuit.
MIL-PRF-19500/391P
37
FIGURE 22. Maximum safe operating graph (10 ms).
MIL-PRF-19500/391P
38
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
* 6.2 Acqui sit ion requ ir e ment s. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
* d. The complete PIN, see1.5.
e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1
testing is desired, it must be speci fied in the cont rac t.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tes ted f or quali fic ation in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online
listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil .
MIL-PRF-19500/391P
39
* 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N3700) will be identified on the QML.
Die ordering information
PIN Manufacturer
34156 43611 52GC4
2N3700 JANHCA2N3700
JANKCA2N3700
JANHCB2N3700
JANKCB2N3700 JANHCC2N3700
JANKCC2N3700
2N3019 JANHCA2N3019
JANKCA2N3019
* 6.5 PIN constr u ctio n ex ample .
* 6.5.1 Encapsulated devices The PINs for encapsulated devices are constructed using the following form.
JANTXV 2N 3019 UB S
JAN certification mark and quality level (see 1.5.1)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
First suffix symbol (see 1.5.4)
Second suffix symbol (see 1.5.4)
* 6.5.2 Un-encapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.
JANHC A 2N 3019
JAN certification mark and quality level (see 1.5.1.2)
Die identifier for unencapsulated devices (see 1.5.6)
First number and first letter symbols (see 1.5.3.1)
Second number symbols (see 1.5.3.2)
MIL-PRF-19500/391P
40
* 6.6 List of PINs. The following is a list of possible PINs available on this specification sheet.
PINs for types
2N3019 (1)
PINs for types
2N3019S (1)
PINs for types
2N3057A (1)
PINs for types
2N3700 (1)
PINs for types
2N3700UB (1)
JAN2N3019 JAN2N3019S JAN2N3057A JAN2N3700 JAN2N3700UB
JANTX2N3019 JANTX2N3019S JANTX2N3057A JANTX2N3700 JANTX2N3700UB
JANTXV2N3019 JANTXV2N3019S JANTXV2N3057A JANTXV2N3700 JANTXV2N3700UB
JANS2N3019 JANS2N3019S JANS2N3057A JANS2N3700 JANS2N3700UB
JANTXVR2N3019 JANTXVR2N3019S JANTXVR2N3057A JANTXVR2N3700 JANTXVR2N3700UB
JANTXVF2N3019 JANTXVF2N3019S JANTXVF2N3057A JANTXVF2N3700 JANTXVF2N3700UB
JANS#2N3019 JANS#2N3019S JANS#2N3057A JANS#2N3700 JANS#2N3700UB
(1) The number sign (#) represents one of eight RHA designators available (M, D, P, L, R, F, G, or H).
* 6.6.1 PINs for unencapsulated devices (die). The following is a list of possible PINs for unencapsulated devices
available on this spe cif ica tio n shee t.
PINs for types 2N3019 (1) PINs for types 2N3700 (1)
JANHCA2N3019 JANHCA2N3700 JANHCB2N3700 JANHCC2N3700
JANKCA2N3019 JANKCA2N3700 JANKCB2N3700 JANKCC2N3700
JANHCA#2N3019 JANHCA#2N3700 JANHCB#2N3700 JANHCC#2N3700
JANKCA#2N3019 JANKCA#2N3700 JANKCB#2N3700 JANKCC#2N3700
(1) The number sign (#) represents one of eight RHA designators available (M, D, P, L, R, F, G, or H).
6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2015-016)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil .