TRANSYS SLECTRONICS BDW94, BDW94A, BDW94B, BDW94C LIMITED PNP SILICON POWER DARLINGTONS TO-220 PACKAGE (TOP VIEW) @ Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C 80 W at 25C Case Temperature C) @ 12 A Continuous Collector Current Minimum heg of 750 at3 V,5 A Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW94 -45 BDW94A -60 Collector-base voltage (Ip = 0) BDW94B Vecso 80 Vv BDW94C -100 BDW94 -45 Collector-emitter voltage (lp = 0) BDWO4A VcEo 60 Vv BDW94B -80 BDW94C -100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo -12 A Continuous base current lB -0.3 A Continuous device dissipation at (or below) 25C case temperature (see Note 1) Prot 80 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Prot 2 WwW Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Operating free-air temperature range Ta -65 to +150 C NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 MW/C. BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT BDW94 -45 Vv Collector-emitter [<= -100 mA Ie =0 (see Note 3) BDW94A -60 Vv (BR)CEO breakdown voltage cm Be BDW94B -80 BDW94C -100 Vop= -40V Ip =0 BDW94 -1 Collector-emitter Vop= -60V Ip =0 BDW94A -1 IcEO mA cut-off current Vop= -80V IR= BDW94B -1 Vop= -80V IR= BDW94C -1 Vop= -45V lp =0 BDW94 -0.1 Vop= -60V lp =0 BDW94A -0.1 Vop= -80V lp =0 BDW94B -0.1 Collector cut-off Vop = -100 V lp =0 BDW94C -0.1 lcBo . mA current Vep= -45V lp =0 Te = 150C BDW94 5 Vop= -60V lp =0 Tc = 150C BDW94A 5 Vop= -80V lp =0 Tc = 150C BDW94B 5 Vop = -100 V lp =0 Tc = 150C BDW94C 5 | Emitter cut-off Vea= -5V I =0 5 mA FBO current EB~ a Vop= -3V Ic= -3A 1000 h Forward current Vec= -3V e=-t0A (see Notes 3 and 4) 100 FE transfer ratio cee a Vop= -3V Ic= -5A 750 20000 Collector-emitter Ip= -20mA Ic= -5A -2 VocE(sat) . (see Notes 3 and 4) Vv saturation voltage Ip = -100 mA Ic = -10A 3 Base-emitter Ip= -20mA Ic= -5A -2.5 VBE(sat) . (see Notes 3 and 4) Vv saturation voltage Ip = -100 mA Ic = -10A -4 Parallel diode le= A Ip =O -2 Vec Vv forward voltage le= -10A Ip =O -4 NOTES: 3. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 1.56 C/W Roya Junction to free air thermal resistance 62.5 C/W BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS - Typical DC Current Gain Neg TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE VS VS COLLECTOR CURRENT COLLECTOR CURRENT 50000 -3-0 * T.= -40C > Tg = -40C To= 25C 3 To= 25C \ T, = 100C D 2.5} T, = 100C \ \ | 10000 > \\ -2-0 \ / w \ / 3 \ V4 g 15 AN J 1000 * 8 co = 05 Vee = 3 V wy t, = 300 ys, duty cycle < 2% t, = 300 ps, duty cycle < 2% > I, = 15/100 | | 100 ote -0-5 -1-0 -10 -20 -0-5 -1-0 -10 -20 |, - Collector Current - A I, - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3-0 T ToT TT T, = -40C To = ao. | T, = 100C 2.5 4 \ \ -2:0 NX NAA \ Ss ast ae -1-0 Vee(sat - Base-Emitter Saturation Voltage - V I, = I./100 t, = 300 us, duty cycle < 2% -9-5 -LLLL | || -0-5 -1-0 -10 -20 |, - Collector Current - A Figure 3. BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 = ' 80 c Ss a \ 5 60 3 \ 5 N o NX & 40 E N\ x N = IN a= 20 \ 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 4. BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 ee eel ph ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) @) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.