ON Semiconductor NPN MJE15028* Complementary Silicon Plastic Power Transistors MJE15030* PNP MJE15029* . . . designed for use as high-frequency drivers in audio amplifiers. * DC Current Gain Specified to 4.0 Amperes * * hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 120 Vdc (Min) -- MJE15028, MJE15029 = 150 Vdc (Min) -- MJE15030, MJE15031 High Current Gain -- Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO-220AB Compact Package MJE15031* *ON Semiconductor Preferred Device 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III * MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJE15028 MJE15029 MJE15030 MJE15031 Unit 120 150 Vdc 120 150 Vdc VCEO VCB Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous -- Peak Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range VEB IC 5.0 Vdc 8.0 16 Adc IB PD 2.0 Adc 50 0.40 Watts W/C PD 2.0 0.016 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case RJC 2.5 C/W Thermal Resistance, Junction to Ambient RJA 62.5 C/W PD, POWER DISSIPATION (WATTS) TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 80 60 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 3 1 Publication Order Number: MJE15028/D MJE15028 MJE15030 MJE15029 MJE15031 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII IIIIII III III IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 120 150 -- -- -- -- 0.1 0.1 -- -- 10 10 -- 10 40 40 40 20 -- -- -- -- Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) VCEO(sus) MJE15028, MJE15029 MJE15030, MJE15031 Collector Cutoff Current (VCE = 120 Vdc, IB = 0) (VCE = 150 Vdc, IB = 0) MJE15028, MJE15029 MJE15030, MJE15031 Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) MJE15028, MJE15029 MJE15030, MJE15031 Vdc ICEO mAdc Adc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Adc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN TO PNP) hFE -- Typ 2 3 Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) -- 0.5 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.0 Vdc fT 30 -- MHz DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) fT = hfe* ftest. http://onsemi.com 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE15028 MJE15030 MJE15029 MJE15031 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 P(pk) ZJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.07 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMP) Figure 2. Thermal Response 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s dc 5ms 1.0 0.1 0.02 2.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25C MJE15028 MJE15029 MJE15030 MJE15031 5.0 10 50 20 120 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area http://onsemi.com 3 MJE15028 MJE15030 MJE15029 MJE15031 1000 8.0 Cib (NPN) Cib (PNP) C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 500 5.0 IC/IB = 10 TC = 25C 3.0 VBE(off) = 9 V 5V 3V 2.0 1.0 0 0 200 100 Cob (PNP) 50 30 Cob (NPN) 20 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 1.5 3.0 fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) hfe , SMALL SIGNAL CURRENT GAIN 100 50 30 20 PNP NPN 10 5.0 0.5 0.7 1.0 3.0 2.0 f, FREQUENCY (MHz) 5.0 100 150 Figure 5. Capacitances Figure 4. Reverse-Bias Switching Safe Operating Area VCE = 10 V IC = 0.5 A TC = 25C 50 5.0 7.0 10 30 VR, REVERSE VOLTAGE (VOLTS) 7.0 10 100 90 (PNP) (NPN) 60 50 20 10 0 0.1 0.2 1.0 0.5 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 Figure 7. Current Gain-Bandwidth Product Figure 6. Small-Signal Current Gain http://onsemi.com 4 10 MJE15028 MJE15030 MJE15029 MJE15031 NPN -- MJE15028 MJE15030 PNP -- MJE15029 MJE15031 1K 1K VCE = 2.0 V 200 150 100 70 50 TJ = 150C TJ = 25C TJ = -55C 30 20 10 0.1 VCE = 2 V 500 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 500 TJ = 150C 200 TJ = 25C 100 TJ = -55C 50 20 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 IC/IB = 10 5.0 10 Figure 8. DC Current Gain NPN PNP TJ = 25C 1.8 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 0.1 0.2 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.4 VCE(sat) = IC/IB = 20 0.2 1.4 VCE(sat) = IC/IB = 20 IC/IB = 10 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 0 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltage 1.0 0.2 3.0 td (NPN, PNP) tr (PNP) 0.1 0.05 0.03 2.0 ts (PNP) 1.0 0.5 tf (PNP) tr (NPN) 0.02 0.01 0.1 VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25C 5.0 t, TIME (s) 0.5 t, TIME (s) 10 VCC = 80 V IC/IB = 10 TJ = 25C 0.2 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0.1 0.1 10 tf (NPN) 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Turn-Off Times Figure 10. Turn-On Times http://onsemi.com 5 5.0 10 MJE15028 MJE15030 MJE15029 MJE15031 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MJE15028 MJE15030 MJE15029 MJE15031 Notes http://onsemi.com 7 MJE15028 MJE15030 MJE15029 MJE15031 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 MJE15028/D