720A
INVERTER GRADE THYRISTORS Hockey Puk Version
ST333C..C SERIES
1
Bulletin I25170 rev. B 04/00
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case style TO-200AB (E-PUK)
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
IT(AV) 720 A
@ Ths 55 °C
IT(RMS) 1435 A
@ Ths 25 °C
ITSM @ 50Hz 11000 A
@ 60Hz 11500 A
I2t@
50Hz 605 KA2s
@ 60Hz 553 KA2s
VDRM/VRRM 400 to 800 V
tq range 10 to 30 µs
TJ- 40 to 125 °C
Parameters ST333C..C Units
Major Ratings and Characteristics
ST333C..C Series
2
Bulletin I25170 rev. B 04/00
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Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
VVmA
04 400 500
08 800 900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 1630 1420 2520 2260 7610 6820
400Hz 1630 1390 2670 2330 4080 3600
1000Hz 1350 1090 2440 2120 2420 2100 A
2500Hz 720 550 1450 1220 1230 1027
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
ITM
180oel
180oel 100µs
ITM ITM
Current Carrying Capability
V
IT(AV) Max. average on-state current 720 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1435 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one half cycle, 11000 t = 10ms No voltage
non-repetitive surge current 11500 A t = 8.3ms reapplied
9250 t = 10ms 100% VRRM
9700 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 605 t = 10ms No voltage Initial TJ = TJ max
553 t = 8.3ms reapplied
428 t = 10ms 100% VRRM
391 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 6050 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST333C..C Units Conditions
On-state Conduction
KA2s
ST333C..C 50
ST333C..C Series
3
Bulletin I25170 rev. B 04/00
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VTM Max. peak on-state voltage 1.96 ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 600 TJ = 25°C, IT > 30A
ILTypical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST333C..C Units Conditions
On-state Conduction
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.93 (I > π x IT(AV)), TJ = TJ max.
V
0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.58 (I > π x IT(AV)), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST333C..C Units Conditions
1000 A/µs
tdTypical delay time 1.1
Min Max
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST333C..C Units Conditions
Blocking
500 V/µs
50 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 60
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST333C..C Units Conditions
WT
J = TJ max., f = 50Hz, d% = 50
20
5
VT
J = TJ max, tp ≤ 5ms
200 mA
3V
TJ = 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated VDRM applied
tqMax. turn-off time 10 30
µs
ST333C..C Series
4
Bulletin I25170 rev. B 04/00
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TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.09 DC operation single side cooled
junction to heatsink 0.04 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.020 DC operation single side cooled
case to heatsink 0.010 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Parameter ST333C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (E-PUK) See Outline Table
K/W
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Single Side Double Side Single Side Double Side
180°0.010 0.011 0.007 0.007
120°0.012 0.012 0.012 0.013
90°0.015 0.015 0.016 0.017 K/W TJ = TJ max.
60°0.022 0.022 0.023 0.023
30°0.036 0.036 0.036 0.036
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Ordering Information Table
ST 33 3 C 08 C H K 1
Device Code
56 89
34 10
7
12
1- Thyristor
2- Essential part number
3- 3 = Fast turn off
4- C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- C = Puk Case TO-200AB (E-PUK)
7- Reapplied dv/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
10 CN DN EN -- --
12 CM DM EM FM * --
15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- FJ HJ
30 -- -- -- -- HH
tq(µs)
*Standard part number.
All other types available only on request.
10
ST333C..C Series
5
Bulletin I25170 rev. B 04/00
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30° 60°
90°
120° 1 80°
A ve ra g e O n -sta te C urre nt (A )
Conduction Period
Maximum Allowable Heatsink Tem perature (°C)
ST333C ..C Series
(Sing le Side C oo led)
R (D C) = 0 .09 K/W
th J-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°120°180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST333C..C Series
(Single Side Cooled)
R (DC) = 0.09 K/W
th J- hs
Outline Table
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
14.1 / 15.1
(0.56 / 0.59)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
25.3 (0.99)
40.5 (1.59) DIA. MAX.
DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
ST333C..C Series
6
Bulletin I25170 rev. B 04/00
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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400 1600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST333C..C Series
(Double Side Cooled )
R (DC) = 0.04 K/W
th J-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30°
60°
90°
120°180°
Average O n-state C urrent (A)
Conduction Angle
M axim um Allowa ble Heatsink Tem perature (°C)
ST333C..C Series
(Double Side Cooled)
R (D C ) = 0.04 K/W
thJ-h s
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0 200 400 600 800 1000 1200 1400 1600
DC
180°
120°
90°
60°
30°RMS Limit
Conduction Period
Maxim um Average On-state Pow er Loss (W )
Average On-state Current (A)
ST333C ..C Serie s
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000
180°
120°
90°
60°
30°RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average O n-state C urren t (A)
ST333C ..C Series
T = 125°C
J
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. C ontrol
Of Conduction May Not Be Maintained.
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST333C..C Series
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At An y Rate d L oad Condition And W ith
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
In it ial T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST333C..C Series
ST333C..C Series
7
Bulletin I25170 rev. B 04/00
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Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
0.511.522.533.544.555.566.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantan eous O n-state Voltage (V)
T = 125°C
J
ST333C..C Series
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
M ax im um Reve rse Rec ove ry C urren t - Irr (A )
R a te O f Fa ll O f Fo rw a rd C ur ren t - d i/d t (A /µ s)
I = 500 A
300 A
200 A
100 A
50 A
TM
ST333C ..C Series
T = 125 °C
J
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
I = 50 0 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Q rr (µC)
TM
ST333C..C Series
T = 125 °C
J
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e P u ls e D ur at io n ( s )
thJ-hs
Tran sient The rm al Im p ed a nce Z (K/W )
ST333C ..C Series
S te a d y St a t e V a lu e
R = 0.09 K/W
( S in gle Sid e C o o le d )
R = 0.04 K/W
(D ouble Side C o oled)
(D C O pe ration)
th J - h s
thJ-h s
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B asew idth (µs)
1000
1500
3000
200
500
5000 ST33 3C ..C Serie s
Sinusoidal pulse
T = 55°C
C
Snubb er circuit
R = 1 0 o hm s
C = 0.47 µF
V = 80 % V
s
s
DDRM
tp
1E1
1E2
1E3
1E4
1E11E21E31E4
50 Hz
400
2500
100
Pulse Basew idth (µs)
Pea k O n-st a te Curren t (A )
1000
1500
3000
200
500
5000
ST33 3C..C Serie s
Sin uso id al p uls e
T = 40°C
C
Snubber circu it
R = 1 0 o hm s
C = 0 .47 µF
V = 80% V
s
s
DDRM
tp
1E4
ST333C..C Series
8
Bulletin I25170 rev. B 04/00
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pulse B asew id th (µs)
Pea k O n-sta te Curre nt (A )
ST33 3C..C Serie s
Trapezoidal pulse
T = 40°C
d i/dt = 100A/µs
Snubber circuit
R = 10 ohms
C = 0 .47 µ F
V = 80% V
s
s
DDRM
C
5000
tp
1E4
1E2
1E3
1E4
1E11E21E31E4
50 Hz
400
2500
100
1000
1500
2000
200
500
Pulse Ba se w idth (µs)
Peak On-state Current (A)
ST333C..C Series
Tra p ezo id a l p uls e
T = 4 0°C
di/d t = 50A/µs
3000
Snubber circuit
R = 1 0 o hm s
C = 0.47 µF
V = 80 % V
s
s
DDRM
C
tp
5000
1E4 1E11E21E31E4
50 Hz
400 100
Pulse Ba sew idth (µs)
1000
1500
2000
200
500
2500
Snubber circuit
R = 1 0 o hm s
C = 0.4 7 µF
V = 80% V
DRM
s
s
D
ST33 3C..C Series
Tr a p ezo i d a l p uls e
T = 55 °C
di/dt = 100A/µs
C
3000
5000 tp
1E1
1E1 1E 2 1 E3 1E4
50 Hz
400 100
Pulse Basew idth (µs)
1000
1500
2000
200
500
ST333C..C Series
Tr a p ezo id al p uls e
T = 55 °C
di/dt = 100A /µs
C
2500
Snubber circuit
R = 1 0 o hm s
C = 0.4 7 µF
V = 80% V
s
s
DDR M
tp
3000
5000
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse B ase w idth (µs)
20 joules per p ulse
2
1
0.5
0.3
0.2
10
5
Pea k O n-state C u rren t (A )
3
ST33 3C ..C Series
Sinuso i da l puls e
tp
1E4 1E1 1E2 1E3 1E4
Pulse Ba sew id th (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
10
3
ST333C Series
Rec ta ng ula r puls e
di/dt = 50A/µs
0.4
tp 5
1E1
ST333C..C Series
9
Bulletin I25170 rev. B 04/00
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Fig. 17 - Gate Characteristics
0.1
1
10
100
0.0 01 0.0 1 0 .1 1 1 0 1 00
VGD
IG D
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=- 40 °C
(1) (2)
Instantaneous G ate C urrent (A)
Instantan eous G ate Vo lta ge (V)
Rectangular gate pulse
a ) R e c o m m e n d e d lo a d lin e fo r
b ) R e c o m m e n d e d lo a d lin e f o r
<=30% rate d di/dt : 10V, 10ohms
rated di/dt : 20V , 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 1 0W , tp = 20 m s
(2) PGM = 2 0W , tp = 10 m s
(3) PGM = 4 0W , tp = 5m s
(4) PGM = 6 0W, tp = 3.3ms
(3 )
Device: ST333C ..C Series Frequen cy Limited by PG(AV )
(4)
