2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol Ratings Unit V V DS 500 A ID 16 A ID(puls] 64 V VGS 30 A IAR *2 16 mJ EAS *1 212.2 kV/s dVDS/dt *4 20 dV/dt *3 5 kV/s PD Ta=25C 1.67 W Tc=25C 225 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C *1 L=1.52mH, Vcc=50V,Tch=25C, See to Avalanche Energy Graph *2 Tch < =150C *3 IF < *4 VDS < = BVDSS, Tch < = 150C = -ID, -di/dt=50A/s, Vcc < = 500V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=30V VDS=0V ID=7A VGS=10V Typ. 500 3.0 5.0 25 250 100 0.46 Tch=25C Tch=125C ID=7A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=7A VGS=10V 7 RGS=10 V CC =250V ID=14A VGS=10V L=2.27mH Tch=25C IF=14A VGS=0V Tch=25C IF=14A VGS=0V -di/dt=100A/s Tch=25C Max. 10 0.35 14 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 33 50 12.5 19 10.5 16 16 1.00 0.65 6.0 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.556 75.0 Units C/W C/W 1 2SK3581-01L,S,SJ FUJI POWER MOSFET Characteristics 250 Allowable Power Dissipation PD=f(Tc) 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V IAS=7A 450 400 200 350 EAS [mJ] PD [W] IAS=10A 300 150 100 250 200 IAS=16A 150 100 50 50 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 30 20V 28 10V 26 8V 7.5V 24 10 22 20 ID[A] ID [A] 18 16 7.0V 14 1 12 10 8 VGS=6.5V 6 4 0.1 2 0 0 2 4 6 8 10 12 14 16 18 20 22 0 1 2 3 4 VDS [V] 5 6 7 8 9 10 VGS[V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 1.0 100 0.9 VGS=6.5V 7.5V 7.0V 0.8 0.7 gfs [S] RDS(on) [ ] 10 0.6 8V 10V 20V 0.5 0.4 1 0.3 0.2 0.1 0.1 0.0 0.1 1 10 0 5 10 15 20 25 30 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3581-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V 1.2 7.0 1.1 6.5 1.0 6.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 5.5 0.9 max. 5.0 VGS(th) [V] RDS(on) [ ] 0.8 0.7 max. 0.6 0.5 typ. 0.4 4.5 4.0 3.5 min. 3.0 2.5 2.0 0.3 1.5 0.2 1.0 0.1 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 Tch [ C] 50 75 100 125 150 Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=14A, Tch=25C 24 25 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 22 20 Vcc= 100V 18 Ciss 1n 250V 16 400V C [F] VGS [V] 14 12 100p Coss 10 8 10p 6 Crss 4 2 1p 0 0 10 20 30 40 50 60 70 80 10 -1 10 0 1 10 2 10 3 VDS [V] Qg [nC] 100 10 Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C t=f(ID):Vcc=300V, VGS=10V, RG=10 10 2 tr td(off) t [ns] IF [A] 10 td(on) 10 tf 1 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 2.00 VSD [V] 10 0 10 1 ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3581-01L,S,SJ FUJI POWER MOSFET Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=50V 10 2 10 1 10 0 Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4