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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQI4N90 N-Channel QFET(R) MOSFET 900 V, 4.2 A, 3.3 Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V, ID = 2.1 A * Low Gate Charge (Typ. 24 nC) * Low Crss (Typ. 9.5 pF) * 100% Avalanche Tested D G DS G I2-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQI4N90TU 900 Unit V - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, Tstg TL - Pulsed (Note 1) 4.2 A 2.65 A 16.8 A 30 V (Note 2) 570 mJ Avalanche Current (Note 1) 4.2 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 14 4.0 3.13 mJ V W 140 1.12 -55 to +150 W W/C C 300 C (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds. Thermal Characteristics Symbol RJC RJA Parameter FQI4N90TU Thermal Resistance, Junction to Case, Max. 0.89 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 1 Unit oC/W 40 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET November 2013 Part Number Electrical Characteristics Symbol Package I2-PAK Top Mark FQI4N90 FQI4N90TU Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 900 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.9 VDS = 900 V, VGS = 0 V -- -- 10 A VDS = 720 V, TC = 125C -- -- 100 A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.1 A -- 2.7 3.3 gFS Forward Transconductance VDS = 50 V, ID = 2.1 A -- 3.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 860 1100 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 90 120 pF -- 9.5 12.5 pF -- 25 60 ns -- 70 150 ns -- 45 100 ns -- 40 90 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 4.2 A, RG = 25 (Note 4) VDS = 720 V, ID = 4.2 A, VGS = 10 V (Note 4) -- 24 30 nC -- 5.8 -- nC -- 11.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.2 A ISM -- -- 16.8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.2 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 440 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.2 A, dIF / dt = 100 A/s -- 3.3 -- C Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 61 mH, IAS = 4.2 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 4.2 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 2 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information ID, Drain Current [A] Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] 1 10 0 10 -1 150 0 10 25 -55 10 Notes : 1. VDS = 50V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 0 10 10 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 8 6 10 VGS , Gate-Source Voltage [V] Figure 2. Transfer Characteristics 10 1 IDR , Reverse Drain Current [A] RDS(on) [ ], Drain-Source On-Resistance 10 8 VGS = 10V VGS = 20V 6 0 10 4 2 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0 0 3 9 6 -1 10 12 ID , Drain Current [A] 0.2 1.2 1.4 Coss 600 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 180V 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 1.0 12 Ciss 900 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1200 0.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1500 0.4 300 VDS = 450V VDS = 720V 8 6 4 2 Note : ID = 4.2 A 0 -1 10 0 0 10 1 10 5 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 0 Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 2.1 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 5 2 10 Operation in This Area is Limited by R DS(on) 4 1 100 s 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms DC 0 10 -1 10 Notes : 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 ZJC(t), Thermal Response [oC/W] Figure 9. Maximum Safe Operating Area 10 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 N o te s : 1 . Z J C ( t) = 0 .8 9 / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 10 t1 s i n g le e p ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 4 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET Typical Characteristics 200nF 12V FQI4N90 -- N-Channel QFET(R) MOSFET VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 5 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 6 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003 (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2010 Fairchild Semiconductor Corporation FQI4N90 Rev. C1 8 www.fairchildsemi.com FQI4N90 -- N-Channel QFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) SM BitSiCTM Global Power Resource PowerTrench GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) Quiet SeriesTM GTOTM CTLTM TINYOPTOTM RapidConfigureTM IntelliMAXTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM EcoSPARK(R) Saving our world, 1mW/W/kW at a timeTM and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM SuperSOTTM-3 mWSaver FACT(R) UniFETTM SuperSOTTM-6 OptoHiTTM FAST(R) VCXTM SuperSOTTM-8 OPTOLOGIC(R) FastvCoreTM VisualMaxTM OPTOPLANAR(R) SupreMOS(R) FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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