SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo, 55 625 J626 J629 N334 cCDQ10003 JAN2N431 cpa10005 NSO69 4030 D4C29 cDQ10009 $T1243 4JD4A2 4JD4A5 ST25C 2N930/TPT TIS22 TMT840 2N841/TPT TMT843 2N3128 TIS24 2N1199At 2N1893/5 1 28C182 2SC268A 28C475 cs . CS2641* CS2644% S29010* $29013* NS6112 DISS. @25C 150m 150m 150m 150m 150m 180m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m 150m fab 30M8A 30M5A 30M5 40M 40M5 60M5A 6OMSA 75MS8A 80.MA 90.M 90.M& 100M8 100M8 100M8A 100M5A 100M8A 100M8A 100M D.A.T.A. IN ORDER OF (1) MAX COLLECTOR DISSIPATION Cob |STRUC|Y200 |E 0 TURE | s/a JAD TO200/D E uld u TOS u TOSs1 u23a u23a u23 uS6b DPLZ{L2r * DPL@|L2r * L2r * DPL@|L2r X16 SYMBOLS AND CODES 55 EXPLAINED IN INTERPRETER