12-05-2002
MS2472
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS2472 is a hermetically sealed, gold metallized, silicon
NPN power transistor. The MS2472 is designed for applications
requiring high peak power and low duty cycles such as IFF and
DME. The MS2472 is internal input/output matched resulting in
improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
mbol Paramete
alue Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 40 A
PDISS Power Dissi
ation 1350 W
TJ Junction Temperature 200 ºC
TSTG Storage Temperature -65 to +150 ºC
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.06 °
°°
°C/W
Features
FeaturesFeatures
Features
• 1025 - 1150 MHz
• POUT = 550 WATTS
• GP = 5.6 dB MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT/OUTPUT MATCHED
• COMMON BASE CONFIGURATION