TCMT110. Series
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Rev. 3.1, 25-Jun-2018 1Document Number: 83510
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Optocoupler, Phototransistor Output, Single Channel,
Half Pitch Mini-Flat Package
DESCRIPTION
The TCMT110. series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4 pin package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
FEATURES
• Low profile package (half pitch)
• AC isolation test voltage 3750 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) selected into groups
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Programmable logic controllers
•Modems
• Answering machines
• General applications
AGENCY APPROVALS
• UL1577, file no. E76222, double protection
• cUL component acceptance service no. 5A, double
protection
• DIN EN 60747-5-5 (VDE 0884-5)
• FIMKO: FI EN 60950-1:2006
• BSI: BS EN60065:2002
BS EN60950-1:2006
• CQC GB 8898-2011, GB 4943.1-2011 (suitable for
installation altitude below 2000 m)
Notes
• Available only on tape and reel
(1) Product is rotated 180° in tape and reel cavity
AC
12
CE
43
22628-1
ORDERING INFORMATION
TCMT110#
PART NUMBER
AGENCY
CERTIFIED/
PACKAGE
CTR (%)
5 mA 10 mA 5 mA
UL, cUL, FIMKO,
BSI, VDE 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
SSOP-4 TCMT1100 TCMT1101 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107,
TCMT1107T3
(1)
TCMT1108 TCMT1109
SSOP-4
7.21 mm
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 2Document Number: 83510
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1) Refer to reflow profile for soldering conditions for surface mounted devices. Also refer to “Assembly Instructions”
(www.vishay.com/doc?80054)
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Forward current IF60 mA
Forward surge current tp ≤ 10 μs IFSM 1.5 A
Power dissipation Pdiss 100 mW
Junction temperature Tj125 °C
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj125 °C
COUPLER
AC isolation test voltage (RMS) Related to standard climate 23/50
DIN 50014 VISO 3750 VRMS
Total power dissipation Ptot 250 mW
Operating ambient temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -40 to +125 °C
Soldering temperature (1) Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF- 1.35 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj-8 pF
OUTPUT
Collector emitter voltage IC = 100 μA VCEO 70 - - V
Emitter collector voltage IE = 100 μA VECO 7--V
Collector dark current VCE = 20 V, IF = 0 A ICEO - - 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat --0.3V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100 Ωfc- 100 - kHz
Coupling capacitance f = 1 MHz Ck-0.3- pF
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 3Document Number: 83510
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Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 2 - Test Circuit, Saturated Operation
Fig. 3 - Switching Times
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IF
VCE = 5 V, IF = 5 mA TCMT1100 CTR 50 - 600 %
VCE = 5 V, IF = 10 mA
TCMT1101 CTR 40 - 80 %
TCMT1102 CTR 63 - 125 %
TCMT1103 CTR 100 - 200 %
TCMT1104 CTR 160 - 320 %
VCE = 5 V, IF = 5 mA
TCMT1105 CTR 50 - 150 %
TCMT1106 CTR 100 - 300 %
TCMT1107 CTR 80 - 160 %
TCMT1108 CTR 130 - 260 %
TCMT1109 CTR 200 - 400 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) td-4.0- μs
Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) tr-5.5- μs
Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) tf-7.0- μs
Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) ts-1.5- μs
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) ton -9.5- μs
Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1) toff -8.5- μs
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2) ton -3.0- μs
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2) toff -20.0- μs
Channel I
Channel II
95 10804
R
G
= 50 Ω
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
F
0
50 Ω100 Ω
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
Channel I
Channel II
95 10843
RG= 50 Ω
tp
tp= 50 µs
T= 0.01
+ 5 V
IC
IF
0
50 Ω1 kΩ
IF= 10 mA
Oscilloscope
RL
≥
CL20 pF
1 MΩ
≤
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf) Turn-off time
96 11698
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 4Document Number: 83510
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Forward Voltage vs. Forward Current
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Climatic classification According to IEC 68 part 1 40 / 110 / 21
Pollution degree According to DIN VDE 0109 2
Comparative tracking index Insulation group IIIa CTI 175
Maximum rated withstanding isolation voltage According to UL1577, t = 1 min VISO 3750 VRMS
Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 6000 Vpeak
Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 707 Vpeak
Isolation resistance
Tamb = 25 °C, VIO = 500 V
RIO
≥ 1012
ΩTamb = 100 °C, VIO = 500 V ≥ 1011
Tamb = TS, VIO = 500 V ≥ 109
Output safety power PSO 350 mW
Input safety current ISI 150 mA
Input safety temperature TS175 °C
Creepage distance ≥ 5mm
Clearance distance ≥ 5mm
Insulation thickness DTI ≥ 0.4 mm
Input to output test voltage, method B VIORM x 1.875 = VPR, 100 % production test
with tM = 1 s, partial discharge < 5 pC VPR 1326 Vpeak
Input to output test voltage, method A VIORM x 1.6 = VPR, 100 % sample test
with tM = 10 s, partial discharge < 5 pC VPR 1132 Vpeak
0
50
100
150
200
250
300
04080120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
0.6 0.8 1.0 1.2 1.4 1.6
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = -55 °C
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 5Document Number: 83510
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 6 - Collector Current vs. Collector Emitter Voltage
Fig. 7 - Leakage Current vs. Ambient Temperature
Fig. 8 - Collector Current vs. Collector Emitter Voltage
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
0
5
10
15
20
25
30
35
40
45
50
55
0 1 2 3 4 5 6 7 8 9 10
IC - Collector Current (mA)
VCE - Collector Emitter Voltage (non-sat) (V)
IF = 30 mA
IF = 35 mA
IF = 1 mA
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
IF = 25 mA
I
CE0
- Leakage Current (nA)
T
amb
- Ambient Temperature (°C)
IF= 0 mA
VCE = 40 V
VCE = 24 V
VCE = 12 V
-60 -40 -20 0 20 40 60 80 120100
0.01
0.1
1
10
100
1000
10 000
0
2
4
6
8
10
12
14
00.10.20.30.4
IC- Collector Current (mA)
VCE - Collector Emitter Voltage (V)
IF= 1 mA
IF= 10 mA
IF= 5 mA
IF= 2 mA
0
0.2
0.4
0.6
0.8
1.0
1.2
NCTR - Normalized CTR (non-saturated)
Tamb - Ambient Temperature (°C)
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
IF = 5 mA
-60 -40 -20 0 20 40 60 80 120100
0
0.2
0.4
0.6
0.8
1.0
1.2
NCTR - Normalized CTR (sat)
Tamb - Ambient Temperature (°C)
IF= 5 mA
Normalized to CTR value:
IF= 5 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20 0 20 40 60 80 120100
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
VCEsat - Collector Emitter Voltage (V)
Tamb - Ambient Temperature (°C)
Ic = 1 mA
Ic = 2 mA
Ic = 5 mA
IF = 10 mA
-60 -40 -20 0 20 40 60 80 120100
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 6Document Number: 83510
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
Fig. 13 - Normalized CTR (saturated) vs. Forward Current
Fig. 14 - FCTR vs. Phase Angle
Fig. 15 - FCTR vs. Collector Current
Fig. 16 - Switching Time vs. Load Resistance
-160
-140
-120
-100
-80
-60
-40
-20
0
1 10 100 1000
Phase Angle (deg)
f - Frequency (kHz)
VCE = 5 V
RL = 100 Ω
RL = 1000 Ω
1
10
100
1000
0.1 1 10 100
FCTR (kHz)
IC (mA)
VCC = 5 V
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 7Document Number: 83510
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PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING (example)
TAPE AND REEL PACKAGING in millimeters
Fig. 17
7.00 ± 0.30
4.40 typ.
0.2 ± 0.05
0.60 + 0.20
- 0.30
Lead coplanarity
0.1 max.
0.9
5.00
1.27
7.60
Possible footprint
Pin One I.D.
12
43
2.60 ± 0.20
2.00 ± 0.100.10 ± 0.10
0.4 ± 0.1
1.27 nom.
2.85 max.
MT1100
V YWW 68
7.5 ± 0.1
1.75 ± 0.1
16 ± 0.3
8 ± 0.1
2.95 ± 0.1 1.6 ± 0.1
Pin 1
2 ± 0.1 4 ± 0.1 1.55 ± 0.05
7.4 ± 0.1
0.3 ± 0.05
7.4 ± 0.1
5°
4.4
2.6 ± 0.1
2.2 ± 0.1
TCMT110. Series
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Rev. 3.1, 25-Jun-2018 8Document Number: 83510
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SOLDER PROFILES
Fig. 18 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020 for SMD Devices
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
240 °C
Max. 260 °C
217 °C
255 °C
19841
10
100
1000
10000
0
100
200
300
0 50 100 150 200 300
Axis Title
1st line
2nd line
2nd line
Temperature (°C)
Time (s)
50
150
250
250
245 °C
Max. 100 s
Max. 30 s
Max. 120 s
Max. ramp down 6 °C/s
Max. ramp up 3 °C/s
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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